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    onsemi MGP11N60ED

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    Motorola Semiconductor Products MGP11N60ED

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    MGP11N60E Datasheets (11)

    Part ECAD Model Manufacturer Description Curated Type PDF
    MGP11N60E Motorola Insulated Gate Bipolar Transistor Original PDF
    MGP11N60E On Semiconductor Insulated Gate Bipolar Transistor N-Channel Original PDF
    MGP11N60E On Semiconductor Insulated Gate Bipolar Transistor Original PDF
    MGP11N60E/D Motorola IGBT IN TO-220 11 A Original PDF
    MGP11N60ED On Semiconductor TRANS IGBT CHIP N-CH 600V 15A 3TO-220AB Original PDF
    MGP11N60ED On Semiconductor Insulated Gate Bipolar Transistor N-Channel Original PDF
    MGP11N60E-D On Semiconductor Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate Original PDF
    MGP11N60ED/D Motorola IGBT IN TO-220 11 A Original PDF
    MGP11N60ED-D On Semiconductor Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate Original PDF
    MGP11N60EDG On Semiconductor TRANS IGBT CHIP N-CH 600V 15A 3TO-220AB Original PDF
    MGP11N60EG On Semiconductor TRANS IGBT CHIP N-CH 600V 15A 3TO-220AB Original PDF

    MGP11N60E Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MGP11N60E

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MGP11N60E/D SEMICONDUCTOR TECHNICAL DATA Designer's  Data Sheet MGP11N60E Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced termination scheme to provide an enhanced and reliable high


    Original     		PDF MGP11N60E/D MGP11N60E MGP11N60E

    MGP11N60ED

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MGP11N60ED/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode Designer's MGP11N60ED N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT is co–packaged


    Original     		PDF MGP11N60ED/D MGP11N60ED MGP11N60ED

    MGP11N60ED

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MGP11N60ED/D SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode MGP11N60ED N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT is co–packaged


    Original     		PDF MGP11N60ED/D MGP11N60ED MGP11N60ED

    MGP11N60E

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MGP11N60E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet MGP11N60E Designer's Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced termination scheme to provide an enhanced and reliable high


    Original     		PDF MGP11N60E/D MGP11N60E MGP11N60E

    MGP11N60E

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MGP11N60E/D SEMICONDUCTOR TECHNICAL DATA Designer's  Data Sheet MGP11N60E Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced termination scheme to provide an enhanced and reliable high


    Original     		PDF MGP11N60E/D MGP11N60E MGP11N60E

    MGP11N60E

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MGP11N60E/D SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet Insulated Gate Bipolar Transistor MGP11N60E N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced termination scheme to provide an enhanced and reliable high


    Original     		PDF MGP11N60E/D MGP11N60E MGP11N60E

    STR-G6551

    Abstract: STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312
    Text: Cross Reference, V1.0, Apr. 2002 Alphanumerical Cross Reference CoolMOSTM/IGBT/EmConTM/CoolSETTM Power Management & Supply N e v e r s t o p t h i n k i n g . Alphanumerical Cross Reference Revision History: 2002-04 V1.0 Previous Version: Page Subjects major changes since last revision


    Original     		PDF 2002-Sep. STR-G6551 STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312

    transistor marking code 12W SOT-23

    Abstract: MGB20N40CL laptop charging crb kp series stepper motor japan servo co 2n3773 power Amplifier circuit diagrams MJ2955 TRANSISTOR pwm brush dc motor controller sg3526 SG3526 boost controller for PWM fan tl494 tip122 tip127 mosfet audio amp
    Text: SG388/D Rev. 1, Aug-1999 ON Semiconductor PUBLICATION ORDERING INFORMATION USA/EUROPE Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5193, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada


    Original     		PDF SG388/D Aug-1999 r14153 transistor marking code 12W SOT-23 MGB20N40CL laptop charging crb kp series stepper motor japan servo co 2n3773 power Amplifier circuit diagrams MJ2955 TRANSISTOR pwm brush dc motor controller sg3526 SG3526 boost controller for PWM fan tl494 tip122 tip127 mosfet audio amp

    1N60E

    Abstract: N60E MGP11N60E
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL Order this document by MGPll N60m DATA DesignerSTM Data Sheet MGPI 1N60E insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced termination scheme to provide an enhanced and reliable high


    Original     		PDF 1N60E MGP11N60E 30H7G2140 WI-2447 MGP11N60UD 1N60E N60E MGP11N60E

    SSP35n03

    Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
    Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A


    Original     		PDF 5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent

    SGH80N60RUFD

    Abstract: bup314 equivalent bup314d SGH30N60UFD SGU06N60 BUP314 motorola diode cross reference mgy20n120d IXDH30N120AU1 SGP15N120
    Text: Infineon Technologies Cross Reference List Fast IGBT & DuoPack Company Product Name Fairchild * Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*)


