VRF2933FL
Abstract: VRF164FL ARF463AP1 Non - Isolated Buck, application DRF1301
Text: Power Products MICROSEMI POWER PORTFOLIOPortfolio 2014-2015 Power Products New image here TBD Power Semiconductors Power Modules RF Power MOSFETs Power Matters. About Microsemi Microsemi Corporation Nasdaq: MSCC offers a comprehensive portfolio of semiconductor and system
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MS5-001-14
VRF2933FL
VRF164FL
ARF463AP1
Non - Isolated Buck, application
DRF1301
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LE79Q2281
Abstract: 1N6761-1 2N2369AU 2N2907AUB BR17 datasheet transistor SI 6822 Dimming LED aplications Dimming LED Driver aplications GC4600 IC ZL70572
Text: Product Portfolio 2013-2014 ng-edge Embed Power Matters. About Microsemi Microsemi Corporation is a leading provider of semiconductor solutions differentiated by power, security, reliability and performance. The company concentrates on providing solutions for applications where power matters, security
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sot-227 footprint
Abstract: VRF2933 SP6-P ARF1511 DRF1200 APT35GP120JDQ2 ARF521 TO-247 smps welder inverter APTGT25DA120D1G
Text: Power Semiconductors Power Modules & RF Power MOSFETs 2006 Power Products Group 1 About Microsemi Microsemi Power Products Group was created in 2006 with the acquisition of Advanced Power Technology, Inc., a company at the forefront of power semiconductor technology since its founding in 1984.
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SP6-P
Abstract: N-channel MOSFET 800v 50a to-247 SMPS 1000w IGBT REFERENCE DESIGN DRF1400 45A, 1200v n-channel npt series igbt APTES80DA120C3G APT35DL120HJ semiconductors cross reference IGBT triple modules 100A 2000W mosfet power inverter
Text: Power Matters POWER PORTFOLIO 2011-2012 Power Semiconductors Power Modules RF Power MOSFETs Power Products Group About Microsemi Microsemi Power Products Group was created in 2006 with the acquisition of Advanced Power Technology, Inc., a company at the forefront of power semiconductor technology since its founding in 1984.
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10F-A,
SP6-P
N-channel MOSFET 800v 50a to-247
SMPS 1000w IGBT REFERENCE DESIGN
DRF1400
45A, 1200v n-channel npt series igbt
APTES80DA120C3G
APT35DL120HJ
semiconductors cross reference
IGBT triple modules 100A
2000W mosfet power inverter
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lm324 inverter sensing circuit
Abstract: CCFL INVERTER TRANSFORMERS Royer oscillator Notebook lcd inverter schematic 50khz resonant frequency Royer oscillator circuit diagram SGE2694-1 ccfl inverter schematic ccfl transformer buck royer inverter lcd
Text: Microsemi Application Note ANAN-13 LX1686 Direct Drive CCFL Inverter Design Reference George Henry Microsemi – Power Management Group L I N F I N I T Y Copyright 2000 Rev. 1.5, 9.01 D I V I S I O N AN-13 LX1686 Direct Drive CCFL Inverter Design Reference
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ANAN-13
LX1686
AN-13
lm324 inverter sensing circuit
CCFL INVERTER TRANSFORMERS
Royer oscillator
Notebook lcd inverter schematic
50khz resonant frequency
Royer oscillator circuit diagram
SGE2694-1
ccfl inverter schematic
ccfl transformer
buck royer inverter lcd
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smps 1000W
Abstract: 600V 300A igbt dc to dc boost converter SP6-P DRF1400 smps 500w half bridge DRF1300 1000w inverter MOSFET 1000W solar power inverter APT30GT60BRG 3000w inverter mosfet circuit
Text: 1 About Microsemi Microsemi Power Products Group was created in 2006 with the acquisition of Advanced Power Technology, Inc., a company at the forefront of power semiconductor technology since its founding in 1984. Our focus is on high voltage, high power and high performance applications. Our commitment is to maintain
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des691
10F-A,
smps 1000W
600V 300A igbt dc to dc boost converter
SP6-P
DRF1400
smps 500w half bridge
DRF1300
1000w inverter MOSFET
1000W solar power inverter
APT30GT60BRG
3000w inverter mosfet circuit
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UM9441 UM9442
Abstract: UMM5050 NKT 0039 HUM4020 NTE Semiconductor Technical Guide and Cross Refer wireless mobile charging through microwaves MSC 9415 hf power combiner broadband transformers mpd101 Structure rotary phase shifter
Text: Microsemi-Watertown THE PIN DIODE CIRCUIT DESIGNERS’ HANDBOOK The PIN Diode Circuit Designers’ Handbook was written for the Microwave and RF Design Engineer. Microsemi Corp. has radically changed the presentation of this PIN diode applications engineering material to increase its usefulness to Microwave and RF Circuit Designers. A major part of
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MPD-101A
UM9441 UM9442
UMM5050
NKT 0039
HUM4020
NTE Semiconductor Technical Guide and Cross Refer
