Untitled
Abstract: No abstract text available
Text: SXB-2089Z SXB-2089Z 5MHz to 2500MHz Medium Power InGaP/GaAs HBT Amplifier 5MHz to 2500MHz MEDIUM POWER InGaP/GaAs HBT AMPLIFIER RFMD Green, RoHS Compliant, Pb-Free Package: SOT-89 Product Description Features RFMD’s SXB-2089Z amplifier is a high linearity InGaP/GaAs Heterojunction Bipolar Transistor HBT MMIC housed in a low-cost, surface-mountable plastic package. These amplifiers are specially designed for use as
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SXB-2089Z
2500MHz
2500MHz
OT-89
SXB-2089Z
PSF-S01-1mm
EEF-101407
ECB-102925-B
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MCH185A221JK
Abstract: MCH185A390JK ML200C SGA-8543Z PSF-S01 AN079 SOT343 C5 Getek Sirenza AN-21
Text: Design Application Note - AN-079 SGA-8543Z Amplifier Application Circuits Design Considerations and Trade-offs -Biasing Techniques Abstract Sirenza Microdevices’ SGA-8543Z is a high performance SiGe amplifier designed for operation from 50 MHz to 3.5 GHz. This application note illustrates application circuits
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AN-079
SGA-8543Z
dev2450
2440MHz
EAN-104851
MCH185A221JK
MCH185A390JK
ML200C
PSF-S01
AN079
SOT343 C5
Getek
Sirenza AN-21
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MCH185C332K
Abstract: MCH155F103Z mch184cn224k MCH153F104Z
Text: Multi Layer Ceramic Chip Capacitors MCH15 Series 1005(0402 Size), MCH18 Series (1608(0603) Size) Barrier layer and end terminations to improve solderability. These capacitors are suitable for flow and reflow soldering and can be used in various applications.
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MCH15
MCH18
MCH185C332K
MCH155F103Z
mch184cn224k
MCH153F104Z
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MCH315A180J
Abstract: MCH215A221J MCH315A100D MCH185A220J MCH215A680J MCH155A270J MCH215A220J MCH185A100D MCH185A2R2C MCH215A471J
Text: 1/2 C L A S S I C 0 G M U LT I L AY E R C E R A M I C C A PA C I T O R S MCH SERIES • CLASS I, TEMPERATURE COMPENSATED: C0G • CLASS II, HIGH DIELECTRIC CONSTANT: X7R & Y5V. Z5U ALSO AVAILABLE MCH SERIES SPECIFICATIONS Parameter Temperature range Temp. coefficients
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30ppm/
with61J
560pF
MCH315A681J
680pF
MCH315A821J
820pF
MCH315A102J
MCH315A122J
MCH315A152J
MCH315A180J
MCH215A221J
MCH315A100D
MCH185A220J
MCH215A680J
MCH155A270J
MCH215A220J
MCH185A100D
MCH185A2R2C
MCH215A471J
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Untitled
Abstract: No abstract text available
Text: SZM-2066Z SZM-2066Z 2.4GHz to 2.7GHz 2W Power Amplifier 2.4GHz to 2.7GHz 2W POWER AMPLIFIER Package: QFN, 6mmx6mm Product Description Features RFMD’s SZM-2066Z is a high linearity class AB Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip
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SZM-2066Z
SZM-2066Z
11b/g
LL1608FH4N7J
DS110620
LL1608FH10J
SZM2066ZSQ
SZM2066ZSR
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dk39
Abstract: SZM-2166 szm2166 SZM2166ZSR 600S100JW250 12NXJBB 600S100 42 dbm 2.4GHz amplifier schematic
Text: SZM-2166Z SZM-2166Z 2.3GHz to 2.7GHz 2W Power Amplifier 2.3GHz to 2.7GHz 2W POWER AMPLIFIER Package: QFN, 6mmx6mm Product Description Features RFMD’s SZM-2166Z is a high linearity class AB Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip module package. This HBT
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SZM-2166Z
SZM-2166Z
bands21
DS110620
SZM2166ZSQ
SZM2166ZSR
SZM2166Z
SZM2166ZPCK-EVB1
dk39
SZM-2166
szm2166
600S100JW250
12NXJBB
600S100
42 dbm 2.4GHz amplifier schematic
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Untitled
Abstract: No abstract text available
