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    N60E Search Results

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    N60E Price and Stock

    PanJit Group PJMD360N60EC_L2_00001

    600V SUPER JUNCTION MOSFET
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    DigiKey PJMD360N60EC_L2_00001 Digi-Reel 5,985 1
    • 1 $3.96
    • 10 $2.597
    • 100 $3.96
    • 1000 $1.38867
    • 10000 $1.38867
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    PJMD360N60EC_L2_00001 Cut Tape 5,985 1
    • 1 $3.96
    • 10 $2.597
    • 100 $3.96
    • 1000 $1.38867
    • 10000 $1.38867
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    PJMD360N60EC_L2_00001 Reel 3,000 3,000
    • 1 -
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    • 10000 $0.75825
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    PanJit Group PJMP900N60EC_T0_00001

    600V SUPER JUNCTION MOSFET
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    DigiKey PJMP900N60EC_T0_00001 Tube 1,998 1
    • 1 $2.9
    • 10 $1.907
    • 100 $2.9
    • 1000 $2.9
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    PanJit Group PJMF120N60EC_T0_00001

    600V SUPER JUNCTION MOSFET
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    DigiKey PJMF120N60EC_T0_00001 Tube 1,997 1
    • 1 $8.04
    • 10 $5.469
    • 100 $8.04
    • 1000 $3.45188
    • 10000 $3.45188
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    PanJit Group PJMF900N60EC_T0_00001

    600V SUPER JUNCTION MOSFET
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    DigiKey PJMF900N60EC_T0_00001 Tube 1,986 1
    • 1 $3.38
    • 10 $2.223
    • 100 $3.38
    • 1000 $1.45644
    • 10000 $1.45644
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    onsemi FCPF380N60E

    MOSFET N-CH 600V 10.2A TO220F
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey FCPF380N60E Tube 1,945 1
    • 1 $3.65
    • 10 $2.387
    • 100 $3.65
    • 1000 $1.26801
    • 10000 $1.2445
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    Rochester Electronics FCPF380N60E 11 1
    • 1 $1.38
    • 10 $1.38
    • 100 $1.3
    • 1000 $1.17
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    Richardson RFPD FCPF380N60E 1,000
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    Flip Electronics FCPF380N60E 107,200
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    Master Electronics FCPF380N60E
    • 1 -
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    • 100 $2.02
    • 1000 $1.37
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    Wuhan P&S FCPF380N60E 122 1
    • 1 $3.48
    • 10 $3.48
    • 100 $2.22
    • 1000 $1.68
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    Find more N60E price and stock on Findchips.com

    N60E Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    N60E

    Abstract: MGW21N60ED MGW21 TME 86 T247
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL Order this document by N60ED/D DATA — Preliminary — lnsuiated Gate Bipolar Transistor Data Sheet MGW21 N60ED N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT is co–packaged with a soft recovery ultra-fast rectifier and uses an advanced


    Original     		MGW21N60ED/D MGW21 N60ED 140W41 24H609 N60ED/D N60E MGW21N60ED TME 86 T247 PDF

    Pi filter

    Abstract: CM1460-06DE CM1460-08DE N60E TDFN-12 CM1460 CM1460-04DE
    Text: Praetorian C-L-C LCD and Camera EMI FilterArray with ESD Protection CM1460 Features Product Description • The CM1460 is a family of pi-style EMI filter arrays with ESD protection, which integrates four, six and eight filters C-L-C in small form factor TDFN


    Original     		CM1460 CM1460 15pF-17nH-15pF. 350MHz 140Mbps 800MHz Pi filter CM1460-06DE CM1460-08DE N60E TDFN-12 CM1460-04DE PDF

    1N60E

    Abstract: N60E MGP11N60E
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL Order this document by MGPll N60m DATA DesignerSTM Data Sheet MGPI N60E insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced termination scheme to provide an enhanced and reliable high


