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    STMicroelectronics MK48Z08B-15

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    Bristol Electronics MK48Z08B-15 2
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    Quest Components MK48Z08B-15 1
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    STMicroelectronics MK48Z08B-10

    Non-Volatile RAM, 8K x 8, 28 Pin, Plastic, DIP
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    Quest Components MK48Z08B-10 22
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    SGS Semiconductor Ltd MK48Z08B-10

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    SGS Semiconductor Ltd MK48Z08B-25

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    STMicroelectronics MK48Z08B-25

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    MK48Z08 Datasheets (23)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MK48Z08 STMicroelectronics CMOS 8K x 8 ZEROPOWER SRAM Scan PDF
    MK48Z0810 STMicroelectronics CMOS 8K x 8 ZEROPOWER SRAM Scan PDF
    MK48Z08-15 Mostek 8K x 8 ZEROPOWER RAM Scan PDF
    MK48Z08-15 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    MK48Z08-20 Mostek 8K x 8 ZEROPOWER RAM Scan PDF
    MK48Z08-20 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    MK48Z08-25 Mostek 8K x 8 ZEROPOWER RAM Scan PDF
    MK48Z08-25 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    MK48Z08-70 STMicroelectronics CMOS 8K x 8 ZEROPOWER SRAM Scan PDF
    MK48Z08B10 STMicroelectronics CMOS 8K x 8 ZEROPOWER SRAM Scan PDF
    MK48Z08-B10 STMicroelectronics 8 K x 8 ZEROPOWER SRAM Scan PDF
    MK48Z08B100 STMicroelectronics 100ns 1W 20mA V(dd): -0.3 to +7.0V CMOS 8K x 8 zeropower SRAM Scan PDF
    MK48Z08B-15 Mostek 8K x 8 ZEROPOWER RAM Scan PDF
    MK48Z08-B15 STMicroelectronics 8 K x 8 ZEROPOWER SRAM Scan PDF
    MK48Z08B-15 Thomson Semiconductors 8K x 8 Zeropower RAM Scan PDF
    MK48Z08B-20 Mostek 8K x 8 ZEROPOWER RAM Scan PDF
    MK48Z08-B20 STMicroelectronics 8 K x 8 ZEROPOWER SRAM Scan PDF
    MK48Z08B-20 Thomson Semiconductors 8K x 8 Zeropower RAM Scan PDF
    MK48Z08B-25 Mostek 8K x 8 ZEROPOWER RAM Scan PDF
    MK48Z08B-25 Thomson Semiconductors 8K x 8 Zeropower RAM Scan PDF

    MK48Z08 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    386SL intel

    Abstract: 386SL how to read Maxim date code DS1220 8086 with eprom BEST BIOS PROGRAMMING AND DATA FOR EEPROM APP540 practical applications of 8086 microprocessor DS1220 DS1225 DS1245
    Text: Maxim > App Notes > MEMORY Mar 29, 2001 Keywords: NVSRAM, DRAM, SRAM, EEPROM, shadow RAM, NV Memory, MK48Z08, MK48Z18, nvsrams, NV SRAMs APPLICATION NOTE 540 Using Nonvolatile Static RAMs Abstract: Vast resources have been spent by the semiconductor industry to build high-speed nonvolatile


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    PDF MK48Z08, MK48Z18, DS1225 DS1225s com/an540 AN540, APP540, Appnote540, 386SL intel 386SL how to read Maxim date code DS1220 8086 with eprom BEST BIOS PROGRAMMING AND DATA FOR EEPROM APP540 practical applications of 8086 microprocessor DS1220 DS1245

    M48Z08

    Abstract: M48Z18 MK48Z08 SOH28
    Text: M48Z08 M48Z18 CMOS 8K x 8 ZEROPOWER SRAM INTEGRATED ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT and BATTERY UNLIMITED WRITE CYCLES READ CYCLE TIME EQUALS WRITE CYCLE TIME AUTOMATICPOWER-FAIL CHIP DESELECTand WRITE PROTECTION CHOICE of TWO WRITE PROTECT


    Original
    PDF M48Z08 M48Z18 M48Z08: M48Z18: MK48Z08, M48Z08 M48Z18 MK48Z08 SOH28

    TEA7052DP

    Abstract: ls285ab TEA7531DP 7532DP M3541B LS285AB1 LS588N TEA7063DP LS256B pnp for 2n3019
    Text: TELEPHONE SET RECOMMENDED PRODUCTS FROM SGS-THOMSON SPEECH CIRCUITS Type Number L3280AB LS256B PROTECTION Description Very low voltage telephone speech circuit Telephone speech circuit with multifrequency interface Telephone speech circuit Programmable telephone speech circuit


