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    MJE 180 EQUIVALENT Search Results

    MJE 180 EQUIVALENT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TMP89FS60AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP64-P-1010-0.50E Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS63AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP52-P-1010-0.65 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS60BFG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP64-1414-0.80-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS63BUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP52-1010-0.65-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS62AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP44-P-1010-0.80A Visit Toshiba Electronic Devices & Storage Corporation

    MJE 180 EQUIVALENT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    r5609

    Abstract: 8E-15 A741 THS4001 bf 333 transistor 8E15 BR-049 296E-18 BF100 transistor SLOA029
    Text: Application Report SLOA029 - October 1999 THS4001 SPICE Model Performance James Karki ABSTRACT This document outlines the SPICE model of the THS4001 high-speed monolithic operational amplifier. General information about the model file structure, performance comparison,


    Original     		PDF SLOA029 THS4001 com/sc/docs/products/analog/ths4001 r5609 8E-15 A741 bf 333 transistor 8E15 BR-049 296E-18 BF100 transistor

    AB-194

    Abstract: OPA685 THS4011 THS4151 transistor zx series
    Text: Signal Conditioning: High-Speed Op Amps Texas Instruments Incorporated Designing for low distortion with high-speed op amps By James L. Karki Member, Group Technical Staff, High-Performance Linear Introduction The output of any amplifier contains the desired signal


    Original     		PDF SLYT133 AB-194 OPA685 THS4011 THS4151 transistor zx series

    Untitled

    Abstract: No abstract text available
    Text: BFR 180 NPN Silicon RF Transistor 3  For low-power amplifiers in mobile communication systems pager at collector currents from 0.2 mA to 2.5 mA  fT = 7 GHz 2 F = 2.1 dB at 900 MHz 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF VPS05161 OT-23 900MHz Oct-13-1999

    Q62702-F1296

    Abstract: No abstract text available
    Text: BFR 180 NPN Silicon RF Transistor • For low-power amplifiers in mobile communication systems pager at collector currents from 0.2mA to 2.5mA • fT = 7GHz F = 2.1dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type


    Original     		PDF 900MHz OT-23 Q62702-F1296 Feb-04-1997 Q62702-F1296

    Q62702-F1377

    Abstract: No abstract text available
    Text: BFP 180 NPN Silicon RF Transistor • For low-power amplifiers in mobile communication systems pager at collector currents from 0.2 to 2.5mA fT = 7GHz • F = 2.1dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type


    Original     		PDF 900MHz OT-143 Q62702-F1377 Nov-22-1996 Q62702-F1377

    VPS05178

    Abstract: No abstract text available
    Text: BFP 180 NPN Silicon RF Transistor 3  For low-power amplifiers in mobile communication systems pager at collector 4 currents from 0.2 mA to 2.5 mA f T = 7 GHz 2  F = 2.1 dB at 900 MHz 1 VPS05178 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF VPS05178 OT-143 900MHz Oct-12-1999 VPS05178

    transistor zs

    Abstract: transistor MJE -024 BFR340T BFR34* transistor C5 MARKING TRANSISTOR
    Text: BFR340T NPN Silicon RFTransistor Preliminary data 3  Low voltage/ low current operation  Transistor frequency of 14 GHz  High insertion gain  Ideal for low current amplifiers and oscillators 2 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BFR340T VPS05996 EHA07524 Oct-26-2001 transistor zs transistor MJE -024 BFR340T BFR34* transistor C5 MARKING TRANSISTOR

    to225aa

    Abstract: BD678 bd676 BD682 equivalent to225aa case
    Text: BD676, BD676A, BD678, BD678A, BD680, BD680A, BD682 Plastic Medium−Power Silicon PNP Darlingtons This series of plastic, medium−power silicon PNP Darlington transistors can be used as output devices in complementary general−purpose amplifier applications.


