PART NUMBER OF PNP 2A DPAK
Abstract: No abstract text available
Text: UTC MJD210 PNP EPITAXIAL PLANAR SILICON TRANSISTOR PNP SILICON DPAK FOR SURFACE MOUNT APPLICATIONS DESCRIPTION The UTC MJD210 is designed for low voltage, low-power, high-gain audio amplifier applications. 1 FEATURE * Collector-Emitter Sustaining Voltage VCEO sus =25V (Min) @ IC =10mA
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MJD210
MJD210
500mA
QW-R209-019
PART NUMBER OF PNP 2A DPAK
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Untitled
Abstract: No abstract text available
Text: UNISONICTECHNOLOGIESCO., LTD MJD210 PNP SILICON TRANSISTOR PN P SI LI CON DPAK FOR SU RFACE M OU N T APPLI CAT I ON S 1 ̈ DESCRI PT I ON TO-252 The UTC MJD210 is designed for low voltage, low-power, high-gain audio amplifier applications. ̈ FEAT U RE 1 *Collector-Emitter Sustaining Voltage
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Original
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MJD210
O-252
MJD210
-10mA
-500mA
QW-R213-001
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PDF
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MJD210
Abstract: MJD210L-TN3-R
Text: UNISONIC TECHNOLOGIES CO., LTD MJD210 PNP SILICON TRANSISTOR PNP SILICON DPAK FOR SURFACE MOUNT APPLICATIONS 1 DESCRIPTION TO-252 The UTC MJD210 is designed for low voltage, low-power, high-gain audio amplifier applications. FEATURE 1 *Collector-Emitter Sustaining Voltage
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Original
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MJD210
O-252
MJD210
-10mA
-500mA
QW-R213-001
MJD210L-TN3-R
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PDF
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MJD210L-TN3-R
Abstract: 1N5825 MJD210 MJD210L
Text: UNISONIC TECHNOLOGIES CO., LTD MJD210 PNP SILICON TRANSISTOR PNP SILICON DPAK FOR SURFACE MOUNT APPLICATIONS 1 DESCRIPTION TO-252 The UTC MJD210 is designed for low voltage, low-power, high-gain audio amplifier applications. FEATURE 1 *Collector-Emitter Sustaining Voltage
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Original
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MJD210
O-252
MJD210
500mA
QW-R213-001
MJD210L-TN3-R
1N5825
MJD210L
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