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    PDF L3280AB LS256B LS285AB1 LS588N1 LS656AB TEA7052DP TEA7063DP L3100B1 LS5120B LS5060B ls285ab TEA7531DP 7532DP M3541B LS588N pnp for 2n3019

    MK48T08

    Abstract: M48Z02 Zeropower MK48Z02 M48Z02 date code M48Z18 Date Code Formats diodes St Microelectronics M48T02/12 M48Z08 MK48T MK48Z08
    Text: M48T08 M48T18 CMOS 8K x 8 TIMEKEEPER SRAM INTEGRATED ULTRA LOW POWER SRAM, REAL TIME CLOCK and POWER-FAIL CONTROL CIRCUIT BYTEWIDE RAM-LIKE CLOCK ACCESS BCD CODED YEAR, MONTH, DAY, DATE, HOURS, MINUTES and SECONDS CLOCK ACCURACY of ± 1 MINUTE a MONTH, @ 25°C


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    PDF M48T08 M48T18 M48T08: M48T18: MK48T08 M48Z02 Zeropower MK48Z02 M48Z02 date code M48Z18 Date Code Formats diodes St Microelectronics M48T02/12 M48Z08 MK48T MK48Z08

    m48z08

    Abstract: No abstract text available
    Text: M48Z08 M48Z18 CMOS 8K x 8 ZEROPOWER SRAM DATA BRIEFING INTEGRATED ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT and BATTERY UNLIMITED WRITE CYCLES READ CYCLE TIME EQUALS WRITE CYCLE TIME AUTOMATIC POWER-FAIL CHIP DESELECTand WRITE PROTECTION CHOICE of TWO WRITE PROTECT


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    PDF M48Z08 M48Z18 M48Z08: M48Z18: MK48Z08, PCDIP28 SOH28 M48Z18 AI01023B

    ae29F2008

    Abstract: ATMEL eeprom 2816A rom AE29f2008 HN462732G D27C64 AT27C64 ASD AE29F2008 d27C128 Toshiba tmm24128 HN2764
    Text: SALES/INFORMATION HOTLINE: +44 0 1226 767404 GLV32 DEVICE SUPPORT LIST ICE Technology Ltd August 30 2001 DIP devices of 32 pins or less are supported without the need of ANY adapter. Adapter number (see adapter list). Required for PLCC, SOIC or greater than 48 pins.


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    PDF GLV32 Am27C010 Am27C020 Am27C128 Am27C512 Am27C64 Am27H256 Am27LV010 Am27LV010B Am27LV020 ae29F2008 ATMEL eeprom 2816A rom AE29f2008 HN462732G D27C64 AT27C64 ASD AE29F2008 d27C128 Toshiba tmm24128 HN2764

    48z08

    Abstract: MK48Z08B-15 MK48Z18B-20 MK48Z08B10 mk48z0b DIP-28 MK48Z18B20 mk48z08b-10 MK48Z08 MK48Z08B20
    Text: MK48Z08/18/09/19 B -55/70/10/15/20 S G S -T H O M S O N • y 8 K X 8 ZEROPOWER SRAM FEATURES B ■ INTEGRATED ULTRA LOW POWER SRAM, POW ER-FAIL CO N TRO L CIRCUIT AND BAT­ TERY. DIP-28 (Plastic with BatteryTop Hat) ■ UNLIM ITED WRITE-CYCLES. ■ READ-CYCLE TIM E EQUALS W RITE-CYCLE


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    PDF MK48Z08/18/09/19 MK48Z08/09 MK48Z18/19 MK48ZXX-55 MK48ZXX-70 MK48ZXX-10 MK48ZXX-15 MK48ZXX-20 DIP-28 8Z09-B70 48z08 MK48Z08B-15 MK48Z18B-20 MK48Z08B10 mk48z0b DIP-28 MK48Z18B20 mk48z08b-10 MK48Z08 MK48Z08B20

    Untitled

    Abstract: No abstract text available
    Text: M48Z08 M48Z18 / 3 T SGS-THOMSON * 7 /. IM niBIM ilUICTtBllKSg CMOS 8K x 8 ZEROPOWER SRAM • PIN and FUNCTION COMPATIBLE with the MK48Z08,18 ■ SELF CONTAINED BATTERY in the CAPHAT DIP PACKAGE ■ SMALL OUTLINE PACKAGE PROVIDES DI­ RECT CONNECTION for a SNAPHAT HOUS­