    Original     		PDF BD676, BD676A, BD678, BD678A, BD680, BD680A, BD682 BD675, to225aa BD678 bd676 BD682 equivalent to225aa case

    START420

    Abstract: START420TR Transistor F 0552 BF280 TRANSISTOR C436
    Text: START420 NPN Silicon RF Transistor • LOW NOISE FIGURE: NFmin = 1.05dB @ 1.8GHz, 5mA, 2V • COMPRESSION P1dB = 12.5dBm @ 1.8GHz, 20mA, 2V • ULTRA MINIATURE SOT343 PACKAGE SOT343 SC70 DESCRIPTION The START420 is a member of the START family that provide market with the state of the art of RF silicon process. Manufacturated in the third generation


    Original     		PDF START420 OT343 OT343 START420 START420TR 500MHz-5GHz START420TR Transistor F 0552 BF280 TRANSISTOR C436

    PIN diode SPICE model

    Abstract: BF100 transistor 8E-15 A741 THS3001 pspice model list transistor
    Text: Application Report SLOA038 - October 1999 THS3001 SPICE Model Performance Jim Karki Mixed Signal Products ABSTRACT This application report outlines the SPICE model of the THS3001 high-speed monolithic operational amplifier. General information about the model file structure, performance comparison, model listing,


    Original     		PDF SLOA038 THS3001 com/sc/docs/products/analog/THS3001 PIN diode SPICE model BF100 transistor 8E-15 A741 pspice model list transistor

    BFP620F

    Abstract: fa 5571 transistor 3884 BFP620F ACs
    Text: BFP620F NPN Silicon Germanium RF Transistor XYs Preliminary data  For high gain low noise amplifiers  Smallest Package 1.4 x 0.8 x 0.59mm 3  Noise figure F = 0.65 dB at 1.8 GHz 2 4 outstanding G ms = 21 dB at 1.8 GHz 1 • Gold metallization for extra high reliability


    Original     		PDF BFP620F Aug-09-2001 BFP620F fa 5571 transistor 3884 BFP620F ACs

    transistor k 4213

    Abstract: BFR340T transitor RF 98 SC75 BFR34* transistor
    Text: BFR340T NPN Silicon RF Transistor 3 Preliminary data  Low voltage/ low current operation  Transition frequency of 14 GHz  High insertion gain 2  Ideal for low current amplifiers and oscillators 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BFR340T VPS05996 EHA07536 Jul-01-2003 transistor k 4213 BFR340T transitor RF 98 SC75 BFR34* transistor

    fa 5571

    Abstract: BFP620F transistor 3884
    Text: BFP620F NPN Silicon Germanium RF Transistor XYs Preliminary data  For high gain low noise amplifiers  Smallest Package 1.4 x 0.8 x 0.59mm 3  Noise figure F = 0.65 dB at 1.8 GHz 2 4 outstanding G ms = 21 dB at 1.8 GHz 1 • Gold metallization for extra high reliability


    Original     		PDF BFP620F Dec-07-2001 fa 5571 BFP620F transistor 3884

    TRANSISTOR MARKING NK

    Abstract: No abstract text available
    Text: BFR380T NPN Silicon RF Transistor 3 Preliminary data  High current capability and low figure for wide dynamic range application  Low voltage operation 2  Ideal for low phase noise oscillators up to 3.5 GHz 1  Low noise figure: 1.1 dB at 1.8 GHz VPS05996


    Original     		PDF BFR380T VPS05996 EHA07524 Feb-18-2003 TRANSISTOR MARKING NK

    fbs MARKING TRANSISTOR

    Abstract: No abstract text available
    Text: BFR360T NPN Silicon RF Transistor 3 Preliminary data  Low voltage/ low current operation  For low noise amplifiers  For Oscillators up to 3.5 GHz and Pout > 10 dBm 2  Low noise figure: 1.0 dB at 1.8 GHz 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BFR360T VPS05996 EHA07524 Jan-28-2003 fbs MARKING TRANSISTOR

    IC 7306

    Abstract: No abstract text available
    Text: BFR360T NPN Silicon RF Transistor 3 Preliminary data  Low voltage/ low current operation  For low noise amplifiers  For Oscillators up to 3.5 GHz and Pout > 10 dBm 2  Low noise figure: 1.0 dB at 1.8 GHz 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BFR360T VPS05996 EHA07524 Jul-29-2002 IC 7306

    TYN 208 equivalent

    Abstract: bt 824 600b FR207 equivalent BRX49 equivalent MZ2361 equivalent BTA08-600C equivalent n4468 CS2181 TYN 276 BTA16-600B equivalent
    Text: Index/Cross R e fe re n ce Industry Part Number Central Part Number Code Page Industry Part Number Central Part Number Code Page Industry Part Number Central Part Number Code Page 1N 34A 118 1N2977B 128 1N3320B 128 1N 60 118 1N2978B 128 1N3321B 128 1N 67 A


