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    MINI BALL CORNER Search Results

    MINI BALL CORNER Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CS-SASMINIHD2-002 Amphenol Cables on Demand Amphenol CS-SASMINIHD2-002 2m (6.6') External 4x HD Mini-SAS Cable - 4x Mini-SAS HD (SFF-8644) to 4x Mini-SAS HD (SFF-8644) Passive Copper Cable [28 AWG] - 12G SAS 3.0 / iPass+™ HD Datasheet
    CS-SASMINIHD2-003 Amphenol Cables on Demand Amphenol CS-SASMINIHD2-003 3m (9.8') External 4x HD Mini-SAS Cable - 4x Mini-SAS HD (SFF-8644) to 4x Mini-SAS HD (SFF-8644) Passive Copper Cable [28 AWG] - 12G SAS 3.0 / iPass+™ HD Datasheet
    CS-SASMINIHD2-001 Amphenol Cables on Demand Amphenol CS-SASMINIHD2-001 1m (3.3') External 4x HD Mini-SAS Cable - 4x Mini-SAS HD (SFF-8644) to 4x Mini-SAS HD (SFF-8644) Passive Copper Cable [30 AWG] - 12G SAS 3.0 / iPass+™ HD Datasheet
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    MINI BALL CORNER Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    BGA-56 DATASHEET

    Abstract: mini ball corner PQFP die size cpga dimensions BGA-64 pad atmel 0945 PQFP 132 PACKAGE DIMENSION
    Text: pkg-3.7-04/99 Packaging Introduction . 4-3 Package Options: Table . 4-3


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: A64S0616 1M X 16 Bit Low Voltage Super RAMTM Preliminary Document Title 1M X 16 Bit Low Voltage Super RAMTM Revision History History Issue Date Remark 0.0 Initial issue November 30, 2001 Preliminary 0.1 Add tASC, tAHC, tCEH, tWEH July 31, 2002 0.2 Change VCCmax from 3.1V to 3.3V


    Original     		A64S0616 MO192 PDF

    Untitled

    Abstract: No abstract text available
    Text: A64S9316A Preliminary 512K X 16 Bit Low Voltage Super RAM Document Title 512K X 16 Bit Low Voltage Super RAM Revision History Rev. No. 0.0 PRELIMINARY History Issue Date Remark Initial issue November 30, 2004 Preliminary November, 2004, Version 0.0 AMIC Technology, Corp.


    Original     		A64S9316A 48-ball A64S9316A MO192 PDF

    A12C

    Abstract: A14C A15C CY62127V
    Text: CY62127V V CYPRESS 64K x 16 Static RAM Writing to the device is accomplished by taking Chip Enable CE and Write Enable (WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins (l/0-| through l/0 8), is written into the location specified on the address pins (Aq


    OCR Scan     		CY62127V 44-pin CY62127V A12C A14C A15C PDF

    A64S0616

    Abstract: A64S0616G-55 A64S0616G-70
    Text: A64S0616 1M X 16 Bit Low Voltage Super RAMTM Preliminary Document Title 1M X 16 Bit Low Voltage Super RAMTM Revision History Rev. No. History Issue Date Remark Preliminary 0.0 Initial issue November 30, 2001 0.1 Add tASC, tAHC, tCEH, tWEH July 31, 2002 0.2


    Original     		A64S0616 MO192 A64S0616 A64S0616G-55 A64S0616G-70 PDF

    SD card CARD PCB FOOTPRINT

    Abstract: micro sd Micro SD chip BGF117 IEC610004-2 microsd microSD application note MICRO SD card footprint PCB microsd specification WLP 35 SAFETY
    Text: Data Sheet, V2.0, January 2010 BGF117 High-Speed Mini-/Micro-SD Card ESD Protection and EMI Filter RF & Protection Devices Edition 2010-01-15 Published by Infineon Technologies AG 81726 München, Germany Infineon Technologies AG 2010. All Rights Reserved.


    Original     		BGF117 WLP-16-4-N-PO WLP-16-4 WLP-16-4-N-FP WLP-16-4-N-TP BGF117 SD card CARD PCB FOOTPRINT micro sd Micro SD chip IEC610004-2 microsd microSD application note MICRO SD card footprint PCB microsd specification WLP 35 SAFETY PDF

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet, V2.0, January 2010 BGF117 High-Speed Mini-/Micro-SD Card ESD Protection and EMI Filter RF & Protection Devices Edition 2010-01-15 Published by Infineon Technologies AG 81726 München, Germany Infineon Technologies AG 2010. All Rights Reserved.


