Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    MGFC36V4450 Search Results

    MGFC36V4450 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MGFC36V4450 Unknown High Frequency Device Data Book (Japanese) Scan PDF
    MGFC36V4450 Unknown FET Data Book Scan PDF
    MGFC36V4450A Mitsubishi 4.4 ~ 5.0GHz BAND 4W INTERNALLY MATCHED GaAs FET Original PDF
    MGFC36V4450A Mitsubishi FET, ID 3.75 A Scan PDF

    MGFC36V4450 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    MGFC36V4450A

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC36V4450A 4.4 ~ 5.0GHz BAND 4W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC36V4450A is an internally impedance-matched GaAs power FET especially designed for use in 4.4 ~ 5.0 GHz band amplifiers.The hermetically sealed metal-ceramic


    Original
    MGFC36V4450A MGFC36V4450A 25dBm 10MHz PDF

    MGFC36V4450A

    Abstract: MGFC36V4450
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC36V4450A 4.4 ~ 5.0GHz BAND 4W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC36V4450A is an internally impedance-matched GaAs power FET especially designed for use in 4.4 ~ 5.0 GHz band amplifiers.The hermetically sealed metal-ceramic


    Original
    MGFC36V4450A MGFC36V4450A 25dBm 10MHz June/2004 MGFC36V4450 PDF

    Untitled

    Abstract: No abstract text available
    Text: < C band internally matched power GaAs FET > MGFC36V4450A 4.4 – 5.0 GHz BAND / 4W DESCRIPTION OUTLINE DRAWING The MGFC36V4450A is an internally impedance-matched GaAs power FET especially designed for use in 4.4 – 5.0 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original
    MGFC36V4450A MGFC36V4450A -45dBc 25dBm PDF

    ID11

    Abstract: No abstract text available
    Text: < C band internally matched power GaAs FET > MGFC36V4450A 4.4 – 5.0 GHz BAND / 4W DESCRIPTION OUTLINE DRAWING The MGFC36V4450A is an internally impedance-matched GaAs power FET especially designed for use in 4.4 – 5.0 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original
    MGFC36V4450A MGFC36V4450A -45dBc 25dBm ID11 PDF

    C42V5964

    Abstract: MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776
    Text: Please Read “Notes” First! Contents Notes Contact Addresses MITSUBISHI ELECTRIC CORPORATION Contents Si Devices GaAs Devices Optical Devices Applications Quality Assurance and Reliability Testing Optical Modules Top Page © MITSUBISHI ELECTRIC CORPORATION


    Original
    M6STA-005VA/WA/SA MF-156STA-006VA/WA/SA MF-156SRA-002VA/WA/SA MF-622STA-004VA/WA/SA MF-622STA-005VA/WA/SA MF-622STA-006VA/WA/SA MF-622SRA-002VA/WA/SA MF-2500STA-002VA/WA, 003VA/WA, 004VA/WA C42V5964 MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776 PDF

    MGF4937

    Abstract: MGFG5H1503 MGF4937AM GD-32 MGFG5H1502 MGF0904 mgfc39v5964 MGF2430 MGF0909A BA012J1
    Text: HIGH FREQUENCY DEVICES High Frequency Devices The Best Solution for Realizing the Information Era. Communication networks, such as high speed Internet, video-on-demand and high-speed data communcation, are developing rapidly. We are ready to offer the best solution to the systems for realizing the information era by providing a variety of GaAs/GaN products designed


    Original
    H-CX587-R KI-1311 MGF4937 MGFG5H1503 MGF4937AM GD-32 MGFG5H1502 MGF0904 mgfc39v5964 MGF2430 MGF0909A BA012J1 PDF

    MGFS45H2201G

    Abstract: MGFS40H2201G MGF0909A sirio mgfc36v-a QVC12 MGF1907A MGF4961 mgf4941al mitsubishi mgf
    Text: GaAs DEVICES GENERAL CATALOG MITSUBISHI GaAs solutions for communication networks in the information era. Multimedia Network 1 PRODUCTS 3 APPLICATION 7 PACKAGE 9 BS / CS PDC/GSM/CDMA Multimedia Network WiMAX Features We e provide provide a variety variety


