MGSF3454XT1
Abstract: MGSF3454XT3
Text: MOTOROLA Order this document by MGSF3454XT1/D SEMICONDUCTOR TECHNICAL DATA MGSF3454XT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single N-Channel Field Effect Transistors Part of the GreenLine Portfolio of devices with energy–
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MGSF3454XT1/D
MGSF3454XT1
MGSF3454XT1
MGSF3454XT3
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BC517 spice model
Abstract: bc547 spice model bc548 spice model h1 m6c MPS6595 bc557 Spice Model BF245 A spice spice model bf199 BC640 SPICE model transistor motorola Selector Guide Plastic-Encapsulated Transistors GreenLineTM Portfolio Devices S
Text: Selector Guide 1 Plastic-Encapsulated Transistors 2 GreenLine Portfolio Devices 3 Small-Signal Field-Effect Transistors and MOSFETs 4 Small-Signal Tuning and Switching Diodes 5 Tape and Reel Specifications and Packaging Specifications 6 Surface Mount Information
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VN2410L
BC517 spice model
bc547 spice model
bc548 spice model
h1 m6c
MPS6595
bc557 Spice Model
BF245 A spice
spice model bf199
BC640 SPICE model
transistor motorola Selector Guide Plastic-Encapsulated Transistors GreenLineTM Portfolio Devices S
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MGSF3454XT1/D SEMICONDUCTOR TECHNICAL DATA TM M G S F3454X T 1 Preliminary Information M o to ro la P referred D e vic e Low rDS on Sm all-Signal MOSFETs TMOS Single N-Channel Field Effect Transistors IMkf hdT Part of the GreenLine™ P ortfolio of devices with e n e rg y conserving traits.
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OCR Scan
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MGSF3454XT1/D
F3454X
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Green Line' M G S F3454X T1 Preliminary Inform ation Motorola Preferred Device Low rDS on Sm all-S ignal MOSFETs TMOS Single N-Channel Field E ffect Transistors i Part of the GreenLine Portfolio of devices with energyconserving traits.
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F3454X
SF3454XT1
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Untitled
Abstract: No abstract text available
Text: MGSF3454XT1 Product Preview Low RDS on Small-Signal MOSFETs Single N-Channel Field Effect Transistors These miniature surface mount MOSFETs utilize the High Cell Density, HDTMOS process. Low RDS(on) assures minimal power loss and conserves energy, making this device ideal for use in small
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MGSF3454XT1
MGSF3454XT1/D
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BC237
Abstract: BC108 plastic
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MGSF3454XT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single N-Channel Field Effect Transistors N–CHANNEL ENHANCEMENT–MODE TMOS MOSFET rDS(on) = 50 mΩ (TYP) Part of the GreenLine Portfolio of devices with energy–
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MGSF3454XT1
T218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
BC237
BC108 plastic
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA G r e e n L i n e ' M G SF3454XT1 Prelim inary inform ation Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single N-Channel Field Effect Transistors N-CHANNEL ENHANCEMENT-MODE TMOS MOSFET rDS(on) = 50 mi 2 (TYP)
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SF3454XT1
MGSF3454XT1
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tsop6 marking 345
Abstract: MGSF3454XT1 MGSF3454XT3 marking tm tsop-6
Text: MOTOROLA Order this document by MGSF3454XT1/D SEMICONDUCTOR TECHNICAL DATA MGSF3454XT1 Preliminary Information Motorola Preferred Device Low rDS on Small−Signal MOSFETs TMOS Single N−Channel Field Effect Transistors N−CHANNEL ENHANCEMENT−MODE
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MGSF3454XT1/D
MGSF3454XT1
tsop6 marking 345
MGSF3454XT1
MGSF3454XT3
marking tm tsop-6
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transistor part number 2N2222A 338
Abstract: BC237 MARKING CODE diode sod123 W1 2N2222A 338 plastic package
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MGSF3454XT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single N-Channel Field Effect Transistors Part of the GreenLine Portfolio of devices with energy– conserving traits.
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Original
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MGSF3454XT1
T218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
transistor part number 2N2222A 338
BC237
MARKING CODE diode sod123 W1
2N2222A 338 plastic package
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