MEDIUM POWER TRANSISTORS Search Results

MEDIUM POWER TRANSISTORS Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

MEDIUM POWER TRANSISTORS Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
Medium Power Transistors and Rectifiers for Power Management Applications		NXP Semiconductors	Medium Power Transistors and Rectifiers for Power Management Applications		Original	PDF

MEDIUM POWER TRANSISTORS Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
TBD438 Abstract: BD433 TBD436 TBD437 434 NPN transistors Text: BD433, 434, 435, 436, 437, 438 Medium Power Transistors General Purpose TO-126 Features: • NPN Plastic Medium Power Silicon Transistors. • Intended for use in Medium Power Linear Switching Applications. TO-126 Plastic Package Dimensions Minimum Maximum	Original	BD433, O-126 O-126 TBD433 TBD434 TBD438 BD433 TBD436 TBD437 434 NPN transistors	PDF
7333 A Abstract: Power Transistors TO-126 Case farnell ic 901 BD437 Text: BD437 Medium Power Transistors General Purpose TO-126 Features: • NPN Plastic Medium Power Silicon Transistors. • Intended for use in Medium Power Linear Switching Applications. TO-126 Plastic Package Dimensions Minimum Maximum A 7.4 7.8 B 10.5 10.8 C	Original	BD437 O-126 O-126 7333 A Power Transistors TO-126 Case farnell ic 901 BD437	PDF
Power Transistors TO-126 Case Abstract: BD438 7333 A 9016 g farnell Text: BD438 Medium Power Transistors General Purpose TO-126 Features: • PNP Plastic Medium Power Silicon Transistors. • Intended for use in Medium Power Linear Switching Applications. TO-126 Plastic Package Dimensions Minimum Maximum A 7.4 7.8 B 10.5 10.8 C	Original	BD438 O-126 O-126 Power Transistors TO-126 Case BD438 7333 A 9016 g farnell	PDF
TEA15xx-series Abstract: laptop inverter ccfl low noise transistors bc638 power transistor transistors equivalents TV power transistor datasheet AN10117-01 PNP SOT89 laptop motherboard resistors Royer oscillator Schottky Diode SC-62 Text: Application Note Medium Power Transistors and Rectifiers for Power Management Applications AN10117-01 Philips Semiconductors 1.2/W97 TRAD Medium Power Transistors and Rectifiers for Power Management Applications AN10117-01 Application Note Philips Semiconductors	Original	AN10117-01 2/W97 AN10116: AN10230: PMEG1020EA PMEG2010EA D-22529 TEA15xx-series laptop inverter ccfl low noise transistors bc638 power transistor transistors equivalents TV power transistor datasheet AN10117-01 PNP SOT89 laptop motherboard resistors Royer oscillator Schottky Diode SC-62	PDF
Medium Power Bipolar Transistors Abstract: 2N5320 2N5322 Text: 2N5320, 2N5322 Series Medium Power Bipolar Transistors Features: • High performance, low frequency devices typically with current ratings 1A. Up to 1W power dissipation. • Silicon power switching transistors. • Medium power amplifier and switching applications.	Original	2N5320, 2N5322 Medium Power Bipolar Transistors 2N5320	PDF
2N5322 2N5320 Abstract: 2N5320 2N5322 2N532 Text: 2N5320 & 2N5322 Medium Power Transistors Features: • High performance, low frequency devices typically with current ratings 2A. Up to 1W power dissipation. • Silicon Power Switching Transistors. • Medium Power Amplifier and Switching Applications. 2N5320 NPN	Original	2N5320 2N5322 2N5320 2N5322 2N5322 2N5320 2N532	PDF
