MD2369 NPN Search Results

MD2369 NPN Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
MX0912B251Y	Rochester Electronics LLC	MX0912B251Y - NPN Silicon RF Power Transistor (Ampleon Die)
CA3083Z-G	Rochester Electronics LLC	CA3083 - GENERAL PURPOSE HIGH CURRENT NPN TRANSISTOR ARRAY
CA3046	Rochester Electronics LLC	RF Small Signal Bipolar Transistor, 0.05A I(C), 5-Element, Very High Frequency Band, Silicon, NPN, MS-001AA, MS-001AA, 14 PIN
ISL73096EHVF	Renesas Electronics Corporation	Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays

MD2369 NPN Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
MD2369 Abstract: No abstract text available Text: MD2369 NPN Silicon Dual General Purpose Transistor. 7.98 Transistors Multiple Transi. Page 1 of 1 Enter Your Part # Home Part Number: MD2369 Online Store MD2369 Diodes NPN Silicon Dual General Purpose Transistor. Transistors Integrated Circuits Optoelectronics	Original	MD2369 MD2369 com/md2369	PDF
Untitled Abstract: No abstract text available Text: HOME \| CATALOG \| CART \|EXPRESS CHECKOUT \| PARTS WATCH \| NEW ITEMS \|RFQ\| l l Enter Your Part # Home Online Store ¡ Diode s ¡ Transistors ¡ Inte grate d C ircuits ¡ O ptoe le ctronics ¡ Thyristors l Products ¡ Se arch for Parts ¡ R e que st a Q uote ¡ Te st House s	Original	MD2369	PDF
MD8003 Abstract: MD7005 Text: Dual Transistors TO-78 Case PD @ TA=25oC=600mW Total Both Die Equal Power TYPE NO. DESCRIPTION IC (mA) VCBO (V) VCEO (V) hFE @ IC @ VCE (mA) (V) VCE (SAT) (V) @ IC (mA) fT (MHz) MATCHING hFE VBE *TYP MAX MIN MIN MIN MAX MIN % (mV) 2N2060 NPN AMPL/SWITCH	Original	600mW 2N2060 2N2060A 2N2223 2N2223A 2N2453 2N2453A 2N2480 2N2480A 2N2639 MD8003 MD7005	PDF
2n3810 datasheet Abstract: 2N3806 2N3726 2N2453 2N2453A 2N4016 2n4854 to-78 10 amp npn power transistors 2n2913 2N2060 MD6100 Text: Dual Transistors TO-78 Case PD @ TA=25oC=600mW Total Both Die Equal Power TYPE NO. DESCRIPTION IC (mA) VCBO (V) VCEO (V) hFE @ IC @ VCE (mA) (V) VCE (SAT) (V) @ IC (mA) fT (MHz) MATCHING hFE VBE *TYP MAX MIN MIN MIN MAX MIN % (mV) 2N2060 NPN AMPL/SWITCH	Original	600mW 2N2060 2N2060A 2N2223 2N2223A 2N2453 MD7001 MD7002 MD7002A MD7002B 2n3810 datasheet 2N3806 2N3726 2N2453 2N2453A 2N4016 2n4854 to-78 10 amp npn power transistors 2n2913 2N2060 MD6100	PDF
Dual Transistors TO-78 Abstract: MD6100 MD7002 MD7003A md2369 MD7005 MD2219A MD2369A 2N4854 MD2905A Text: Dual Transistors TO-78 Case Continued TYPE NO. DESCRIPTION IC VCBO VCEO (mA) (V) (V) hFE MAX MIN MIN MIN MAX @ IC @ VCE (mA) (V) VCE (SAT ) (V) @ IC (mA) fT (MHz) MATCHING hFE VBE *TYP MIN % (mV) 0.5 150 200 - - 10 0.4 150 200 - - 1 0.25 10 500 - -	Original	MD7001 MD7002 MD7002A MD7002B MD7003 MD7003A MD7003B MD8001 MD8002 MD8003 Dual Transistors TO-78 MD6100 MD7002 MD7003A md2369 MD7005 MD2219A MD2369A 2N4854 MD2905A	PDF
MD918 Abstract: MD8002 MD2369 MD5179 MD6002 MD6100 MD2219A MD2369A MD2369B MD2905A Text: Dual Transistors TO-78 Case Continued TYPE NO. DESCRIPTION IC VCBO VCEO (mA) (V) (V) hFE (V) @ IC @ VCE (mA) (V) VCE (SAT ) (V) @ IC (mA) fT (MHz) MATCHING hFE VBE *TYP MAX MIN MIN MIN MAX MIN % MD982 PNP AMPL/SWITCH 600 60 50 35 - 10 MAX 10 0.5 150 200	Original	MD982 MD2219A MD2369 MD2369A MD2369B MD8001 MD8002 MD8003 2N4854* MD984 MD918 MD8002 MD2369 MD5179 MD6002 MD6100 MD2219A MD2369A MD2369B MD2905A	PDF
UPA39A Abstract: FET package TO-71 UPA38A 2N4043 2N4042 BC337 2N282 2SC1265 SOLITRON mp302 Text: MATCHED PAIRS & COMPOSITES Item Number Part Number Manufacturer V BR CEO hFE (V) Ie Max fT Po Max (A) (Hz) (W) 600m 600m 600m 200M 200M 200M 6.0M 200M 200M 200M 200M 200M 200M 80M 625m 400m 400m 500m 350m 500m 350m 800m 500m 625m 400m 400m 1.5 1.5 1.5 1.5	Original	MD2904A MD2904AF SP26050F SP2905AF SP2905AOF SP2907AF SP2907AOD SP2907AOF MD2905A UPA39A FET package TO-71 UPA38A 2N4043 2N4042 BC337 2N282 2SC1265 SOLITRON mp302	PDF