wireless mobile charging through microwaves
MSC 9415
hf power combiner broadband transformers
mpd101
Structure rotary phase shifter
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UM9442
Abstract: UMM5050 MSC 9415 pin diodes radiation detector MSC 501 302 diode PIN DIODE DRIVER CIRCUITS "Microwave Diode" UM9441 Microwave PIN diode hf power combiner broadband transformers
Text: Microsemi-Watertown THE PIN DIODE CIRCUIT DESIGNERS’ HANDBOOK The PIN Diode Circuit Designers’ Handbook was written for the Microwave and RF Design Engineer. Microsemi Corp. has radically changed the presentation of this PIN diode applications engineering material to increase its usefulness to Microwave and RF Circuit Designers. A major part of
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MPD-101A
UM9442
UMM5050
MSC 9415
pin diodes radiation detector
MSC 501 302 diode
PIN DIODE DRIVER CIRCUITS
"Microwave Diode"
UM9441
Microwave PIN diode
hf power combiner broadband transformers
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SCR Crowbar
Abstract: crowbar thyristor 200A
Text: MicroNote Series 105 by Kent Walters and Mel Clark, Microsemi Scottsdale What is a Thyristor Surge Protective Device and How does it Work? Thyristor surge protective devices TSPDs are avalanche triggered components used to protect vulnerable circuits from moderate to
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1N5614US
Abstract: 1N5620US 1N5614 1N5616US 1N5618US 1N5622 1N5622US EIA-481-B 1N5616US JANTX
Text: 1N5614US thru 1N5622US VOIDLESS-HERMETICALLY-SEALED SURFACE MOUNT STANDARD RECOVERY GLASS RECTIFIERS SCOTTSDALE DIVISION APPEARANCE Package “A” or D-5A IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com FEATURES
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1N5614US
1N5622US
1N5614
1N5622
MILPRF-19500/427
1N5622)
1N5614US
1N5620US
1N5616US
1N5618US
1N5622US
EIA-481-B
1N5616US JANTX
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1N5614US
Abstract: 1N5614 1N5616US 1N5618US 1N5620US 1N5622 1N5622US EIA-481-B Microsemi micronote series 050
Text: 1N5614US thru 1N5622US VOIDLESS-HERMETICALLY-SEALED SURFACE MOUNT STANDARD RECOVERY GLASS RECTIFIERS SCOTTSDALE DIVISION APPEARANCE Package “A” or D-5A IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com FEATURES
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1N5614US
1N5622US
1N5614
1N5622
MILPRF-19500/427
1N5622)
1N5614US
SA7-45
1N5616US
1N5618US
1N5620US
1N5622US
EIA-481-B
Microsemi micronote series 050
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2N2369 avalanche
Abstract: Microsemi micronote series 050 Semiconductor Nuclear Radiation Detector DIODE ga101 pin diodes radiation detector UM9441 Microsemi Generic Diode nuclear radiation detector diode GA100 radiation ionizing dose TID detector
Text: Spring 1998 MicroNote Series 050 by Kent Walters, Microsemi Scottsdale Radiation Hardened Performance of Discrete Semiconductors Many system designs have required radiation hardness assurance for semiconductor products. In earlier years this primarily dealt with military
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zener
Abstract: zener diode JEDEC 1N 2 volt zener
Text: MicroNote Series 203 by Kent Walters, Microsemi Scottsdale Zener Voltage Regulation With Temperature Zener diodes are affected by temperature changes associated with their voltage temperature coefficient αvz . This characteristic αvz is usually included in the
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Untitled
Abstract: No abstract text available
Text: 1N5614US thru 1N5622US VOIDLESS-HERMETICALLY-SEALED SURFACE MOUNT STANDARD RECOVERY GLASS RECTIFIERS SCOTTSDALE DIVISION APPEARAN CE Package “A” or D-5A IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com FEAT U RES
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1N5614US
1N5622US
1N5614
1N5622
MILPRF-19500/427
1N5614US
SA7-45
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spice germanium diode
Abstract: 1n4000 DIODE 1N4000 silicon diodes pn junction diode germanium rectifier diode transient suppressor spice model MicroNote 1n4000 sERIES DIODES 1N4000 low leakage diodes spice
Text: Spring/Summer 1998 MicroNote Series 010 by Kent Walters, Microsemi Corporate Applications How to Quickly Obtain Spice Parameters for Diodes Component SPICE modeling has become a frequently used analysis tool by design engineers to evaluate circuit performance. This MicroNote
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Untitled
Abstract: No abstract text available
Text: LC6.5 thru LC170A, e3 1500 WATT LOW CAPACITANCE TRANSIENT VOLTAGE SUPPRESSOR SCOTTSDALE DIVISION APPEARANCE DO-13 DO-202AA IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com FEATURES • • • • • • •
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LC170A,
IEC61000-4-5
RTCA/DO-160D
IEC61000-4-2
IEC61000-4-4.
