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onsemi MMBF5460LT1 JFET P-CH 40V 0.225W SOT23
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onsemi MMBF5460LT1G JFET P-CH 40V SOT23-3
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	MMBF5460LT1G	Digi-Reel			1	1 $0.39 10 $0.39 100 $0.39 1000 $0.39 10000 $0.39	Buy Now

MMBF5460LT1 Datasheets (8)

Part	Manufacturer	Description	Type	PDF
MMBF5460LT1	On Semiconductor	JFET - General Purpose Transistor P-Channel	Original	PDF
MMBF5460LT1	On Semiconductor	JFET - General Purpose Transistor P-Channel	Original	PDF
MMBF5460LT1	On Semiconductor	JFET General Purpose Transistor	Original	PDF
MMBF5460LT1	Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF
MMBF5460LT1	On Semiconductor	Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, JFET, P Channel, 15V, 1mA, Pkg Style SOT23	Scan	PDF
MMBF5460LT1/D	On Semiconductor	JFET OENERAL PURPOSE TRANSLSTOR P-CHANNEL	Original	PDF
MMBF5460LT1-D	On Semiconductor	JFET - General Purpose Transistor P-Channel	Original	PDF
MMBF5460LT1G	On Semiconductor	Small Signal SOT23 JFET P Channel 40V Tape and Reel	Original	PDF

