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Toshiba America Electronic Components MG15Q6ES42 Electronic Component
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MG15Q Datasheets (15)

Part	Manufacturer	Description	Datasheet Type	PDF
MG15Q1BS11	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF
MG15Q2YK1	Unknown		Scan	PDF
MG15Q2YL1	Unknown		Scan	PDF
MG15Q2YS9	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF
MG15Q2YS9	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF
MG15Q6EK1	Unknown	Power and Industrial Semiconductors Data Book	Scan	PDF
MG15Q6ES1	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF
MG15Q6ES1	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF
MG15Q6ES42	Toshiba	GTR Module Silicon N Channel IGBT	Scan	PDF
MG15Q6ES42	Toshiba	N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)	Scan	PDF
MG15Q6ES50	Toshiba	N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)	Scan	PDF
MG15Q6ES50A	Toshiba	N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)	Scan	PDF
MG15Q6ES51	Toshiba	GTR Module Silicon N Channel IGBT	Scan	PDF
MG15Q6ES51	Toshiba	N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)	Scan	PDF

MG15Q6ES51A	Toshiba	N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)	Scan	PDF

MG15Q Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
DIODE i2t Abstract: MG15Q6ES42 Text: TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR MG15Q6ES42 GTR Module Unit in mm Silicon N Channel IGBT High Power Switching Applications Motor Control Applications Features • 6 IGBTs are built into 1 package • High speed: tf = 0.5µs Max. trr = 0.5µs (Max.)	Original	MG15Q6ES42 PW03770796 DIODE i2t MG15Q6ES42	PDF
SKIIP 33 nec 125 t2 Abstract: skiip 613 gb 123 ct RBS 6302 ericsson SKIIP 513 gb 173 ct THERMISTOR ml TDK 150M pioneer PAL 010a Project Report of smoke alarm using IC 555 doc SKiip 83 EC 125 T1 ericsson RBS 6000 series INSTALLATION MANUAL Ericsson Installation guide for RBS 6302 Text: Discontinued and Superseded Stock Number History. This document contains Discontinued and Superseded Stock Number History. The information is listed in the following format: Stock Number: The original RS Stock Number of the item. Brief Description: The Invoice Description of the item.	Original	734TL UWEB-MODEM-34 HCS412/WM TLV320AIC10IPFB 100MB NEON250 GA-60XM7E BLK32X40 BLK32X42 SKIIP 33 nec 125 t2 skiip 613 gb 123 ct RBS 6302 ericsson SKIIP 513 gb 173 ct THERMISTOR ml TDK 150M pioneer PAL 010a Project Report of smoke alarm using IC 555 doc SKiip 83 EC 125 T1 ericsson RBS 6000 series INSTALLATION MANUAL Ericsson Installation guide for RBS 6302	PDF
TOSHIBA MG150N2YS40 Abstract: mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40 Text: 小信号トランジスタ SMD ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動したり故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製品の誤作動や故障により､生命･身体･財産が侵害されることのないように､購入	Original	050106DAA1 /SC-70 YTF612 2SK2381 YTF841 2SK2387 YTF442 2SK2149 YTF613 TOSHIBA MG150N2YS40 mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40	PDF
Untitled Abstract: No abstract text available Text: T O S H IB A MG15Q6ES42 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT M G 15Q6ES42 Unit in mm HIGH PO W ER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. 92 .7±0.6 • • • • The Electrodes are Isolated from Case. 6 IGBTs are Built Into 1 Package. Enhancement-Mode	OCR Scan	MG15Q6ES42 15Q6ES42 2-93A3A	PDF
