MICROWAVE TRANSISTOR S- PARAMETER Search Results

MICROWAVE TRANSISTOR S- PARAMETER Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

MICROWAVE TRANSISTOR S- PARAMETER Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
GE Transistor Manual Abstract: transistor k 316 35820 transistor circuit design Text: Microwave Transistor Bias Considerations Application Note 944-1 Introduction Often the least considered factor in microwave transistor circuit design is the bias network. Considerable effort is spent in measuring s-parameters, calculating gain, and optimizing	Original	PDF	5988-0424EN GE Transistor Manual transistor k 316 35820 transistor circuit design
GE Transistor Manual Abstract: cutler 35860 5988-0424EN transistor circuit transistor circuit design TRANSISTOR hFE-100 Text: Microwave Transistor Bias Considerations Application Note 944-1 Introduction Often the least considered factor in microwave transistor circuit design is the bias network. Considerable effort is spent in measuring s-parameters, calculating gain, and optimizing bandwidth and noise figure, while	Original	PDF	5988-0424EN GE Transistor Manual cutler 35860 transistor circuit transistor circuit design TRANSISTOR hFE-100
MMBTSC3356W Abstract: uhf Low Noise transistor Text: MMBTSC3356W NPN Silicon Epitaxial Planar Transistor for microwave low noise amplifier at VHF, UHF and CATV band. The transistor is subdivided into three groups, Q, R and S, according to its DC current gain. Absolute Maximum Ratings Ta = 25 OC Parameter Symbol	Original	PDF	MMBTSC3356W MMBTSC3356W uhf Low Noise transistor
MMBTSC3356W Abstract: No abstract text available Text: MMBTSC3356W NPN Silicon Epitaxial Planar Transistor for microwave low noise amplifier at VHF, UHF and CATV band. The transistor is subdivided into three groups, Q, R and S, according to its DC current gain. Absolute Maximum Ratings Ta = 25 OC Parameter Symbol	Original	PDF	MMBTSC3356W MMBTSC3356W
13MM Abstract: PH3134-2OL transistor f20 PH3134 Text: Radar Pulsed Power Transistor, 2OW, 300~s Pulse, 10% Duty PH3134-2OL 3.1 - 3.4 GHz Features NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry Diffused Emitter Ballasting Resistors	Original	PDF	PH3134-2OL 13MM PH3134-2OL transistor f20 PH3134
wacom Abstract: FI55 PH3134-55L lcfb RF NPN POWER TRANSISTOR 2.5 GHZ 340 a transistor Text: an AMP company Radar Pulsed Power Transistor, SW, 300~s Pulse, 10% Duty 3.1 - 3.4 GHz PH3134-55L Features NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Effkiency Interdigitated Geometty Diffused Emitter Ballasting Resistors	Original	PDF	PH3134-55L 73050257-1s wacom FI55 PH3134-55L lcfb RF NPN POWER TRANSISTOR 2.5 GHZ 340 a transistor
wacom Abstract: 3 w RF POWER TRANSISTOR 2.7 ghz PH2729-8SM Text: = = -E-= S‘,J =- = E .- -= = = r - an AMP company * Radar Pulsed Power Transistor, 8.5W, loops Pulse, 10% Duty PH2729-8SM 2.7 - 2.9 GHz v2.00 Features 903 22.86: NPM Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation	Original	PDF	PH2729-8SM Sii255-24-f wacom 3 w RF POWER TRANSISTOR 2.7 ghz PH2729-8SM
