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    MGF11 Search Results

    MGF11 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MGF1100 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    MGF1100 Unknown FET Data Book Scan PDF
    MGF1102 Unknown High Frequency Device Data Book (Japanese) Scan PDF
    MGF1102 Unknown FET Data Book Scan PDF

    MGF11 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: MGF1102 Transistors N-Channel Dual-Gate UHF/Microwave MESFET V BR DSS (V) V(BR)GSS (V)-6.0 I(D) Max. (A)80m P(D) Max. (W)300m Maximum Operating Temp (øC)150 I(DSS) Min. (A)15m I(DSS) Max. (A)80m @V(DS) (V) (Test Condition)3.0 @Temp (øC) (Test Condition)25


    Original     		PDF MGF1102

    Untitled

    Abstract: No abstract text available
    Text: MGF1100 Transistors N-Channel UHF/Microwave MESFET V BR DSS (V) V(BR)GSS (V)-6 I(D) Max. (A)60m P(D) Max. (W)150m Maximum Operating Temp (øC)150õ I(DSS) Min. (A)15m I(DSS) Max. (A)60m @V(DS) (V) (Test Condition)3 @Temp (øC) (Test Condition)25 g(fs) Min. (S) Trans. conduct.10m


    Original     		PDF MGF1100

    UF4007 equivalent

    Abstract: No abstract text available
    Text: User's Guide SLLU136A – September 2011 – Revised November 2012 ISO5500EVM This document describes the ISO5500 Evaluation Module EVM and allows designers to analyze and evaluate the Texas Instruments ISO5500 Isolated Gate Driver. The ISO5500EVM can be used to evaluate device parameters while acting as a guide for board layout.


    Original     		PDF SLLU136A ISO5500EVM ISO5500 ISO5500EVM 10-nF) O-247 ISO5500. UF4007 equivalent

    MGF1802

    Abstract: mgf431 MGF43180 mitsubishi mgf MGF1902B-65
    Text: MGF431OD Series L1~o- o~i -oqof- SUPER LOW NOISE InOaAs HEMT DESCRIPTION OUTLINE DRAWING The MGF431OD series super-low-noise HEMT High Electron Mobility Transistor is designed for use in X to K band amplifiers. The hermetically sealed metal-ceramic package assures minimum parasitic losses, and has a


    Original     		PDF MGF431OD 12GHz MGF4314D: MGF4316D: MGF4317D: MGF4318D: 12GHz MGF4S17D-O1 MGF43I4E45. MGF1802 mgf431 MGF43180 mitsubishi mgf MGF1902B-65

    MGF1102

    Abstract: mgf11 dual-gate N-Channel, Dual-Gate FET
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1102 ¡ FOR LOW-NOISE AMPLIFIERS DUAL-GATE N-CHANNEL SCHOTTKY BARRIER GATE TYPE DESCRIPTION OUTLINE DRAWING The M G F 1 1 0 2 is a low noise and high gain GaAs dual­ gate FET for L to C band applications. Unit: millimeters inches


    OCR Scan     		PDF MGF1102 MGF1102 mgf11 dual-gate N-Channel, Dual-Gate FET

    MGF1102

    Abstract: N-Channel, Dual-Gate FET 251C dual-gate
    Text: bSMSâST D017ÔE3 Sbö MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1102 FOR LOW-NOISE AMPLIFIERS DUAL-GATE N-CHANNEL SCHOTTKY BARRIER GATE TYPE DESCRIPTION OUTLINE DRAWING The M G F 1 1 0 2 is a low noise and high gain GaAs dual­ gate FET for L to C band applications.


    OCR Scan     		PDF MGF1102 MGF1102 N-Channel, Dual-Gate FET 251C dual-gate

    3SK242

    Abstract: MGF1100 3SK246 3SK243 3SK244 tv tuner 3SK245 470M M91F gaas fet vhf uhf
    Text: - 184 - f € m £ tt € m & m & * 1 * K # X fê Æ: S r- V m * à (V) * * * (A) P d/ P c h (W> Igss (max) (A) Vg s (V) fô & fê V pi (min) (max) V g 2S (max) (V) (A) (A) (V) te ìf (Ta=25'C) Vp2 (max) (V) gm (min) (typ) V d s (S) 1 (si (V) Vg i s (V)


    OCR Scan     		PDF 3SK242 3SK243 3SK244 3SK245 3SK246 15dBmin/17dBtyp 900MHz 3SK244 20dBmin/23dBtyp MGF1100 tv tuner 470M M91F gaas fet vhf uhf

    MGF1200

    Abstract: MGF4310 MGF1100 MGF1412 MGF4301 MGF1304 MGF7003 MGF1102 MGF1302 MGF4305A
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> SYMBOL ON PACKAGE EXAMPLE OF SYMBOL ON MICRO DISK PACKAGE W ithou t bottom bar w ith b o tto m bar Blue A p r. O o t. Orange M ay N ov. B lack June D ec. Red July Jan . Green A ug. Feb. Brown S ep. M a r. « L e f t side c h a ra c te r in d ic a te s th e type num ber.


    OCR Scan     		PDF MGF1102 MGF1302 MGF1303B MGFI323 MGF1402B MGFI412B MGF1403B MGF1423B MGFI425B MGFI902B MGF1200 MGF4310 MGF1100 MGF1412 MGF4301 MGF1304 MGF7003 MGF4305A

    MGF1202

    Abstract: MG15G1AM1 MGF1402 mgf1102 MGF1305 MG36N06E MGF1302 MG35N06E MG15C4HM1 MG15D4GM1
    Text: - 150 - * m MG15C4HM1 MG15D4GM1 MG15D4HM1 MG15D6EM1 MG15G1AM1 MG15G4GM1 MGX5G6EM1 ffl % M2 M2 M2 M2 M2 M2 M2 & m ÎS + 11/ . \ V* K V X E# * » j£ Vg s * X * * (V) X P d /P c h (A) * * (W) (min) (max) Vd s (V) (V) (V) gm (min) (typ) V d s (S) (V) (S)


    OCR Scan     		PDF MG15C4HM1 MG15D4GM1 MG15D4HM1 MG15D6EM1 MG15G1AM1 450220AB) MG30N10E 05typ O-220AB) MG30N06EL MGF1202 MGF1402 mgf1102 MGF1305 MG36N06E MGF1302 MG35N06E

    MGF1100

    Abstract: GF1100 Gf-1100 mgf11 dual-gate N-Channel, Dual-Gate FET
    Text: MITSUBISHI {DISCRETE SC> "TI DE IbEMTfla11! □□10007 MITSUBISHI SEMICONDUCTOR <GaAs FET> 6 2 4 98 29 MITSUBISHI DISCRETE SC 9 ID 10007 D 1-31-2S M GF1100 FOR LOW-NOISE AMPLIFIERS DUAL-GATE N-CHANNEL SCHOTTKY BARRIER GATE TY P E DESCRIPTION The M G F 1 1 0 0 is designed fo r use in the 500 M H z to 4 G H z


    OCR Scan     		PDF 1-31-2S GF1100 MGF1100 GF1100 Gf-1100 mgf11 dual-gate N-Channel, Dual-Gate FET