Text: RFPA2226 2.2GHz to 2.7GHz 2W InGaP AMPLIFIER RFPA2226 Proposed 2.2GHz TO 2.7GHz 2W InGaP AMPLIFIER Package: QFN Features P1dB =33.5dBm at 5V, 2.4GHz 802.11g 54Mb/s Class AB Performance POUT =26dBm at 2.5% EVM, VCC 5V POUT =27dBm at 2.5% EVM,
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RFPA2226
RFPA2226
54Mb/s
26dBm
27dBm
MCH185A5R6DK
MCH182CN104K
600S1R6JW250
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30 micro farad capacitor 6000 volt
Abstract: HBT transistor j1 05075 ECG014 LL1608-F33NK MCH185A180JK MCH185A560JK 7953 scr 50kA ic 76660
Text: PRELIMINARY DATA SHEET ECG014 BROADBAND HIGH OIP3 AMPLIFIER 50 - 2000 MHz Features Applications n n n n n n n 50 to 2000 MHz 42 dBm Typical OIP3 at 1900 MHz Highly Reliable InGaP HBT 20.5 dB Typical Gain at 900 MHz 24.0 dBm Typical P1dB at 1900 MHz Excellent Stability
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ECG014
OT-89
ECG014
OT-89
SS-000122-000
30 micro farad capacitor 6000 volt
HBT transistor
j1 05075
LL1608-F33NK
MCH185A180JK
MCH185A560JK
7953
scr 50kA
ic 76660
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Untitled
Abstract: No abstract text available
Text: SZP-2026Z SZP-2026Z 2.2GHz to 2.7GHz 2W InGaP AMPLIFIER Package: SOF-26 Product Description Features RFMD’s SZP-2026Z is a high linearity single stage class AB Heterojunction Bipolar P1dB =33.5dBm at 5V, 2.4GHz 802.11g 54Mb/s Class AB Performance
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SZP-2026Z
SOF-26
SZP-2026Z
54Mb/s
26dBm
27dBm
SZP-2026Zâ
DS110620
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mch185cn153k
Abstract: MCH184FN105Z MCH185A101J MCH155A221J MCH155F103Z MCH18 MCH185A150J MCH153F104Z MCH185A470J f103z
Text: Multi Layer Ceramic Chip Capacitors MCH15 Series 1005(0402 Size), MCH18 Series (1608(0603) Size) Barrier layer and end terminations to improve solderability. These capacitors are suitable for flow and reflow soldering and can be used in various applications.
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MCH15
MCH18
12please
4316B
mch185cn153k
MCH184FN105Z
MCH185A101J
MCH155A221J
MCH155F103Z
MCH185A150J
MCH153F104Z
MCH185A470J
f103z
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cdi schematics pcb
Abstract: datasheet ic 7822 eic 4191 1 micro farad capacitor 50 VOLT cdi schematic cdi schematics ECG014 LL1005-FH1N0S LL1608-F15NK LL1608-F33NK
Text: DATA SHEET ECG014 BROADBAND HIGH OIP3 AMPLIFIER 50 - 2000 MHz Features Applications 50 to 2000 MHz 41 dBm Typical OIP3 at 1900 MHz Highly Reliable InGaP HBT 20.5 dB Typical Gain at 900 MHz 23.5 dBm Typical P1dB at 1900 MHz Excellent Stability
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ECG014
OT-89
ECG014
OT-89
AP-000192-000
AP-000194-000
AP-000487-000
AP-000515-000
AP-000516-000
cdi schematics pcb
datasheet ic 7822
eic 4191
1 micro farad capacitor 50 VOLT
cdi schematic
cdi schematics
LL1005-FH1N0S
LL1608-F15NK
LL1608-F33NK
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600S100JW250
Abstract: cap 10pF 50V 10 0603 X7R 600S2R0JW250 MCH18
Text: RFPA2226 RFPA2226 2.2GHz to 2.7GHz 2W InGaP AMPLIFIER 2.2GHz TO 2.7GHz 2W InGaP AMPLIFIER Package: QFN Features P1dB =33.5dBm at 5V, 2.4GHz 802.11g 54Mb/s Class AB Performance POUT =26dBm at 2.5% EVM, VCC 5V POUT =27dBm at 2.5% EVM, VCC 6V
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RFPA2226
RFPA2226
54Mb/s
26dBm
27dBm
MCH185A5R6DK
MCH182CN104K
600S1R6JW250
600S100JW250
cap 10pF 50V 10 0603 X7R
600S2R0JW250
MCH18
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SGA8343Z
Abstract: MCR03*J102 SGA8343ZSR SGA-8343Z EVB1 1608-FS3N9S lot code RFMD MCH185A150J MCR03J5R1 toko 10k series
Text: SGA8343Z SGA8343ZLow Noise, High Gain SiGe HBT LOW NOISE, HIGH GAIN SiGe HBT Package: SOT-343 Product Description Features RFMD’s SGA8343Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from DC to