MG15Q6ES42 Abstract: MG15Q 15Q6ES42 Text: TOSHIBA MG15Q6ES42 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG 1 5Q6ES42 Unit in mm HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • The Electrodes are Isolated from Case. • 6 IGBTs are Built Into 1 Package. • Enhancement-Mode • Low Saturation Voltage	OCR Scan	MG15Q6ES42 15Q6ES42 12-fast-on-tab 2-93A3A 961001EAA2 MG15Q6ES42 MG15Q 15Q6ES42	PDF
Untitled Abstract: No abstract text available Text: T O SH IB A MG15Q6ES51A TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG 1 5Q6ES51A HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • The Electrodes are Isolated from Case. High Input Impedance. 6 IGBTs Built Into 1 Package. EQUIVALENT CIRCUIT	OCR Scan	MG15Q6ES51A 5Q6ES51A 961001EAA1	PDF
Untitled Abstract: No abstract text available Text: TOSHIBA MG15Q6ES50A TENTATIVE TOSHIBA GTR MODULE M i 1 RO HIGH PO W ER SWITCHING APPLICATIONS SILICON N CHANNEL IGBT ES 5 0A MOTOR CONTROL APPLICATIONS • H ig h In p u t Im pedance • H ig h Speed : tf =0.3^8 (M ax. Inductive Load • Low Satu ration Voltage	OCR Scan	MG15Q6ES50A 961001EAA1	PDF
Untitled Abstract: No abstract text available Text: T O SH IB A MG15Q6ES42 MTi1 ç n fi F<;4 ? TOSHIBA GTR MODULE SILICON N CHANNEL IGBT Unit in mm HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • The Electrodes are Isolated from Case. • 6 IGBTs are Built Into 1 Package. • Enhancement-Mode	OCR Scan	MG15Q6ES42 v4-02 12-FAST-ON-TAH	PDF
MG15Q6ES42 Abstract: No abstract text available Text: MG15Q6ES42 Unit in mm HIGH POW ER SW ITCHING APPLICATION S. M OTOR CO N TR O L A PPLICATION S. • • • • The Electrodes are Isolated from Case. 6 IGBTs are Built Into 1 Package. Enhancement-Mode Low Saturation Voltage : v CE sat =4.0V (Max.) • High Speed: tf=0.5//s (Max.)	OCR Scan	MG15Q6ES42 2-93A3A 12IH1 MG15Q6ES42	PDF
Untitled Abstract: No abstract text available Text: TO SHIBA TENTATIVE MG15Q6ES50A M G 1 5 Q ES50A TOSHIBA GTR MODULE SILICON N CHANNEL IGBT Unit in mm HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • • • • High Input Impedance High Speed : tf=0.3^s Max. Inductive Load Low Saturation Voltage	OCR Scan	MG15Q6ES50A MG15QES50A 961001EAA1	PDF
MG15Q6ES50 Abstract: 15Q6ES50 Text: TOSHIBA MG15Q6ES50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG 15Q6ES50 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • The Electrodes are Isolated from Case. High Input Impedance. 6 IGBTs Built Into 1 Package. EQUIVALENT CIRCUIT	OCR Scan	MG15Q6ES50 15Q6ES50 2-108E1A 961001EAA1 10//s MG15Q6ES50 15Q6ES50	PDF
MG15Q6ES51 Abstract: 15Q6ES51 transistor bc 930 Text: TOSHIBA MG15Q6ES51 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG 1 5Q6ES51 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • The Electrodes are Isolated from Case. High Input Impedance. 6 IGBTs Built Into 1 Package. EQUIVALENT CIRCUIT	OCR Scan	MG15Q6ES51 15Q6ES51 2-108E1A 961001EAA1 MG15Q6ES51 15Q6ES51 transistor bc 930	PDF
MG15Q6ES42 Abstract: No abstract text available Text: T O SH IB A MG15Q6ES42 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG 15Q6ES42 Unit in mm HIGH PO W ER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • • • The Electrodes are Isolated from Case. 6 IGBTs are Built Into 1 Package. Enhancement-Mode	OCR Scan	MG15Q6ES42 15Q6ES42 12-FAST-ON-TAB MG15Q6ES42	PDF
MG15Q6ES50 Abstract: MG15Q6ES50A 1.5A COMMON CATHODE Text: TOSHIBA MG15Q6ES50A TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG 15Q6 ES50A Unit in mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • The Electrodes are Isolated from Case. High Input Impedance 6 IGBTs Built Into 1 Package. EQUIVALENT CIRCUIT	OCR Scan	MG15Q6ES50A 5Q6ES50A 2-108E2A 961001EAA1 10//s MG15Q6ES50 MG15Q6ES50A 1.5A COMMON CATHODE	PDF