LC170A
DO-13
DO-202AA)
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BHB0002T
Abstract: BHB0004T BHB0006T BHB0008T BHB0010T
Text: MICROSEMI CORP/ R P M 31E D • b l l b O M O Q O O P O W i T ■ RPM T -2 S -0 7 5 -ss = r= b a m A R Q r M i n ■ " B■ 735 S. VINEWOOD ST. ESCONDIDO, CA 92025 619 432-6411 p/\X (619) 432-9385 A MICROSEMI c o m p a n y 25 AMP SILICON AVALANCHE RECTIFIERS
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BHB0002T
BHB0004T
BHB0006T
BHB0008T
BHB0010T
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ic 437
Abstract: JANTX1N5518B-1 STD 9308 jan1n5518bur-1
Text: Low Voltage Avalanche Zeners Part Number Microsemi Division Package Outline Type : 1N5518B D035 1N5519B (D035) 1N5520B (D035) 1N5521B (0035) 1N5522B (D035) 1N5523B (D035) 1N5S24B (D035) 1N5525B (D035) 1N5526B (D035) 1N5527B (D035) 1NS528B (D035) 1N5529B (D035)
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DO-35
ic 437
JANTX1N5518B-1
STD 9308
jan1n5518bur-1
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"electromagnetic pulse"
Abstract: No abstract text available
Text: WORKSHEET: Transient Voltage Suppressor Modules CUSTOM ASSEMBLY DESIGN INFORMATION FILL IN ONLY THE INFORMATION WHICH IS KNOWN OR APPLICABLE MICROSEMI USE ONLY REPRESENTATIVE (FIRM & INDIVIDUAL) DATE CUSTOMER ENGINEER STATE STREET TELEPHONE NUMBER A REA CODE
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OCR Scan
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ConditiD-704
MIL-STD-1275
MIL-STD-1399
"electromagnetic pulse"
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V627
Abstract: VE47 VE67 avalanche VE68 1000V controlled avalanche rectifiers 190215 VE28 VE108
Text: MICROSEMI CORP/ MICRO bllSÌO? Q001Q35 =1 • T-£L3-o5 Quality 1 Amp Epoxy Bridge Rectifiers ve Series Controlled Avalanche Series with 250V, 450V, 650V, and 850V Minimum Avalanche Ratings Non-controlled Avalanche Series with 25V, 50V, 100V, 200V, 400V, 600V, 800V, and 1000V VRRM Ratings
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Q001Q35
V627
VE47
VE67
avalanche
VE68
1000V controlled avalanche rectifiers
190215
VE28
VE108
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TS09100
Abstract: TS04700 TS05100 TS05600 TS0600 TS06200 TS06800 TS07100 TS07500 TS10000
Text: TS04700 thru T S 10000 lîîK^TM Microsemi Corp. ZENER DIODES FEATU RES • Low voltage avalanche zener diodes. • Considerably sharper breakdown than standard 4-10 v o lt zeners. • Suppressed field emission breakdown mechanism produces avalanche breakdown w ith sharpest knee available.
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TS04700
TS10000
DO-35
100mV
500mW.
100mA:
TS08200
TS08700
TS09100
TS04700
TS05100
TS05600
TS0600
TS06200
TS06800
TS07100
TS07500
TS10000
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V348
Abstract: v354 V342 V344 V346 V350 V351 V3510 V352 V356
Text: MICROSEMI CORP/ MICRO 5bE D • bllS'îG? 0Q0132S Q5b ■ MÛL / 7 0 1 -1 5 - MICRO QUALITY / SEMICONDUCTOR, INC 7^ 3^5 ^ ^ 3 Amp Diffused Silicon Epoxy Rectifiers with 200 Amp Peak Surge Rating Controlled Avalanche Types with 250V, 450V, 650V, and 850V Minimum Avalanche Ratings
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ZENER DIODE 437
Abstract: diode zener ZL 7 diode zener ZL 8
Text: 1N 5518 thru 1N 5546 Microsemi Corp. ' The dtode experts SCOTTSDALE, A l For more information call: 6(0 941-6300 ; LOW VOLTAGE AVALANCHE DIODES DO-35 FEATURES • LOW ZENER NOISE SPECIFIED • LOW ZENER IM PEDANCE • LOW LEAKAGE CURRENT • HERMETICALLY SEALED G LA SS PACKAGE
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1N551B-1
1N5546B-1
MIL-S-19500/437
DO-35
DD03fiD7
ZENER DIODE 437
diode zener ZL 7
diode zener ZL 8
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VE67
Abstract: ve47 AC/ve47
Text: MICROSEMI CORP/ MICRO EBR SbE T> • busso? 7 ^ 2 3 - OS MICRO QUALITY / 0001S-ÎS m 3 B M L SEMICONDUCTOR, INC 1 Amp Epoxy Bridge Rectifiers ve Series Controlled Avalanche Series with 250V, 450V, 650V, and 850V Minimum Avalanche Ratings Non-controlled Avalanche Series with 50V, 100V,
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0001S-Ã
VE108
VE67
ve47
AC/ve47
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