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SGA8343Z
SGA8343ZLow
OT-343
SGA8343Z
DS100909
SGA8343Z-EVB4
1575MHz
MCR03*J102
SGA8343ZSR
SGA-8343Z
EVB1
1608-FS3N9S
lot code RFMD
MCH185A150J
MCR03J5R1
toko 10k series
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Untitled
Abstract: No abstract text available
Text: SZM-2166Z SZM-2166Z 2.3GHz to 2.7GHz 2W Power Amplifier 2.3GHz to 2.7GHz 2W POWER AMPLIFIER Package: QFN, 6mmx6mm Product Description Features RFMD’s SZM-2166Z is a high linearity class AB Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip module package. This HBT
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SZM-2166Z
SZM-2166Z
DS110620
SZM2166ZSQ
SZM2166ZSR
SZM2166ZPCK-EVB1
SZM2166ZPCK-EVB2
SZM2166ZPCK-EVB3
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TAJB105KLRH
Abstract: No abstract text available
Text: Preliminary SXB-2089Z Product Description Sirenza Microdevices’ SXB-2089Z amplifier is a high linearity InGaP/ GaAs Heterojunction Bipolar Transistor HBT MMIC housed in a low-cost, surface-mountable plastic package. 5-2500 MHz Medium Power InGaP/GaAs HBT Amplifier
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SXB-2089Z
SXB-2089Z
43dBm
24dBm
AN075
EDS-104625
TAJB105KLRH
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CL10B104KONC
Abstract: LL1608-FS18NJ MCR03*J102 SGA-8343 MCH185A100D MCR03*J102 resistor sige an-061 GETEK Z6 82 5.1 amplifier circuits
Text: Design Application Note - AN-044 SGA-8343 Amplifier Application Circuits Abstract Sirenza Microdevices’ SGA-8343 is a high performance SiGe amplifier designed for operation from DC to 6 GHz. This application note illustrates several application circuits for key frequency bands in the
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AN-044
SGA-8343
EAN-101847
CL10B104KONC
LL1608-FS18NJ
MCR03*J102
MCH185A100D
MCR03*J102 resistor
sige an-061
GETEK
Z6 82
5.1 amplifier circuits
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transistor 2.4GHz amplifier schematic wifi
Abstract: 600S100JW250 dk39 MCH182CN104K SZM-2166Z SZM - 238 wifi 2.4 ghz pcb layout
Text: SZM-2166Z SZM-2166Z 2.3GHz to 2.7GHz 2W Power Amplifier 2.3GHz to 2.7GHz 2W POWER AMPLIFIER Package: QFN, 6mmx6mm Product Description Features RFMD’s SZM-2166Z is a high linearity class AB Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip module package. This HBT
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SZM-2166Z
SZM-2166Z
applicaZM-2166Z
SZM-2166Z-EVB1
SZM-2166Z-EVB2
SZM-2166Z-EVB3
EDS-105840
transistor 2.4GHz amplifier schematic wifi
600S100JW250
dk39
MCH182CN104K
SZM - 238
wifi 2.4 ghz pcb layout
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SZM-2166Z
Abstract: dk39 LL1608-FH4N7J SZM2166 LL1608FH4N7J transistor 2.4GHz amplifier schematic wifi F24G 43S21
Text: SZM-2166Z SZM-2166Z 2.3GHz to 2.7GHz 2W Power Amplifier 2.3GHz to 2.7GHz 2W POWER AMPLIFIER Package: QFN, 6mmx6mm Product Description Features RFMD’s SZM-2166Z is a high linearity class AB Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip module package. This HBT
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SZM-2166Z
SZM-2166Z
SZM2166Z
SZM2166ZPCK-EVB1
SZM2166ZPCK-EVB2
SZM2166ZPCK-EVB3
DS100622
dk39
LL1608-FH4N7J
SZM2166
LL1608FH4N7J
transistor 2.4GHz amplifier schematic wifi
F24G
43S21
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Cap 0603 X7R
Abstract: SOF-26 SZP-2026Z recommended land pattern for 0402 cap
Text: SZP-2026Z SZP-2026Z 2.2GHz to 2.7GHz 2W InGaP AMPLIFIER Package: SOF-26 Product Description Features RFMD’s SZP-2026Z is a high linearity single stage class AB Heterojunction Bipolar Transistor HBT amplifier housed in a proprietary surface-mountable plastic encapsulated package. This HBT amplifier is made with InGaP on GaAs device technology
