MJ15015
Abstract: MJ15016 2N3055A 2N30 MJ 2n3055 2N3055 J15016 MJ2955 MJ2955A
Text: ÆàMOSPEC COMPLEMENTARY SILICON HIGH-POWER TRANSISTORS . Power Base complementary transistors designed for high power audio, stepping motor and other linear application. These devices can also be used in power switching circuits such as relay or solenoid drivers,inverter
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2N3055
MJ2955.
2N3055A
MJ2955A
MJ15015
MJ15016
J15016
2N30
MJ 2n3055
MJ2955
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BDY38
Abstract: 2N6311 BDX18 2n3771 BDY20 BU205 BDY73 BU208 pnp transistor 2N3055 2SC1308
Text: TO-3 POWER PACKAGE TRANSISTORS NPN Maxim um R atings Type No. v CB0 v CBO v EB0 (V) (V) Min Min (V) Min Pd (W) 6Tc=25°C Electrical C haracteristics 'CBO (MA) e v CB hFE 6 (V) Max lc & (A) Min VCE (V) Max #1100 800 5 10 2 2.00 5 BU209 #1500 800 5 13 2 3.00
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BU20S
BU209
BU205
BU208
BU208A
BU208D
BU204
BDX20
BDX18
MJ295S
BDY38
2N6311
BDX18
2n3771
BDY20
BU205
BDY73
BU208
pnp transistor 2N3055
2SC1308
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mj2955
Abstract: TH 2267 j2955 BOX18 TY 2267 MJ295S BDX18
Text: File Number BDX18, MJ2955 994 Silicon P-N-P Epitaxial-Base High-Power Transistors TERMINAL DESIGNATIONS Rugged, Broadly Applicable Devices For Industrial and Com m ercial Use Features: • High dissipation capability ■ Low saturation voltages • Maximum safe-area-of-operation
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BDX18,
MJ2955
RCA-BDX18
MJ2955
BOX18)
MJ2955)
J2955.
92CS-29005
92CS-29006
92CS-29007
TH 2267
j2955
BOX18
TY 2267
MJ295S
BDX18
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MJ15015
Abstract: MJ15016 2N3055A 2N30 MJ2955 2N3055 J15016 MJ2955A
Text: COMPLEMENTARY SILICON HIGH-POWER TRANSISTORS . Power Base complementary transistors designed for high power audio, stepping motor and other linear application. These devices can also be used in power switching circuits such as relay or solenoid drivers,inverter
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OCR Scan
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PDF
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2N3055
MJ2955.
2N3055A
MJ2955A
MJ15015
MJ15016
J15016
2N30
MJ2955
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