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    MMBT5551G Search Results

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    MMBT5551G Price and Stock

    Comchip Technology Corporation Ltd MMBT5551-G

    RF Bipolar Transistors VCEO=160V IC=600mA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics MMBT5551-G 2,927
    • 1 $0.39
    • 10 $0.267
    • 100 $0.169
    • 1000 $0.076
    • 10000 $0.05
    		Buy Now
    NAC MMBT5551-G 3,000
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    MMBT5551G Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MMBT5551-G1 Zowie Technology High Voltage Transistor NPN silicon Original PDF

    MMBT5551G Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MMBT5551L

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MMBT5551 NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR „ FEATURES * High Collector-Emitter Voltage: VCEO=160V * High current gain Lead-free: MMBT5551L Halogen-free: MMBT5551G „ ORDERING INFORMATION Normal MMBT5551-x-AE3-R


    Original     		PDF MMBT5551 MMBT5551L MMBT5551G MMBT5551-x-AE3-R MMBT5551L-x-AE3-R MMBT5551G-x-AE3-R OT-23 QW-R206-010 MMBT5551L

    Untitled

    Abstract: No abstract text available
    Text: Zowie Technology Corporation High Voltage Transistors Lead free product Halogen-free type FEATURE ƽ We declare that the material of product compliance with RoHS requirements. 3 COLLECTOR 3 MMBT5550GH MMBT5551GH 1 1 BASE 2 2 SOT-23 EMITTER MAXIMUM RATINGS


    Original     		PDF MMBT5550GH MMBT5551GH OT-23

    MMBT5551

    Abstract: MMBT5551L
    Text: UNISONIC TECHNOLOGIES CO., LTD MMBT5551 NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR „ FEATURES * High Collector-Emitter Voltage: VCEO=160V * High current gain Lead-free: MMBT5551L Halogen-free: MMBT5551G „ ORDERING INFORMATION Normal MMBT5551-x-AE3-R


    Original     		PDF MMBT5551 MMBT5551L MMBT5551G MMBT5551-x-AE3-R MMBT5551L-x-AE3-R MMBT5551G-x-AE3-R OT-23 QW-R206-010 MMBT5551 MMBT5551L

    1N914

    Abstract: mmbt5550 MMBT5551-G MMBT5550-G
    Text: Zowie Technology Corporation High Voltage Transistors Lead free product FEATURE ƽ We declare that the material of product compliance with RoHS requirements. 3 COLLECTOR 3 MMBT5550G MMBT5551G 1 1 BASE 2 2 SOT-23 EMITTER MAXIMUM RATINGS Rating Symbol Value


    Original     		PDF MMBT5550G MMBT5551G OT-23 1N914 mmbt5550 MMBT5551-G MMBT5550-G

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MMBT5551 NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR  DESCRIPTION The UTC MMBT5551 is a high voltage fast-switching NPN power transistor. It is characterized with high breakdown voltage, high current gain and high switching speed.


    Original     		PDF MMBT5551 MMBT5551 MMBT5551L-x-AE3-R MMBT5551G-x-AE3-R OT-23 QW-R206-010.

    Untitled

    Abstract: No abstract text available
    Text: General Purpose Transistor MMBT5401-G PNP RoHS Device Features SOT-23 -Epitaxial planar die construction. -Complementary NPN type available (MMBT5551-G). -Ideal for medium power amplification and switching. 0.119(3.00) 0.110(2.80) 3 0.056(1.40) 0.047(1.20)


    Original     		PDF MMBT5401-G OT-23 MMBT5551-G) QW-BTR18

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MMBT5551 NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR „ DESCRIPTION The UTC MMBT5551 is a high voltage fast-switching NPN power transistor. It is characterized with high breakdown voltage, high current gain and high switching speed.


    Original     		PDF MMBT5551 MMBT5551 MMBT5551L-x-AE3-R MMBT5551G-x-AE3-R OT-23 MMBT5551-x-AE3-R QW-R206-010

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MMBT5551 NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR  3 DESCRIPTION The UTC MMBT5551 is a high voltage fast-switching NPN power transistor. It is characterized with high breakdown voltage, high current gain and high switching speed.


    Original     		PDF MMBT5551 MMBT5551 OT-23 O-236) MMBT5551G-x-AE3-R QW-R206-010.

    2L smd transistor

    Abstract: 2l TRANSISTOR SMD MARKING CODE TRANSISTOR SMD MARKING CODE 2l TRANSISTOR SMD MARKING 2l smd transistor 2l MMBT5401-G SMD MARKING CODE 2L TRANSISTOR SMD MARKING CODE PD smd code 2l transistor smd 2l
    Text: COMCHIP General Purpose Transistor SMD Diodes Specialist MMBT5401-G PNP RoHS Device Features SOT-23 -Epitaxial planar die construction. -Complementary NPN type available (MMBT5551-G). -Ideal for medium power amplification and switching. 0.119(3.00) 0.110(2.80)


    Original     		PDF MMBT5401-G OT-23 MMBT5551-G) QW-BTR18 2L smd transistor 2l TRANSISTOR SMD MARKING CODE TRANSISTOR SMD MARKING CODE 2l TRANSISTOR SMD MARKING 2l smd transistor 2l MMBT5401-G SMD MARKING CODE 2L TRANSISTOR SMD MARKING CODE PD smd code 2l transistor smd 2l

    MMBT5401-G

    Abstract: No abstract text available
    Text: General Purpose Transistor MMBT5401-G PNP RoHS Device Features SOT-23 -Epitaxial planar die construction. -Complementary NPN type available (MMBT5551-G). -Ideal for medium power amplification and switching. 0.119(3.00) 0.110(2.80) 3 0.056(1.40) 0.047(1.20)


    Original     		PDF MMBT5401-G OT-23 MMBT5551-G) QW-BTR18 MMBT5401-G