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SZP-2026Z
SOF-26
SZP-2026Z
o026Z"
SZP2026Z
SZP2026Z-EVB1
SZP2026Z-EVB2
DS091202
Cap 0603 X7R
SOF-26
recommended land pattern for 0402 cap
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MCH185A050c
Abstract: MCH155A240J MCH185A101J MCH185CN153 MCH155A121J MCH155C471K MCH185A220J MCH185C472K MCH155A100D MCH185A330J
Text: 積層セラミックチップコンデンサ／Multi Layer Ceramic Chip Capacitors MCH15 Series（1005 Size）MCH18 Series（1608 Size） はんだ喰われ防止に、効果的なバリア層に優れた はんだ付け性のコーティング処理を施した電極構造を採用。
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MCH15
MCH18
MCH15
1005size
MCH18
1608size
110pF
4316D
MCH185A050c
MCH155A240J
MCH185A101J
MCH185CN153
MCH155A121J
MCH155C471K
MCH185A220J
MCH185C472K
MCH155A100D
MCH185A330J
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SZP-2026Z
Abstract: rf transistor 2.5GHz SOF-26 transistor 2.4GHz amplifier schematic
Text: SZP-2026Z SZP-2026Z 2.2GHz to 2.7GHz 2W InGaP AMPLIFIER Package: SOF-26 Product Description Features RFMD’s SZP-2026Z is a high linearity single stage class AB Heterojunction Bipolar Transistor HBT amplifier housed in a proprietary surface-mountable plastic encapsulated package. This HBT amplifier is made with InGaP on GaAs device technology
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SZP-2026Z
SOF-26
SZP-2026Z
SZP-2026Z-EVB1
SZP-2026Z-EVB2
EDS-104611
rf transistor 2.5GHz
SOF-26
transistor 2.4GHz amplifier schematic
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TAJB105KLRH
Abstract: SXB-2089Z GaAs pHEMT MMIC medium power amplifier ROHM TRACE CODE MCH185C
Text: SXB-2089Z SXB-2089Z 5MHz to 2500MHz Medium Power InGaP/GaAs HBT Amplifier 5MHz to 2500MHz MEDIUM POWER InGaP/GaAs HBT AMPLIFIER Package: SOT-89 Product Description Features RFMD’s SXB-2089Z amplifier is a high linearity InGaP/GaAs Heterojunction Bipolar Transistor HBT MMIC housed in a low-cost, surface-mountable plastic package. These amplifiers are specially designed for use as
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SXB-2089Z
2500MHz
2500MHz
OT-89
SXB-2089Z
CMOS180
PSF-S01-1mm
EEF-101407
TAJB105KLRH
GaAs pHEMT MMIC medium power amplifier
ROHM TRACE CODE
MCH185C
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SZM-2066Z
Abstract: transistor 2.4GHz amplifier schematic wifi SZM-2066 600s100 transistor 2.4GHz class ab amplifier schematic SZM2066Z
Text: SZM-2066Z SZM-2066Z 2.4GHz to 2.7GHz 2W Power Amplifier 2.4GHz to 2.7GHz 2W POWER AMPLIFIER Package: QFN, 6mmx6mm Product Description Features RFMD’s SZM-2066Z is a high linearity class AB Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip
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SZM-2066Z
SZM-2066Z
11b/g
60052R4CW250
600S100JW250
0805HQ
12XJBB
LL1608FH4N7J
LL1608FH10J
transistor 2.4GHz amplifier schematic wifi
SZM-2066
600s100
transistor 2.4GHz class ab amplifier schematic
SZM2066Z
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CL10B104KONC
Abstract: MCR03J100 MCH185A4R7CK AN021 MCR03*J100 MCH185A390JK SGA-9189 Sirenza amplifier SOT-89 ECB-102216-B AN-021
Text: Design Application Note - AN021 SGA-9189 Amplifier Application Circuits Abstract Sirenza Microdevices’ SGA-9189 is a high performance SiGe amplifier designed for operation from DC to 3500 MHz. This application note illustrates several application circuits for key frequency bands in the
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AN021
SGA-9189
EAN-101534
CL10B104KONC
MCR03J100
MCH185A4R7CK
AN021
MCR03*J100
MCH185A390JK
Sirenza amplifier SOT-89
ECB-102216-B
AN-021
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