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    Practical statistical simulation for efficient circuit design

    Abstract: kopin
    Text: P1: SFK Trim: 247mm x 174mm CUUK1544-09 9 CUUK1544/Fager Top: 12.653mm Design: Engg C Gutter: 16.871mm 978 0 521 76210 6 June 14, 2011 Practical statistical simulation for efficient circuit design Pete Zampardi, Yingying Yang, Juntao Hu, Bin Li, Mats Fredriksson,


    Original     		PDF 247mm 174mm CUUK1544-09 CUUK1544/Fager 653mm 871mm 7033268A-GEN, com/display/ads2009/Using 28DOE Practical statistical simulation for efficient circuit design kopin

    AN11436

    Abstract: No abstract text available
    Text: 62 7  % BFU530X NPN wideband silicon RF transistor Rev. 1 — 5 March 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon RF transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT143B package. The BFU530X is part of the BFU5 family of transistors, suitable for small signal to medium


    Original     		PDF BFU530X OT143B BFU530X AEC-Q101 AN11436

    Untitled

    Abstract: No abstract text available
    Text: 62 7  % BFU520 NPN wideband silicon RF transistor Rev. 2 — 5 March 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon RF transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT143B package. The BFU520 is part of the BFU5 family of transistors, suitable for small signal to medium


    Original     		PDF BFU520 OT143B BFU520 AEC-Q101

    Untitled

    Abstract: No abstract text available
    Text: AN11426 BFU550W ISM 866 MHz LNA design Rev. 1 — 24 January 2014 Application note Document information Info Content Keywords BFU520, BFU530, BFU550 series, ISM-band, 433MHz 866MHz Abstract This document describes an ISM Frequency LNA design on BFU5xxW Starter kit


    Original     		PDF AN11426 BFU550W BFU520, BFU530, BFU550 433MHz 866MHz OM7960, BFU550W

    BFU590G

    Abstract: No abstract text available
    Text: 62 7  BFU590G NPN wideband silicon RF transistor Rev. 1 — 28 April 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon microwave transistor for high speed, medium power applications in a plastic, 4-pin SOT223 package. The BFU590G is part of the BFU5 family of transistors, suitable for small signal to medium


    Original     		PDF BFU590G OT223 BFU590G AEC-Q101 BFU590GX

    Untitled

    Abstract: No abstract text available
    Text: BFU520Y Dual NPN wideband silicon RF transistor Rev. 1 — 20 February 2014 Product data sheet 1. Product profile 1.1 General description Dual NPN silicon RF transistor for high speed, low noise applications in a plastic, 6-pin SOT363 package. The BFU520Y is part of the BFU5 family of transistors, suitable for small signal to medium


    Original     		PDF BFU520Y OT363 BFU520Y AEC-Q101

    UPC8236

    Abstract: MRFE6VP m74 7 segment display Mounting and Soldering of RF transistors MOBILE jammer GSM 1800 MHZ circuit diagram BLF4G08LS-160A rf Amplifier mhz Doherty 470-860 RF transceiver 802.11AC AN10882 m74 7 segment display input
    Text: RF Manual 16 edition th Application and design manual for High Performance RF products June 2012 NXP enables you to unleash the performance of next-generation RF and microwave designs NXP's RF Manual is one of the most important reference tools on the market for today’s


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: BFU520XR NPN wideband silicon RF transistor Rev. 1 — 5 March 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon RF transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT143R package. The BFU520XR is part of the BFU5 family of transistors, suitable for small signal to


    Original     		PDF BFU520XR OT143R BFU520XR AEC-Q101

    BFU590G

    Abstract: No abstract text available
    Text: 62 7  BFU580G NPN wideband silicon RF transistor Rev. 1 — 28 April 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon microwave transistor for high speed, medium power applications in a plastic, 4-pin SOT223 package. The BFU580G is part of the BFU5 family of transistors, suitable for small signal to medium


    Original     		PDF BFU580G OT223 BFU580G AEC-Q101 BFU590G

    Untitled

    Abstract: No abstract text available
    Text: BFU530XR NPN wideband silicon RF transistor Rev. 1 — 5 March 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon RF transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT143R package. The BFU530XR is part of the BFU5 family of transistors, suitable for small signal to


