Untitled
Abstract: No abstract text available
Text: 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 MJ16010 Designer's Data Sheet MJW16010 SWITCHMODE Series NPN Silicon Power Transistors MJ16012* These transistors are designed for high-voltage, high-speed, power switching in
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MJ16010
MJW16010
MJ16012*
MJ16012
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MJW16010
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MGW40N60U
Abstract: TO247AE
Text: MOTOROLA SEMICONDUCTOR o TECHNICAL Order this document by MGW40N60UID DATA F Product Preview Data Sheet insulated Gate Bipolar mansistor N-Channel Enhancement Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced termination scheme to provide an enhanced and reliable high
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MGW40N60UID
340F43,
O-247AE
14WI-2M7
K2-2M29298
2PHXM71M
MGW40N60U/D
MGW40N60U
TO247AE
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tme 126
Abstract: transistor TT 2442 MGW12N120D 3EML
Text: MOTOROLA SEMICONDUCTOR TECHNICAL Order this document by MGW12N120D/D DATA e Product Preview Data Sheet Insulated Gate BipoMar Transistor with Anti-Parallel Diode N-Channel Enhancement Mode Silicon Gate Ttis Insulated Gate Bipolar Transistor lGB~ is cqackaged
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MGW12N120D/D
MGW12N120DID
tme 126
transistor TT 2442
MGW12N120D
3EML
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schematic diagram atx Power supply 500w
Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455
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P462-ND
P463-ND
LNG295LFCP2U
LNG395MFTP5U
US2011)
schematic diagram atx Power supply 500w
pioneer PAL 012A
1000w inverter PURE SINE WAVE schematic diagram
600va numeric ups circuit diagrams
winbond bios 25064
TLE 9180 infineon
smsc MEC 1300 nu
TBE schematic diagram inverter 2000w
DK55
circuit diagram of luminous 600va UPS
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Untitled
Abstract: No abstract text available
Text: roducts., Una. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. MJ16110* MJW16110* Designer's Data Sheet NPN Silicon Power Transistors SWITCHMODE Bridge Series . . . specifically designed for use in half bridge and full bridge off line converters.
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MJW16110*
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TRANSISTOR BC 545
Abstract: amperes transistor BC 550 TRANSISTOR BC 530 transistor BC 338 transistor BC 2500 MOTOROLA N-Channel MOSFET AN569 MTW33N10E transistor Bc 287 MOTOROLA TRANSISTOR 726
Text: MOTOROLA Order this document by MTW33N10E/D SEMICONDUCTOR TECHNICAL DATA Data Sheet EĆFET. Designer's TMOS MTW33N10E Power Field Effect Transistor Motorola Preferred Device TOĆ247 with Isolated Mounting Hole N-Channel Enhancement-Mode Silicon Gate
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MTW33N10E/D
MTW33N10E
MTW33N10E/D*
TRANSISTOR BC 545
amperes transistor BC 550
TRANSISTOR BC 530
transistor BC 338
transistor BC 2500
MOTOROLA N-Channel MOSFET
AN569
MTW33N10E
transistor Bc 287
MOTOROLA TRANSISTOR 726
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transponder car key c4
Abstract: 3528 pwm 20 PINS ll4148 footprint LC1 D12 10 Immobilizer Base station immobilizer in car operation PG306001 car ignition circuit diagram immobilizer antenna CAR KEY CON16A
Text: HCS410 Evaluation Kit User’s Guide Information contained in this publication regarding device applications and the like is intended through suggestion only and may be superseded by updates. No representation or warranty is given and no liability is assumed by Microchip
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HCS410
DS51111A-
transponder car key c4
3528 pwm 20 PINS
ll4148 footprint
LC1 D12 10
Immobilizer Base station
immobilizer in car operation
PG306001
car ignition circuit diagram
immobilizer antenna CAR KEY
CON16A
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MGW12N120D/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M G W 12N 120D Insulated Gate Bipolar Transistor with Anti-Parallel Diode Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate IGBT & DIODE IN T O -2 4 7
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MGW20N 120/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M GW 20N120 In su late d G ate Bipolar T ransistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced
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MGW20N
120/D
20N120
MGW20N120/D
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TP12N10
Abstract: je210 MJF16206 desaturation design 1200 volt npn MJW16206 MPF930 MTP8P10 MUR8100E ex 3863
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M JW 16206 SCANSW ITCH NPN Bipolar Power Deflection Transistors For High and Very High Resolution CRT Monitors The MJF16206 and the MJW16206 are state-of-the-art SWITCHMODE bipolar power transistors. They are specifically designed for use in horizontal deflection
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MJW16206
MJF16206
AN1040.
TP12N10
je210
desaturation design
1200 volt npn
MPF930
MTP8P10
MUR8100E
ex 3863
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MJ16010
Abstract: bi 370 transistor MJ16012 ssf transistor MJ16012 MOTOROLA RSS2 IC 7403 2N6191 AM503 MJW16010
Text: MOTOROLA Order this document by MJ16010/D SEMICONDUCTOR TECHNICAL DATA M J16010 M JW 16010 D esigner’s Data Sheet SW ITCHM ODE S eries NPN S ilicon Pow er Transistors M J16012* These transistors are designed for high-voltage, high-speed, power switching in
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MJ16010/D
MJ16012
MJW16012
MJ16010
MJW16010
340F-03
O-247AE
bi 370 transistor
ssf transistor
MJ16012 MOTOROLA
RSS2
IC 7403
2N6191
AM503
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14N50E
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D e s ig n e r’s D ata S heet MTW14N50E TMOS E-FET ™ Power Field Effect Transistor TO -247 with Isolated Mounting Hole M o to ro la P re fe rre d D e v ic e TM O S PO W ER FET 14 A M P E R E S 5 0 0 VO LTS N-Channel Enhancement-Mode Silicon Gate
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14N50E
14N50E
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transistor rc 3866
Abstract: t 3866 power transistor t 3866 transistor equivalent transistor transistor 3866 s t 3866 transistor 3866 transistor c 3866 transistor transistor 3866 transistor t 3866 3866 power transistor
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M JP tM M IM M A IM M M F 1 M M l* aa M JI1M 04) • W f U M H w H M llD N I M P I M M U m M JM M M I SCANSWITCH NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors M JW 16212* The MJW16212 is a state-of-the-art SWITCHMODE™ bipolar power transistor. It
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AN1040.