MJ1005 Abstract: MD5000A 2N3052 MJ12010 IXTP2N100A MD7000 MJ10011 MJ11017 IXTP4N90A MJ12007 Text: STI Type: IXTM3N100A Notes: Breakdown Voltage: 1000 Continuous Current: 3 RDS on Ohm: 7.0 Trans Conductance Mhos: 1.5 Trans Conductance A: Gate Threshold min: Gate Threshold max: Resistance Switching ton: Resistance Switching toff: Resistance Switching ID:	Original	IXTM3N100A O-204AA/TO-3 IXTM3N70A IXTM3N70 O-204AA/TO-3: MJ13081 MJ13091 MJ1005 MD5000A 2N3052 MJ12010 IXTP2N100A MD7000 MJ10011 MJ11017 IXTP4N90A MJ12007	PDF
E112 jfet Abstract: siliconix E412 NPD5564 jfet e300 NPD5566 DATA SHEET OF FET BFW10 E402 dual jfet E430 jfet E310 JFET N NPD5565 Text: Selection Guide and Cross Reference Linear Integrated Systems SMALL SIGNAL DISCRETE SEMICONDUCTORS JFETs DMOS Switches BJTs MOSFETs Linear Integrated Systems 4042 Clipper Court • Fremont, CA 94538 • www.linearsystems.com Tel: 510 490-9160 • Toll Free: 800 359-4023 • Fax: 510 353-0261	Original	LS422 LS423 LS424 LS425 LS426 LS832 LS833 LS4391 LS5911 E112 jfet siliconix E412 NPD5564 jfet e300 NPD5566 DATA SHEET OF FET BFW10 E402 dual jfet E430 jfet E310 JFET N NPD5565	PDF
MD6100 Abstract: PNP UHF transistor MD2219A MD2369 MD2369A MD2369B MD2905A MD5179 MD7000 MD7001 Text: Dual Transistors TO-78 Case Continued vCEO (V) @«c (mA) =E e vCE (V) <0 MD7003B MD8001 MD8002 MD8003 VCBO (V) LU MD7000 MD7001 MD7002 MD7002A MD7002B MD7003 MD7003A •c (mA) MD982 MD2219A MD2369 MD2369A MD2369B MD2905A MD5179 DESCRIPTION > TYPE NO. (V)	OCR Scan	MD982 MD2219A MD2369 MD2369A MD2369B MD2905A MD5179 MD7000 MD7003A MD7003B MD6100 PNP UHF transistor MD7001	PDF
82441 Abstract: MD2369 MD2369AB Text: MOTOROLA SC - CXS TRS/ R 6367254 FJ- Tb MOTOROLA SC <XSTRS/R DE\| f a 3 f c . 7 2 5 M ODfl aH4D 96D 8 2 4 4 0 D _ T - Z 7 - ^ 7 F M A X IM U M RATINGS Symbol Value Collector-Emitter Voltage VCEO 15 Vdc - Collector-Base Voltage VCBO 40 Vdc Emitter-Base Voltage	OCR Scan	MD2369 MQ2369 10A-04, MQ2369 MD2369AB MD2369fAFiBF 82441	PDF
md2369 Abstract: MD2369A Text: MOTORCLA SC XSTRS/R F 12E D \| b3fc.7254 GGÜbSeö b \| M AXIM UM RATIN GS Symbol Value Unit Collector-Emitter Voltage Rating VcEO 15 Vdc Collector-Base Voltage VCBO 40 Vdc Emitter-Base Voltage vebo 5.0 Vdc ic 500 mAdc Collector Current — Continuous One Die	OCR Scan	MD2369, MQ2369 MD2369 10A-04, MQ2369 2369AB MD2369F MD2369A	PDF
MD2369 Abstract: md2905 82440 MD2369A MD2369AF MD2369B MD2369BF MD2369F MD2904 MQ2369 Text: NO T O R O L A SC -CXSTRS/R 6367254 FJ ^ MOTOROLA SC CXSTRS/R D E \| b 3h7a S 4 96 D F ODfl aH4 D 82440 D T - Z 7-^-7 MAXIMUM RATINGS Sym bol Value Collector-Emitter Voltage VCEO 15 Vdc - Collector-Base Voltage VCBO 40 Vdc Emitter-Base Voltage VEBO 5.0 Vdc	OCR Scan	L3b7a54 ODfla44D MD2369 MQ2369 MD2369F md2905 82440 MD2369A MD2369AF MD2369B MD2369BF MD2904 MQ2369	PDF
MD2369 Abstract: MD2369AB MD2369B transistor k84 MD2369A MD2369AF MD2369BF MD2369F MQ2369 Text: M D 2 3 6 9 , A , B s il ic o n M D 2 3 6 9 F , A F , BF M Q 2369 M ULTIPLE SILICON ANNULAR TRANSISTORS NPN SILICON M ULTIPLE TRANSISTORS . . . designed for use as differential am plifiers, dual general-purpose switches and am plifiers, fro n t end detectors, and temperature com	OCR Scan	MD2369, MD2369F, MQ2369 10-COLLECTOR U44im MD2369 MD2369AB MD2369B transistor k84 MD2369A MD2369AF MD2369BF MD2369F MQ2369	PDF

