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    MJE5742 Price and Stock

    onsemi MJE5742G

    TRANS NPN DARL 400V 8A TO220
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MJE5742G Tube 2,466 1
    • 1 $2.01
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    • 1000 $0.73771
    • 10000 $0.69938
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    Avnet Americas MJE5742G Tube 801 11 Weeks 1
    • 1 $1.09988
    • 10 $0.81629
    • 100 $0.80361
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    MJE5742G Bulk 17 Weeks, 1 Days 1
    • 1 $2.07
    • 10 $1.56
    • 100 $1.19
    • 1000 $0.89
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    Mouser Electronics MJE5742G 9,221
    • 1 $1.88
    • 10 $1.07
    • 100 $0.969
    • 1000 $0.8
    • 10000 $0.8
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    Verical MJE5742G 650 100
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    • 10000 $0.8983
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    Arrow Electronics MJE5742G 50 11 Weeks 50
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    Newark MJE5742G Bulk 136 1
    • 1 $0.659
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    Onlinecomponents.com MJE5742G 650
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    Rochester Electronics MJE5742G 10 1
    • 1 $0.7771
    • 10 $0.7771
    • 100 $0.7305
    • 1000 $0.6605
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    TME MJE5742G 1
    • 1 $1.64
    • 10 $1.3
    • 100 $1.16
    • 1000 $1.09
    • 10000 $1.09
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    Avnet Asia MJE5742G 11 Weeks 900
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    Avnet Silica MJE5742G 500 12 Weeks 50
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    EBV Elektronik MJE5742G 13 Weeks 50
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    Flip Electronics MJE5742G 240
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    Master Electronics MJE5742G 650
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    • 100 $0.835
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    New Advantage Corporation MJE5742G 400 1
    • 1 -
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    • 1000 $1.09
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    Win Source Electronics MJE5742G 6,100
    • 1 -
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    • 100 $1.0437
    • 1000 $0.8081
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    Wuhan P&S MJE5742G 76 1
    • 1 $1.96
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    • 100 $1.25
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    onsemi MJE5742

    TRANS NPN DARL 400V 8A TO220
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MJE5742 Tube
    • 1 -
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    Aptina Imaging MJE5742G

    Trans Darlington NPN 400V 8A 2000mW 3-Pin(3+Tab) TO-220AB Tube
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Verical MJE5742G 50 50
    • 1 -
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    • 100 $0.8006
    • 1000 $0.6705
    • 10000 $0.6705
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    MJE5742G 42 42
    • 1 -
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    • 100 $1.3165
    • 1000 $1.3165
    • 10000 $1.3165
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    onsemi MJE5742G.

    Darlington Transistor, Npn, 400V, To-220; Transistor Polarity:Npn; No. Of Pins:3Pins; Transistor Mounting:Through Hole; Operating Temperature Max:150°C; Product Range:-; Qualification:-; Collector Emitter Voltage Max:400V Rohs Compliant: Yes |Onsemi MJE5742G.
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark MJE5742G. Bulk 1
    • 1 $2.11
    • 10 $1.59
    • 100 $1.19
    • 1000 $0.89
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    MJE5742 Datasheets (28)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MJE5742 Motorola POWER DARLINGTON TRANSISTORS 8 AMPERES 300- 350- 400 VOLTS 80 WATTS Original PDF
    MJE5742 On Semiconductor NPN Silicon Power Darlington Transistors Original PDF
    MJE5742 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    MJE5742 Motorola Switchmode Datasheet Scan PDF
    MJE5742 Motorola NPN Silicon Power Darlington Transistors Scan PDF
    MJE5742 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    MJE5742 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    MJE5742 Unknown Transistor Replacements Scan PDF
    MJE5742 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    MJE5742 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    MJE5742 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    MJE5742 On Semiconductor Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, Bipolar Power, NPN, 8A, 400V, Pkg style TO220 Scan PDF
    MJE-5742 Semiconductor Technology NPN & PNP High Voltage Silicon High Power Transistors Scan PDF
    MJE5742AF On Semiconductor MJE5742 - TRANSISTOR 8 A, 400 V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN, BIP General Purpose Power Original PDF
    MJE5742AJ On Semiconductor MJE5742 - TRANSISTOR 8 A, 400 V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN, BIP General Purpose Power Original PDF
    MJE5742AK On Semiconductor MJE5742 - TRANSISTOR 8 A, 400 V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN, BIP General Purpose Power Original PDF
    MJE5742AN On Semiconductor MJE5742 - TRANSISTOR 8 A, 400 V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN, BIP General Purpose Power Original PDF
    MJE5742AS On Semiconductor MJE5742 - TRANSISTOR 8 A, 400 V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN, BIP General Purpose Power Original PDF
    MJE5742AU On Semiconductor MJE5742 - TRANSISTOR 8 A, 400 V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN, BIP General Purpose Power Original PDF
    MJE5742BA On Semiconductor MJE5742 - TRANSISTOR 8 A, 400 V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN, BIP General Purpose Power Original PDF