    Original     		PDF BFU530XR OT143R BFU530XR AEC-Q101

    Untitled

    Abstract: No abstract text available
    Text: AN11425 BFU550W ISM 433 MHz LNA design Rev. 1 — 24 January 2014 Application note Document information Info Content Keywords BFU520, BFU530, BFU550 series, ISM-band, 433MHz 866MHz Abstract This document describes an ISM Frequency LNA design on BFU5xxW Starter kit


    Original     		PDF AN11425 BFU550W BFU520, BFU530, BFU550 433MHz 866MHz OM7960, BFU550W

    Untitled

    Abstract: No abstract text available
    Text: 62 7  BFU590Q NPN wideband silicon RF transistor Rev. 1 — 28 April 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon microwave transistor for high speed, medium power applications in a plastic, 3-pin SOT89 package. The BFU590Q is part of the BFU5 family of transistors, suitable for small signal to medium


    Original     		PDF BFU590Q BFU590Q AEC-Q101 BFU590QX

    BGA7130

    Abstract: LTE repeater
    Text: ON 8 BGA7130 HV S 400 MHz to 2700 MHz 1 W high linearity silicon amplifier Rev. 1 — 9 October 2012 Product data sheet 1. General description The MMIC is a single-stage amplifier, offered in a leadless surface-mount package. It delivers 30 dBm output power at 1 dB gain compression and a superior performance up to


    Original     		PDF BGA7130 BGA7130 LTE repeater

    BA 7891 NG

    Abstract: bts 2140 1b TFF1014 BLF4G08LS-160A bf1107 spice model BF862 spice model RF transceiver 802.11AC Multiple output LNB 802.11AC BGU6104
    Text: 释放潜能 RF 手册第 16 版 高性能 RF 产品应用和设计手册 2012 年 6 月 恩智浦助您释放下一代 RF 和微波设计的潜能 恩智浦 RF 手册是当今 RF 设计市场上最重要的参考工具之一。此手册对我们的全系列 RF 产品进


    Original     		PDF PRF957 TFF1003HN TFF1007HN TFF1014HN TFF1015HN TFF1017HN TFF11070HN TFF11073HN TFF11077HN TFF11080HN BA 7891 NG bts 2140 1b TFF1014 BLF4G08LS-160A bf1107 spice model BF862 spice model RF transceiver 802.11AC Multiple output LNB 802.11AC BGU6104

    Untitled

    Abstract: No abstract text available
    Text: 62 7  % BFU520X NPN wideband silicon RF transistor Rev. 2 — 5 March 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon RF transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT143B package. The BFU520X is part of the BFU5 family of transistors, suitable for small signal to medium


    Original     		PDF BFU520X OT143B BFU520X AEC-Q101

    Untitled

    Abstract: No abstract text available
    Text: 62 7  % BFU550X NPN wideband silicon RF transistor Rev. 1 — 5 March 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon RF transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT143B package. The BFU550X is part of the BFU5 family of transistors, suitable for small signal to medium


    Original     		PDF BFU550X OT143B BFU550X AEC-Q101

    Untitled

    Abstract: No abstract text available
    Text: 62 7  BFU590Q NPN wideband silicon RF transistor Rev. 1 — 28 April 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon microwave transistor for high speed, medium power applications in a plastic, 3-pin SOT89 package. The BFU590Q is part of the BFU5 family of transistors, suitable for small signal to medium


    Original     		PDF BFU590Q BFU590Q AEC-Q101

    Untitled

    Abstract: No abstract text available
    Text: AN11381 BFU550A ISM 433 MHz LNA design Rev. 1 — 21 January 2014 Application note Document information Info Content Keywords BFU520, BFU530, BFU550 series, ISM-band, 433MHz 866MHz Abstract This document describes an ISM Frequency LNA design on BFU5xxA Starter kit


    Original     		PDF AN11381 BFU550A BFU520, BFU530, BFU550 433MHz 866MHz OM7961, BFU550A