MD8003 Abstract: MD-113 MD7005 2N4854 MD6100 Text: Dual Transistors TO-78 Case Continued TYPE NO. DESCRIPTION •c (mA) v CBO v CEO 00 (V) «C (mA) :E ®Vc6 (V) h MATCHING VCE(SAT )® >C (mA) 00 (MHz) h FE VBE MAX 0.5 % <mV) 150 *TYP MIN 200 60 MIN 50 MiN 35 MAX PNP AMPUSWITCH MAX 600 mm MD982 — 10 10	OCR Scan	MD982 MD2219A MD2369 MD2369A MD2369B MD2905A MD7000 MD7001 MD7002 MD7002A MD8003 MD-113 MD7005 2N4854 MD6100	PDF
MD8002 Abstract: 2n2903 Text: Dual Transistors TO-78 Case P q @ T ^=2 5°C =6 0 0m W Total Both Die Equal Power TYPE NO. DESCRIPTION «C v CBO v CEO (mA) (V) (V) hl=E IC ® V CE (mA) (V) VCE(SV T ) ® ' C <V) ' MAX (mA) ' % (MHz) MATCHING Hf e V BE *TYP MIN % <">V) MIN MAX NPN AMPL/SWITCH	OCR Scan	2N2060 2N2060A 2N2223 2N2223A 2N2453 2N2453A 2N2480 2N2480A 2N2639 2N2640 MD8002 2n2903	PDF
Untitled Abstract: No abstract text available Text: Dual Transistors TO-78 Case Continued TYPE NO. DESCRIPTION •c VCBO v CEO (mA) (V) (V) :E @ lc e v CE (mA) (V) MATCHING VCE(SAT) @ >C (mA) (V) (MHz) h FE Vb e MAX TYP MIN r MAX MIN MIN MIN MAX % (mV) MD982 PNP AMPL/SWITCH 600 60 50 35 . 10 10 0.5 150	OCR Scan	MD982 MD2219A MD2369 MD2369A MD2369B MD8002 MD8003 D3250 MD3251 D7007	PDF
Untitled Abstract: No abstract text available Text: MPQ2369* M AXIM UM RATINGS Rating CASE 646-06, STYLE 1 TO-116 Symbol Value Unit C o lle c to r -E m itte r V o lta g e v CEO 15 Vdc C o lle c to r-B a s e V o lta g e v CBO 40 V dc E m itte r-B a s e V o lta g e Ve b o 4.5 V dc 'c 500 m Adc C o lle c to r C u rre n t — C o n tin u o u s	OCR Scan	MPQ2369* O-116	PDF
Untitled Abstract: No abstract text available Text: MPQ2369* MAXIMUM RATINGS Rating CASE 646-06, STYLE 1 TO-116 Symbol Value Unit C o lle c to r-E m itte r V o lta g e v CEO 15 Vdc C o lle c to r-B a se V o lta g e VCBO 40 V dc E m itte r-B a se V o lta g e v EBO 4.5 Vdc tc 500 m Adc C o lle c to r C urre n t — C o n tin u o u s	OCR Scan	MPQ2369* O-116	PDF
2N2453A Abstract: No abstract text available Text: Dual Transistors TO-78 Case PD TA=25°C=600mW Total Both Die Equal Power TYPE NO. DESCRIPTION •c v CBO VCEO (n»A) (V) (V) h\|=E @lc @ VCE (mA) (V) MATCHING VCE(SAT )® 'C (mA) M (MHz) h FE VBE % 10 <mV) 5.0 3.0 10 5.0 MAX 1.2 50 *TYP MIN 60 150 10 5.0	OCR Scan	600mW 300OW 2N4854* 2N4937 2N4938 2N4939 2N6502 MD984 MD985* MD986 2N2453A	PDF