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    PDF M48Z08 M48Z18 MK48Z08 A0-A12 100ns PCOIP28

    Untitled

    Abstract: No abstract text available
    Text: M48Z08 M48Z18 / = T SGS-THOMSON 7 # ^ [ *[ E i[ L [ I M ( Q M ( g S CMOS 8K x 8 ZEROPOWER SRAM • PIN and FUNCTION COMPATIBLE with the MK48Z08.18 ■ SELF CONTAINED BATTERY in the CAPHAT DIP PACKAGE ■ SMALL OUTLINE PACKAGE PROVIDES DI­ RECT CONNECTION for a SNAPHAT HOUS­


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    PDF M48Z08 M48Z18 MK48Z08 A0-A12 100ns PCDIP28

    Zeropower ram MK48Z

    Abstract: MK48Z08B-20 MK48Z08B-25 mk48z08 MK48Z09B-20 TA-306 MK48Z18B-20 jis h 8502 MK48Z18 MK48Z09B-25
    Text: COMPONENTS 8K 8 ZEROPO W ER RAM MOSTEK MEMORY COM PONENTS □ Predicted Worst Case Battery Life of 11 years @ 70°C NC 1 c □ 28 < o o FEATURES A ,2 2 C n 27 w □ 26 NC \ O 4 O □ 25 Aa A5 5 □ □ 24 A„ A4 6 C □ 23 A„ G □ Data retention in th e absence of pow er


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    PDF MK48Z08/18/09/19 MK48Z09/19) MK48Z08/09) MK48Z08/09: MK48Z18/19: MK48Z08B-25 MK48Z08ein Zeropower ram MK48Z MK48Z08B-20 mk48z08 MK48Z09B-20 TA-306 MK48Z18B-20 jis h 8502 MK48Z18 MK48Z09B-25

    Untitled

    Abstract: No abstract text available
    Text: f Z J ^7# S C S -T H O M S O N M K 4 8 Z 0 8 ,1 8 M K 4 8 Z 0 9 ,1 9 CMOS 8K x 8 ZEROPOW ER SRAM • INTEGRATED ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT AND BAT­ TERY. ■ UNLIMITED WRITE-CYCLES. ■ READ-CYCLE TIME EQUALS WRITE-CYCLE TIME. ■ PREDICTED WORST CASE BATTERY LIFE OF


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    PDF MK48Z18/19 MK48Z08/18/09/19 MK48Z08 MK48Z08 PHDIP28 100ns

    Untitled

    Abstract: No abstract text available
    Text: SCS-THOMSON MKI48Z18 CMOS 8K x 8 ZEROPOWER SRAM ADVANCE DATA • INDUSTRIAL TEMPERATURE RANGE -40‘C TO +85"C ■ INTEGRATED LOW POWER SRAM, POWERFAIL C O N TR O L C IR C U IT AND ENERGY SOURCE ■ UNLIMITED WRITE-CYCLES. ■ READ-CYCLE TIME EQUALS WRITE-CYCLE


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    PDF MKI48Z18 MKI48Z18 PHDIP28 100ns

    Untitled

    Abstract: No abstract text available
    Text: 55E /T T *7 # . P • 7 ^ 5 3 7 0036365 S C S -1 H O M S O N * [l» [i g « M (g § 376 s 6 ■S6TH T -H é -¿ 3 - / s - thomson M K I4 8 Z 1 8 CMOS 8K x 8 ZEROPOWER SRAM ADVANCE DATA ■ INDUSTRIAL TEMPERATURE RANGE -40‘C TO +85"C ■ INTEGRATED LOW POWER SRAM, POWERFAIL CO NTRO L C IR C U IT AND ENERGY


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    PDF MKI48Z18 PHDIP28 T-46-23-12 100ns ----------------------------SCS-mOMSON904

    MK48Z08 equivalent

    Abstract: MK48Z09 MK48Z08 MK48Z18 PHDIP thomson tv circuit diagram
    Text: 52E S G » • □□3Ô37G S - T H O M S O « e r a bSb ■ S G T H T - V ^ - 2 3 - |2_ N M K 4 8 Z 0 8 .1 8 « M K 4 8 Z 0 9 ,1 9 S G S - TH OH SO N CMOS 8K x 8 ZEROPOWER SRAM ■ INTEGRATED ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT AND BAT­


