varactor
Abstract: No abstract text available
Text: TUNING VARACTOR Selection guide TUNING VARACTOR Selection Guide SURFACE MOUNT SILICON ABRUPT TUNING VARACTOR HIGH Q SILICON ABRUPT JUNCTION TUNING VARACTOR - VBR = 30 V - VBR = 45 V SILICON HYPERABRUPT JUNCTION TUNING VARACTOR MICROWAVE SILICON HYPERABRUPT
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DH736
Abstract: DH737 DH735 varactor KU BAND F27D DH733 M208 EH736
Text: TUNING VARACTOR Microwave silicon hyperabrupt junction tuning varactor MICROWAVE SILICON HYPERABRUPT JUNCTION TUNING VARACTOR Description This series of silicon tuning varactors consists of hyperabrupt epitaxial devices. They incorporate a passivated mesa technology. Packaged or chip devices are available for linear electronic tuning up to
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EH733
EH734
EH735
EH736
EH737
EH738
DH733
DH734
DH735
DH736
DH737
varactor KU BAND
F27D
M208
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EH76150
Abstract: EH76150 die F27d x band varactor diode varactor KU BAND Dual Varactor Diode with Common Cathode DH76047-70 DH71030 varactor DH71067
Text: TUNING VARACTOR Selection guide TUNING VARACTOR Selection Guide PAGE SURFACE MOUNT SILICON ABRUPT TUNING VARACTOR 1-32 HIGH Q SILICON ABRUPT JUNCTION TUNING VARACTOR - VBR = 30 V 1-34 - VBR = 45 V 1-35 SILICON HYPERABRUPT JUNCTION TUNING VARACTOR 1-36 MICROWAVE SILICON HYPERABRUPT JUNCTION TUNING VARACTOR
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Ct1V/Ct12V
Ct1V/CT20V
EH76010
EH76015
EH76022
EH76033
EH76047
EH76068
EH76100
EH76150
EH76150
EH76150 die
F27d
x band varactor diode
varactor KU BAND
Dual Varactor Diode with Common Cathode
DH76047-70
DH71030
varactor
DH71067
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"Varactor Diodes"
Abstract: Varactor Diodes varactor low parasitic MPV2100 varactor diodes application MPV1965 varactor ghz
Text: MPV1965, MPV2100 MICROWAVE PRODUCTS DIVISION MONOLITHIC MICROWAVE SURFACE MOUNT VARACTOR DIODES PRODUCT PREVIEW This series of surface mount Varactor diodes utilize new and unique monolithic MMSM technology. The technology is a package/device integration accomplished at the wafer fabrication level. Since the cathode
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MPV1965,
MPV2100
12GHz.
MSC1598
"Varactor Diodes"
Varactor Diodes
varactor low parasitic
MPV2100
varactor diodes application
MPV1965
varactor ghz
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construction of varactor diode
Abstract: voltage controlled oscillator circuit with op amp oscillator circuit diagram in modulation techniques VT0-8060 motorola varactor varactor diode datasheet VTO-9000 varactor high power motorola rf book testing of varactor diode
Text: Voltage Controlled Oscillators The Hyperabrubt Varactor A hyperabrupt varactor diode differs from the conventional or abrupt varactor used in microwave oscillators in that the concentration of the N-type material in the depletion region is made non-uniform through
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VTO-9000
construction of varactor diode
voltage controlled oscillator circuit with op amp
oscillator circuit diagram in modulation techniques
VT0-8060
motorola varactor
varactor diode datasheet
VTO-9000
varactor high power
motorola rf book
testing of varactor diode
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Untitled
Abstract: No abstract text available
Text: TUNING VARACTOR High Q silicon abrupt junction tuning varactor HIGH Q SILICON ABRUPT JUNCTION TUNING VARACTOR VBR 30 V Description This series of high Q epi-junction microwave tuning varactors 30 V incorporates a passivated mesa technology. It is well suited for frequency tuning applications up to Ku band.
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CTO/CT30
DH72820
DH72999
BH141
BH142
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dh728
Abstract: DH71006 Tuning Varactors DH719 DH726 M208
Text: TUNING VARACTOR High Q silicon abrupt junction tuning varactor HIGH Q SILICON ABRUPT JUNCTION TUNING VARACTOR VBR 30 V Description This series of high Q epi-junction microwave tuning varactors 30 V incorporates a passivated mesa technology. It is well suited for frequency tuning applications up to Ku band.
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EH71004
EH71006
EH71008
EH71010
EH71012
EH71016
EH71020
EH71025
EH71030
EH71037
dh728
DH71006
Tuning Varactors
DH719
DH726
M208
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dh718
Abstract: M208 F27D BH157
Text: TUNING VARACTOR High Q silicon abrupt junction tuning varactor HIGH Q SILICON ABRUPT JUNCTION TUNING VARACTOR VBR 30 V Description This series of high Q epi-junction microwave tuning varactors 30 V incorporates a passivated mesa technology. It is well suited for frequency tuning applications up to Ku band.