    Original     		1N60E MGP11N60E 30H7G2140 WI-2447 MGP11N60UD 1N60E N60E MGP11N60E PDF

    triac mw 131 600d

    Abstract: 65n06
    Text: / 20 13 -2 01 4 Nell,your reliable green partner Europe North America China Taiwan ,Taipei Africa South America Oceania Evolving green Innovation and Future Worldwide Presence Headquarter TEL FAX E-Mail Nell semiconductor Taiwan,Taipei +886-2-26474181 +886-2-26429717


    Original     		PDF

    Pi filter

    Abstract: N60E california micro devices tdfn top marking TDFN-6 datasheet n60e CM1460 CM1460-04DE CM1460-06DE CM1460-08DE TDFN-12
    Text: CM1460 Praetorian L-C LCD and Camera EMI Filter Array with ESD Protection Features Product Description • California Micro Devices’ CM1460 is a family of pi-style EMI filter arrays with ESD protection, which integrates four, six and eight filters C-L-C in small form factor


    Original     		CM1460 CM1460 15pF-17nH-15pF. 350MHz 140Mbps 800MHz protec12 MO-229C Pi filter N60E california micro devices tdfn top marking TDFN-6 datasheet n60e CM1460-04DE CM1460-06DE CM1460-08DE TDFN-12 PDF

    14 pin mobile phone camera pinout

    Abstract: n60e WDFN-8 2x2
    Text: CM1460 Praetorian C-L-C LCD and Camera EMI Filter Array with ESD Protection Product Description The CM1460 is a family of pi−style EMI filter arrays with ESD protection, which integrates four, six and eight filters C−L−C) in small form factor WDFN 0.50 mm pitch packages. Each EMI filter


    Original     		CM1460 CM1460/D 14 pin mobile phone camera pinout n60e WDFN-8 2x2 PDF

    Untitled

    Abstract: No abstract text available
    Text: CM1460 Praetorian C-L-C LCD and Camera EMI Filter Array with ESD Protection Product Description The CM1460 is a family of pi−style EMI filter arrays with ESD protection, which integrates four, six and eight filters C−L−C) in small form factor WDFN 0.50 mm pitch packages. Each EMI filter


    Original     		CM1460 CM1460 CM1460â CM1460/D PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MGP11 N60ED/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet M G P 1 1 N 6 0 ED Insulated G ate Bipolar Transistor w ith A n ti-P arallel Diode N-Channel Enhancement-Mode Silicon Gate IGBT & DIODE IN T 0-2 20 11 A @ 90°C


    OCR Scan     		MGP11 N60ED/D MGP11N60ED/D PDF

    diode lt 238

    Abstract: 21N60ED
    Text: MOTOROLA Order this document by MGW21 N60ED/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet M G W 21N 60ED Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT is co-packaged with a soft recovery u ltra -fa s t rectifier and uses an advanced


    OCR Scan     		MGW21 N60ED/D MGW21N60ED/D diode lt 238 21N60ED PDF

    N60E

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MGP21 N60E/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet Insulated Gate Bipolar Transistor N60E N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced term ination schem e to provide an enhanced and reliable high


    OCR Scan     		MGP21 N60E/D MGP21N60ED N60E PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA O rder this docum ent by M G N60ED/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M G P11 N60ED Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate IGBT & DIODE IN T 0 -2 2 0 11 A @ 9 0 ° C


    OCR Scan     		P11N60ED/D N60ED PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by N60ED/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M G P11 N60ED In sulate d G ate Bipolar T ransistor w ith A n ti-P aralle l Diode N-Channel Enhancement-Mode Silicon Gate IGBT & DIODE IN T 0 -2 2 0 11 A @ 90°C


    OCR Scan     		MGP11N60ED/D PDF

    N60E

    Abstract: PHP10N60E T0220AB
    Text: Product specification Philips Semiconductors PowerMOS transistors N60E Avalanche energy FEATURES • • • • • SYMBOL QUICK REFERENCE DATA d Repetitive Avalanche Rated Fast switching Stable off-state characteristics


    OCR Scan     		PHP10N60E PHP10N60E T0220AB) T0220) N60E T0220AB PDF