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    PDF MK48Z08 MK48Z09 -MK48Z08/09- MK48Z18/19 MK48Z08/18/09/19 vr000825 MK48Z08 PHDIP28 71E1E3? MK48Z08 equivalent MK48Z18 PHDIP thomson tv circuit diagram

    IMS1630

    Abstract: HY62256 SGS-Thomson HITACHI HM6116 DALLAS SEMICONDUCTOR Ds1235 MK4503 hm6116 cross UPD4361 SSM7188 MK4501
    Text: CROSS REFERENCE AMD SGS-THOMSON Group DALLAS Semiconductor SGS-THOMSON Group AM2147 IMS1203 DS2009 MK4501/H01 AM2148/9 IMS1223 DS2010 MK45H02 AM2167 IMS1403 DS2011 MK4503/H03 AM2168 IMS1423 or MK41 H68 DS2012 MK45H04 AM9126 MK6116 DS1210 MK48Z02 AM99C68 IMS1423 or MK41 H68


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    PDF AM2147 AM2148/9 AM2167 AM2168 AM9126 AM99C68 AM99C88 AM99C89 AM67C4501 AM67C4502 IMS1630 HY62256 SGS-Thomson HITACHI HM6116 DALLAS SEMICONDUCTOR Ds1235 MK4503 hm6116 cross UPD4361 SSM7188 MK4501

    MKB6116

    Abstract: MKB4501 IMS1630 RAM MK6116 MK48Z18BU IMS1420 MK48Z02BU
    Text: SELECTION GUIDE ZEROPOW ERS ORGANISATION DESCRIPTION PART NUMBER ICCma SPEEDns ACTIVE TTL mA@ns STBY CMOS STBY VCC TEMP RANGE PACKAGE -2 K X 8 MK48Z02 120,150,200,250 90 3 1 5V + 10 -5% 0 to + 70°C P DIP 24 -2 K X 8 UL-CERTIFIED MK48Z02BU 120,150,200,250


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    PDF 32KX8 MK48Z32 MK48Z30A MK48Z30 MK48Z19BU MK46Z19 MK48Z09BU MK48Z02 MK48Z02BU MK48Z12 MKB6116 MKB4501 IMS1630 RAM MK6116 MK48Z18BU IMS1420

    SGS MK48T18

    Abstract: MK48T08 TIMEKEEPER
    Text: ^¿7=#7. SGS-THOMSON RÆô [S Q iL[i©ir^(ô)Mô(gi APPLICATION NOTE UPGRADED MEMORY CAPABILITY USING ZEROPOWER AND TIMEKEEPER PRODUCTS Systems that need read/write non-volatile memory have several choices available: EEPROM, SRAM plus battery or the ZEROPOWER and


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    PDF MK48Z32. MK48Z02 MK48Z08 MK48Z09 MK48Z19 MK48Z32 MK48T02 MK48T08 MK48T18 SGS MK48T18 TIMEKEEPER

    K4505

    Abstract: 1601l 4Kx4 SRAM MK48T87B Z30A SRAM 2kx8 sram IMS1630 256KX1 MK41S80
    Text: ALPHANUMERICAL INDEX unless otherwise specified all Static RAMs listed are produced in CMOS technology Part Nuraöer Organization 4Kx1 IMS1203 ( 4Kx1 IMS1203M , 1Kx4 IMS1223 1Kx4 IMS1223M ' 16Kx1 IMS1400M 16Kx1 IMS1403 ' IMS1403M/LM f 16Kx1 IM S1420M A 4Kx4


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    PDF IMS1203 IMS1203M IMS1223 IMS1223M 16Kx1 IMS1400M IMS1403 IMS1403M/LM K4505 1601l 4Kx4 SRAM MK48T87B Z30A SRAM 2kx8 sram IMS1630 256KX1 MK41S80

    MK48Z08 equivalent

    Abstract: MK48Z09
    Text: ÎZ S C S -T H O M S O N 7 ^ 7 /« M K 4 8 Z 0 8 /1 8 /0 9 /1 9 B -5 5 /7 0 /1 0 /1 5 /2 0 8 K X 8 ZEROPOWER SRAM ü FEATURES • INTEGRATED ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT AND BAT­ TERY. DIP-28 PIN CONNECTIONS ■ READ-CYCLE TIME EQUALS WRITE-CYCLE


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    PDF MK48Z08/09 K48Z18/19-4 DIP-28 MK48Z08/18/09/19 MK48Z08 equivalent MK48Z09

    Untitled

    Abstract: No abstract text available
    Text: /3 T *7 M « S G S -1 H 0 M S 0 N M K 4 8 Z 0 8 /1 8 /0 9 /1 9 B ! I] 0 » i L i( g T O [ i l ( g S _ - 5 5 /7 0 /1 0 /1 5 /2 0 8 K X 8 ZEROPOWER SRAM FEATURES • INTEGRATED ULTRA LOW POWER SRAM, POW ER-FAIL CO N TRO L CIRCUIT AND BAT­ TERY.