    Original
    H-CR587-J KI-0612 MGFS45H2201G MGFS40H2201G MGF0909A sirio mgfc36v-a QVC12 MGF1907A MGF4961 mgf4941al mitsubishi mgf PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> p la 0 , * p^ 00 T s > nue M G F C 3 6 V 4 4 5 0 4 .4 ~ S .0 G H z BAND 4W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC36V4450 is an internally impedance-matched GaAs power F E T especially designed for use in 4.4 ~ 5.0


    OCR Scan
    MGFC36V4450 Item-01: Item-51: 27C102P, RV-15 16-BIT) T-46-1 PDF

    MGFC36V4450A

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR GaAs FET MGFC36V4450A 4.4-5-OGHz BAND 4W INTERNALLY MATCHED GaAs FET D E S C R IP T IO N The M G FC 36V4450A is an internally O U T L IN E D R A W IN G impedance-matched GaAs power FET especially designed fo r use in 4.4 ~5 .0 G H z


    OCR Scan
    MGFC36V4450A MGFC36V4450A 45dBc ltem-01 ltem-51 10MHz' PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET MGFC36V4450A 4.4-5 .OGHz BAND 4W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING The MGFC36V4450A is an internally impedance-matched U n it: millimeters inches) GaAs power FET especially designed for use in 4.4~5.0GHz


    OCR Scan
    MGFC36V4450A MGFC36V4450A 45dBc M5M27C102P, RV-15 16-BIT) PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR GaAs FET MGFC36V4450A 4.4-5.0GHZ BAND 4W INTERNALLY MATCHED GaAs FET D E S C R IP T IO N GaAs power FET especially designed for use in 4.4~5.0GHz band amplifiers. The hermetically sealed U n it: millimeters (inches) O U T L IN E D R A W IN G


    OCR Scan
    MGFC36V4450A MGFC36V4450A 45dBc PDF

    MGF4919G

    Abstract: MGF4919 mgf1903b MGF0907B 14512H mgf4316g MGFC45V2527 MGF1923 MGFC38V3642 MGF0904A
    Text: lid GaAs FETs •GaAs FET SERIES FOR MICROWAVE-BAND LOW-NOISE AMPLIFIERS <Ta = 25-c> PT If f -6 mA ¡¡m i 100 360 < (GHe) ' (mA) f t 3 10 NFmin max (dB) Qs min (dB! 11 4 1.4 4 1.0 12 2.0 i I MGF1302 Vf l P -6 -6 -6 80 240 3 10 MGF1323 -6 -6 80 240 3 10


    OCR Scan
    MGF1302 MGF1303B MGF1323 MGF14 MGF1412B MGF1403B MGF1423B MGF1425B MGF1902B MGF1903B MGF4919G MGF4919 MGF0907B 14512H mgf4316g MGFC45V2527 MGF1923 MGFC38V3642 MGF0904A PDF

    MGF4404A

    Abstract: MGF4302A MGF2430 MGF4304A MGF4403A 12GHz MGF4301A MGF4402A MGF4401A MGFK25M4045
    Text: - 154 - m f m « € m & m it V K V tè 5e X % I* V* E ft * (V) * * P d /P c h r} # (A) (W) GaAs N D -15 GDO -15 0 900m D MW PA GaAs N D -15 GDO -15 0 900m D 5 MGF2445 MW PA GaAs N D -15 GDO -15 0 1.4 D 10 MGF4301A MW LN A GaAs N D -4 GDO -4 0 60m D


    OCR Scan
    MGF2430 MGF2430A MGF2445 MGF4301A MGF4302A MGF4303A MGF4304A MGFC36V6471 MGFC36V7177 MGFC36V7785 MGF4404A MGF4403A 12GHz MGF4402A MGF4401A MGFK25M4045 PDF

    MGFC36V6471

    Abstract: MGFC36V5964 MGFC36V4450
    Text: A m it s u b is h i MGFC36VXXXX Packaged ELECTRONIC DEVICE GROUP FEATURES The MGFC36VXXXX products are internally impedance matched devices for use in C-band power amplifier applications. • Class A operation • Internally matched to 50£2 • High output power


    OCR Scan
    MGFC36VXXXX MGFC36VXXXX MGFC36V5258-01 MGFC36V5258-51 MGFC36V5964-01 MGFC36V5964-51 MGFC36V6471-01 MGFC36V6471-51 MGFC36V7177-01 MGFC36V7177-51 MGFC36V6471 MGFC36V5964 MGFC36V4450 PDF