Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    MICROWAVE Search Results

    MICROWAVE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    ADL6010ACPZN-R7 Analog Devices Microwave Detector Visit Analog Devices Buy
    ADL6010ACPZN-R2 Analog Devices Microwave Detector Visit Analog Devices Buy
    ADL5721ACPZN-R7 Analog Devices Microwave HIR Visit Analog Devices Buy
    ADL6010SCPZN-R2 Analog Devices Microwave Detector Visit Analog Devices Buy
    ADL5723ACPZN-R7 Analog Devices Microwave HIR Visit Analog Devices Buy
    SF Impression Pixel

    MICROWAVE Price and Stock

    McGill Microwave Systems Ltd LMR-400-75-DB TIMES MICROWAVE

    LMR-400-75-DB Cable 100m Length
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey LMR-400-75-DB TIMES MICROWAVE 5 1
    • 1 $1155
    • 10 $1155
    • 100 $1155
    • 1000 $1155
    • 10000 $1155
    		Buy Now

    McGill Microwave Systems Ltd LMR 400 75 DB TIMES MICROWAVE

    LMR-400-75-DB Cable 500' Length
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey LMR 400 75 DB TIMES MICROWAVE 3 1
    • 1 $1760.22
    • 10 $1760.22
    • 100 $1760.22
    • 1000 $1760.22
    • 10000 $1760.22
    		Buy Now

    Kyocera AVX Components 530L104KT16T

    Silicon RF Capacitors / Thin Film 16V 0.1uF Tol 10%
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI 530L104KT16T Reel 98,000 500
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.37
    • 10000 $0.316
    		Buy Now

    Kyocera AVX Components 600L3R3AT200T/500

    Silicon RF Capacitors / Thin Film 200V 3.3pF Tol 0.05pF
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI 600L3R3AT200T/500 Reel 37,000 500
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.9
    • 10000 $0.63
    		Buy Now

    Kyocera AVX Components 600S101JT250XT

    Silicon RF Capacitors / Thin Film 250volts 100pF 5%
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI 600S101JT250XT Reel 36,000 500
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.536
    • 10000 $0.418
    		Buy Now
    Find more MICROWAVE price and stock on Findchips.com

    MICROWAVE Datasheets (500)

    Part ECAD Model Manufacturer Description Curated Type PDF
    10SF8181 Microwave & Video Systems SWITCH / FILTER BANK ASSEMBLY Original PDF
    1-750/200 Microwave Devices Standard Bandwidth Model Original PDF
    1N119 Microwave Diode Germanium Diodes Scan PDF
    1N120 Microwave Diode Germanium Diodes Scan PDF
    1N191 Microwave Diode Germanium Diodes Scan PDF
    1N192 Microwave Diode Germanium Diodes Scan PDF
    1N3831 Microwave Diode Silicon Planar Thyristor Diodes Scan PDF
    1N3831 Microwave Diode (1N3831 - 1N3846) Silicon Planar Thyristor Diodes Scan PDF
    1N3832 Microwave Diode Silicon Planar Thyristor Diodes Scan PDF
    1N3832 Microwave Diode (1N3831 - 1N3846) Silicon Planar Thyristor Diodes Scan PDF
    1N3833 Microwave Diode (1N3831 - 1N3846) Silicon Planar Thyristor Diodes Scan PDF
    1N3833 Microwave Diode Silicon Planar Thyristor Diodes Scan PDF
    1N3834 Microwave Diode Silicon Planar Thyristor Diodes Scan PDF
    1N3834 Microwave Diode (1N3831 - 1N3846) Silicon Planar Thyristor Diodes Scan PDF
    1N3835 Microwave Diode Silicon Planar Thyristor Diodes Scan PDF
    1N3835 Microwave Diode (1N3831 - 1N3846) Silicon Planar Thyristor Diodes Scan PDF
    1N3836 Microwave Diode Silicon Planar Thyristor Diodes Scan PDF
    1N3836 Microwave Diode (1N3831 - 1N3846) Silicon Planar Thyristor Diodes Scan PDF
    1N3837 Microwave Diode Silicon Planar Thyristor Diodes Scan PDF
    1N3837 Microwave Diode (1N3831 - 1N3846) Silicon Planar Thyristor Diodes Scan PDF
    ...

