top 261
Abstract: GD-32 mgf4941al InGaAs HEMT mitsubishi
Text: MITSUBISHI SEMICONDUTOR <GaAs FET> 18/May/2007 MGF4941AL SUPER LOW NOISE InGaAs HEMT DESCRIPTION Outline Drawing The MGF4941AL super-low noise HEMT High Electron Mobility Transistor is designed for use in Ku band amplifiers. FEATURES Low noise figure @ f=12GHz
|
Original
|
18/May/2007
MGF4941AL
MGF4941AL
12GHz
GD-32
4000pcs
top 261
GD-32
InGaAs HEMT mitsubishi
|
PDF
|
GD-32
Abstract: mgf4941al fet K 727
Text: MITSUBISHI SEMICONDUTOR <GaAs FET> Dec./2007 MGF4941AL SUPER LOW NOISE InGaAs HEMT DESCRIPTION Outline Drawing The MGF4941AL super-low noise HEMT High Electron Mobility Transistor is designed for use in Ku band amplifiers. FEATURES Low noise figure @ f=12GHz
|
Original
|
MGF4941AL
MGF4941AL
12GHz
GD-32
4000pcs
GD-32
fet K 727
|
PDF
|
mgf4941al
Abstract: nozzle heater Halide hot air gun 450 chip 1097E MGF4941
Text: Technical Note for MGF4941AL 1. Recommended foot pattern 2.80 Unit : mm Tolerance : ±0.05 2.60 2.06 0.89 2.80 2.60 2.06 2.75 4.15 0.74 * 0.69 0.54 4-φ0.3T/H Point Circled numbers are very important length determining the accuracy of self alignment. Please don’t change these length as far as
|
Original
|
MGF4941AL
50-ohm
254mm)
QL-1097E
mgf4941al
nozzle heater
Halide
hot air gun
450 chip
1097E
MGF4941
|
PDF
|
RO4350B ROGERS
Abstract: transistor "micro-x" "marking" 3 RO4350B max current MGF4941CL GD-32 low noise Micro-X marking "K" RO4350B
Text: < Low Noise GaAs HEMT > MGF4941CL Micro-X type plastic package DESCRIPTION The MGF4941CL super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in K band amplifiers. The MGF4941CL is designed for automotive application and AEC-Q101
|
Original
|
MGF4941CL
MGF4941CL
AEC-Q101
4000pcs
RO4350B ROGERS
transistor "micro-x" "marking" 3
RO4350B max current
GD-32
low noise Micro-X marking "K"
RO4350B
|
PDF
|
MGF4941AL
Abstract: MGF4941 GD-32
Text: MITSUBISHI SEMICONDUTOR <GaAs FET> Preliminary MGF4941AL 26/Dec./2006 SUPER LOW NOISE InGaAs HEMT DESCRIPTION Outline Drawing The MGF4941AL super-low noise HEMT High Electron Mobility Transistor is designed for use in Ku band amplifiers. ③ FEATURES Low noise figure
|
Original
|
26/Dec
MGF4941AL
MGF4941AL
12GHz
GD-32
4000pcs
MGF4941
GD-32
|
PDF
|
Untitled
Abstract: No abstract text available
Text: < Low Noise GaAs HEMT > MGF4941CL Micro-X type plastic package DESCRIPTION The MGF4941CL super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in K band amplifiers. The MGF4941CL is designed for automotive application and AEC-Q101
|
Original
|
MGF4941CL
MGF4941CL
AEC-Q101
4000pcs
|
PDF
|
1 928 405 766
Abstract: GD-32 rogers 4403
Text: < Low Noise GaAs HEMT > MGF4941AL Micro-X type plastic package DESCRIPTION The MGF4941AL super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in Ku band amplifiers. Outline Drawing FEATURES Low noise figure @ f=12GHz NFmin. = 0.35dB (Typ.)