    MJE5742 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2n222 TRANSISTOR

    Abstract: transistor 2n222 of diode 2n222 1N493 mje5742g mje20 2n2905 time delay relay high voltage fast switching transistor for ignition coil drivers application Ferroxcube core 2N2905 transistor
    Text: MJE5740G, MJE5742G NPN Silicon Power Darlington Transistors The MJE5740G and MJE5742G Darlington transistors are designed for high−voltage power switching in inductive circuits. Features http://onsemi.com • These Devices are Pb−Free and are RoHS Compliant*


    Original     		PDF MJE5740G, MJE5742G MJE5740G MJE5740 MJE5742 MJE574xG O-220AB 2n222 TRANSISTOR transistor 2n222 of diode 2n222 1N493 mje20 2n2905 time delay relay high voltage fast switching transistor for ignition coil drivers application Ferroxcube core 2N2905 transistor

    2n222 TRANSISTOR

    Abstract: ignition coil npn power darlington MJE5742 transistor 2n222 2n222 1N493 MJE5740 MJE5740G MJE5742G MR826
    Text: MJE5740G, MJE5742G NPN Silicon Power Darlington Transistors The MJE5740G and MJE5742G Darlington transistors are designed for high−voltage power switching in inductive circuits. Features http://onsemi.com • These Devices are Pb−Free and are RoHS Compliant*


    Original     		PDF MJE5740G, MJE5742G MJE5740G MJE5742G MJE5740 MJE5742 MJE5740/D 2n222 TRANSISTOR ignition coil npn power darlington MJE5742 transistor 2n222 2n222 1N493 MJE5740 MR826

    MJE5740

    Abstract: transistor 2n222 2n222 TRANSISTOR 1N493 2N222 2N2905 MJE5742 MR826 OF 2n222
    Text: ON Semiconductor MJE5740 MJE5742 * NPN Silicon Power Darlington Transistors The MJE5740 and MJE5742 Darlington transistors are designed for high–voltage power switching in inductive circuits. They are particularly suited for operation in applications such as:


    Original     		PDF MJE5740 MJE5742 MJE5740 MJE5742 r14525 MJE5740/D transistor 2n222 2n222 TRANSISTOR 1N493 2N222 2N2905 MR826 OF 2n222

    MJE5740

    Abstract: MJE5742 MJE-5740 MJE5740G MJE5742G
    Text: MJE5740, MJE5742 MJE5742 is a Preferred Device NPN Silicon Power Darlington Transistors The MJE5740 and MJE5742 Darlington transistors are designed for high−voltage power switching in inductive circuits. Features • Pb−Free Packages are Available* POWER DARLINGTON