    MICROWAVE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TIM1414-4LA-371

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TECHNICAL DATA TIM1414-4LA-371 RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS Output Power at ldB Compression Point Linear Gain SYMBOL PldB Drain Current Power Added Efficiency 3rd Order Intermodulation


    OCR Scan     		PDF TIM1414-4LA-371 TIM1414-4LA-371

    Untitled

    Abstract: No abstract text available
    Text: DIRECTIONAL COUPLER .19 MAX IRAK MICROWAVE DIRECTIONAL COUPLER CPL / 1 0 B E - 0 8 SPECIFICATIONS: FREQUENCY LOSS COUPLING VSWR DIRECTIVITY POWER IN O- -O OUT TR4K MICROWAVE MATERIAL □ STANDARD □ SPECIAL • » o • BASE COVER MARKING FINISH FR— 4 VECTRA


    OCR Scan     		PDF PL/10B

    Untitled

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TOSHIBA TIM0910-15L MICROWAVE SEMICONDUCTOR TECHNICAL DATA Pinch-off Voltage Saturated Drain Current Gate-SourceBreakdown Voltage Thermal Resistance MIN. 41.0 TYP. 42.0 dB 6.0 7.0 MAX. — — A dB dBc -42 -45 A _ 4.5 5.5 TYP. 3000


    OCR Scan     		PDF TIM0910-15L 30dBm 145mA 2-11C1B)

    POUT315

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM5964-16SL-081 MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES • ■ LOW INTERMODULATION DISTORTION HIGH GAIN IM3=-45dBc a t Po=31.5dBm GldB=8.0dB at 5.9GHz to 6.4GHz Single C arrier Level BROAD BAND INTERNALLY MATCHED


    OCR Scan     		PDF -45dBc TIM5964-16SL-081 2-16G1B) POUT315

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM7179-4 Internally Matched Power GaAs FETs C-Band Features • High power - P1dB = 36.0 dBm at 7.1 GHz to 7.9 GHz • High gain - G 1dB = 6.5 dB at 7.1 GHz to 7.9 GHz • Broad band internally m atched • H erm etically sealed package


    OCR Scan     		PDF TIM7179-4 MW50970196 TIM7179-4

    TGF1350

    Abstract: No abstract text available
    Text: Texas Instruments TGF1350 Low-Noise Microwave GaAs FET Features • 1.5-dB noise figure with 11 -dB associated gain at 10 GHz ■ 2.2-dB noise figure with 7-dB associated gain at 18 GHz ■ All-gold metallization ■ Recessed 1/2-^m gate structure ■ Si3N4 channel passivation


    OCR Scan     		PDF TGF1350 TGF1350

    2SC1557

    Abstract: L39C cub vc 150
    Text: TOSHIBA {DISCRETE/OPTO} 9097250 TOSHIBA DISCRETE/OPTO tpwjimm/fmm L 39C 0 0 4 8 9 Ü T ^ 3 / '2 3 - -If O O VHP , L’HP^CATVffl ° Microwave High Power Amplifier Applications ° VHP, II HP Band CATV Applications MAXIMUM RATINGS (Ta =25°C) CHARACTERISE C


    OCR Scan     		PDF 2SC1557 2SC1557 L39C cub vc 150

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM5964-8SL High Efficiency and Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low interm odulation distortion - IM 3 = -4 5 d B c at Po = 2 8 .5 d B m , Single Carrier Level • High po w e r - PidB = 39-5 d B m at 5.9 G H z to 6.4 GHz


    OCR Scan     		PDF TIM5964-8SL TIM5964-8SL MW50750196

    Untitled

    Abstract: No abstract text available
    Text: Texas Instruments Microwave Military Components TGM8014 Carrier Plate Assembly Product Features • 0.6-watt average output power at 1-dB gain compression ■ 6 to 18 GHz bandwidth ■ Automated assembly ■ Selectable gate biasing ■ 100% RF screening Product Description


    OCR Scan     		PDF TGM8014 TGA8014

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM1414-4 Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 36.5 dBm at 14.0 GHz to 14.5 GHz • High gain - G1dB = 6.0 dB at 14.0 GHz to 14.5 GHz • Broadband internally matched • Hermetically sealed package


    OCR Scan     		PDF TIM1414-4 MW50280196

    Untitled

    Abstract: No abstract text available
    Text: TRKMS037 *T R K M S 0 3 7 * l/Q - .0 2 5 .18 MAX MODULATOR STYLE - 0 9 PACKAGE TRAK MICROWAVE l/Q SPECIFICATIONS MODULATOR LO FREQUENCY LO POWER LEVEL M IQ /3 F F - 0 9 C INSERTION LOSS l/Q l/Q RATE LEVEL 1.8 - 2 .0 GHz + 10 dBm MAX 10 dB MAX DC - 10 MHz


    OCR Scan     		PDF TRKMS037 /3FF--09C

    Untitled

    Abstract: No abstract text available
    Text: h- .5 0 -H .2 5 0 r 1 .075 — .19 7 .0 5 5 I F □ □ □ .031 — r Î •lo .38 I HIGH DYNAMIC RANGE DOUBLE BALANCED MIXER h-— -19 MAX —- - T .3 5 1 TRAK MICROWAVE RF MIXER $ M X R /3 C F -0 2 H D SPECIFICATIONS: IF OPERATING FREQUENCY


