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    MJE 340 TRANSISTOR Search Results

    MJE 340 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    MJE 340 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MJE 340 transistor

    Abstract: transistor mje 340 Power Transistors TO-126 Case 340 mje 340 NPN POWER TRANSISTOR SOT-32
    Text: Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 IS/ISO 9002 Lic# QSC/L- 000019.2 An IS/ISO 9002 and IECQ Certified Manufacturer NPN PLASTIC MEDIUM POWER SILICON TRANSISTOR MJE 340 TO126 Useful For HIgh Voltage General Purpose Applications


    Original     		PDF C-120 MJE 340 transistor transistor mje 340 Power Transistors TO-126 Case 340 mje 340 NPN POWER TRANSISTOR SOT-32

    gummel

    Abstract: MJE 340 transistor SPICE PARAMETER, sanyo, bipolar transistor Spice Parameter, Bipolar Transistor 2SC5566
    Text: 2SC5566 SPICE PARAMETER NPN Bipolar Transistor model : Gummel-Poon Parameter Value IS 650.0f NF 1 IKF 790.0m NE 2 NR 1 780.0m IKR NC 2 IRB 100.0m RE 21.00m XTB 1 XTI 3 VJE 680.0m TF 350p VTF 20 PTF VJC 600.0m XCJC 1 FC 500.0m AF 1 Temp = Date : Unit A A A


    Original     		PDF 2SC5566 gummel MJE 340 transistor SPICE PARAMETER, sanyo, bipolar transistor Spice Parameter, Bipolar Transistor 2SC5566

    "Bipolar Transistor"

    Abstract: 2SC6080 MJE 1000n
    Text: 2SC6080 SPICE PARAMETER NPN Bipolar Transistor model : Gummel-Poon Parameter Value IS 2.800p NF 1 IKF 10 NE 2 NR 1 IKR 2.4 NC 2 IRB 200.0m RE 17.00m XTB 2 XTI 3 VJE 685.0m TF 700p VTF PTF VJC 620.0m XCJC 1 FC 500.0m AF 1 Temp = Date : Unit A A A A Ohm V sec


    Original     		PDF 2SC6080 "Bipolar Transistor" 2SC6080 MJE 1000n

    2SC5706 equivalent

    Abstract: 2sc5706 2sc5706 equivalent transistor 2sc5706 transistor SPICE PARAMETER, sanyo, bipolar transistor 2SC570 2SC5706-SPICE
    Text: 2SC5706 SPICE PARAMETER NPN Bipolar Transistor model : Gummel-Poon Parameter Value IS 650.0f NF 1 IKF 790.0m NE 2 NR 1 IKR 780.0m NC 2 IRB 100.0m RE 21.00m XTB 1 XTI 3 VJE 680.0m TF 350p VTF 20 PTF VJC 600.0m XCJC 1 FC 500.0m AF 1 Temp = Date : Unit A A A


    Original     		PDF 2SC5706 2SC5706 equivalent 2sc5706 2sc5706 equivalent transistor 2sc5706 transistor SPICE PARAMETER, sanyo, bipolar transistor 2SC570 2SC5706-SPICE

    transistor mje 350

    Abstract: transistor mje mje 350 mje 340
    Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer PNP PLASTIC MEDIUM POWER SILICON TRANSISTOR MJE 350 CEN TO126 MARKING: CEN 350 Designed For Use Line - Operated Applications Such As Low


    Original     		PDF C-120 transistor mje 350 transistor mje mje 350 mje 340

    MJE 340 transistor

    Abstract: Power Transistors TO-126 Case mje 31 c MJE 350 PNP power transistor transistor mje 350 300V regulator lic datasheet MJE-350 PNP POWER TRANSISTOR SOT-32 TO 126
    Text: IS / IECQC 700000 IS / IECQC 750100 IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer PNP PLASTIC MEDIUM POWER SILICON TRANSISTOR MJE 350 TO 126 Designed For Use Line - Operated Applications Such As Low


    Original     		PDF C-120 MJE 340 transistor Power Transistors TO-126 Case mje 31 c MJE 350 PNP power transistor transistor mje 350 300V regulator lic datasheet MJE-350 PNP POWER TRANSISTOR SOT-32 TO 126