Untitled Abstract: No abstract text available Text: PNP Medium Power Transistor Pin Configuration 1. Emitter 2. Base 3. Collector Features: • PNP Silicon Power Switching Transistors • Medium Power Amplifier and Switching Applications Absolute Maximum Ratings: Ta = 25°C unless otherwise specified	Original	BC160-16 BC161-16 element14	PDF
MJE350 b c e Abstract: Power Transistors TO-126 Case MJE350 Text: MJE350 Medium Power PNP Transistors Features: • PNP Plastic Medium Power Silicon Transistor. • Designed for use Line-Operated Applications Such as Low Power, Line Operated Series Pass and Switching Regulator Requiring PNP Capability. TO-126 Plastic Package	Original	MJE350 O-126 MJE350 b c e Power Transistors TO-126 Case MJE350	PDF
8805 VOLTAGE REGULATOR Abstract: MJE350 b c e MJE350 pnp mje350 Text: MJE350 Medium Power PNP Transistors Features: • PNP Plastic Medium Power Silicon Transistor. • Designed for use Line-Operated Applications Such as Low Power, Line Operated Series Pass and Switching Regulator Requiring PNP Capability. TO-126 Plastic Package	Original	MJE350 O-126 8805 VOLTAGE REGULATOR MJE350 b c e MJE350 pnp mje350	PDF
Untitled Abstract: No abstract text available Text: BCP5316Q 80V PNP MEDIUM POWER TRANSISTORS IN SOT223 Description Applications This Bipolar Junction Transistor BJT has been designed to meet the stringent requirements of Automotive Applications. • Medium Power Switching or Amplification Applications 	Original	BCP5316Q OT223 -500mV BCP5616Q DS36980	PDF
Untitled Abstract: No abstract text available Text: BCP5616Q 80V NPN MEDIUM POWER TRANSISTORS IN SOT223 Description Applications This Bipolar Junction Transistor BJT has been designed to meet the stringent requirements of Automotive Applications. • Medium Power Switching or Amplification Applications 	Original	BCP5616Q OT223 500mV BCP5316Q DS36981	PDF
TRANSISTOR BC140 Abstract: TRANSISTOR pnp BC140 TRANSISTOR BC141 BC140 BC140-16 bc141-16 BC141-10 BC140-10 BC140 equivalent BC141 equivalent Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D110 BC140; BC141 NPN medium power transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 May 12 Philips Semiconductors Product specification NPN medium power transistors	Original	M3D110 BC140; BC141 BC160 BC161. MAM317 SCA54 117047/00/02/pp8 TRANSISTOR BC140 TRANSISTOR pnp BC140 TRANSISTOR BC141 BC140 BC140-16 bc141-16 BC141-10 BC140-10 BC140 equivalent BC141 equivalent	PDF
2N6040 Abstract: 2N6045G 2N6043G 2N6040G 2N6042 2N6045 2N6042G 2N6041 2N6043 2N6044 Text: PNP - 2N6040, 2N6042, NPN - 2N6043, 2N6045 2N6043 and 2N6045 are Preferred Devices Plastic Medium-Power Complementary Silicon Transistors Plastic medium-power complementary silicon transistors are designed for general-purpose amplifier and low-speed switching	Original	2N6040, 2N6042, 2N6043, 2N6045 2N6043 2N6045 2N6043 2N6040 2N6045G 2N6043G 2N6040G 2N6042 2N6042G 2N6041 2N6044	PDF
Untitled Abstract: No abstract text available Text: BCP5316Q 80V PNP MEDIUM POWER TRANSISTORS IN SOT223 Description Applications This Bipolar Junction Transistor BJT has been designed to meet the • Medium Power Switching or Amplification Applications stringent requirements of Automotive Applications. •	Original	BCP5316Q OT223 -500mV BCP5616Q DS36980	PDF

