Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    MGFS36E2325 Search Results

    MGFS36E2325 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MGFS36E2325 Mitsubishi 2.3-2.5GHz HBT HYBRID IC Original PDF

    MGFS36E2325 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    mitsubishi vcb

    Abstract: MGFS36E2325 16e-2005
    Text: MITSUBISHI SEMICONDUCTOR MGFS36E2325 2.3-2.5GHz HBT HYBRID IC Specifications are subject to change without notice. Outline Drawing DESCRIPTION 4.5 1.0 MGFS36E2325 is a GaAs RF amplifier designed for WiMAX CPE. 36E 2325 Lot No. FEATURES • • • • •


    Original     		PDF MGFS36E2325 MGFS36E2325 27dBm 50ohms IEEE802 16e-2005 350degC. January-2008 mitsubishi vcb 16e-2005

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR MGFS36E2325 2.3-2.5GHz HBT HYBRID IC Specifications are subject to change without notice. Outline Drawing DESCRIPTION 4.5 1.0 MGFS36E2325 is a GaAs RF amplifier designed for WiMAX CPE. 36E 2325 Lot No. FEATURES • • • • •


    Original     		PDF MGFS36E2325 MGFS36E2325 27dBm 50ohms IEEE802 16e-2005 -30degC 25degC 60degC

    mitsubishi Lot No

    Abstract: mitsubishi vcb
    Text: MITSUBISHI SEMICONDUCTOR MGFS36E2325 2.3-2.5GHz HBT HYBRID IC Specifications are subject to change without notice. Outline Drawing DESCRIPTION 4.5 1.0 MGFS36E2325 is GaAs RF amplifier designed for WiMAX CPE. 36E 2325 Lot No. FEATURES • • • • •


    Original     		PDF MGFS36E2325 MGFS36E2325 27dBm 50ohms IEEE802 16e-2005 350degC. November-2007 mitsubishi Lot No mitsubishi vcb

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR MGFS36E2325 2.3-2.5GHz HBT HYBRID IC Specifications are subject to change without notice. Outline Drawing DESCRIPTION 4.5 1.0 MGFS36E2325 is GaAs RF amplifier designed for WiMAX CPE. 36E 2325 Lot No. FEATURES • • • • •


    Original     		PDF MGFS36E2325 MGFS36E2325 27dBm 50ohms IEEE802 16e-2005 350degC. December-2007

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR MGFS36E2325 2.3-2.5GHz HBT HYBRID IC Specifications are subject to change without notice. Outline Drawing DESCRIPTION 4.5 1.0 MGFS36E2325 is GaAs RF amplifier designed for WiMAX CPE. 36E 2325 Lot No. FEATURES • • • • •


    Original     		PDF MGFS36E2325 MGFS36E2325 27dBm 50ohms IEEE802 16e-2005 350degC. September-2007