transistor j6 Abstract: J122 transistor J6 transistor transistor j122 j48 transistor transistor 1015 J122 J122 npn PH2731-75L PACIFIC 1015 Text: an = AMP wmDanv 5 = Radar Pulsed Power Transistor, 75W, 300~s Pulse, 10% Duty PI-f2731 -75L 2.7 - 3.1 GHz Features NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Effkiency Interdigitated Geometry Diffused Emitter Ballasting Resistors	Original	PDF	PI-f2731 PH2731-75L transistor j6 J122 transistor J6 transistor transistor j122 j48 transistor transistor 1015 J122 J122 npn PH2731-75L PACIFIC 1015
PH2729-65M Abstract: No abstract text available Text: z-z -,-= 2 .-= -= -= =c r s an AMP company * Radar Pulsed Power Transistor, 65W, loops Pulse, 10% Duty PH2729-65M 2.7 - 2.9 GHz I v2.00 .300 22.86 Features -:i~~~)-j ( NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation	Original	PDF	PH2729-65M Curren44) 2052-56X-02 PH2729-65M
1030 PULSED 32uS MODE-S Abstract: 700 v power transistor Text: PH1090-700B Avionics Pulsed Power Transistor—700 Watts, 1.03-1.09 GHz, 32µs Pulse, 2% Duty Features • • • • • • • • • Outline Drawing1 Designed for Mode-S IFF Applications NPN Silicon Microwave Power Transistor Common Base Configuration	Original	PDF	PH1090-700B Transistor--700 PH1090-700B 1030 PULSED 32uS MODE-S 700 v power transistor
BLS3135-20 Abstract: microwave transistor 03 SOT422A sot422 Text: DISCRETE SEMICONDUCTORS 0ÂTÂ Sin] H T BLS3135-20 Microwave power transistor Product specification Philips Sem iconductors 2000 Feb 01 PHILIPS Philips Semiconductors Product specification Microwave power transistor BLS3135-20 FEATURES PINNING - SOT422A • S uitable fo r short and m edium pulse applications	OCR Scan	PDF	BLS3135-20 OT422A BLS3135-20 microwave transistor 03 SOT422A sot422
transistor C 5611 Abstract: 35 micro-X Package MARKING CODE Q Text: S IE M E N S BFY450 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For Medium Power Amplifiers • Compression Point P-idB =19dBm 1.8 GHz Max. Available Gain G m a = l6dB at 1.8 GHz • Hermetically sealed microwave package	OCR Scan	PDF	BFY450 19dBm 25-Line Transistor25 QS9000 transistor C 5611 35 micro-X Package MARKING CODE Q
Transistor BFr 99 Abstract: Transistor BFR 96 transistor 2sc 548 Text: 2SC D .- . • . - , -„-,r— - . .» - - 1— — -. -■ ~. fl235bOS QQQMbbS 3 M S I E G T-V-fcJ NPN Silicon Microwave Transistor up to 2 GHz SIEMENS AKTIEN6ESELLSCHAF T -j-— BFR 14 C D ! BFR 14 C is an epitaxial NPN silicon planar microwave transistor in hermetically sealed	OCR Scan	PDF	fl235bOS Transistor BFr 99 Transistor BFR 96 transistor 2sc 548
ABE 422 Abstract: Transistor BFR 37 ABE 027 bfr14 BFR 98 ABE 604 Transistor BFr 99 ABE 721 Text: asc » • S23SbOS QOOHbS? T H S I E G { NPN Silicon Microwave Transistor up to 2 GHz SIEMENS AKTIENGESELLSCHAF BFR 14 B - - BFR 14 B is an epitaxial NPN silicon planar microwave transistor in hermetically sealed metal ceramic 100 mil package similar to TO 120. Because of its low noise figure, high	OCR Scan	PDF	pac54 23Sb05 BFR14B ABE 422 Transistor BFR 37 ABE 027 bfr14 BFR 98 ABE 604 Transistor BFr 99 ABE 721