MMBF5460LT1 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
MMBF5460LT1 Abstract: No abstract text available Text: ON Semiconductort JFET General Purpose Transistor MMBF5460LT1 P–Channel MAXIMUM RATINGS Rating Symbol Value Unit Drain–Gate Voltage VDG 40 Vdc Reverse Gate–Source Voltage VGSR 40 Vdc IGF 10 mAdc Forward Gate Current 3 1 THERMAL CHARACTERISTICS Characteristic	Original	PDF	MMBF5460LT1 236AB) r14525 MMBF5460LT1/D MMBF5460LT1
Untitled Abstract: No abstract text available Text: MMBF5460LT1 JFET − General Purpose Transistor P−Channel http://onsemi.com Features • Pb−Free Package is Available 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain−Gate Voltage VDG 40 Vdc Reverse Gate−Source Voltage VGSR 40 Vdc IGF 10 mAdc	Original	PDF	MMBF5460LT1 MMBF5460LT1/D
Untitled Abstract: No abstract text available Text: MMBF5460LT1 Transistors P-Channel JFET Military/High-RelN V BR DSS (V) V(BR)GSS (V)40 I(D) Max. (A) I(G) Max. (A)10m Absolute Max. Power Diss. (W)225m’ Maximum Operating Temp (øC)150õ I(GSS) Max. (A)5.0n @V(GS) (V) (Test Condition)20 V(GS)off Min. (V).75	Original	PDF	MMBF5460LT1
2n3819 field-effect transistors Abstract: MPF102 MMBF-5457 bf245b Text: Junctional Field−Effect Transistors JFETs Low−Frequency/Low−Noise Re Yfs @ 1 kHz Re Yos @ 1 kHz mmho Min µmho Max − − − 2N5460 2N5461 2N5462 − − − 3.0 1.0 1.5 1.0 1.5 2.0 3.0 3.0 4.5 MMBF5460LT1 BFR30LT1 BFR31LT1 N−Channel 2N3819 2N5457	Original	PDF	2N3819 2N5457 2N5458 BF245A BF245B BF256A 2N5460 2N5461 2N5462 O-226AA, 2n3819 field-effect transistors MPF102 MMBF-5457
MMBF5460LT1 Abstract: No abstract text available Text: ON Semiconductort JFET - General Purpose Transistor MMBF5460LT1 P–Channel 3 MAXIMUM RATINGS Rating Drain–Gate Voltage Reverse Gate–Source Voltage Forward Gate Current Symbol Value Unit VDG 40 Vdc VGSR 40 Vdc IGF 10 mAdc Symbol Max Unit PD 225 mW 1.8	Original	PDF	MMBF5460LT1 236AB) r14525 MMBF5460LT1/D MMBF5460LT1
Untitled Abstract: No abstract text available Text: ON Semiconductort JFET - General Purpose Transistor MMBF5460LT1 P−Channel 3 MAXIMUM RATINGS Rating Drain−Gate Voltage Reverse Gate−Source Voltage Forward Gate Current Symbol Value Unit VDG 40 Vdc VGSR 40 Vdc IGF 10 mAdc 1 2 CASE 318 −08, STYLE 10 SOT−23 TO −236AB	Original	PDF	MMBF5460LT1 236AB)
transistor m6e Abstract: m6e marking code MARKING JW SOT-23 MMBF5460LT1G jw sot23 marking jw MMBF5460LT1 JW SOT-23 jw sot23-3 Text: MMBF5460LT1 JFET − General Purpose Transistor P−Channel http://onsemi.com Features • Pb−Free Package is Available 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain−Gate Voltage VDG 40 Vdc Reverse Gate−Source Voltage VGSR 40 Vdc IGF 10 mAdc	Original	PDF	MMBF5460LT1 OT-23 O-236) MMBF5460LT1/D transistor m6e m6e marking code MARKING JW SOT-23 MMBF5460LT1G jw sot23 marking jw MMBF5460LT1 JW SOT-23 jw sot23-3
Untitled Abstract: No abstract text available Text: ON Semiconductort JFET - General Purpose Transistor MMBF5460LT1 P–Channel 3 MAXIMUM RATINGS Rating Symbol Value Unit Drain–Gate Voltage VDG 40 Vdc Reverse Gate–Source Voltage VGSR 40 Vdc IGF 10 mAdc Symbol Max Unit PD 225 mW 1.8 mW/°C RqJA 556 °C/W	Original	PDF	MMBF5460LT1 236AB)
