MGF4957A Search Results

MGF4957A Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
MGF4957A		Mitsubishi	super-low noise HEMT (High Electron Mobility Transistor)		Original	PDF

MGF4957A Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
InGaAs HEMT mitsubishi Abstract: transistor P7d MGF4957A Fet P7d Text: June/2004 MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF4957A SUPER LOW NOISE InGaAs HEMT Leadless Ceramic Package DESCRIPTION Outline Drawing The MGF4957A super-low noise HEMT (High Electron Mobility Transistor) is designed for use in C to K band amplifiers. The lead-less ceramic package assures minimum parasitic losses.	Original	PDF	June/2004 MGF4957A MGF4957A 12GHz 3000ps, InGaAs HEMT mitsubishi transistor P7d Fet P7d

Catalog Datasheet

MFG & Type

PDF

Document Tags

InGaAs HEMT mitsubishi

Abstract: transistor P7d MGF4957A Fet P7d
Text: June/2004 MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF4957A SUPER LOW NOISE InGaAs HEMT Leadless Ceramic Package DESCRIPTION Outline Drawing The MGF4957A super-low noise HEMT (High Electron Mobility Transistor) is designed for use in C to K band amplifiers. The lead-less ceramic package assures minimum parasitic losses.

Original

PDF

June/2004 MGF4957A MGF4957A 12GHz 3000ps, InGaAs HEMT mitsubishi transistor P7d Fet P7d