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EH71004
EH71006
EH71008
EH71010
EH71012
EH71016
EH71020
EH71025
EH71030
EH71037
dh718
M208
F27D
BH157
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MV1403
Abstract: 210PF
Text: MV1403 TUNING VARACTOR DESCRIPTION: The ASI MV1403 is a Silicon Hyper-Abrupt Junction Microwave Tuning Varactor Diode. PACKAGE STYLE D0-204AA FEATURES: • High Capacitance: 140 – 210pF • High Q: 200 Min. Millimeters MAXIMUM RATINGS 12 V V I 250 mA PDISS
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MV1403
MV1403
D0-204AA
210pF
Ct-2/Ct-10
210PF
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mv1404
Abstract: No abstract text available
Text: MV1404 TUNING VARACTOR DESCRIPTION: The ASI MV1404 is a Silicon Hyper-Abrupt Junction Microwave Tuning Varactor Diode. PACKAGE STYLE D0-204AA FEATURES: • High Capacitance: 90 – 144pF • High Q: 200 Min. Millimeters MAXIMUM RATINGS 12 V V I 250 mA PDISS
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MV1404
MV1404
D0-204AA
144pF
Ct-2/Ct-10
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KV1911A
Abstract: KV1921A KV1931A KV1941A KV1951A KV1961A KV1971A KV1981A KV1991A varactor KU BAND
Text: TOC UHF-MICROWAVE SUPER HYPERABRUPT JUNCTION VARACTOR DIODES DESCRIPTION APPLICATIONS The KV 1900 series of super hyperabrupt varactor diodes combines low voltage with high ratio tuning. They feature grown junction mesa technology for the highest Q commercially available. Passivation is our dense mil
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KV1911A
KV1951A
KV1921A
KV1931A
KV1941A
KV1961A
KV1971A
KV1981A
KV1991A
KV1911A
KV1921A
KV1931A
KV1941A
KV1951A
KV1961A
KV1971A
KV1981A
KV1991A
varactor KU BAND
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symbol of varactor diode and equivalent circuit
Abstract: MV1403 "Tuning Varactor"
Text: MV1403 TUNING VARACTOR DESCRIPTION: The ASI MV1403 is a Silicon Hyper-Abrupt Junction Microwave Tuning Varactor Diode. PACKAGE STYLE D0-204AA FEATURES: • High Capacitance: 140 – 210pF • High Q: 200 Min. Millimeters Dim: A B D F K MAXIMUM RATINGS I 12 V
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MV1403
MV1403
D0-204AA
210pF
TYP125
Ct-2/Ct-10
symbol of varactor diode and equivalent circuit
"Tuning Varactor"
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MV1404
Abstract: varactor diode
Text: MV1404 TUNING VARACTOR DESCRIPTION: The ASI MV1404 is a Silicon Hyper-Abrupt Junction Microwave Tuning Varactor Diode. PACKAGE STYLE D0-204AA FEATURES: • High Capacitance: 90 – 144pF • High Q: 200 Min. Millimeters Dim: A B D F K MAXIMUM RATINGS I 12 V
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MV1404
MV1404
D0-204AA
144pF
Ct-2/Ct-10
varactor diode
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KV1951A
Abstract: KV1900 KV1911A KV1921A KV1931A KV1941A KV1961A KV1971A KV1991A maximum current rating of diodes
Text: KV1911A – KV1991A VARACTOR DIODES UHF Microwave Super-Hyperabrupt Junction TM RoHS Compliant KEY FEATURES The KV1900 series of Super Hyperabrupt Varactor diodes combines low voltage with high ratio tuning. They feature grown junction mesa technology for the highest Q commercially available. Passivation is our
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KV1911A
KV1991A
KV1900
KV1941A
KV1971A
KV1951A
KV1911A
KV1921A
KV1931A
KV1941A
KV1961A
KV1971A
KV1991A
maximum current rating of diodes
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CT10
Abstract: DKV6516
Text: DKV6516 TUNING VARACTOR DESCRIPTION: PACKAGE STYLE D0-204AA The DKV6516 is a Silicon HyperAbrupt Junction Microwave Tuning Varactor Diode. MAXIMUM RATINGS VR 12 V IF 40 mA PDISS 200 mW @ TA = 25 OC TJ -55 OC to +125 OC T STG -55 OC to +175 OC Millimeters Min
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DKV6516
D0-204AA
DKV6516
CT2/CT10
CT10
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MV1404H
Abstract: No abstract text available
Text: MV1404H TUNING VARACTOR DESCRIPTION: The ASI MV1404H is a Silicon Hyper-Abrupt Junction Microwave Tuning Varactor Diode, With Hi-Rel Screening. PACKAGE STYLE D0-7 MAXIMUM RATINGS I 12 A V 250 A PDISS 400 mW @ TA = 25 C TJ -65 C to +175 C TSTG -65 C to +200 C
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MV1404H
MV1404H
Ct-2/Ct-10
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Varactor SPICE Models for RF VCO Applications