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    PDF K48Z08/09 K48Z18/19 MK48Z09-B70 MK48Z09-B10 MK48Z09-B12 MK48Z09-B20 MK48Z19-B55 MK48Z19-B70 MK48Z19-B10 MK48Z19-B15

    MN4464-08LL

    Abstract: MB8464-15L MN4464S-08LL MB8464-15 MB8464-12L m88464a-10ll-x MK48H64-70 MK48H64-45 MCM60L64-10 MCM6064-10
    Text: - 90 - 6 4 K CMOS X -Í -y m % ít * OC .V -f ÿ S t a t i c $ R A M 8 1 9 2 x 8) % tí 2 8 P I N TAAC max (ns) TCAC nax (ns) TOE nax (ns) TOH min (ns) TOD max (ns) TWP min (ns) TDS min (ns) TDH min (ns) TWD min (ns) TUR max (ns) V D D or V C C I DD (V)


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    PDF 28PIN MB81C76A-45 MB82B78-15 MB82B78-20 MS6264C-15 MS6264CL/LL-80 MS6264CL/LL-10 MS6264CL/LL-15 MS6265-10 MSM5165-12RS MN4464-08LL MB8464-15L MN4464S-08LL MB8464-15 MB8464-12L m88464a-10ll-x MK48H64-70 MK48H64-45 MCM60L64-10 MCM6064-10

    MN4464-08LL

    Abstract: MN4464S-08LL MK48H64-45 MK48H64-55 MN4464-08L MCM6264D-20 mk48h64 MS6264-10 MS6264L-10 MSM5165-12RS
    Text: - 6 4 K m % £ « u c tm OC> CMOS * 4 TAAC max ns TCAC max (ns) TOE max (ns) 7 TOH •in (ns) f y TOD max (ns) / TWP min (ns) S t a t i c tî TDS min (ns) RAM ( 8 1 9 2 x 8 ) m e TDH TiD ■in min (ns) (ns) TWR nax (ns) V D D or V C C (V) 28PI N m I DD nax


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    PDF 28PIN MCM6264C-35 MCM6264C-45 MCM6264D-20 MS6264C-15 MS6264CL/LL-80 MS6264CL/LL-10 MS6264CL/LL-15 MS6265-10 MSM5165-12RS MN4464-08LL MN4464S-08LL MK48H64-45 MK48H64-55 MN4464-08L mk48h64 MS6264-10 MS6264L-10

    256x16 eprom

    Abstract: GS-2I5-D12 GS-D250M PHDIP28 GS-2I12-9 512X8 from 128x8 ram L293D shield gs-2i5 PHDIP24 ESM1602B
    Text: SELECTION GUIDE For detailed information on products referred to in the selection guide but not included as datasheet in this book, please refer to the databook indicated in column "DB" SGS-THOMSON DATABOOKS ORDER CODE DB a 4 B IT MCU FAMILY ET9400 DBET9400ST/1


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    PDF ET9400 EF6801/04/05 ISB12000 ISB18000 MKI48Z18 PHDIP28 MK48Z30, 256x16 eprom GS-2I5-D12 GS-D250M GS-2I12-9 512X8 from 128x8 ram L293D shield gs-2i5 PHDIP24 ESM1602B

    Zeropower ram MK48Z

    Abstract: MK48Z18B-25 jis h 8502 MK48Z08B-20 MK48Z08B-15 MK48Z09B-25 MK48Z18B-15 MK48Z08B20
    Text: 8K 8 ZERO PO W ER RAM MEMORY CO M PO NENTS P R E L IM IN A R Y FEATURES □ Predicted Worst Case Battery Life of 11 years @ 70°C □ Data retention in the absence of power □ Power Fail Interrupt Output WlK48Z09/19 □ Direct replacement for volatile 8K x 8 Byte Wide


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    PDF MK48Z08/18/09/19 WlK48Z09/19) MK48Z08/09) 28-Pin K48Z08/09: MK48Z18/19: MK48Z0BB-25 Zeropower ram MK48Z MK48Z18B-25 jis h 8502 MK48Z08B-20 MK48Z08B-15 MK48Z09B-25 MK48Z18B-15 MK48Z08B20