Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    MITSUBISHI 2SC Search Results

    MITSUBISHI 2SC Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    MELPS

    Abstract: C 3886 2SC3580 3B16 M38867E8AFS M38867E8AHP M38867M8A-XXXHP 29VCC MFA Motor RE 385 M5M5256
    Text: ADVANCED AND EVER ADVANCING MITSUBISHI ELECTRIC MITSUBISHI 8-BIT SINGLE-CHIP MICROCOMPUTER 740 FAMILY / 38000 SERIES 3886 Group User’s Manual MITSUBISHI ELECTRIC Keep safety first in your circuit designs! ● Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products


    Original
    J24532 MELPS C 3886 2SC3580 3B16 M38867E8AFS M38867E8AHP M38867M8A-XXXHP 29VCC MFA Motor RE 385 M5M5256 PDF

    Untitled

    Abstract: No abstract text available
    Text: ADVANCED AND EVER ADVANCING MITSUBISHI ELECTRIC MITSUBISHI 8-BIT SINGLE-CHIP MICROCOMPUTER 740 FAMILY / 38000 SERIES 3803/3804 Group User’s Manual MITSUBISHI ELECTRIC Keep safety first in your circuit designs! ● Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products


    Original
    malfunct118 J24532 PDF

    3803/3804

    Abstract: M38039FFSP SDIP64-P-750-1 RT1N144C "Philips Semiconductors" Catalog
    Text: ADVANCED AND EVER ADVANCING MITSUBISHI ELECTRIC MITSUBISHI 8-BIT SINGLE-CHIP MICROCOMPUTER 740 FAMILY / 38000 SERIES 3803/3804 Group User’s Manual MITSUBISHI ELECTRIC Keep safety first in your circuit designs! ● Mitsubishi Electric Corporation puts the maximum effort into making semiconductor


    Original
    J24532 3803/3804 M38039FFSP SDIP64-P-750-1 RT1N144C "Philips Semiconductors" Catalog PDF

    Untitled

    Abstract: No abstract text available
    Text: ADVANCED AND EVER ADVANCING MITSUBISHI ELECTRIC MITSUBISHI 8-BIT SINGLE-CHIP MICROCOMPUTER 740 FAMILY / 38000 SERIES 38B7 Group User’s Manual MITSUBISHI ELECTRIC Keep safety first in your circuit designs! ● Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with


    Original
    mi6/SCLK21/FLD54 P67/SRDY2/SCLK22/FLD55 P70/INT0 P71/INT1 100P6S-A PDF

    PBD 3511

    Abstract: Musical tuner ICs M38B79MFH-XXXXFP 001C 38B7 M35501FP pbd 3523 38B5 Group
    Text: ADVANCED AND EVER ADVANCING MITSUBISHI ELECTRIC MITSUBISHI 8-BIT SINGLE-CHIP MICROCOMPUTER 740 FAMILY / 38000 SERIES 38B7 Group User’s Manual MITSUBISHI ELECTRIC Keep safety first in your circuit designs! ● Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with


    Original
    P66/SCLK21/FLD54 P67/SRDY2/SCLK22/FLD55 P70/INT0 P71/INT1 100P6S-A PBD 3511 Musical tuner ICs M38B79MFH-XXXXFP 001C 38B7 M35501FP pbd 3523 38B5 Group PDF

    2SC738

    Abstract: 2SC7 FT440
    Text: MITSUBISHI SEMICONDUCTOR <SMALL-SIGNAL TRANSISTOR 2SC738 FOR FM RADIO HIGH FREQUENCY AMPLIFY, FREQUENCY EXCHANGE, LOCAL OSCILATION APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SC738 is a resin sealed silicon NPN epitaxial type transistor


    OCR Scan
    2SC738 2SC738 100MHz, 440MHztyp SC-43 100MHz 2SC7 FT440 PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SC4258 FOR HIGH FREQUENCY, MEDIUM FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SC4258 is a super mini package resin sealed silicon NPN epitaxial Unit:mm OUTLINE DRAWING


    OCR Scan
    2SC4258 2SC4258 11mstyp PDF

    2SC4266

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SC4266 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SC4266 is a silicon NPN epitaxial type transistor designed for low OUTLINE DRAWING frequency voltage amplify implication.


    OCR Scan
    2SC4266 2SC4266 2SA1630. PDF

    2SC2320L

    Abstract: h a 431 transistor RO10K
    Text: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SC2320L FOR LOW FREQUENCY LOW NOISE AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SC2320L is a silicon NPN epitaxial type transistor designed for low OUTLINE DRAWING Unit:mrn < 5.6MAX


    OCR Scan
    2SC2320L 2SC2320L 100nnA, NVS150mV SC-43 270Hz h a 431 transistor RO10K PDF

    transistor marking 2A H

    Abstract: mitsubishi vcb 2sc4357 mitsubishi symbol marking La 4108
    Text: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SC4357 FOR HIGH CURRENT DRIVE AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SC4357 is a silicon NPN epitaxial type transistor designed for high collector current, for high voltage.