    Original     		BGF117 WLP-16-4-N-PO WLP-16-4 WLP-16-4-N-FP WLP-16-4-N-TP BGF117 PDF

    A64S0616

    Abstract: A64S0616G-70 A64S0616G-85
    Text: A64S0616 1M X 16 Bit Low Voltage Super RAMTM Preliminary Document Title 1M X 16 Bit Low Voltage Super RAMTM Revision History Rev. No. History Issue Date Remark Preliminary 0.0 Initial issue November 30, 2001 0.1 Add tASC, tAHC, tCEH, tWEH July 31, 2002 0.2


    Original     		A64S0616 MO192 A64S0616 A64S0616G-70 A64S0616G-85 PDF

    A64S9316

    Abstract: A64S9316G-70
    Text: A64S9316 512K X 16 Bit Low Voltage Super RAMTM Preliminary Document Title 512K X 16 Bit Low Voltage Super RAMTM Revision History Rev. No. History Issue Date Remark Preliminary 0.0 Initial issue May 16, 2002 0.1 Add tASC, tAHC, tCEH, tWEH July 31, 2002 0.2


    Original     		A64S9316 MO192 A64S9316 A64S9316G-70 PDF

    0.3mm pitch BGA

    Abstract: A64S0616 A64S0616G-70 A64S0616G-85
    Text: A64S0616 1M X 16 Bit Low Voltage Super RAMTM Preliminary Document Title 1M X 16 Bit Low Voltage Super RAMTM Revision History Rev. No. History Issue Date Remark Preliminary 0.0 Initial issue November 30, 2001 0.1 Add tASC, tAHC, tCEH, tWEH July 31, 2002 0.2


    Original     		A64S0616 MO192 0.3mm pitch BGA A64S0616 A64S0616G-70 A64S0616G-85 PDF

    A64S9316

    Abstract: A64S9316G-70
    Text: A64S9316 512K X 16 Bit Low Voltage Super RAMTM Preliminary Document Title 512K X 16 Bit Low Voltage Super RAMTM Revision History Rev. No. History Issue Date Remark Preliminary 0.0 Initial issue May 16, 2002 0.1 Add tASC, tAHC, tCEH, tWEH July 31, 2002 0.2


    Original     		A64S9316 MO192 A64S9316 A64S9316G-70 PDF

    A64E06161

    Abstract: A64E06161G A19 SMD
    Text: A64E06161 Preliminary 1M X 16 Bit Low Voltage Super RAM Document Title 1M X 16 Bit Low Voltage Super RAM Revision History History Issue Date Remark 0.0 Initial issue October 12, 2003 Preliminary 0.1 Change VCC range and VCCQ range November 30, 2004 Rev. No.


    Original     		A64E06161 100uA MO192 A64E06161 A64E06161G A19 SMD PDF

    Untitled

    Abstract: No abstract text available
    Text: A64E06161 Preliminary 1M X 16 Bit Low Voltage Super RAM Document Title 1M X 16 Bit Low Voltage Super RAM Revision History Rev. No. 0.0 PRELIMINARY History Issue Date Remark Initial issue October 12, 2003 Preliminary October, 2003, Version 0.0 AMIC Technology, Corp.


    Original     		A64E06161 48-ball MO192 PDF

    Untitled

    Abstract: No abstract text available
    Text: A64S0616A Preliminary 1M X 16 Bit Low Voltage Super RAM Document Title 1M X 16 Bit Low Voltage Super RAM Revision History Rev. No. 0.0 PRELIMINARY History Issue Date Remark Initial issue February 18, 2005 Preliminary February, 2005, Version 0.0 AMIC Technology, Corp.


    Original     		A64S0616A 48-ball MO192 PDF

    Untitled

    Abstract: No abstract text available
    Text: Hipac High performance passive and actives on chip BGF149 High-Speed Mini-/Micro-SD Card ESD Protection and EMI Filter Datasheet Rev. 1.3, 2012-06-20 Final Power Management & Multimarket Edition 2012-06-20 Published by Infineon Technologies AG 81726 Munich, Germany


    Original     		BGF149 PDF

    BGF149

    Abstract: N0771 trimble R6 sirius D4 WLP15
    Text: Hipac High performance passive and actives on chip BGF149 High-Speed Mini-/Micro-SD Card ESD Protection and EMI Filter Datasheet Rev. 1.3, 2012-06-20 Final Power Management & Multimarket Edition 2012-06-20 Published by Infineon Technologies AG 81726 Munich, Germany


    Original     		BGF149 BGF149 N0771 trimble R6 sirius D4 WLP15 PDF

    Untitled

    Abstract: No abstract text available
    Text: A64E06161 1M X 16 Bit Low Voltage Super RAM Document Title 1M X 16 Bit Low Voltage Super RAM Revision History History Issue Date Remark 0.0 Initial issue October 12, 2003 Preliminary 0.1 Change VCC range and VCCQ range November 30, 2004 Rev. No. Change page access time from 20ns to 25ns


