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    MGW40N60U

    Abstract: TO247AE
    Text: MOTOROLA SEMICONDUCTOR o TECHNICAL Order this document by MGW40N60UID DATA F Product Preview Data Sheet insulated Gate Bipolar mansistor N-Channel Enhancement Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced termination scheme to provide an enhanced and reliable high


    Original     		MGW40N60UID 340F43, O-247AE 14WI-2M7 K2-2M29298 2PHXM71M MGW40N60U/D MGW40N60U TO247AE PDF