    Original     		PDF MJE5740, MJE5742 MJE5742 MJE5740 MJE5740 MJE-5740 MJE5740G MJE5742G

    3904 Transistor

    Abstract: BU108 2n2222 npn bipolar junction driver ignition coil ignition coil drivers ignition control NPN POWER DARLINGTON TRANSISTORS coil driver TO-247 1N4933 equivalent bd135 TRANSISTOR REPLACEMENT GUIDE 2n2222 npn transistor footprint
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE5740 MJE5741* MJE5742* NPN Silicon Power Darlington Transistors *Motorola Preferred Device The MJE5740, 41, 42 Darlington transistors are designed for high–voltage power switching in inductive circuits. They are particularly suited for operation in applications


    Original     		PDF MJE5740, MJE5740 MJE5741* MJE5742* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A 3904 Transistor BU108 2n2222 npn bipolar junction driver ignition coil ignition coil drivers ignition control NPN POWER DARLINGTON TRANSISTORS coil driver TO-247 1N4933 equivalent bd135 TRANSISTOR REPLACEMENT GUIDE 2n2222 npn transistor footprint

    transistor 2n222

    Abstract: MJE5742G MJE5740 1N493 2N222 MJE5740G MJE5742 MR826 of diode 2n222 1K68
    Text: MJE5740G, MJE5742G NPN Silicon Power Darlington Transistors The MJE5740G and MJE5742G Darlington transistors are designed for high−voltage power switching in inductive circuits. Features http://onsemi.com • These Devices are Pb−Free and are RoHS Compliant*


    Original     		PDF MJE5740G, MJE5742G MJE5740G MJE5742G MJE5740 MJE5742 MJE5740/D transistor 2n222 MJE5740 1N493 2N222 MJE5742 MR826 of diode 2n222 1K68

    MJE5742 equivalent

    Abstract: 2n222 TRANSISTOR MJE5742 MJE20 mje5740 2N2905 transistor 1N493
    Text: ON Semiconductor MJE5740 MJE5742 * NPN Silicon Power Darlington Transistors The MJE5740 and MJE5742 Darlington transistors are designed for high−voltage power switching in inductive circuits. They are particularly suited for operation in applications such as:


    Original     		PDF MJE5740 MJE5742 MJE5742 MJE5742 equivalent 2n222 TRANSISTOR MJE20 2N2905 transistor 1N493

    2n222 TRANSISTOR

    Abstract: transistor 2n222 2n222 1N493 2N2905 MJE5740 MJE5742 MR826 of diode 2n222 MJE20
    Text: ON Semiconductort MJE5740 MJE5742 * NPN Silicon Power Darlington Transistors The MJE5740 and MJE5742 Darlington transistors are designed for high–voltage power switching in inductive circuits. They are particularly suited for operation in applications such as:


    Original     		PDF MJE5740 MJE5742 MJE5740 MJE5742 r14525 MJE5740/D 2n222 TRANSISTOR transistor 2n222 2n222 1N493 2N2905 MR826 of diode 2n222 MJE20

    2n222 TRANSISTOR

    Abstract: 1N493 2N222 MJE5740 MJE5740G MJE5742 MJE5742G MR826
    Text: MJE5740, MJE5742 MJE5742 is a Preferred Device NPN Silicon Power Darlington Transistors The MJE5740 and MJE5742 Darlington transistors are designed for high−voltage power switching in inductive circuits. Features http://onsemi.com • Pb−Free Packages are Available*


    Original     		PDF MJE5740, MJE5742 MJE5742 MJE5740 MJE5740 MJE5740/D 2n222 TRANSISTOR 1N493 2N222 MJE5740G MJE5742G MR826

    2n2222 npn bipolar junction

    Abstract: 2N2905 MOTOROLA motorola transistor ignition MJE5740-D MJE5742 2N2905 equivalent 2N2905 MOTOROLA datasheet data sheet book TRANSISTOR 2N2222 2n2222 transistor to 92 MR826 diode
    Text: MOTOROLA Order this document by MJE5740/D SEMICONDUCTOR TECHNICAL DATA MJE5740 MJE5741 * MJE5742 * NPN Silicon Power Darlington Transistors *Motorola Preferred Device The MJE5740, 41, 42 Darlington transistors are designed for high–voltage power switching in inductive circuits. They are particularly suited for operation in applications


