MMJT Search Results

MMJT Price and Stock

Filter by Manufacturer


onsemi MMJT350T1G TRANS PNP 300V 0.5A SOT223
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	MMJT350T1G	Digi-Reel	4,879		1	1 $1.14 10 $0.717 100 $1.14 1000 $0.36484 10000 $0.36484	Buy Now
	MMJT350T1G	Cut Tape	4,879		1	1 $1.14 10 $0.717 100 $1.14 1000 $0.36484 10000 $0.36484	Buy Now
	MMJT350T1G	Reel	3,000		1,000	1 - 10 - 100 - 1000 $0.33074 10000 $0.25177	Buy Now
Avnet Americas	MMJT350T1G	Reel		10 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 $0.23338	Buy Now
Mouser Electronics	MMJT350T1G		1,587			1 $0.67 10 $0.512 100 $0.373 1000 $0.29 10000 $0.242	Buy Now
Newark	MMJT350T1G	Reel			1,000	1 $0.334 10 $0.334 100 $0.334 1000 $0.334 10000 $0.301	Buy Now
	MMJT350T1G	Cut Tape			1,000	1 - 10 - 100 - 1000 $0.337 10000 $0.268	Buy Now
RS	MMJT350T1G	Bulk			10	1 - 10 $0.379 100 $0.36 1000 $0.322 10000 $0.322	Get Quote

Onlinecomponents.com	MMJT350T1G					1 - 10 - 100 - 1000 $0.2653 10000 $0.2409	Buy Now
Bristol Electronics	MMJT350T1G		1,000			1 - 10 - 100 - 1000 - 10000 -	Get Quote
	MMJT350T1G		450			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Quest Components	MMJT350T1G		360			1 $0.9 10 $0.9 100 $0.54 1000 $0.45 10000 $0.45	Buy Now
Avnet Silica	MMJT350T1G			11 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
EBV Elektronik	MMJT350T1G			12 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
onsemi SMMJT350T1G TRANS PNP 300V 0.5A SOT223
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SMMJT350T1G	Digi-Reel	988		1	1 $1.01 10 $0.633 100 $1.01 1000 $0.31858 10000 $0.31858	Buy Now
	SMMJT350T1G	Cut Tape	988		1	1 $1.01 10 $0.633 100 $1.01 1000 $0.31858 10000 $0.31858	Buy Now
	SMMJT350T1G	Reel			1,000	1 - 10 - 100 - 1000 $0.23048 10000 $0.23048	Buy Now
Avnet Americas	SMMJT350T1G	Reel		0 Weeks, 2 Days	3,572	1 - 10 - 100 - 1000 - 10000 $0.18528	Buy Now
	SMMJT350T1G	Reel		10 Weeks	4,000	1 - 10 - 100 - 1000 - 10000 $0.19464	Buy Now
Mouser Electronics	SMMJT350T1G		11,990			1 $0.62 10 $0.525 100 $0.36 1000 $0.207 10000 $0.204	Buy Now
Newark	SMMJT350T1G	Reel			1,000	1 - 10 - 100 - 1000 $0.269 10000 $0.219	Buy Now
Rochester Electronics	SMMJT350T1G		900		1	1 $0.2271 10 $0.2271 100 $0.2135 1000 $0.193 10000 $0.193	Buy Now

TME	SMMJT350T1G				1	1 $0.602 10 $0.407 100 $0.367 1000 $0.282 10000 $0.242	Get Quote
Avnet Silica	SMMJT350T1G			11 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
EBV Elektronik	SMMJT350T1G			12 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Flip Electronics	SMMJT350T1G		81,000			1 - 10 - 100 - 1000 - 10000 -	Get Quote
onsemi MMJT350T1 TRANS PNP 300V 0.5A SOT223
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	MMJT350T1	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
onsemi MMJT9410T1 TRANS NPN 30V 3A SOT223
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	MMJT9410T1	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Bristol Electronics	MMJT9410T1		923			1 - 10 - 100 - 1000 - 10000 -	Get Quote
onsemi MMJT9435T3 TRANS PNP 30V 3A SOT223
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	MMJT9435T3	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Rochester Electronics	MMJT9435T3		4,000		1	1 $0.1408 10 $0.1408 100 $0.1324 1000 $0.1197 10000 $0.1197	Buy Now

Find more MMJT price and stock on Findchips.com

MMJT Datasheets (28)

