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    Abstract: No abstract text available
    Text: MECGaNX13 8.6 to 10.4 GHz GaN HEMT Power Amplifier Main Features • 0.25µm GaN HEMT Technology • 8.6 – 10.4 GHz full performances Frequency Range  13W Output Power @ Pin 24 dBm  40% PAE @ Pin 24 dBm  24 dB Linear Gain  Bias: Vd = 25V, Id = 480 mA,


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