Untitled Abstract: No abstract text available Text: TOSHIBA MG15Q6ES50A m r; 1 = ; n f i F ^ n i TOSHIBA GTR MODULE • ■ Mr SILICON N CHANNEL IGBT la r ta «v v m ■ HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • The Electrodes are Isolated from Case. High Input Impedance 6 IGBTs Built Into 1 Package.	OCR Scan	MG15Q6ES50A 961001EAA1 TjS125Â	PDF
Untitled Abstract: No abstract text available Text: TOSHIBA TENTATIVE MG15Q6ES50A TO SH IBA GTR M O D U LE SILICON N C HANNEL IGBT M G1 5 Q 6ES50A HIGH P O W E R SWITCHING APPLICATIONS M OTOR CONTROL APPLICATIONS • • • • • • High Input Impedance High Speed : tf=0.3/^s Max. Inductive Load Low Saturation Voltage	OCR Scan	MG15Q6ES50A 6ES50A 961001EAA1 --10V	PDF
STR30125 Abstract: B 1403 N mg15q6es42 Text: TOSHIBA MG15Q6ES42 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG 1 5 Q 6 E S 4 2 U nit in mm HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. 7± 0 .g , T.SiCl.^ 7-S±t?.3 7.5±0.3i 5.5Í0.3 1 14±0.3 I Ä 3 14±0.3 l0.5t X8 , 2 -0 5 • The Electrodes are Isolated from Case.	OCR Scan	MG15Q6ES42 2-93A3A STR30125 B 1403 N mg15q6es42	PDF
MG15 Abstract: MG15Q6ES51A mg15q6es51 Text: TOSHIBA MG15Q6ES51A TOSHIBA GTR MODULE SILICON N CHANNEL IGBT M G 1 5 Q 6 ES51 A Unit in mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • The Electrodes are Isolated from Case. High Input Impedance. 6 IGBTs Built Into 1 Package.	OCR Scan	MG15Q6ES51A 15Q6ES51A 2-108E2A 961001EAA1 MG15 MG15Q6ES51A mg15q6es51	PDF
Untitled Abstract: No abstract text available Text: T O SH IB A MG15Q6ES51A TOSHIBA GTR MODULE SILICON N CHANNEL IGBT M fnU nfiF ^li • ■ MF- lap ta «v v ■ m a HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • The Electrodes are Isolated from Case. High Input Impedance. 6 IGBTs Built Into 1 Package.	OCR Scan	MG15Q6ES51A 961001EAA1	PDF
GT250101 Abstract: MG150J2YS40 MG75Q2YS11 MG400Q1US11 MG200Q1JS9 MG75J2YS40 MG50J6ES40 MG200Q2YS91 MG75J6ES40 mg100q2ys9 Text: Insulated ìate Bipolar Transistors (IG BTs Milestones in IGBT Technology In 1986, Toshiba started the production of its 1st Generation 1000V IGBTs. With the introduction of Toshiba’s 2nd Generation in 1989, IGBTs were made available in High Speed and Low Saturation types for both a 600V and a	OCR Scan	2-99A1A 2-99B1A GT250101 MG150J2YS40 MG75Q2YS11 MG400Q1US11 MG200Q1JS9 MG75J2YS40 MG50J6ES40 MG200Q2YS91 MG75J6ES40 mg100q2ys9	PDF