md918 Abstract: M559-01 md918 Transistor MD708B MD918A M559-02 MD708 M0708B MD708AF MD708F Text: MOTOROLA SC - C X S TR S /R F> T b 6367254 MOTOROLA XSTRS/R SC DE^b3b?254 0002414 96D 8 2 4 1 4 F 4 D'T A 3 ~ ¿ b M A X IM U M RATINGS Symbol Value Unit VCEO 50 Vdc Collector-Base Voltage VCB 75 Vdc Emitter-Base Voltage veb 6.0 Vdc Rating Collector-Emitter Voltage	OCR Scan	m559-01 m559-02 MD918 md918 Transistor MD708B MD918A MD708 M0708B MD708AF MD708F	PDF
md918 Transistor Abstract: germanium MM2264 2N3050 MC369G Text: TH E SEM ICO N D U CTO R DATA BOOK SUPPLEMENT 1 This is the first supplement to the 2nd Edition of the Semiconductor Data Book originally publishedin August 1966. It is produced to keep an up-to-date listing of the most advanced semiconductor products. Devices characterized in this supplement include only the type numbers intro	OCR Scan	MC1550G md918 Transistor germanium MM2264 2N3050 MC369G	PDF
MMBF112L Abstract: MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211 Text: motorcla sc xstrs / r ia e i o I bH t,?as4 3 o o ö s t ii Small-Signal Bipolar Transistors Plastic-Encapsulated M o to ro la 's s m a ll-s ig n a l T O -2 26 p la s tic tra n s is to rs e n c o m p a s s h u n d re d s o f d e v ic e s w ith a w id e v a rie ty	OCR Scan	06050L MMBD914L BAS16L BAL99L MBAV70L MBAV99L MBAV74 BD2835XL MBD2836XL MMBD2837XL MMBF112L MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211	PDF
transistors BC 557C Abstract: BF366 SMD code 307C F199 transistor 2N5793 BC413 motorola ZENER diode marking code z7 equivalent of transistor bc212 bc 214 bc107c motorola 2n555 Text: S e le c to r G u id e s 1 M e ta l-C a n T ra n s is to rs 3 F ie ld -E ffe c t T ra n s is to rs 4 S m a ll-S ig n a l T u n in g , S w itc h in g and Z e n e r D io d e s 5 T a p e a n d R eel S p e c ific a tio n s P a ck ag e O u tlin e D im e n s io n s and	OCR Scan		PDF

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MD2369 NPN Search Results

MD2369 NPN Result Highlights (5)

MD2369 NPN Datasheets Context Search

MD2369

Untitled

MD8003

2n3810 datasheet

Dual Transistors TO-78

MD918

UPA39A

MJ1005

E112 jfet

MD6100

82441

md2369

MD2369

MD2369

MD8003

MD8002

Untitled

Untitled

Untitled

2N2453A

md918

md918 Transistor

MMBF112L

transistors BC 557C