g4 pc 50 w
Abstract: G2 - 395
Text: Advance Technical Information MMIX4B12N300 High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor C2 C1 G1 Electrically Isolated Tab VCES = 3000V IC90 = 12A VCE(sat) ≤ 3.2V G2 E2C4 E1C3 G4 G3 C2 G2 E2C4 E3E4 G4 E3E4 C1 G1 E1C3 Symbol Test Conditions
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MMIX4B12N300
12N300
1-23-09-A
g4 pc 50 w
G2 - 395
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information MMIX4B12N300 High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor C2 C1 G1 Electrically Isolated Tab VCES = 3000V IC110 = 11A VCE(sat) ≤ 3.2V G2 E2C4 E1C3 G4 G3 C2 G2 E2C4 E3E4 G4 E3E4 C1 G1 E1C3 Symbol
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MMIX4B12N300
IC110
IC110
MMIX4B12N300
6-07-12-B
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor MMIX4B12N300 C2 C1 G1 Electrically Isolated Tab VCES = 3000V IC110 = 11A VCE(sat) ≤ 3.2V G2 E2C4 E1C3 G4 G3 C2 G2 E2C4 E3E4 G4 E3E4 C1 G1 E1C3 Symbol
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MMIX4B12N300
IC110
MMIX4B12N300
6-07-12-B
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mini inductances
Abstract: DMA90U1800LB MMIX1F44N100Q3 MMIX4B20N300
Text: IXYSPOWER P R O D U C T B R I E F Surface Mount Power Device SMPD and Mini SMPD Packages Lighter weight, more power(ultra-low profile, energy efficient, and rugged) January 2013 SMPD-X SMPD OVERVIEW IXYS introduces a new packaging technology – the Surface Mount Power Device (SMPD)
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OT-227
O-264
PLUS247
mini inductances
DMA90U1800LB
MMIX1F44N100Q3
MMIX4B20N300
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