    TA 8644

    Abstract: BFP690 SCT595 GMA marking
    Text: BFP690 NPN Silicon Germanium RF Transistor 4 Preliminary data 5  For medium power amplifiers  Maxim. available Gain Gma = 17 dB at 1.8 GHz 3  Gold metallization for high reliability 2  70 GHz fT - Silicon Germanium technology 1 VPW05980 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BFP690 VPW05980 SCT595 200mA Oct-30-2002 TA 8644 BFP690 SCT595 GMA marking

    SOT343 C5

    Abstract: SPICE 2G6 START405 START405TR
    Text: START405 NPN Silicon RF Transistor • LOW NOISE FIGURE: NFmin = 1.1dB @ 1.8GHz, 2mA, 2V • COMPRESSION P1dB = 5dBm @ 1.8GHz, 5mA, 2V • TRANSITION FREQUENCY 42GHz • LOW CURRENT CONSUMPTION • ULTRA MINIATURE SOT343 PACKAGE SOT343 SC70 ORDER CODE START405TR


    Original     		PDF START405 42GHz OT343 OT343 START405TR START405 500MHz-5GHz SOT343 C5 SPICE 2G6 START405TR

    BF340

    Abstract: SOT343 C5 IC 0829 START405 START405TR
    Text: START405 NPN Silicon RF Transistor • LOW NOISE FIGURE: NFmin = 1.1dB @ 1.8GHz, 2mA, 2V • COMPRESSION P1dB = 5dBm @ 1.8GHz, 5mA, 2V • TRANSITION FREQUENCY 42GHz • LOW CURRENT CONSUMPTION • ULTRA MINIATURE SOT343 PACKAGE SOT343 SC70 ORDER CODE START405TR


    Original     		PDF START405 42GHz OT343 OT343 START405TR START405 500MHz-5GHz BF340 SOT343 C5 IC 0829 START405TR

    MJE 340 transistor

    Abstract: Q62702-F1501
    Text: BFP 181W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA • fT = 8GHz F = 1.45dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code


    Original     		PDF 900MHz OT-343 Q62702-F1501 Aug-30-1996 MJE 340 transistor Q62702-F1501

    Untitled

    Abstract: No abstract text available
    Text: BFP 181W NPN Silicon RF Transistor 3  For low noise, high-gain broadband amplifier at 4 collector currents from 0.5 mA to 12 mA  fT = 8 GHz F = 1.45 dB at 900 MHz 2 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type


    Original     		PDF VPS05605 OT-343 Oct-12-1999

    SOT343 C5

    Abstract: nh TRANSISTOR transistor st 431 START405 START405TR
    Text: START405 NPN Silicon RF Transistor • LOW NOISE FIGURE: NFmin = 1.1dB @ 1.8GHz, 2mA, 2V • COMPRESSION P1dB = 5dBm @ 1.8GHz, 5mA, 2V • TRANSITION FREQUENCY 42GHz • LOW CURRENT CONSUMPTION • ULTRA MINIATURE SOT343 PACKAGE SOT343 SC70 ORDER CODE START405TR


    Original     		PDF START405 42GHz OT343 OT343 START405TR START405 SOT343 C5 nh TRANSISTOR transistor st 431 START405TR

    Untitled

    Abstract: No abstract text available
    Text: BFP181W NPN Silicon RF Transistor 3  For low noise, high-gain broadband amplifier at 4 collector currents from 0.5 mA to 12 mA  fT = 8 GHz F = 1.45 dB at 900 MHz 2 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type


    Original     		PDF BFP181W VPS05605 OT343

    Untitled

    Abstract: No abstract text available
    Text: GA04JT17-247 Normally – OFF Silicon Carbide Junction Transistor VDS VDS ON ID RDS(ON) Features Package •        RoHS Compliant 175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch


    Original     		PDF GA04JT17-247 O-247AB GA04JT17 22E-47 91E-27 37E-10 36E-10 00E-3

    LB 1639

    Abstract: transistor Bf 444 transistor 4341 transistor BF 258 transistor BF 236
    Text: SILICON TRANSISTOR UPA801T NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • • • • SMALL PACKAGE STYLE: 2 NE856 Die in a 2 mm x 1.25 mm package OUTLINE DIMENSIONS Units in mm PACKAGE OUTLINE S06 (Top View) 2.1 ± 0.1 LOW NOISE FIGURE: NF = 1.2 dB TYP at 1 GHz


    Original     		PDF UPA801T NE856 100mA UPA801T 24-Hour LB 1639 transistor Bf 444 transistor 4341 transistor BF 258 transistor BF 236