MMBF5460LT1 Abstract: 90nF Text: MOTOROLA Order this document by MMBF5460LT1/D SEMICONDUCTOR TECHNICAL DATA JFET General Purpose Transistor P–Channel MMBF5460LT1 2 SOURCE 3 GATE 1 DRAIN 3 MAXIMUM RATINGS Rating Symbol Value Unit VDG 40 Vdc VGSR 40 Vdc IGF 10 mAdc Symbol Max Unit Total Device Dissipation FR– 5 Board 1	Original	PDF	MMBF5460LT1/D MMBF5460LT1 236AB) MMBF5460LT1 90nF
transistor equivalent 2n5551 Abstract: bf245 equivalent transistor equivalent book 2N5401 J-FET 2N3819 MMBF4856LT1 MIL-STD-750 method 1037 BC237 2N5551 equivalent MPS3640 equivalent MOTOROLA 2n2222 TRANSISTOR Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET General Purpose Transistor P–Channel MMBF5460LT1 2 SOURCE 3 GATE 1 DRAIN 3 MAXIMUM RATINGS Rating Symbol Value Unit VDG 40 Vdc VGSR 40 Vdc IGF 10 mAdc Symbol Max Unit Total Device Dissipation FR– 5 Board 1 TA = 25°C	Original	PDF	MMBF5460LT1 236AB) CHARACTERIS218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 transistor equivalent 2n5551 bf245 equivalent transistor equivalent book 2N5401 J-FET 2N3819 MMBF4856LT1 MIL-STD-750 method 1037 BC237 2N5551 equivalent MPS3640 equivalent MOTOROLA 2n2222 TRANSISTOR
MC68B21CP Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N Text: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References	Original	PDF	SG379/D 1N965BRL ZEN15V 1N751AS 1N967BRL ZEN18V 1N751ASRL 1N968BRL ZEN20V MC68B21CP xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
transistor mosfet buv18a Abstract: M143206EVK MMBF4856 lm358 IC 68hc05sc24 telephone line interface circuit bc517 MC68B54 XC68HC705P9 MPX100ap BUV18A Text: Device Index and Subject Index In Brief . . . Page Device Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.1–1 General Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–1 Subject Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–9	Original	PDF
BC337 BC547 Abstract: MSB81T1 MBT3904DW9T1 marking 6AA SOD MVAM115 automatic stabilizer circuit diagram range 210 to 250 volts zt751 MBT3904DW9 transistor 2N4125 CT BC547 TRANSISTOR PIN DIAGRAM Text: Small Signal Transistors, FETs and Diodes In Brief . . . New in this revision is Motorola’s GreenLine portfolio of devices. They feature energy–conserving traits superior to those of our existing line of standard parts for the same usage. GreenLine devices can actually help reduce the	Original	PDF	MDC5000T1 MDC3105LT1 BC337 BC547 MSB81T1 MBT3904DW9T1 marking 6AA SOD MVAM115 automatic stabilizer circuit diagram range 210 to 250 volts zt751 MBT3904DW9 transistor 2N4125 CT BC547 TRANSISTOR PIN DIAGRAM
2N3906 Darlington transistor Abstract: BC337 MPS5172 "cross-reference" low noise transistors bc638 transistor mpf102 LOW NOISE BC638 SOT-346 431 BC237 BC307 BC212 Text: CHAPTER 1 Selector Guide http://onsemi.com 5 Small–Signal Bipolar Transistors, JFETs, and Diodes In Brief . . . Page Bipolar Transistors General–Purpose Transistors . . . . . . . . . . . . . . . . . 8 General–Purpose Multiple Transistors . . . . . . . . 11	Original	PDF	M1MA151AT1 M1MA151KT1 M1MA152AT1 M1MA152KT1 M1MA151WAT1 M1MA151WKT1 M1MA152WAT1 M1MA152WKT1 BAS16WT1 M1MA141KT1 2N3906 Darlington transistor BC337 MPS5172 "cross-reference" low noise transistors bc638 transistor mpf102 LOW NOISE BC638 SOT-346 431 BC237 BC307 BC212