2N6045G Abstract: 2N6040 2N6042 2N6045 2N6040G 2N6041 2N6043 2N6044 transistor marking T2 Text: PNP - 2N6040, 2N6042, NPN - 2N6043, 2N6045 2N6043 and 2N6045 are Preferred Devices Plastic Medium-Power Complementary Silicon Transistors Plastic medium-power complementary silicon transistors are designed for general-purpose amplifier and low-speed switching	Original	2N6040, 2N6042, 2N6043, 2N6045 2N6043 2N6045 2N6043 2N6045G 2N6040 2N6042 2N6040G 2N6041 2N6044 transistor marking T2	PDF
Untitled Abstract: No abstract text available Text: STD724 NPN MEDIUM POWER TRANSISTORS Features • SURFACE MOUNTING DEVICE IN MEDIUM POWER DPAK POWER PACKAGE ■ AVAILABLE IN TAPE & REEL PACKING ■ IN COMPLIANCE WITH THE 2002/93/EC EUROPEAN DIRECTIVE 3 1 Applications ■ VOLTAGE REGULATION ■ RELAY DRIVER	Original	STD724 2002/93/EC STD724T4	PDF
BFY51 Abstract: transistor BFY52 BFY50 ic str 6707 BFY52 IC 7811 BFY50 equivalent BP317 ic 709 BFY51 philips Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D111 BFY50; BFY51; BFY52 NPN medium power transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Apr 22 Philips Semiconductors Product specification NPN medium power transistors	Original	M3D111 BFY50; BFY51; BFY52 MAM317 SCA54 117047/00/02/pp8 BFY51 transistor BFY52 BFY50 ic str 6707 BFY52 IC 7811 BFY50 equivalent BP317 ic 709 BFY51 philips	PDF
D724 Abstract: JESD97 STD724 STD724T4 Text: STD724 NPN MEDIUM POWER TRANSISTORS Features • SURFACE MOUNTING DEVICE IN MEDIUM POWER DPAK POWER PACKAGE ■ AVAILABLE IN TAPE & REEL PACKING ■ IN COMPLIANCE WITH THE 2002/93/EC EUROPEAN DIRECTIVE 3 1 Applications ■ VOLTAGE REGULATION ■ RELAY DRIVER	Original	STD724 2002/93/EC STD724T4 D724 JESD97 STD724 STD724T4	PDF
PCOT Abstract: BCW67f BCW66 bss65 BSV62 BCW65A BCW65B BCW65C BCW66F BCW66G Text: SOT-23 TABLE 2 -S IL IC O N PLANAR MEDIUM POWER TRANSISTORS Devices in this table are suitable for medium current, medium power sw itching and general purpose applications. Ratings and Characteristics at 25 °C ambient temperature. _ _ _ _ _ V /lavimnm □	OCR Scan	OT-23 BCW65A BCW65B BCW65C BCW66F BCW66G BCW66H BFQ31/31A 2-00t BFS17/17R PCOT BCW67f BCW66 bss65 BSV62	PDF
2SC2340 Abstract: NE568 MR 6500 BM74 2SC2339 NE56800 NE56803 NE56853 NE56854 NE56857 Text: NEC/ □427414 0001323 4 1SE D CALIFORNIA r-3 3 -c s NPN MEDIUM POWER MICROWAVE TRANSISTOR NE568 SER IES FEATURES DESCRIPTION AND APPLICATIONS • H IG H fs : 4.2 GHz The NE568 series of NPN silicon medium power transistors is designed for medium power S and C band linear amplifiers	OCR Scan	L427414 r-33-0S NE568 NE56800 operate-69 2SC2340 MR 6500 BM74 2SC2339 NE56800 NE56803 NE56853 NE56854 NE56857	PDF
2SC2340 Abstract: transistor BJ 102 131 NE56800 2SC2339 NE568 NE56803 NE56853 NE56857 NE56887 ne56853e Text: NEC/ 1SE D CALIFORNIA □42 741 4 0001323 4 r-3 3 -c S NPN MEDIUM POWER MICROWAVE TRANSISTOR NE568 S E R IE S FEATURES DESCRIPTION AND APPLICATIONS • H IG H f s : 4.2 G H z The NE568 series of NPN silicon medium power transistors is designed for medium power S and C band linear amplifiers	OCR Scan	L427414 r-33-0S NE568 NE56800 2SC2340 transistor BJ 102 131 NE56800 2SC2339 NE56803 NE56853 NE56857 NE56887 ne56853e	PDF
Untitled Abstract: No abstract text available Text: SCS'THOMSON RfflDœiilLICTMDei STZT5550 STZT5551 MEDIUM POWER AMPLIFIER . SILICON EPITAXIAL PLANAR NPN TRANSISTORS . MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING ciRCurrs . GENERAL PURPOSE MAINLY INTENDED FOR USE IN MEDIUM POWER INDUSTRIAL	OCR Scan	STZT5550 STZT5551 STZT5400 STZT5401 P008B	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Medium Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS SOT-223 for Surface Mount MEDIUM POWER TMOS FET 300 mA 60 VOLTS RDS on = 1-7 OHM MAX This TMOS medium power field effect transistor is designed for	OCR Scan	OT-223	PDF
Marking code AM Abstract: No abstract text available Text: DISCRETE SEMICONDUCTORS a ffi SHEET BCX51 ; BCX52; BCX53 PNP medium power transistors 1999 Apr 19 Product specification Supersedes data of 1997 Jul 04 Philips Semiconductors PHILIPS PHILIPS Philips Semiconductors Product specification PNP medium power transistors	OCR Scan	BCX51 BCX52; BCX53 BCX53 BCX54, BCX55 BCX56. BCX51 Marking code AM	PDF

MEDIUM POWER TRANSISTORS Search Results

MEDIUM POWER TRANSISTORS Result Highlights (5)

MEDIUM POWER TRANSISTORS Datasheets (1)

MEDIUM POWER TRANSISTORS Datasheets Context Search

TBD438

7333 A

Power Transistors TO-126 Case

TEA15xx-series

Medium Power Bipolar Transistors

2N5322 2N5320

Untitled

MJE350 b c e

8805 VOLTAGE REGULATOR

Untitled

Untitled

TRANSISTOR BC140

2N6040

Untitled

2N6045G

Untitled

BFY51

D724

PCOT

2SC2340

2SC2340

Untitled

Untitled

Marking code AM