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    Central Semiconductor Corp 2N4937

    TRANSISTOR DUAL TO78
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    N/A 2N4937

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    Bristol Electronics 2N4937 7
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    Raytheon 2N4937

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    2N4937 Datasheets (13)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N4937 Central Semiconductor Leaded Small Signal Transistor Dual - Pol=PNP / Pkg=TO79 / Vceo=40 / Ic=50m / Hfe=50min / fT(Hz)=300M / Pwr(W)=0.5 Original PDF
    2N4937 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N4937 Motorola European Master Selection Guide 1986 Scan PDF
    2N4937 Motorola Dual Amplifier Transistors Scan PDF
    2N4937 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N4937 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N4937 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N4937 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N4937 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N4937 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N4937 New England Semiconductor SMALL SIGNAL DUAL PNP TRANSISTOR TO-78 Scan PDF
    2N4937 Raytheon Selection Guide 1977 Scan PDF
    2N4937 Semiconductor Technology SILICON DUAL DIFFERNTIAL AMPLIFIER TRANSISTORS Scan PDF

    2N4937 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 2N4937DCSM Dimensions in mm inches . 1 4 A 6 5 6.22 ± 0.13 (0.245 ± 0.005) 0.23 rad. (0.009) A = 1.27 ± 0.13 (0.05 ± 0.005) LCC2 (MO-041BB) Pinouts Pin 1 – Collector 1 Pin 2 – Base 1 Pin 3 – Base 2 Parameter 4.32 ± 0.13 (0.170 ± 0.005) 3 2 1.40 ± 0.15


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    PDF 2N4937DCSM MO-041BB) 10/1m 2-Aug-02

    Untitled

    Abstract: No abstract text available
    Text: 20 STERN AVE. SPRINQFIELD, NEW JERSEY 07081 U.SA TELEPHONE: 973 378-2822 (212) 227-8008 FAX: (973) 3784880 2N4937 DUAL AMPLJREfli TRANSISTOR PNP SILICON PACKAGE OUTLINE DIMENSIONS MAXIMUM RATINGS Symbol V.lu. Unit Collector-Emitter Voltage VCEQ 40 Vdc Collector 1 to Collector 2 Voltage


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    PDF 2N4937 Cto25Â

    BC137

    Abstract: LM3661TL-1.40 G2025 LOW-POWER SILICON PNP ST8500 BC137 800 BCY90 NB021 BCY91 2N85
    Text: LOW-POWER SILICON PNP Item Number Part Number 10 NB023FL NB023FZ 2N4285 2SA987F NB021EV NB021FV NB023EV NB023FV 2SA987E 2SA880 ~~~j~~ 15 20 25 30 35 40 2SA721 2N1223 2S3010 2S3010 2N4937 2N4938 2N4939 2N4940 2N4941 2N4942 2N935 2S3210 2N5110 TIPP32 2S3020


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    PDF NB023FL NB023FZ 2N4285 2SA987F NB021EV NB021FV NB023EV NB023FV 2SA987E 2SA880 BC137 LM3661TL-1.40 G2025 LOW-POWER SILICON PNP ST8500 BC137 800 BCY90 NB021 BCY91 2N85

    2N3810 LCC

    Abstract: 206AA *2N2920* LCC 2N3811 JANTX 2n3737 2N2907AUB
    Text: Bipolar Small Signal Transistors Page 1 of 9 Next Home Package Device Type VCEO sus Volts IC (max) Amps hFE@IC/VCE min/max @ mA/V VCE(sat)@ IC/IB COB V@mA/mA pF fT MHZ PNP TO-5/205AD 2N1132A 40 0.6 30/90@150/10 1.5@150/15 30 60 NPN TO-5/205AD 2N1613,L *


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    PDF O-116 2N3810 LCC 206AA *2N2920* LCC 2N3811 JANTX 2n3737 2N2907AUB

    2n4889

    Abstract: 2N4858 TEXAS 2N4418 2sa777 2n4891 2N4917 2SA8150 6ae diode 2N4417 2N6556
    Text: POWER SILICON PNP Item Number Part Number I C 5 10 >= 20 25 30 BCX53 MH0816 MH0818 MM4006 M0818 M0818 MM4031 ST4031 BCX53•6 ZTX552 BOW60 NS0204 2SA780AK BSV17·10 BSV17·10 BSV17·10 BSV17·6 BSV17·6 ~l,;X:';HU 35 40 45 50 2SA777 2SA777 B0418 2N6555 2SB1042M