Abstract: 200315B symbol of varactor diode and equivalent circuit varactor diode SPICE model equivalent circuit diagram of varactor diode varactor spice varactor diode spice model transit time extraction varactor diode notes SMV1235-011 varactor ghz
Text: APPLICATION NOTE Varactor SPICE Models for RF VCO Applications The varactor SPICE model described in this Application Note is useful for RF Voltage Controlled Oscillator VCO applications. However, the model neglects some parasitic components often needed for high frequency microwave applications, such as the
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200315B
Varactor SPICE Models for RF VCO Applications
200315B
symbol of varactor diode and equivalent circuit
varactor diode SPICE model
equivalent circuit diagram of varactor diode
varactor spice
varactor diode spice model transit time extraction
varactor diode notes
SMV1235-011
varactor ghz
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1N5140A
Abstract: microwave varactor diode
Text: 1N5140A TUNING VARACTOR DIODE DESCRIPTION: PACKAGE STYLE D0-204AA The 1N5140A is a Silicon Abrupt Junction Microwave Tuning Varactor Diode. Dim: A B D F K MAXIMUM RATINGS IF 250 mA VR 60 V PDISS 400 mW @ TA = 25 C TJ -65 C to +175 C TSTG -65 C to +200 C Millimeters
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1N5140A
D0-204AA
1N5140A
CT4/CT60
microwave varactor diode
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Untitled
Abstract: No abstract text available
Text: 1N5140A asi TUNING VARACTOR DIODE DESCRIPTION: The 1N5140A is a Silicon Abrupt Junction Microwave Tuning Varactor Diode. PACKAGE STYLE D0-204AA Millimeters Inches Dim: Min Max Min Max A 5.84 7.62 0.230 0.300 250 mA B 2.16 2.72 0.085 0.107 D 0.46 0.56 0.018
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1N5140A
1N5140A
D0-204AA
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Untitled
Abstract: No abstract text available
Text: 1N5140A asii TUNING VARACTOR DIODE DESCRIPTION: The 1N5140A is a Silicon Abrupt Junction Microwave Tuning Varactor Diode. PACKAGE STYLE D0-204AA Millimeters Inches Dim: Min Max Min Max A 5.84 7.62 0.230 0.300 250 mA B 2.16 2.72 0.085 0.107 D 0.56 0.018 0.022
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1N5140A
1N5140A
D0-204AA
CT4/CT60
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ml4318
Abstract: ML4339 ml4351 ML4338 ML4343
Text: ML 4000 SERIES CERAMIC PACKAGED SILICON TUNING VARACTOR DIODES The ML 4300 Series of silicon microwave tuning varactor diodes has been designed to obtain the highest Q possible. Each device in this series has a high density silicon dioxide passivation which results in exceptionally low leakage
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20GHz.
ML4310
ML4311
ML4312
ML4313
ML4314
ML4315
ML4316
ML4317
ML4318
ML4339
ml4351
ML4338
ML4343
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Untitled
Abstract: No abstract text available
Text: 1N5148A asi TUNING VARACTOR DIODE DESCRIPTION: The 1N5148A is a Silicon Abrupt Junction Microwave Tuning Varactor Diode. PACKAGE STYLE D0-204AA Millimeters MAXIMUM RATINGS 250 mA If Vr 60 V P diss 400 mW @ TA = 25 °C Tj -65 °C t o +175 °C T stg -65 °C to +200 °C
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1N5148A
1N5148A
D0-204AA
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Untitled
Abstract: No abstract text available
Text: 1TE D • 4bli3303 0 0 00 3 1 3 Beam Lead Varactor Diodes SECTION 4 MILLIMETER-WAVE DIODES HUGHES/ MICROWAVE PRDTS The Hughes model 47401H-0101 beam-lead varactor is a ; GaAs Schottky-barrier device which features a rugged : beam-lead structure that provides lead pull-strengths of 10 g
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4bli3303
47401H-0101
47401H-0101
-2V/-20V,
47401H-0000
47406H-0000
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Untitled
Abstract: No abstract text available
Text: 1N5142 asi TUNING VARACTOR DIODE DESCRIPTION: The 1N5142 is a Silicon HyperAbrupt Junction Microwave Tuning Varactor Diode. PACKAGE STYLE D0-204AA -nrB MAXIMUM RATINGS - 250 mA If Vr 60 V P diss 400 mW @ TA = 25 °C Tj -65 °C t o +175 °C T stg -65 °C to +200 °C
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1N5142
1N5142
D0-204AA
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