|
Original
|
MGF4941AL
MGF4941AL
12GHz
4000pcs
1 928 405 766
GD-32
rogers 4403
|
PDF
|
Micro-X marking "K"
Abstract: low noise Micro-X marking "K" Micro-X Marking E RO4350B rogers HEMT marking G HEMT marking K GD-32 hemt low noise die Micro-X Marking v transistor "micro-x" "marking" 3
Text: PRELIMINARY < Low Noise GaAs HEMT > MGF4941CL Micro-X type plastic package DESCRIPTION The MGF4941CL super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in K band amplifiers. Outline Drawing FEATURES Low noise figure @ f=25.2GHz
|
Original
|
MGF4941CL
MGF4941CL
4000pcs
Micro-X marking "K"
low noise Micro-X marking "K"
Micro-X Marking E
RO4350B rogers
HEMT marking G
HEMT marking K
GD-32
hemt low noise die
Micro-X Marking v
transistor "micro-x" "marking" 3
|
PDF
|
mgf4941al
Abstract: MITSUBISHI electric R22 GD-32
Text: MITSUBISHI SEMICONDUTOR <GaAs FET> Preliminary MGF4941AL 19/Jan./2007 SUPER LOW NOISE InGaAs HEMT DESCRIPTION Outline Drawing The MGF4941AL super-low noise HEMT High Electron Mobility Transistor is designed for use in Ku band amplifiers. FEATURES Low noise figure
|
Original
|
19/Jan
MGF4941AL
MGF4941AL
12GHz
GD-32
4000pcs
MITSUBISHI electric R22
GD-32
|
PDF
|
MGF4937
Abstract: MGFG5H1503 MGF4937AM GD-32 MGFG5H1502 MGF0904 mgfc39v5964 MGF2430 MGF0909A BA012J1
Text: HIGH FREQUENCY DEVICES High Frequency Devices The Best Solution for Realizing the Information Era. Communication networks, such as high speed Internet, video-on-demand and high-speed data communcation, are developing rapidly. We are ready to offer the best solution to the systems for realizing the information era by providing a variety of GaAs/GaN products designed
|
Original
|
H-CX587-R
KI-1311
MGF4937
MGFG5H1503
MGF4937AM
GD-32
MGFG5H1502
MGF0904
mgfc39v5964
MGF2430
MGF0909A
BA012J1
|
PDF
|
MGFS45H2201G
Abstract: MGFS40H2201G MGF0909A sirio mgfc36v-a QVC12 MGF1907A MGF4961 mgf4941al mitsubishi mgf
Text: GaAs DEVICES GENERAL CATALOG MITSUBISHI GaAs solutions for communication networks in the information era. Multimedia Network 1 PRODUCTS 3 APPLICATION 7 PACKAGE 9 BS / CS PDC/GSM/CDMA Multimedia Network WiMAX Features We e provide provide a variety variety
|
Original
|
H-CR587-J
KI-0612
MGFS45H2201G
MGFS40H2201G
MGF0909A
sirio
mgfc36v-a
QVC12
MGF1907A
MGF4961
mgf4941al
mitsubishi mgf
|
PDF
|
gaas fet marking B
Abstract: gaas fet micro-X Package marking gaas fet marking a marking K gaas fet MGF1961A gaas fet micro-X Package gaas fet marking J MGF1964A MGF1963A Micro-X marking "K"
Text: Marking manner of MITSUBISHI GaAs FET QL-1104E-A July/2008 [Leadless ceramic package] GD-26, 27 Terminal position (from Top View) Top View ① ② B 0 1AL B 0 1AL Electrodes direction: ① Gate ② Source ③ Drain ② ③ ① ② ③ Drain Gate Source
|
Original
|
QL-1104E-A
July/2008)
GD-26,
MGF4951A/52A
MGF4953A/54A
MGF1951A
MGF1952A
MGF1953A
MGF1954A
MGF4851A
gaas fet marking B
gaas fet micro-X Package marking
gaas fet marking a
marking K gaas fet
MGF1961A
gaas fet micro-X Package
gaas fet marking J
MGF1964A
MGF1963A
Micro-X marking "K"
|
PDF
|