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    Untitled

    Abstract: No abstract text available
    Text: "type No. 6133167 □□□□□SO fl 37E D SEMELAB LTD Option'1*^ Po,arity 2N4925 2N4928 2N4929 2N4930 2N4931 SCREEN HI-REL SCREEN SCREEN SCREEN NPN PNP PNP PNP PNP 2N4937 2N4999 2N5000 2N5001 2N5002 HI-REL HI-REL HI-REL HI-REL HI-REL PNP PNP NPN PNP NPN


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    PDF 2N4925 2N4928 2N4929 2N4930 2N4931 2N4937 2N4999 2N5000 2N5001 2N5002

    2N4937

    Abstract: 2N4939 2N4938 2N4941 MD3250
    Text: MOTORCLA SC XSTRS/R F 12e D | &>3k72S4 QOát>M¿t> T | r-37-27 2N4937 thru 2N4939 CASE 654-07 STYLE 1 M AXIM UM RATINGS Sym bol Value Unit Collector-Emitter Voltage VCEO 40 Vdc Collector 1 to Collector 2 Voltage Voltage Rating and Lead to Case VC1C2 ±200


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    PDF 2N4937 2N4937, 2N4941 2N4S38 2N4938 2N4938 2N4937 2N4939 MD3250

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


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    2N3816

    Abstract: 2N999 2N3816A 2N3817 2N3817A 2N3838 2N4937 2N4938 2N4939 2N4940
    Text: Discrete Devices U IO U C IC Tra n sisto rs Cont. Differential and Dual Amplifiers (Cont.) L ic ¥ iu c ;> E le c tric a l C h a ra cte ristics @ 25° C (O ne Sid e ) M a x im u m R a tin g s A m b ie n t P q Type P o la rity One Both Side Sides V c E lS a t ) @ I c / I b


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    PDF 2N3816 2N3816A 2N3817 2N3817A 2N4937 T0-78 2N4855 2N997 2N998 2N999 2N3838 2N4938 2N4939 2N4940

    transistor 2N4015

    Abstract: 2N3806
    Text: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL DUAL PNP TRANSISTOR TO-78 VcEO sus VOLTS Ic (max) AMPS 2N3726 45 0.1 2N3727 45 2N3806 PACKAGE DEVICE TYPE Jb TO-78 @ I<yV cE min/max @ mA/V h fE ^CE(sat) @ Ic/I b V @ raA/mA C<F p (MHz) 115@50/5 0.25@50/2.5 8 200 0.1


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    PDF 2N3726 2N3727 2N3806 2N3807 2N3808 2N3809 2N3810 2N3810A 2N3811 2N3811A transistor 2N4015

    MMBF112L

    Abstract: MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211
    Text: motorcla sc xstrs / r ia e i o I bH t,?as4 3 o o ö s t ii Small-Signal Bipolar Transistors Plastic-Encapsulated M o to ro la 's s m a ll-s ig n a l T O -2 26 p la s tic tra n s is to rs e n c o m p a s s h u n d re d s o f d e v ic e s w ith a w id e v a rie ty


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    PDF 06050L MMBD914L BAS16L BAL99L MBAV70L MBAV99L MBAV74 BD2835XL MBD2836XL MMBD2837XL MMBF112L MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211

    2N3055E specification

    Abstract: 2N3350 2N3904D 2N3904DCSM 2n2894 2N3680 2N2222ADCSM 2N3347 2N2993 T05 Package
    Text: BS/CECC Type No. Polarity 2N 2906\ CV-0 PNP 2N2906A; PNP 1CV' ° 2N2907 1 f f j CV-0 PNP CV-0 PNP 2N2907A 2N2913y 1 50002-186 NPN Dual '2N3054 >2N3055 / ^2N3055E r rX2N3209 1 ^¿2N3209L / • ° 50004-042 50003-020 50004-XXX 50004-XXX 2N3347 2N3348 2N3349