BFQ60 Abstract: BI10-M30T-AP6X Q62702-F655 bfq 85 Siemens Microwave S12PS2 Text: 2SC D m fl23Sb05 QQQ4b43 T H S I E G — - — — • » « w r i u u _ Low Noise NPN Silicon Microwave Transistor BFQ 60 up to 2 GHz_T ?sr. D '7 ^ 3 / - < 3 3 _ SIEMENS AKTIENGESELLSCHAF BFQ 60 is a bipolar silicon NPN microwave transistor in hermetically sealed metal	OCR Scan	PDF	fl23Sb05 QQ04b43 -TZ3/-33_ Q62702-F655 fl23SbOS BFQ60 BFQ60 BI10-M30T-AP6X Q62702-F655 bfq 85 Siemens Microwave S12PS2
Transistor C G 774 6-1 Abstract: C G 774 6-1 a/Transistor C G 774 6-1 RLF100-11/12/Transistor C G 774 6-1 Text: 5SE D • A23StiGS dG04hlt. 7 ■ S IE G .* 7-^ Low Noise NPN Silicon Microwave Transistor BFQ 28 up to 4 GHz SIEMENS AKTIEN GESELLSCH AF _ BFQ 28 is a bipolar silicon NPN microwave transistor in hermetically sealed metal ceramic 100 mil package similar to TO 120. State-of-the-art manufacturing methods	OCR Scan	PDF	A23StiGS dG04hlt. Q62702-F527 235b05 000Mb22 BFQ28 Transistor C G 774 6-1 C G 774 6-1 a/Transistor C G 774 6-1 RLF100-11/12/Transistor C G 774 6-1
RF TRANSISTOR NPN MICRO-X Abstract: No abstract text available Text: S IE M E N S BFY405 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For Low Current Applications • For Oscillators up to 12 GHz • Noise Figure F = 1.15 dB at 1.8 GHz Outstanding Gms = 23dB at 1.8 GHz • Hermetically sealed microwave package	OCR Scan	PDF	BFY405 25-Line Transistor25 QS9000 RF TRANSISTOR NPN MICRO-X
bfr 547 Abstract: Transistor BFR 93 PS229 Transistor BFR 97 Transistor BFr 99 BFR14C Q62702-F543 S-12 Transistor BFR 96 Transistor BFR 39 Text: —— SSC D • - fl235bOS 0QQ4bfc>2 3 M S I E G NPN Silicon Microwave Transistor up to 2 GHz SIEMENS AKTIENGESELLSCHAF T BFR 14 C D ! BFR 14 C is an epitaxial NPN silicon planar microwave transistor in hermetically sealed metal ceramic 200 mil package similar to TO 120. It is outstanding for a low noise	OCR Scan	PDF	fl235bOS bfr 547 Transistor BFR 93 PS229 Transistor BFR 97 Transistor BFr 99 BFR14C Q62702-F543 S-12 Transistor BFR 96 Transistor BFR 39
Untitled Abstract: No abstract text available Text: S IE M E N S BFY405 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For Low Current Applications • For Oscillators up to 12 GHz • Noise Figure F = 1.15 dB at 1.8 GHz Outstanding Gms = 23dB at 1.8 GHz • Hermetically sealed microwave package	OCR Scan	PDF	BFY405 Transistor25 QS9000
Untitled Abstract: No abstract text available Text: S IE M E N S BFY420 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For High Gain Low Noise Amplifiers • For Oscillators up to 10 GHz • Noise Figure F = 1.1 dB at 1.8 GHz Outstanding Gms = 21 dB at 1.8 GHz • Hermetically sealed microwave package	OCR Scan	PDF	BFY420 Transistor25 QS9000
microwave transistor siemens Abstract: 35 micro-X Package MARKING CODE Q micro-X Package MARKING CODE C BFY420 S Text: S IE M E N S BFY420 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For High Gain Low Noise Amplifiers • For Oscillators up to 10 GHz • Noise Figure F = 1.1 dB at 1.8 GHz Outstanding Gms = 21 dB at 1.8 GHz • Hermetically sealed microwave package	OCR Scan	PDF	BFY420 25-Line Transistor25 QS9000 microwave transistor siemens 35 micro-X Package MARKING CODE Q micro-X Package MARKING CODE C BFY420 S
transistor NEC D 586 Abstract: sn 7441 ic nec 2701 Text: DATA SHEET SILICON TRANSISTOR 2SC5178 NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES • Low current consum ption and high gain \| S 2 i e \|2 = \| S 2 i e \|2 • 11.5 dB TYP. @ = 10.5 dB TYP. @ Vce =	OCR Scan	PDF	2SC5178 SC-61 2SC5178-T1 2SC5178-T2 transistor NEC D 586 sn 7441 ic nec 2701
NEL2001 Abstract: NEL2000 DB15F NEL2004 NEL2004F02-24 NEL2012 NEL2012F02-24 NEL2035 NEL2035F03-24 nec microwave Text: DATA SHEET SILICON POWER TRANSISTOR NEL2000 SERIES NPN SILICON EPITAXIAL TRANSISTOR L Band Power Amplifier DESCRIPTION AND APPLICATIONS NEL2000 series of NPN epitaxial microwave power transistors is designed for 1.8-2 GHz PHS/PC N/PC S base station applications.	OCR Scan	PDF	NEL2000 NEL200101-24 NEL2004F02-24 NEL2012F02-24 NEL2035F03-24 NEL2001 DB15F NEL2004 NEL2004F02-24 NEL2012 NEL2012F02-24 NEL2035 NEL2035F03-24 nec microwave
transistor f20 Abstract: No abstract text available Text: Aß Oscillator Power Transistor PH2022-1OSC 1 Watt, 2.00-2.20 GHz Outline Drawing Features • • • • • • • • NPN Silicon Microwave Power Transistor Common Emitter Configuration Designed for S-Band Applications Interdigitated Geometry Diffused Emitter Ballasting Resistors	OCR Scan	PDF	PH2022-1OSC transistor f20

MICROWAVE TRANSISTOR S- PARAMETER Search Results

MICROWAVE TRANSISTOR S- PARAMETER Result Highlights (5)

MICROWAVE TRANSISTOR S- PARAMETER Datasheets Context Search

GE Transistor Manual

GE Transistor Manual

MMBTSC3356W

MMBTSC3356W

13MM

wacom

wacom

transistor j6

PH2729-65M

1030 PULSED 32uS MODE-S

BLS3135-20

transistor C 5611

Transistor BFr 99

ABE 422

BFQ60

Transistor C G 774 6-1

RF TRANSISTOR NPN MICRO-X

bfr 547

Untitled

Untitled

microwave transistor siemens

transistor NEC D 586

NEL2001

transistor f20