    OCR Scan     		PDF 1N2977 N2979 N2980 N2983 N2984 ZC2800E ZC2810E ZC2811E ZC5800E CQ202-4N-2 TYN 208 equivalent bt 824 600b FR207 equivalent BRX49 equivalent MZ2361 equivalent BTA08-600C equivalent n4468 CS2181 TYN 276 BTA16-600B equivalent

    BRX49 equivalent

    Abstract: FR207 equivalent 4835D TYN 208 equivalent BDW84C equivalent BTA16-600B equivalent BCX38C equivalent MP 1048 EM q4003l4 TYN208
    Text: Index/Cross Reference Industry Part Number Central Part Number Page Industry Part Number 1N 34A 118 1N 60 Central Part Number Page Industry Part Number 1N968B 122 1N2838B 118 IN 969B 122 1N2839B 129 1N 67 A 118 1N970B 122 1N2840B 129 Code Code Central Part Number


    OCR Scan     		PDF 1N270 1N276 1N283 1N295 1N457A 1N703A 1N705A 1N746A 1N747A 1N750A BRX49 equivalent FR207 equivalent 4835D TYN 208 equivalent BDW84C equivalent BTA16-600B equivalent BCX38C equivalent MP 1048 EM q4003l4 TYN208

    BTA08-600C equivalent

    Abstract: BTA16-600B equivalent BDW84C equivalent TYN 208 equivalent FR207 equivalent 2N3668 MDA2506 mda 2060 1n5399 equivalent 1N4465
    Text: index/cross Reference Industry Part Number Central Part Number Page Industry Part Number 1N 34A 118 1N 60 118 1N 67A Central Part Number Page Industry Part Number 1N 968B 122 1N2838B 129 1N 969B 122 1N2839B 129 118 1N 970B 122 1N2840B 129 1N 87A 118 1N 971B


    OCR Scan     		PDF Z0409ME Z0409MF Z0409NE Z0409NF Z0410BE Z0410BF Z0410DE Z0410DF Z0410ME Z0410MF BTA08-600C equivalent BTA16-600B equivalent BDW84C equivalent TYN 208 equivalent FR207 equivalent 2N3668 MDA2506 mda 2060 1n5399 equivalent 1N4465

    TRIAC 97A6

    Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
    Text: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1


    OCR Scan     		PDF OD-80 OD-323 OT-23 OT-89 OT-143 OT-223 OT-323 TRIAC 97A6 S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C

    Untitled

    Abstract: No abstract text available
    Text: IH 5 1 4 0 - IH 5 1 4 5 IH 5140-IH 5145 S E M I C O N D U C T O R High-Level CMOS Analog Switch GENERAL DESCRIPTION FEATURES T h e IH 5140 Fam ily o f C M OS sw itches utilizes H arris’ latch-tree junction isolated processing to build th e fa ste st sw itches currently available. Th e se sw itche s can b e toggled


    OCR Scan     		PDF 5140-IH IH5140-IH5145 235Hz

    FR180

    Abstract: BFR180
    Text: SIEMENS B F R 180 NPN Silicon RF Transistor • For low-power amplifiers in mobile communication systems pager at collector currents from 0.2mA to 2.5mA • f j = 7GH;: F = 2.1 dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution!


    OCR Scan     		PDF 900MHz Q62702-F1296 OT-23 FR180 BFR180

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BFR 180 NPN Silicon RF Transistor • For low-power amplifiers in mobile communication systems pager at collector currents from 0.2mA to 2.5mA * fT = 7G H z F = 2.1dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution!


    OCR Scan     		PDF 900MHz Q62702-F1296 OT-23 D1220b7

    Untitled

    Abstract: No abstract text available
    Text: SIEM ENS BFP 180 NPN Silicon RF Transistor • For low-power amplifiers in mobile communication systems pager at collector currents from 0.2 to 2.5mA f l —7GHz • F = 2 .1 d B at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution!


    OCR Scan     		PDF 900MHz Q62702-F1377 OT-143 fiB35b05 fl23SbOS