transistor rc 3866
t 3866 power transistor
t 3866 transistor equivalent transistor
transistor 3866 s
t 3866 transistor
3866 transistor
c 3866 transistor
transistor 3866
transistor t 3866
3866 power transistor
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ex 3863
Abstract: MJf16206
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M JW 16206 SCANSWITCH NPN Bipolar Power Deflection Transistors For High and Very High Resolution CRT Monitors The MJF16206 and the MJW16206 are state-of-the-art SWITCHMODE bipolar power transistors. They are specifically designed for use In horizontal deflection
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MJF16206
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AN1040.
ex 3863
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16N40E
Abstract: high power pulse generator with mosfet mosfet 16n 15
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet M TW 16N 40E TMOS E-FET ™ Power Field Effect Transistor TO -247 w ith Isolated Mounting Hole Motorola Preferred Device TMOS POW ER FET 16 AMPERES 400 VOLTS RDS on = 0.24 OHM N-Channel Enhancement-Mode Silicon Gate
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MJF16206
Abstract: MTP12N10 pin configuration MJH16206 transistor D 1557 K1194 MJW16206 MPF930 TMJE210 ci mc7812 MC1391P
Text: MOTOROLA SC X S T R S / R F 4bE b3b7254 D 00^3470 3 T -3 2 > -O i IflOTb Order this data sheet by MJF16206/D MOTOROLA •i SEMICONDUCTOR m TECHNICAL DATA MJF16206 MJH16206 MJW16206 SCANSWITCH NPN Bipolar Power Deflection Transistors For High and Very High Resolution CRT Monitors
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b3b7254
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MJF16206/D
MJF16206
MJH16206
AN1040
MJF16206
MJH16206
MJW16206
MTP12N10 pin configuration
transistor D 1557
K1194
MPF930
TMJE210
ci mc7812
MC1391P
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MTW8N50E
Abstract: MOTOROLA N-Channel MOSFET motorola power FET
Text: MOTOROLA SC XSTRS/R F bflE D • b3b?SSH DG' I ßfi a? SSb ■ MOTb M OTOROLA ■i SEMICONDUCTOR TECHNICAL DATA Advance Information MTW8N50E TMOS E-FET Power Field Effect Transistor M otorola Preferred Device N-Channel Enhancem ent-Mode Silicon G ate
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12n120
Abstract: TO247AE
Text: MOTOROLA Order this document by MGW12N 120/D SEMICONDUCTOR TECHNICAL DATA Product Preview Data Sheet Insulated G ate Bipolar TVansistor MGW 12N120 N-Channel Enhancement Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced termination scheme to provide an enhanced and reliable high voltage
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MGW12N
120/D
MGW12N120/D
12n120
TO247AE
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MJ16110/D SEMICONDUCTOR TECHNICAL DATA M J16110* M JW 16110* D esigner’s Data Sheet NPN Silicon Power Transistors ‘ Motorola Preferred Device SWITCHMODE Bridge Series . . . specifically designed for use in half bridge and full bridge off line converters.
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MJ16110/D
J16110*
340F-03
O-247AE
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MGW12N120D/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet M G W 12N 120D In su late d G ate Bipolar T ransistor w ith A n ti-P aralle l Diode Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate IGBT & DIODE IN T O -2 4 7
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20N120
Abstract: No abstract text available
Text: MOTOROLA Order this document by MGW20N120/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet MGW 20 N 120 In su late d G ate Bipolar T ransistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate T his Insulated G ate B ip olar T ra n sisto r IG BT uses an advanced
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MGW20N120/D
20N120
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TMOS E-FET
Abstract: MTW6N60E
Text: MOTOROLA SC CXSTRS/R F bfl E ]> • b3b?254 QG^fiflBS GÖ3 « I I O T h M OTOROLA ■ SEMICONDUCTOR TECHNICAL DATA Advance Information M TW 6N 60E TMOS E-FET Power Field Effect Transistor Motorola Preferred Device N-Channel Enhancem ent-M ode Silicon G ate
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00A/ns)
TMOS E-FET
MTW6N60E
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30N60
Abstract: w30n60
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet MGW30N60 Insulated Gate Bipolar Transistor M otorola Preferred Device N-Channel Enhancement-Mode Silicon Gate This In su la ted G a te B ip o la r T ra n sisto r IG B T u ses an adva n ce d
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P6302
Abstract: transistor equivalent table TL 3849 AN952
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJW16010A* Designer’s Data Sheet *M otoroii P rtfe rrtd D avtc* NPN Silicon Power Transistors 1 kV SWITCHMODE Series These transistors are designed for high-voltage, high-speed, power switching in inductive circuits w here fall tim e is critica l. They are p a rticu la rly suited for
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MJW16010A*
AN951)
MUR105
MUR1100
MUR405
MUR4100
AR131)
P6302
transistor equivalent table
TL 3849
AN952
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