    OCR Scan     		PDF MXR/3CF-02HD

    Untitled

    Abstract: No abstract text available
    Text: u 1J POWER SPLITTER .19 MAX 7 1 TRAK MICROWAVE POWER SPLITTER .3 5 S P L /2 E F - 0 1 / 7 5 SPECIFICATIONS: FREQUENCY LOSS VSWR AMP BALANCE PHASE BALANCE ISOLATION POWER IMPEDANCE 5 0 0 - 2 0 0 0 MHz 0 .8 dB TYP, 2 .0 dB MAX 1.5:1 MAX ± 0 .1 dB TYP, ± 0 .3 dB MAX


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TPM1818-30 MICROWAVE POWER GaAs FET High Power GaAs FETs L, S-Band Features • High power • P-idB = 44.5 dBm at 1.8 GHz • High gain - G idB = 12 dB at 1.8 GHz • Partially matched type • Hermetically sealed package RF Performance Specifications (Ta = 25° C)


    OCR Scan     		PDF TPM1818-30 2-16G1B) MW40020196

    ely transformers

    Abstract: No abstract text available
    Text: Monolithic-Microwave Integrated Circuits BACKGROUND T l's M icrow ave Military Components M M C organization was created to produce Gallium Arsenide (GaAs) Monolithic M icrowave Integrated Circuits (M M ICs), and to integrate the broad range of technologies available at Texas Instruments.


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM7785-16SL PRELIMINARY High Efficiency and Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low interm odulation distortion - IM3 = -4 5 d B c at Po = 3 1 .5 d B m , Single Carrier Level • High po w e r


    OCR Scan     		PDF TIM7785-16SL MW51130196 TIM7785-16SL

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM5964-8A Internally Matched Power GaAs FETs C-Band Features • High power - P idB = 39.5 dBm at 5.9 GHz to 6.4 GHz • High gain - G 1dB = 8.0 dB at 5.9 GHz to 6.4 GHz • Broad band internally m atched • H erm etically sealed package


    OCR Scan     		PDF TIM5964-8A 2-11D1B) at260

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM1415-2 Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 33.5 dBm at 14.5 GHz to 15.0 GHz • High gain - G 1dB = 6.0 dB at 14.5 GHz to 15.0 GHz • Broad Band Internally M atched • H erm etically sealed package


    OCR Scan     		PDF TIM1415-2 MW50390196

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM7785-16 Internally Matched Power GaAs FETs C-Band Features • High power - P1dB = 42.5 dBm at 7.7 GHz to 8.5 GHz • High gain - G 1dB = 5.0 dB at 7.7 GHz to 8.5 GHz • Broad band internally m atched • H erm etically sealed package


    OCR Scan     		PDF TIM7785-16 TIM7785-16

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM7179-7L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low interm odulation distortion - IM3 = -43 d B c at Po = 28.5 dBm, - Single carrier level • High power - P1dB = 38.5 dBm at 7.1 GHz to 7.9 GHz


    OCR Scan     		PDF TIM7179-7L MW50980196

    Untitled

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TOSHIBA MICROWAVE SEMICONDUCTORS TECHNICAL DATA JS9P05-AS FEATURES: •H IG H POWER P1dB=28dBm ■C H IP FORM IHIGH GAIN GldB= f = 38GHz RF PERFORMANCE SPECIF CATIONS CHARACTERISTICS Output Power at 1dB Compression Point Power Gain at 1dB


    OCR Scan     		PDF 28dBm JS9P05-AS 38GHz

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM1011-5 Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 37.5 dBm at 10.7 GHz to 11.7 GHz • High gain - G-|dB = 7.0 dB at 10.7 GHz to 11.7 GHz • Broadband internally matched • Hermetically sealed package


    OCR Scan     		PDF TIM1011-5 MW50110196

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM1011-15L RF Performance Specifications Ta = 25°C Characteristic Symbol Output Power at 1 dB Compression Point P 1dB Power Gain at 1dB Compression Point G 1dB Condition Unit Min. Typ. Max. dBm 41.0 42.0 - dB 6.0 7.0 -


    OCR Scan     		PDF TIM1011-15L

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM1112-4 Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 36.5 dBm at 11.7 GHz to 12.7 GHz • High gain - G-|dB = 7.5 dB at 11.7 GHz to 12.7 GHz • Broadband internally matched • Hermetically sealed package


    OCR Scan     		PDF TIM1112-4 MW50190196