TCA780 Abstract: TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G Text: Industry Part Number 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP 1N4004GP 1N4005GP 1N4006GP 1N4007GP 1N4245GP 1N4246GP 1N4247GP 1N4248GP 1N4249GP 1N4678.1N4717 1N4728A.1N4761A 1N4933GP 1N4934GP 1N4935GP 1N4936GP	Original	PDF	1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP TCA780 TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G
CS5170 Abstract: mps2112 MPS2112ZL1 100A 300V IGBT MC3346P CS4124YDW16 ON Semiconductor PRICE BOOK 12V to 220V smps inverter bd234 igbt ac motor speed control Text: SGD501/D REV 8, January 5, 2002 NORTH AMERICA SALES AND DISTRIBUTION ON Semiconductor PRICE BOOK THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section EFFECTIVE DATE: JANUARY 5, 2002 General Information Elimination Of Ozone Depleting Chemicals . . . .	Original	PDF	SGD501/D Janua667 CS5170 mps2112 MPS2112ZL1 100A 300V IGBT MC3346P CS4124YDW16 ON Semiconductor PRICE BOOK 12V to 220V smps inverter bd234 igbt ac motor speed control
TRANSISTOR AH-16 Abstract: TRANSISTOR bH-16 equivalent of transistor bc212 bc 214 transistor marking code SOT-23 2FX 2907A PNP bipolar transistors SILICON TRANSISTOR FS 2025 marking JV SOD323 bf245 replacement GI 312 diode msd601 Text: DL126/D Rev. 7, Nov-2001 Small-Signal Device Data Bipolar Transistors, JFETs and Diodes Small-Signal Device Data ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further	Original	PDF	DL126/D Nov-2001 r14525 DL126 TRANSISTOR AH-16 TRANSISTOR bH-16 equivalent of transistor bc212 bc 214 transistor marking code SOT-23 2FX 2907A PNP bipolar transistors SILICON TRANSISTOR FS 2025 marking JV SOD323 bf245 replacement GI 312 diode msd601
N-Channel JFET FETs Abstract: ft960 Field Effect Transistors C847 P-Channel Depletion Mosfets P-Channel Depletion Mode FET p-channel jfet rf JFET with Yos MTP75N06HD BS17 Text: ON Semiconductor Field Effect Transistors and Power TMOS MOSFETs ¨ Field Effect Transistors Field Effect Transistors JFETs TMOS MOSFETs JFETs operate in the depletion mode. They are available in both P- and N-channel and are offered in both Through-hole and Surface Mount Packages. Applications include generalpurpose amplified, switches and choppers, and RF amplifiers and mixers. These devices are	Original	PDF	O-226AA O-220AB MTP6P20E MTP12P10 OT-223) MTP50P03HDL MMFT960T1 FT960 N-Channel JFET FETs Field Effect Transistors C847 P-Channel Depletion Mosfets P-Channel Depletion Mode FET p-channel jfet rf JFET with Yos MTP75N06HD BS17
BC237 Abstract: BC847BPDW1T1 Series BC548 low noise transistors bc638 cbc550c BC307 2N5550* surface mount BC212 BSR58LT1 NSDEMN11XV6T1 Text: Numeric Data Sheet Listing Data Sheet Function Page 1SS383T1 Dual Schottky Diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 51 2N3819 JFET VHF/UHF Amplifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53	Original	PDF	1SS383T1 2N3819 2N3903, 2N3904 2N3906 2N4401 2N4403 2N5087 2N5088, 2N5089 BC237 BC847BPDW1T1 Series BC548 low noise transistors bc638 cbc550c BC307 2N5550* surface mount BC212 BSR58LT1 NSDEMN11XV6T1
low noise transistors bc638 Abstract: BC548 MPS5172 "cross-reference" BC237 LOW NOISE BC638 BC449 "cross-reference" bc307b DTC114E SERIES 2N6520 DIODES MPF4856 Text: CHAPTER 4 Index http://onsemi.com 1121 http://onsemi.com 1122 Subject Index B J Bias Resistor Transistors BRTs . . . . . . . . . . . . . . . . . . . 17 JFETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 Switches and Choppers . . . . . . . . . . . . . . . . . . . . . . . . . 22	Original	PDF	MUN5313DW1T1 MUN5314DW1T1 MUN5315DW1T1 MUN5316DW1T1 MUN5330DW1T1 MUN5331DW1T1 MUN5332DW1T1 MUN5333DW1T1 MUN5334DW1T1 MUN5335DW1T1 low noise transistors bc638 BC548 MPS5172 "cross-reference" BC237 LOW NOISE BC638 BC449 "cross-reference" bc307b DTC114E SERIES 2N6520 DIODES MPF4856
Untitled Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JF E T General Purpose T ransistor MMBF5460LT1 P-Channel 2 SOURCE 1 DRAIN M AXIM U M R ATING S Rating Symbol Value Unit V DG 40 Vdc VG SR 40 Vdc IG F 10 mAdc Symbol Max Unit Total Device Dissipation F R - 5 B o a rd O	OCR Scan	PDF	MMBF5460LT1 O-236AB)
SOT-23 marking 12F Abstract: 2000E7 Text: MOTOROLA Order this document by MMBF5460LT1/D SEMICONDUCTOR TECHNICAL DATA JFET General Purpose Transistor P-Channel MMBF5460LT1 2 SOURCE MAXIMUM RATINGS Rating Drain-Gate Voltage Reverse Gate-Source Voltage Forward Gate Current Symbol Value Unit VDG 40 Vdc	OCR Scan	PDF	MMBF5460LT1/D MMBF5460LT1 OT-23 O-236AB) SOT-23 marking 12F 2000E7
Untitled Abstract: No abstract text available Text: MMBF5460LT1* M A X IM U M RATINGS Rating Symbol Value Unit Vdc Drain-Gate Voltage CASE 318-07, STYLE 10 SOT-23 TO-236AB V DG 40 V GSR 40 Vdc *GF 10 mAdc Symbol Max Unit Pd 225 mW 1.8 mW rc r »j a 556 °C/W TJ- Tsta - 5 5 to +150 °c Reverse Gate-Source Voltage	OCR Scan	PDF	MMBF5460LT1* OT-23 O-236AB) 2N5460 MMBF5460LT1
Untitled Abstract: No abstract text available Text: MMBF5460LT1* M A X I M U M R A T IN G S Rating S ym bol Value U n it Vdc Drain-G ate Voltage CASE 318-07, STYLE 10 SOT-23 TO-236AB vdg 40 V g SR 40 Vdc 'gf 10 m Adc S ym bol M ax U n it pd 225 mW 1.8 m W -cC R«j a 556 ’C/W T j ' Tstq - 5 5 to +150 =C	OCR Scan	PDF	MMBF5460LT1* MMBF5460LT1 OT-23 O-236AB) 2N5460

MMBF5460LT1 Search Results

MMBF5460LT1 Price and Stock

onsemi MMBF5460LT1

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MMBF5460LT1 Datasheets (8)

MMBF5460LT1 Datasheets Context Search

MMBF5460LT1

Untitled

Untitled

2n3819 field-effect transistors

MMBF5460LT1

Untitled

transistor m6e

Untitled

MMBF5460LT1

transistor equivalent 2n5551

MC68B21CP

transistor mosfet buv18a

BC337 BC547

2N3906 Darlington transistor

TCA780

CS5170

TRANSISTOR AH-16

N-Channel JFET FETs

BC237

low noise transistors bc638

Untitled

SOT-23 marking 12F

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