    Untitled

    Abstract: No abstract text available
    Text: 21  BGA6130 +9 6 400 MHz to 2700 MHz 1 W high efficiency silicon amplifier Rev. 2 — 12 February 2014 Product data sheet 1. General description The MMIC is a one-stage amplifier, offered in a low-cost leadless surface-mount package. At 3.6 V it delivers 29.5 dBm output power at 3 dB gain compression with


    Original     		PDF BGA6130

    TRANSISTOR SUBSTITUTION 1993

    Abstract: volterra VOLTERRA VT c1e2 hp8566A BFR520 CT-20 ED-11 TRANSISTOR SUBSTITUTION BFR520 transistor
    Text: IEEE JOURNAL ON SOLID-STATE CIRCUITS, VOL. 31, NO. 1, JANUARY 1996 114 Advanced Modeling of Distortion Effects in Bipolar Transistors Using the Mextram Model Leo C. N. de Vreede, Henk G. de Graaff, Koen M outhaan, Student M em ber, IEEE, M arinus de Kok, Joseph L. Tauritz, M ember, IEEE, and Roel G. F. Baets, M ember, IE E E


    OCR Scan     		PDF

    volterra

    Abstract: VOLTERRA VT b2c2 poon Modelling VOLTERRA -VSC1294-LF.D.G.B BFR520 CT-20 BFR520 transistor quasi
    Text: 1994 Bipolar/BiCMOS Circuits & Technology Meeting 3.2 Advanced modelling of distortion effects in bipolar transistors using the Mextram model L.C.N. de Vreede, H.C. de Graaff, K. Mouthaan, M. de Kok, J.L. Tauritz and R.G.F. Baets Delft University of Technology, Dept, of Electrical Engineering


    OCR Scan     		PDF CT-20, volterra VOLTERRA VT b2c2 poon Modelling VOLTERRA -VSC1294-LF.D.G.B BFR520 CT-20 BFR520 transistor quasi

    lm 7803

    Abstract: "BJT Transistors" TRANSISTOR as BC 158 BJT Transistors bipolar BC transistor 60GHz transistor AVALANCHE TRANSISTOR 60Ghz TRANSISTOR 30GHZ 30GHZ
    Text: IEEE BCTM 10.1 A Comprehensive Bipolar Avalanche Multiplication Compact Model for Circuit Simulation WJ. Kloosterman, J.C.J. Paasschens, and R.J. Havens Philips Research Laboratories, Prof. Holstlaan 4, 5656 AA Eindhoven, The Netherlands tel.: +31 40 2744093, email: Willy.Kloosterman@philips.com


    OCR Scan     		PDF 30GHZ, 60GHZ ED-42 ED-39 lm 7803 "BJT Transistors" TRANSISTOR as BC 158 BJT Transistors bipolar BC transistor 60GHz transistor AVALANCHE TRANSISTOR TRANSISTOR 30GHZ 30GHZ

    TRANSISTOR SUBSTITUTION

    Abstract: ED42 Scans-008492 Mextram
    Text: Efficient Param eter Extraction for the M EX TR A M M odel W .J. Kloosterman, J.A.M. Geelen and D.B.M. Klaassen Philips Research Laboratories, Prof. Holstlaan 4, 5656 AA Eindhoven, The Netherlands tel.: +31 40 744093, email: kloosteb@prl.philips.nl A b stract


    OCR Scan     		PDF

    Mextram

    Abstract: GP 004 DIODE 101C 220H 320H PNP TRANSISTor experiments transistor XM
    Text: Paper 9.3 Experience with the New Com pact M E X T R A M M odel for Bipolar Transistors H.C. de GraafF, W.J. Kloosterman, J.A.M. Geelen and M.C.A.M. Koolen Philips Research Laboratories P.O. Box 80000 5600 JA Eindhoven, The Netherlands A bstract Here Qte and Qtc are the emitter and collector de­


    OCR Scan     		PDF ED-32, Mextram GP 004 DIODE 101C 220H 320H PNP TRANSISTor experiments transistor XM