    Original     		PDF SGR2N60UFD SGP10N60RUF SGP10N60RUFD SGH10N60RUFD SGW10N60RUFD SGP06N60 SKB10N60 BUP400D SGB15N60 SGH80N60RUFD bup314 equivalent bup314d SGH30N60UFD SGU06N60 BUP314 motorola diode cross reference mgy20n120d IXDH30N120AU1 SGP15N120

    HC08MP16

    Abstract: ac motor speed control circuit diagram with IGBT schematic diagram motor control using pwm module 1 HP SINGLE PHASE induction motor speed control using pwm inverter use igbt for 3 phase induction motor PWM generator for IGBT DC MOTOR SPEED CONTROL USING IGBT MGB20N40CL circuit diagram MC33153 12 volt dc to 220 volt ac inverter schematic
    Text: BR1480/D Silicon Solutions for Off Line Motor Drives • Application Specific MCU’s • Optoisolators • MOS Gate Drivers and Control IC’s • Discrete Insulated Gate Bipolar Transistors • Input Rectifiers • Hybrid IGBT Power Modules • High Voltage MOSFETS for Power Supply


    Original     		PDF BR1480/D K1TITC122/D K1TITC132/D HC08MP16 ac motor speed control circuit diagram with IGBT schematic diagram motor control using pwm module 1 HP SINGLE PHASE induction motor speed control using pwm inverter use igbt for 3 phase induction motor PWM generator for IGBT DC MOTOR SPEED CONTROL USING IGBT MGB20N40CL circuit diagram MC33153 12 volt dc to 220 volt ac inverter schematic

    tl4311

    Abstract: SOP23-5 2N4920 LM337B uc3842a uc3842b MGB20N40CLT4 sg3526 bc558b TO-266AA mje150
    Text: SG388CH/D 2000  4   2         SG388CH/D 2000  3   2  SCILLC,2000  © 1999 “” http://onsemi.com.cn         SCI LLC      ./012 !"#$%&'()*+,%?./14*+=* )NO @ A L M N O


    Original     		PDF SG388CH/D r14525 SG388CH/D tl4311 SOP23-5 2N4920 LM337B uc3842a uc3842b MGB20N40CLT4 sg3526 bc558b TO-266AA mje150

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet MGP11N60ED Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate IGBT & DIODE IN T0-220 11 A @ 90°C 15 A @ 25°C 600 VOLTS SHORT CIRCUIT RATED LOW ON-VOLTAGE


    OCR Scan     		PDF MGP11N60ED

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MGP11N60ED/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M G P11 N60ED In sulate d G ate Bipolar T ransistor w ith A n ti-P aralle l Diode N-Channel Enhancement-Mode Silicon Gate IGBT & DIODE IN T 0 -2 2 0 11 A @ 90°C


    OCR Scan     		PDF MGP11N60ED/D

    ignition IGBTS

    Abstract: 05n60 MHPM7B16A120B MHPM7B8A120A MHPM7A P15N MSH860 MGP7N60E
    Text: Chapter Four Data Sheets Table of Contents Page Page Motor Control IGBTs Power Modules MGP4N60E .4-2 MGP7N60E .4-6


    OCR Scan     		PDF MGP4N60E MGP7N60E MGP11N60E MGP14N60E MGP21N60E MGP11N60ED MGP2N60D MGS05N60D MGS13002D. 05N60D. ignition IGBTS 05n60 MHPM7B16A120B MHPM7B8A120A MHPM7A P15N MSH860 MGP7N60E

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA O rder this docum ent by M GP11N60E/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet M GP11N60E In sulate d G ate Bipolar T ransistor N-Channel Enhancement-Mode Silicon Gate T his Insulated G ate B ip olar T ra n sisto r IG BT uses an advanced


    OCR Scan     		PDF GP11N60E/D

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MGP11 N60ED/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet M G P 1 1 N 6 0 ED Insulated G ate Bipolar Transistor w ith A n ti-P arallel Diode N-Channel Enhancement-Mode Silicon Gate IGBT & DIODE IN T 0-2 20 11 A @ 90°C


    OCR Scan     		PDF MGP11 N60ED/D MGP11N60ED/D

    hall marking code A04

    Abstract: M143206EVK differences uc3842a uc3842b toshiba satellite laptop battery pinout 2N3773 audio amplifier diagram toshiba laptop battery pack pinout BC413 motorola transistor sj 5812 M68HC705X16 ABB inverter motor fault code
    Text: Introduction Advanced Digital r i Consumer Products L-l Microcomputer Components [2 Logic: Standard, Special p , and Programmable I-5* Analog and Interface Integrated Circuits Semiconductor r= Components Group L5 Product Literature and r~ Technical Training L”


    OCR Scan     		PDF 2PHX14226-31 hall marking code A04 M143206EVK differences uc3842a uc3842b toshiba satellite laptop battery pinout 2N3773 audio amplifier diagram toshiba laptop battery pack pinout BC413 motorola transistor sj 5812 M68HC705X16 ABB inverter motor fault code

    GP11N

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet M GP11N 6 0 E Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced termination scheme to provide an enhanced and reliable high


    OCR Scan     		PDF MGP11N60E GP11N