    Original     		PDF MJE5740/D* MJE5740/D 2n2222 npn bipolar junction 2N2905 MOTOROLA motorola transistor ignition MJE5740-D MJE5742 2N2905 equivalent 2N2905 MOTOROLA datasheet data sheet book TRANSISTOR 2N2222 2n2222 transistor to 92 MR826 diode

    MJE5742

    Abstract: 1N493 2N222 2N2905 MJE5740 MR826 Darlington transistor 2N2905 MJE5742 equivalent
    Text: MJE5740, MJE5742 MJE5742 is a Preferred Device NPN Silicon Power Darlington Transistors The MJE5740 and MJE5742 Darlington transistors are designed for high−voltage power switching in inductive circuits. Features http://onsemi.com • Pb−Free Packages are Available*


    Original     		PDF MJE5740, MJE5742 MJE5742 MJE5740 MJE5740 MJE5740/D 1N493 2N222 2N2905 MR826 Darlington transistor 2N2905 MJE5742 equivalent

    Untitled

    Abstract: No abstract text available
    Text: MJE5740G, MJE5742G NPN Silicon Power Darlington Transistors The MJE5740G and MJE5742G Darlington transistors are designed for high−voltage power switching in inductive circuits. Features http://onsemi.com • These Devices are Pb−Free and are RoHS Compliant*


    Original     		PDF MJE5740G, MJE5742G MJE5740G MJE5742G MJE5740 MJE5742 MJE5740/D

    2N2222L

    Abstract: 2n222 TRANSISTOR MJE5742 MR826 1N493 2N222 MJE5740 MJE5740G MJE5742G
    Text: MJE5740, MJE5742 MJE5742 is a Preferred Device NPN Silicon Power Darlington Transistors The MJE5740 and MJE5742 Darlington transistors are designed for high−voltage power switching in inductive circuits. Features http://onsemi.com • Pb−Free Packages are Available*


    Original     		PDF MJE5740, MJE5742 MJE5742 MJE5740 MJE5740 MJE5740/D 2N2222L 2n222 TRANSISTOR MR826 1N493 2N222 MJE5740G MJE5742G

    MC68B21CP

    Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
    Text: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References


    Original     		PDF SG379/D 1N965BRL ZEN15V 1N751AS 1N967BRL ZEN18V 1N751ASRL 1N968BRL ZEN20V MC68B21CP xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N

    transistor mosfet buv18a

    Abstract: M143206EVK MMBF4856 lm358 IC 68hc05sc24 telephone line interface circuit bc517 MC68B54 XC68HC705P9 MPX100ap BUV18A
    Text: Device Index and Subject Index In Brief . . . Page Device Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.1–1 General Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–1 Subject Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–9


    Original     		PDF

    GT811

    Abstract: BD663E BDT21 TIPL780 BUV30 10u600n 2SD617 2SD1590K ge d44e1 TIPL780A
    Text: DARLINGTON TRANSISTORS Item Number Part Number Manufacturer Ic Max V BR CEO Max (A) (V) (W) PD fT hre Min Max (Hz) Max tr Max (A) (8) ICBO r (CE)ut T Op«r Max (Ohms) Max (°C) 666m 666m 666m 175 175 175 175 200 200 175 175 150 150 Package Style Darlington Transistors, NPN (Cont'd)


    Original     		PDF BDX63A MJ1001 RCA1001 2N6056 PMD12K80 MJ1201 MJD122 2SD1590M GT811 BD663E BDT21 TIPL780 BUV30 10u600n 2SD617 2SD1590K ge d44e1 TIPL780A

    mps2112

    Abstract: UC3842 smps design with TL431 MPS2111 dc motor speed control tl494 TRANSISTOR MPS2112 ic equivalent book ncp1203 mosfet triggering circuit USING TL494 smps with uc3842 and tl431 SG3526 tip122 tip127 mosfet audio amp
    Text: SG388/D Rev. 4, May-2002 Master Components Selector Guide Master Components Selector Guide ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular


    Original     		PDF SG388/D May-2002 r14525 SG388 mps2112 UC3842 smps design with TL431 MPS2111 dc motor speed control tl494 TRANSISTOR MPS2112 ic equivalent book ncp1203 mosfet triggering circuit USING TL494 smps with uc3842 and tl431 SG3526 tip122 tip127 mosfet audio amp

    2N5657 equivalent

    Abstract: 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5655 2N5656 2N5657 Plastic NPN Silicon High-Voltage Power Transistor . . . designed for use in line–operated equipment such as audio output amplifiers; low–current, high–voltage converters; and AC line relays.


    Original     		PDF 2N5655 2N5656 2N5657 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B 2N5657 equivalent 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes

    MJE494

    Abstract: 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD157 BD158 BD159 Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. 0.5 AMPERE POWER TRANSISTORS NPN SILICON 250 – 300 – 350 VOLTS


    Original     		PDF BD157 BD158 BD159 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B MJE494 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037

    2SD669 equivalent

    Abstract: BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6609 See 2N3773 Darlington Silicon Power Transistors 2N6667 2N6668 . . . designed for general–purpose amplifier and low speed switching applications. • High DC Current Gain — hFE = 3500 (Typ) @ IC = 4 Adc • Collector–Emitter Sustaining Voltage — @ 200 mAdc


    Original     		PDF 2N6609 2N3773) 2N6667 2N6668 220AB 2N6387, 2N6388 2SD669 equivalent BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544

    je5740

    Abstract: No abstract text available
    Text: MOTOROLA O rder this docum ent by M JE5740/D SEMICONDUCTOR TECHNICAL DATA MJE5740 MJE5741* MJE5742* NPN Silicon Power Darlington Transistors ‘ Motorola Preferred Device The MJE5740, 41, 42 Darlington transistors are designed for high-voltage power switching in inductive circuits. They are particularly suited for operation in applications


    OCR Scan     		PDF JE5740/D MJE5740 MJE5741* MJE5742* MJE5740, MJE5741 MJE5742 21A-06 O-220AB je5740

    ST-13002

    Abstract: mje 340 transistor transistor d 13009 transistor mje 13003 transistor d 13007 STH11 ST13003 MJE 5740 STH16006A transistor E 13009
    Text: SEMICONDUCTOR T EC H N O LO G Y , INC. SE MIC OND UC TO R TECHNOL OGY DSE D I fll3b45fl □ □ □ □ 2 3 3 5 I - 3131 S.E. Jay Street Stuart, Florida 34997 407 283-4500 • TWX - 510-953-7511 FAX 407-286-8914 NPN & PNP HIGH VOLTAGE SILICON HIGH POWER TRANSISTORS


    OCR Scan     		PDF GDDD533 ST44TE5 D44TE5 O-220 ST-12007 MJE-12007 ST-13002 MJE-13002 mje 340 transistor transistor d 13009 transistor mje 13003 transistor d 13007 STH11 ST13003 MJE 5740 STH16006A transistor E 13009

    triac zd 607

    Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
    Text: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.


    OCR Scan     		PDF SG73/D triac zd 607 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845

    MJE5742

    Abstract: 1kV NPN Darlington transistor MJE5740 power transistor mje5742 MJE5741 1N5820 221A-06 IC JRC circuits Ferroxcube core MJE5742 equivalent
    Text: i l MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE5740 MJE5741* M JE5742* NPN Silicon Power Darlington Transistors ‘ Motorola Preferred Device The MJE5740, 41, 42 Darlington transistors are designed for high-voltage power switching in inductive circuits. They are particularly suited for operation in applications


    OCR Scan     		PDF MJE5740, MJE5740 MJE5741 MJE5742 1kV NPN Darlington transistor power transistor mje5742 1N5820 221A-06 IC JRC circuits Ferroxcube core MJE5742 equivalent