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    PDF ai331 2N2906\ 2N2906A* 2N2907 2N2907A 2N2913y 2N2914\ 2N2915 2N2916 2N2917 2N3055E specification 2N3350 2N3904D 2N3904DCSM 2n2894 2N3680 2N2222ADCSM 2N3347 2N2993 T05 Package

    TRIAC 97A6

    Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
    Text: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1


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    PDF OD-80 OD-323 OT-23 OT-89 OT-143 OT-223 OT-323 TRIAC 97A6 S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C

    2n3866s

    Abstract: DIODE 69a LM 2N3904CSM 2N3904DCSM 2N3904D LM7805sm 2N3055E LM7808S LCC3 weight bfy82
    Text: M il / Aerospace Division Sem elab HERMETIC SURFACE MOUNT PACKAGES SEMELAB offers seven ceramic package styles intended for use in Space Vehicles, Aircraft and other critical applications all intended for Surface Mount Applications. SOT23 HERMETIC CERAMIC SURFACE MOUNT PACKAGE LCC1


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    PDF BYV34-300SM BYV34-400ASM BYV34-- 400RSM 400SM BYV34-500ASM BYV34-500RSM BYV34-500SM LM137-SM 2n3866s DIODE 69a LM 2N3904CSM 2N3904DCSM 2N3904D LM7805sm 2N3055E LM7808S LCC3 weight bfy82

    AL102 ATES

    Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
    Text: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible


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    PDF Trans-611 DT1521 2N2270 BC107-182KS ESC182KAS ESC182KBS ESC1Q8-183KS EiC183KBS 8C183KCS BC109-184KS AL102 ATES 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29

    transistors BC 557C

    Abstract: BF366 SMD code 307C F199 transistor 2N5793 BC413 motorola ZENER diode marking code z7 equivalent of transistor bc212 bc 214 bc107c motorola 2n555
    Text: S e le c to r G u id e s 1 M e ta l-C a n T ra n s is to rs 3 F ie ld -E ffe c t T ra n s is to rs 4 S m a ll-S ig n a l T u n in g , S w itc h in g and Z e n e r D io d e s 5 T a p e a n d R eel S p e c ific a tio n s P a ck ag e O u tlin e D im e n s io n s and


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    PDF

    MD8002

    Abstract: 2n2903
    Text: Dual Transistors TO-78 Case P q @ T ^=2 5°C =6 0 0m W Total Both Die Equal Power TYPE NO. DESCRIPTION «C v CBO v CEO (mA) (V) (V) hl=E IC ® V CE (mA) (V) VCE(SV T ) ® ' C <V) ' MAX (mA) ' % (MHz) MATCHING Hf e V BE *TYP MIN % <">V) MIN MAX NPN AMPL/SWITCH


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    PDF 2N2060 2N2060A 2N2223 2N2223A 2N2453 2N2453A 2N2480 2N2480A 2N2639 2N2640 MD8002 2n2903

    2n3817

    Abstract: 2N3804 2N3800 2N3802 2N3812 2n3816 raytheon emitter pad 2N381 2N4942 raytheon npn
    Text: RAYTHEON/ SEMICONDUCTOR T4 7597360 RAYTHEON. ^AYTUFnin RAYTHEON J 0005557 S E M IC O N D U C T O R 94D 05527 Low Level, Low Noise D j - z - f - Z ' l H j g h G a j n A m p | j f ¡e r s Popular Types Description G eneral purpose a m p lifier for low level, low noise and high gain amplifier


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    PDF 75T73fc 2604/JA 2605/JA 54BSC O-116) 14-Lead 100BSC 2n3817 2N3804 2N3800 2N3802 2N3812 2n3816 raytheon emitter pad 2N381 2N4942 raytheon npn

    2N3904DCSM

    Abstract: 2N2222ADCSM 2N3965
    Text: 61 33167 0G00105 S 37E D SEMELAB LTD BS/CECC Polarity Package v CEO •c cont 50003-017 50003-017 50003-017 50003-017 NPN NPN NPN NPN NPN T077 Dual T03 T03 T03 T03 50 60 80 60 80 0.03 10 10 10 10 •150-600 25-90 25-90 50-150 50-150 NPN NPN NPN NPN NPN T039


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    PDF 2N3680 2N3713 2N3714 2N3715 2N3716 2N3719 2N3720 2N3724 2N3724A 2N3725 2N3904DCSM 2N2222ADCSM 2N3965