    OCR Scan
    2SC4357 2SC4357 500mW transistor marking 2A H mitsubishi vcb mitsubishi symbol marking La 4108 PDF

    2SG3053

    Abstract: 2SC3053
    Text: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SC3053 FOR HIGH FREQUENCY AMPLIFY, MEDIUM FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SG3053 is a super mini silicon NPN epitaxial type transistor OUTLINE DRAWING „ „


    OCR Scan
    2SC3053 2SG3053 -100MH2 2SC3053 PDF

    2SC5170

    Abstract: LE300 mitsubishi vcb transistor Common Base amplifier common base amplifier circuit DUAL TRANSISTOR
    Text: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SC5170 DUAL TRANSISTOR (BASE COMMON) FOR CONSTANT-CURRENT CIRCUIT, ACTIVE LOAD APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SC5170 is a silicon NPN epitaxial type transistor. It is designed for


    OCR Scan
    2SC5170 2SC5170 100Hz) 110mVtyp X10-3 LE300 mitsubishi vcb transistor Common Base amplifier common base amplifier circuit DUAL TRANSISTOR PDF

    2SC5169

    Abstract: low noise transistor table
    Text: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SC5169 DUAL TRANSISTOR FOR LOW NOISE DIFFERENTIAL AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SCS169 is a silicon NPN epitaxial type transistor. It Is designed for Unit:mm OUTLINE DRAWING


    OCR Scan
    2SC5169 2SCS169 100mVtyp X10-3 2SC5169 low noise transistor table PDF

    2sc1914

    Abstract: 2SC1914A
    Text: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SC1914A FOR LOW FREQUENCY VOLTAGE AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SC1914A is a silicon NPN epitaxial type high voltage transistor OUTLINE DRAWING Unit: mm ¿ 5.6MAX


    OCR Scan
    2SC1914A 2SC1914A 150MHz 270Hz 2sc1914 PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SC3580 FOR HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION OUTLINE DRAWING Mitsubishi 2SC3580 is a silicon NPN epitaxial type transistor. Unit: mm ¿5.1M A X Complementary with 2SA1398.


    OCR Scan
    2SC3580 2SC3580 2SA1398. 80MHz PDF

    2SC3581

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SC3581 FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SC3581 is a silicon NPN epitaxial type transistor designed for high OUTLINE DRAWING Unitrmm ¿5.1 MAX


    OCR Scan
    2SC3581 2SC3581 2SA1399. 600mA 150MHz 25tWARD PDF

    2SC1708

    Abstract: 2SC170 2SC1708A
    Text: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SC1708A FOR LOW FREQUENCY LOW NOISE AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SC1708A is a silicon NPN epitaxial type high voltage low frequency Unitmm OUTLINE DRAWING t S.6MAX


    OCR Scan
    2SC1708A 2SC1708A 150MHz 270Hz X10-3 2SC1708 2SC170 PDF

    2SC2312

    Abstract: 27mhz transistor 27mhz rf ic A7 NPN EPITAXIAL A7 transistor transistor A7 RF POWER TRANSISTOR npn epitaxial planar high voltage transistor FET Transistor Structure mitsubishi vcb
    Text: MITSUBISHI SILICON TRANSISTOR RF POWER TRANSISTOR' 2SC2312 27MHz,12V, 17W NPN Epitaxial •MITSUBISHI ELECTRIC CORP. Planar Type GENERAL DISCRIPTION ' MITSUBISHI 2SC2312 is a silicon NPN epitaxial planar type transistor specifically designed for linear amplifiers operating


    OCR Scan
    2SC2312 27MHz 27MHz, -30dB -62dB -65dB. 2SC2312 100mA 27mhz transistor 27mhz rf ic A7 NPN EPITAXIAL A7 transistor transistor A7 RF POWER TRANSISTOR npn epitaxial planar high voltage transistor FET Transistor Structure mitsubishi vcb PDF

    2SC1310

    Abstract: transistor 5104 db CC103 2cC103
    Text: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SC1310 FOR LOW FREQUENCY LOW NOISE AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SC1310 is a silicon PNP epitaxial type transistor designed for low OUTLINE DRAWING 4.3MAX frequency low noise application.


    OCR Scan
    2SC1310 2SC1310 150mV 100mA, 270Hz 30kHz transistor 5104 db CC103 2cC103 PDF

    R T O BH TRANSISTOR

    Abstract: 2SC5168 transistor CR NPN
    Text: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SC5168 DUAL TRANSISTOR FOR LOW NOISE DIFFERENTIAL AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SC5168 is a silicon NPN epitaxial type transistor. It is designed for low noise deferential amplify application.


    OCR Scan
    2SC5168 2SC5168 100mV 250to800 270Hz X10-3 R T O BH TRANSISTOR transistor CR NPN PDF

    2sc3052

    Abstract: MARKING HRA MARKING XL
    Text: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SC3052 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SC3052 is a super mini silicon PNP epitaxial type transistor OUTLINE DRAWING designed for low frequency voltage amplify application.


    OCR Scan
    2SC3052 2SC3052 100mA, 270Hz MARKING HRA MARKING XL PDF

    2sc2320

    Abstract: TRANSISTOR 2sc2320 2SC2320/L
    Text: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SC2320 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPfTAXIAL TYPE DESCRIPTION Mitsubishi 2SC2320 is a silicon NPN epitaxial type transistor designed for low OUTLINE DRAWING ¿5.6M AX frequency voltage amplify application.


    OCR Scan
    2SC2320 2SC2320 100mA, SC-43 270Hz X10-3 TRANSISTOR 2sc2320 2SC2320/L PDF

    diode marking YG

    Abstract: 2SC3728 MITSUBISHI LOT NO transistor cr marking
    Text: MITSUBISHI SEMICONDUCTOR {SMALL-SIGNAL TRANSISTOR 2SC3728 FOR HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SC3728 Is a silicon N PN epitaxial type transistor.There is a built-in zener diode between collector to emitter.


    OCR Scan
    2SC3728 2SC3728 150to800 500mW 100mA -10mA diode marking YG MITSUBISHI LOT NO transistor cr marking PDF

    2SC5209

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SC5209 FOR RELAY DRIVE POWER SUPPLY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SC5209 is a silicon NPN epitaxial type transistor. It designed with high voltage, high collector current and high hFE.


    OCR Scan
    2SC5209 2SC5209 2SA1944. 500mA PDF