    Original     		A64E06161 100uA 100uA MO192 PDF

    A64E06161

    Abstract: A64E06161G
    Text: A64E06161 1M X 16 Bit Low Voltage Super RAM Document Title 1M X 16 Bit Low Voltage Super RAM Revision History History Issue Date Remark 0.0 Initial issue October 12, 2003 Preliminary 0.1 Change VCC range and VCCQ range November 30, 2004 Rev. No. Change page access time from 20ns to 25ns


    Original     		A64E06161 100uA MO192 A64E06161 A64E06161G PDF

    Untitled

    Abstract: No abstract text available
    Text: A64E06161 1M X 16 Bit Low Voltage Super RAM Document Title 1M X 16 Bit Low Voltage Super RAM Revision History History Issue Date Remark 0.0 Initial issue October 12, 2003 Preliminary 0.1 Change VCC range and VCCQ range November 30, 2004 Rev. No. Change page access time from 20ns to 25ns


    Original     		A64E06161 100uA MO192 PDF

    100PF

    Abstract: BS62LV2007 BS62LV2007HC BS62LV2007HI BS62LV
    Text: BSI Very Low Power/Voltage CMOS SRAM 256K X 8 bit BS62LV2007 „ FEATURES „ DESCRIPTION • Wide Vcc operation voltage : 2.4V ~ 5.5V • Very low power consumption : Vcc = 3.0V C-grade : 20mA Max. operating current I- grade : 25mA (Max.) operating current


    Original     		BS62LV2007 100ns BS62LV2007 R0201-BS62LV2007 100ns -40oC 100PF BS62LV2007HC BS62LV2007HI BS62LV PDF

    JEDEC Drawing MO-153, Variation AA

    Abstract: AT24C128BN-SH-T AT24C128BN-SH-B AT24C128B AT24C128BD3-DH-T AT24C128B-PU AT24C128B-TH-B AT24C128B-TH-T AT24C128BU2-UU-T AT24C128BY6-YH-T
    Text: 1. Features • Low-voltage and Standard-voltage Operation – 1.8 VCC = 1.8V to 5.5V Internally Organized as 16,384 x 8 Two-wire Serial Interface Schmitt Trigger, Filtered Inputs for Noise Suppression Bidirectional Data Transfer Protocol 1 MHz (5.5V, 2.5V), and 400 kHz (1.8V) Compatibility


    Original     		64-byte AT24C128B JEDEC Drawing MO-153, Variation AA AT24C128BN-SH-T AT24C128BN-SH-B AT24C128B AT24C128BD3-DH-T AT24C128B-PU AT24C128B-TH-B AT24C128B-TH-T AT24C128BU2-UU-T AT24C128BY6-YH-T PDF

    5296a

    Abstract: AT24C128BN-SH-T AT24C128BY6-YH-T AT24C128B AT24C128BN-SH-B AT24C128B-TH-T atmel lot marking atmel lot marking eeprom atmel part marking mo-229 nseb
    Text: 1. Features • Low-voltage and Standard-voltage Operation – 1.8 VCC = 1.8V to 5.5V Internally Organized as 16,384 x 8 Two-wire Serial Interface Schmitt Trigger, Filtered Inputs for Noise Suppression Bidirectional Data Transfer Protocol 1 MHz (5.5V, 2.5V), and 400 kHz (1.8V) Compatibility


    Original     		64-byte 5296a AT24C128BN-SH-T AT24C128BY6-YH-T AT24C128B AT24C128BN-SH-B AT24C128B-TH-T atmel lot marking atmel lot marking eeprom atmel part marking mo-229 nseb PDF

    bga 6x8

    Abstract: No abstract text available
    Text: BSI Very Low Power/Voltage CMOS SRAM 256K X 8 bit BS62LV2007 „ FEATURES „ DESCRIPTION • Wide Vcc operation voltage : 2.4V ~ 5.5V • Very low power consumption : Vcc = 3.0V C-grade : 20mA Max. operating current I- grade : 25mA (Max.) operating current


    Original     		BS62LV2007 100ns BS62LV2007 R0201-BS62LV2007 bga 6x8 PDF

    5296A

    Abstract: No abstract text available
    Text: 1. Features • Low-voltage and Standard-voltage Operation • • • • • • • • • • • • – 1.8 VCC = 1.8V to 5.5V Internally Organized as 16,384 x 8 Two-wire Serial Interface Schmitt Trigger, Filtered Inputs for Noise Suppression Bidirectional Data Transfer Protocol


    Original     		64-byte 5296A PDF