    2N3806 2N3906

    Abstract: 2N3907 2N3904DCSM 2N2222ADCSM hirel bfy81 2N2640DCSM 2N3904D
    Text: 37E S E M E L A B LTD 5133167 □□□□□17 T> fl ISMLB 7 Type No. Reliability Polarity Option 2N3763 2N3764 2N3765 2N3766 2N3767 HI-REL HI-REL HI-REL HI-REL HI-REL PNP PNP PNP NPN NPN 2N3771 2N3772 2N3773 2N3782 2N3789 SCREEN SCREEN SCREEN SCREEN CECC ^


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    PDF 2N3763 2N3764 2N3765 2N3766 2N3767 2N3771 2N3772 2N3773 2N3782 2N3789 2N3806 2N3906 2N3907 2N3904DCSM 2N2222ADCSM hirel bfy81 2N2640DCSM 2N3904D

    2n2222a SOT23

    Abstract: 2N3904DCSM 2n1485 2N2453 2N3680 2n2222 sot23 BFX81 2N1132 2N1483 2N1484
    Text: L -S tl'-O f " T - 3 3 - o7 iS E M E L A B MANUFACTURING • 37E SEMELAB LTD 6133167 □ □ □0CH 7 Package v CEO "2N 708'\ CV-0 2N 697 CV-0 2N 930 4 CV-0 2N1132 CV-0 2N1483/ CV-0 BS-0 NPN NPN NPN PNP NPN T018 T039 T018 T039 T08 15 40 45 35 40 0.1 0.5 0.1


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    PDF T-33-Ã 2N1132 2N1483/ 2N1484^ 2N1485 2N1486 2N1613 2N1711 2N2060 2N2192 2n2222a SOT23 2N3904DCSM 2n1485 2N2453 2N3680 2n2222 sot23 BFX81 2N1483 2N1484

    BFX36

    Abstract: 2N3904DCSM 2N3904D 2N3680 BFT39 2N2222ADCSM BFX11 BFY84 BLY11 BFT40
    Text: 37E D SEMELAB LTD 31331B7 OOOODTb fl jl S E M E L A B MANUFACTURING! • c BS/CECC Polarity Package v CEO cont h F E BFT37 BFT39 BFT40 BFT41 BFT57 BS-0 BS-0 BS-0 BS-0 BS-0 PNP NPN NPN NPN NPN T039 T039 T039 T039 T018 100 80 60 50 160 5 1 1 1 0.2 50-200 250 typ


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    PDF fll331fl7 BFT37 BFT39 BFT40 BFT41 BFT57 BFT58 BFT59 BFT60 BFT61 BFX36 2N3904DCSM 2N3904D 2N3680 2N2222ADCSM BFX11 BFY84 BLY11

    n3806

    Abstract: 2n3811 motorola 2N3813 2N4942 2n3817 motorola 2N3816 2N3807 2N3808 2N3810 2N3810A
    Text: MULTIPLE SMALL-SIGNAL TRANSISTORS continued Dual Transistors (continued) a v BE mV Max hFE2 Gp dB Min {on ns Max VC£ <C (sat) _ Volts I l B Max I to * w 71 Subscript ID Ref. Point TYPE NO. ° 2 § >f r? hFE1 0.5 0.5 0.5 0.5 0.5 A A A A A 60 60 60 60 60


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    PDF N3806 2N3807 2N3808 2N3809 2N3810 2N3810A 2N4016 2N4854 2N4937 2N4939 2n3811 motorola 2N3813 2N4942 2n3817 motorola 2N3816

    2N3800

    Abstract: germanium diode germanium tu 38 e 2n4051 motorola 2N4280 2N3980 1N3492 MC710F 2N4276 2n3817
    Text: DATA BDI S U P P L E M E NT This is the second supplement to the 2nd Edition of the Semiconductor Data Book originally published in August 1966. It is produced to keep an up-to-date listing of the most advanced semiconductor products. D evices characterized in this supplement include only the type numbers in tro­


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    PDF 29B52595F13 52595F09 2N3800 germanium diode germanium tu 38 e 2n4051 motorola 2N4280 2N3980 1N3492 MC710F 2N4276 2n3817