    ACPL-322J

    Abstract: MIC4452YN
    Text: GA04JT17-247 Normally – OFF Silicon Carbide Junction Transistor VDS VDS ON ID RDS(ON) Features Package •        RoHS Compliant 175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch


    Original     		PDF GA04JT17-247 O-247AB GA04JT17 22E-47 91E-27 37E-10 36E-10 00E-3 ACPL-322J MIC4452YN

    2SC3953-SPICE

    Abstract: 2sa1538 spice 2sc3953 spice 2SC5610 MJE-360 2SC4548 2sk4096 2SB631K 2SC5706 equivalent 2SC2911-SPICE
    Text: 12A02CH-SPICE -* SANYO 12A02CH SPICE PARAMETER * .LIB 12A02CH * DATE : 2006/12/26 * Temp = 27 deg .MODEL 12A02CH PNP +NF = 1.0 IS VAF = 110.0f


    Original     		PDF 12A02CH-SPICE 12A02CH 12A02CH 2SB1205 2SB1205 2SC3953-SPICE 2sa1538 spice 2sc3953 spice 2SC5610 MJE-360 2SC4548 2sk4096 2SB631K 2SC5706 equivalent 2SC2911-SPICE

    ksd 302 250v, 10a

    Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
    Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle


    OCR Scan     		PDF CB-F36c 2SD1642 2SD2182, 2SC4489, -08S- ksd 302 250v, 10a irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BFP 181W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA • f j = 8GHz F = 1.45dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Marking Ordering Code


    OCR Scan     		PDF 900MHz Q62702-F1501 OT-343

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BFP 181W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA • f j = 8GHz F = 1.45dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking


    OCR Scan     		PDF 900MHz Q62702-F1501 OT-343

    silicon npn planar rf transistor sot 143

    Abstract: marking c8 transistor transistor K 2937 BFG10 small RF NPN POWER TRANSISTOR 2.5 GHZ C5 MARKING TRANSISTOR NPN planar RF transistor RF NPN POWER TRANSISTOR 2.5 GHZ RF POWER TRANSISTOR NPN N70 transistor
    Text: Philips Semiconductors Product specification NPN 2 GHz RF power transistor FEATURES BFG10; BFG10/X PINNING • High power gain PIN • High efficiency DESCRIPTION BFG10 see Fig.1 • Small size discrete power amplifier 1 • 1.9 GHz operating area 2 base


    OCR Scan     		PDF BFG10; BFG10/X OT143 7110B2b OT143. 711Dfl2L silicon npn planar rf transistor sot 143 marking c8 transistor transistor K 2937 BFG10 small RF NPN POWER TRANSISTOR 2.5 GHZ C5 MARKING TRANSISTOR NPN planar RF transistor RF NPN POWER TRANSISTOR 2.5 GHZ RF POWER TRANSISTOR NPN N70 transistor

    npn C 1740

    Abstract: transistor bf 422 NPN equivalent of 2222 NPN rf transistor mar 8 2222 032 NPN planar RF transistor BD228 BLT11 NPN power transistor spice SOT103
    Text: Philips Semiconductors Product specification NPN 2 G H z RF power transistor BLT11 FEATURES DESCRIPTION • High power gain NPN silicon planar epitaxial transistor encapsulated in a 4-pin dual-emitter SOT 103 plastic package. • High efficiency • Small size discrete power amplifier


    OCR Scan     		PDF BLT11 7110flEb 0CH3034 npn C 1740 transistor bf 422 NPN equivalent of 2222 NPN rf transistor mar 8 2222 032 NPN planar RF transistor BD228 BLT11 NPN power transistor spice SOT103

    2222A

    Abstract: No abstract text available
    Text: Who1 PHAECWKLAERTDT mLKM 4.8 VNPN Common Emitter Medium Power Output Transistor Ifechnical Data AT-31625 Features • 4.8 V olt O peration • +28.0 dBm P, U @ 900 MHz, Typ* MSOP-3 Surface Mount Plastic Package O utline 25 • 70% C ollector E fficiency @ 900 MHz, Typ.


    OCR Scan     		PDF AT-31625 OT-223 AT-31625 1997H 5965-5911E 2222A

    Transistor 2SA 2SB 2SC 2SD

    Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
    Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle


    OCR Scan     		PDF