MG15J6ES40 Abstract: MG150Q2YS40 MG300J2YS50 MG300Q2YS40 MG75Q2YS40 MG25Q2YS40 MG200Q2YS40 MG300Q2YS4 Text: .2 Short-Circuit Guarantee General conditions Tim e b etw een short-circuits > 1 A llowed n u m b er o f short-circuits 100 Junction tem peratu re before short-circuit < 125 s °C Electrical Conditions for 600 V Types T ype No. Rg min / £2 VCE/V VCEP/V MG15J6ES40	OCR Scan	MG15J6ES40 MG2SJ6KS40 MG50J2YS50 MG50J6KS50 MG75J2YS50 MG75J6KS50 100J2YS50 MG100J6KS50 MG150J2YS50 MG200J2YS50 MG150Q2YS40 MG300J2YS50 MG300Q2YS40 MG75Q2YS40 MG25Q2YS40 MG200Q2YS40 MG300Q2YS4	PDF
MG200J2YS50 Abstract: 2-94D4A MG75Q2YS50 MG300J2YS50 2-109C1A MG200Q1US41 MG300Q1US41 MG300Q1US51 MG400J2YS50 mg200q2ys50 Text: MHTEPTEKC www.i-t.su info@i-t.su Ten: 495 739-09-95, 644-41-29 M o A y n u IG B T $ u p M b i T o s h i b a fln a n a 3 0 H p a 6 o H nxT eM ne paT yp np0M3B0AMTenb Kofl: Uce lc Icm :o t -4 0 °C a o + 1 2 5 °C : T o s h ib a Ucesat npH lc Tr(typ.j Tf(typ.)	OCR Scan	flnana30H ot-40Â MG200Q1US41 2-109A4A MG300Q1US41 MG300Q1US51 2-109F1A MG400Q1US41 MG200J2YS50 2-94D4A MG75Q2YS50 MG300J2YS50 2-109C1A MG400J2YS50 mg200q2ys50	PDF
IGBT 200A 1200V Abstract: T0247 T0220AB BUP313D IGBT IRG4BC20KD igbt 20A 1200v IGBT 1200V 60A T0247A BUP314D MG50Q2YS40 Text: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su electronics Ten: 495 739-09-95, 644-41-29 TpaH3MCTopbi h MOflynM IGBT b an^aBMTHOM nop^AKe BUP203 (T0220) KpaTKoe onMcaHMe MG50Q2YS40 BUP212 BUP213 BUP313 BUP313D BUP314 BUP314D GT20D101-T0s GT20D201-T0s HGTG12N60A4D HGTG30N60B3D	OCR Scan	bup203 t0220) BUP212 BUP213 BUP313 BUP313D BUP314 BUP314D GT20D101-T0s GT20D201-T0s IGBT 200A 1200V T0247 T0220AB BUP313D IGBT IRG4BC20KD igbt 20A 1200v IGBT 1200V 60A T0247A BUP314D MG50Q2YS40	PDF
j2y transistor Abstract: T15J10 MP4704 MG100M2CK1 2sb834 MP3103 MG50J6ES91 MP3002 mp4505 2sc497 Text: As you well know, semiconductors are today essential for use in a very wide range of applications— from consumer to industrial use. In any application, your choice of Toshiba semiconductors will always be correct. To help you choose which semi conductor is correct for your application, this brochure outlines maximum ratings,	OCR Scan	O220AB O-126 j2y transistor T15J10 MP4704 MG100M2CK1 2sb834 MP3103 MG50J6ES91 MP3002 mp4505 2sc497	PDF

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MG15Q Search Results

MG15Q Price and Stock

Toshiba America Electronic Components MG15Q6ES42

MG15Q Datasheets (15)

MG15Q Datasheets Context Search

DIODE i2t

SKIIP 33 nec 125 t2

TOSHIBA MG150N2YS40

Untitled

MG15Q6ES42

Untitled

Untitled

Untitled

MG15Q6ES42

Untitled

MG15Q6ES50

MG15Q6ES51

MG15Q6ES42

MG15Q6ES50

Untitled

Untitled

STR30125

MG15

Untitled

GT250101

MG15J6ES40

MG200J2YS50

IGBT 200A 1200V

j2y transistor