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Mitsubishi Electric MGFC36V7785A-56
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Quest Components	MGFC36V7785A-56		28			1 $139.1528 10 $118.2799 100 $111.3222 1000 $111.3222 10000 $111.3222	Buy Now
Mitsubishi Electric MGFC36V7785A Electronic Component
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MGFC36V7785A Datasheets (3)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
MGFC36V7785A		Mitsubishi	7.7 ~ 8.5GHz BAND 4W INTERNALLY MATCHED GaAs FET		Original	PDF
MGFC36V7785A		Mitsubishi	7.7-8.5 GHz BAND 4W INTERNALLY MATCHED GaAs FET		Scan	PDF
MGFC36V7785AA		Mitsubishi	7.7 - 8.5GHz BAND 4W INTERNALLY MATCHED GaAs FET		Scan	PDF

MGFC36V7785A Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: < C band internally matched power GaAs FET > MGFC36V7785A 7.7 – 8.5 GHz BAND / 4W DESCRIPTION OUTLINE DRAWING The MGFC36V7785A is an internally impedance-matched GaAs power FET especially designed for use in 7.7 – 8.5 GHz band amplifiers. The hermetically sealed metal-ceramic	Original	MGFC36V7785A MGFC36V7785A -45dBc 25dBm	PDF
MGFC36V7785A Abstract: No abstract text available Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC36V7785A 7.7 ~ 8.5GHz BAND 4W INTERNALLY MATCHED GaAs FET . DESCRIPTION The MGFC36V7785A is an internally impedance-matched GaAs power FET especially designed for use in 7.7 ~ 8.5 GHz band amplifiers.The hermetically sealed metal-ceramic	Original	MGFC36V7785A MGFC36V7785A 25dBm 10MHz	PDF
MGFC36V7785A Abstract: No abstract text available Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC36V7785A 7.7 ~ 8.5GHz BAND 4W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC36V7785A is an internally impedance-matched GaAs power FET especially designed for use in 7.7 ~ 8.5 GHz band amplifiers.The hermetically sealed metalceramic package guarantees high reliability.	Original	MGFC36V7785A MGFC36V7785A 25dBm 10MHz June/2004	PDF
Untitled Abstract: No abstract text available Text: < C band internally matched power GaAs FET > MGFC36V7785A 7.7 – 8.5 GHz BAND / 4W DESCRIPTION OUTLINE DRAWING The MGFC36V7785A is an internally impedance-matched GaAs power FET especially designed for use in 7.7 – 8.5 GHz band amplifiers. The hermetically sealed metal-ceramic	Original	MGFC36V7785A MGFC36V7785A -45dBc 25dBm	PDF
C42V5964 Abstract: MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776 Text: Please Read “Notes” First! Contents Notes Contact Addresses MITSUBISHI ELECTRIC CORPORATION Contents Si Devices GaAs Devices Optical Devices Applications Quality Assurance and Reliability Testing Optical Modules Top Page © MITSUBISHI ELECTRIC CORPORATION	Original	M6STA-005VA/WA/SA MF-156STA-006VA/WA/SA MF-156SRA-002VA/WA/SA MF-622STA-004VA/WA/SA MF-622STA-005VA/WA/SA MF-622STA-006VA/WA/SA MF-622SRA-002VA/WA/SA MF-2500STA-002VA/WA, 003VA/WA, 004VA/WA C42V5964 MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776	PDF
BUZ90af Abstract: hv82 MGF4919G-01 MGF4919G MGF2407A-01 BUZ80AF1 6n60 MGF1302-15 SSP 50N06 2n10l Text: МИКРОСХЕМЫ 1 ПОЛЕВЫЕ ТРАНЗИСТОРЫ ИМПОРТНЫЕ Наименование 2SJ 103 2SJ 200 2SJ 306 2SJ 307 2SJ 449 2SJ 79 2SK 1023 2SK 1058 2SK 1060 2SK 107 2SK 1082 2SK 1102 2SK 1117 2SK 1118 2SK 1120 2SK 1162 2SK 118 2SK 1198	Original	O-251AA O-247AC O-220AB PowerSO-20 BUZ90af hv82 MGF4919G-01 MGF4919G MGF2407A-01 BUZ80AF1 6n60 MGF1302-15 SSP 50N06 2n10l	PDF
MGFC36V7785A Abstract: fet 30 f 124 Text: MITSUBISHI SEMICONDUCTOR <GaAs FET MGFC36V7785A * nfflSU^e ' 7.7~8.5GHz BAND 4W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING The MGFC36V7785A is an internally impedance-matched GaAs power FET especially designed for use in 7.7~8.5GHz band amplifiers. The	OCR Scan	FC36V7785A MGFC36V7785A 45dBc ltem-01 ltem-51 fet 30 f 124	PDF
Untitled Abstract: No abstract text available Text: MITSUBISHI SEMICONDUCTOR GaAs FET MG FC36V7785A 7.7-8.5GHZ BAND 4W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING The MGFC36V7785A is an internally impedance-matched GaAs power FET especially designed for use in 7.7~8.5GHz band amplifiers. The hermetically	OCR Scan	FC36V7785A MGFC36V7785A 45dBc	PDF
Untitled Abstract: No abstract text available Text: MITSUBISHI SEMICONDUCTOR <GaAs FET MGFC36V7785A S p"""*” 7.7~8.5GHz BAND 4W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING The MGFC36V7785A is an internally impedance-matched U n it : m illim eters inches) GaAs power FET especially designed for use in 7.7—8.5GHz	OCR Scan	MGFC36V7785A MGFC36V7785A	PDF
Untitled Abstract: No abstract text available Text: MITSUBISHI SEMICONDUCTOR <GaAs FET MGFC36V7785A , eh«*» ¡ptev^ 7.7~8.5GHz BAND 4W INTERNALLY MATCHED GaAs FET 5«n>e p3r3' DESCRIPTION The M G FC 36V7785A is an internally impedance-matched GaAs power FET especially designed fo r use in 7.7 ~ 8.5G H z	OCR Scan	MGFC36V7785A 36V7785A	PDF
mitsubishi f Abstract: No abstract text available Text: MITSUBISHI SEMICONDUCTOR GaAs FET MGFC36V7785A 7.7~8.5GHz BAND 4W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC36V7785A is an internally impedance-matched GaAs power FET especially designed "for use in 7.7~8.5GHz band amplifiers. The hermetically sealed	OCR Scan	MGFC36V7785A MGFC36V7785A --51D 45dBc Item-01 Item-51 mitsubishi f	PDF
3642G Abstract: No abstract text available Text: •GaAs FET SERIES FOR MICROWAVE-BAND MEDIUM AND HIGH POWER AMPLIFIERS CONTINUED , \Ta =25 C ) , Max. ratings Bias conditions frequancy Type No. HIGH F R E Q J E N C ' DEVICES vs r M GFC44V4450* « MGFC36V5258 MGFC39V5258 & MGFC40V5258 X. MGFC42V5258 MGFC36V5964A m	OCR Scan		PDF