Part	Manufacturer	Description	Datasheet Type	PDF
MMJT350T1	On Semiconductor	Bipolar Power Transistor	Original	PDF
MMJT350T1-D	On Semiconductor	Bipolar Power Transistors PNP Silicon	Original	PDF
MMJT350T1G	On Semiconductor	TRANS GP BJT PNP 300V 0.5A 4SOT-223 T/R	Original	PDF
MMJT9410	Motorola	Bipolar Power Transistors	Original	PDF
MMJT9410	On Semiconductor	MMJT9410 - TRANSISTOR 3 A, 30 V, NPN, Si, POWER TRANSISTOR, TO-261AA, PLASTIC, CASE 318E-04, TO-261, 4 PIN, BIP General Purpose Power	Original	PDF
MMJT9410	On Semiconductor	Bipolar Power Transistors	Original	PDF
MMJT9410/D	On Semiconductor	Motorola Preferred Device	Original	PDF
MMJT9410-D	On Semiconductor	Bipolar Power Transistors NPN Silicon	Original	PDF
MMJT9410G	On Semiconductor	TRANS GP BJT NPN 30V 3A 3SOT-223	Original	PDF
MMJT9410T1	On Semiconductor	MMJT9410 - TRANSISTOR 10 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, CASE 318E, 4 PIN, BIP General Purpose Small Signal	Original	PDF
MMJT9410T1	On Semiconductor	Bipolar Power SOT223 NPN 3A 30V	Original	PDF
MMJT9410T1G	On Semiconductor	Bipolar Power SOT223 NPN 3A 30V; Package: SOT-223 (TO-261) 4 LEAD; No of Pins: 4; Container: Tape and Reel; Qty per Container: 1000	Original	PDF
MMJT9410T1G	On Semiconductor	Bipolar Power S0T223 NPN 3A 30V TR	Original	PDF
MMJT9410T3	On Semiconductor	MMJT9410 - TRANSISTOR 3 A, 30 V, NPN, Si, POWER TRANSISTOR, TO-261AA, PLASTIC, CASE 318E-04, TO-261, 4 PIN, BIP General Purpose Power	Original	PDF

MMJT9435	Motorola	Bipolar Power Transistors	Original	PDF
MMJT9435	On Semiconductor	MMJT9435 - TRANSISTOR Si, SMALL SIGNAL TRANSISTOR, CASE 318E-04, 4 PIN, BIP General Purpose Small Signal	Original	PDF
MMJT9435	On Semiconductor	Bipolar Power Transistor	Original	PDF
MMJT9435/D	On Semiconductor	Motorola Preferred Device	Original	PDF
MMJT9435-D	On Semiconductor	Bipolar Power Transistors PNP Silicon	Original	PDF
MMJT9435G	On Semiconductor	TRANS GP BJT PNP 30V 3A 4SOT-223	Original	PDF

MMJT Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
BD 140 transistor Abstract: MMJT9435 MOTOROLA TRANSISTOR motorola bjt Text: MOTOROLA Order this document by MMJT9435/D SEMICONDUCTOR TECHNICAL DATA MMJT9435 Preliminary Data Sheet Bipolar Power Transistors Motorola Preferred Device PNP Silicon • Collector –Emitter Sustaining Voltage — VCEO sus = 30 Vdc (Min) @ IC = 10 mAdc	Original	MMJT9435/D MMJT9435 BD 140 transistor MMJT9435 MOTOROLA TRANSISTOR motorola bjt	PDF
MMJT9410 Abstract: MMJT9410G Text: MMJT9410 Preferred Device Bipolar Power Transistors NPN Silicon Features • Collector −Emitter Sustaining Voltage − VCEO sus = 30 Vdc (Min) @ IC = 10 mAdc http://onsemi.com • High DC Current Gain − • • • • • POWER BJT IC = 3.0 AMPERES BVCEO = 30 VOLTS	Original	MMJT9410 OT-223 MMJT9410/D MMJT9410 MMJT9410G	PDF
MMJT9410 Abstract: No abstract text available Text: MOTOROLA Order this document by MMJT9410/D SEMICONDUCTOR TECHNICAL DATA Bipolar Power Transistors MMJT9410 NPN Silicon Motorola Preferred Device • Collector –Emitter Sustaining Voltage — VCEO sus = 30 Vdc (Min) @ IC = 10 mAdc • High DC Current Gain — hFE	Original	MMJT9410/D MMJT9410 MMJT9410	PDF
Untitled Abstract: No abstract text available Text: MMJT350T1 Bipolar Power Transistors PNP Silicon Bipolar power transistorsĂare designed for use in line-operated applications such as low power, line-operated series pass and switching regulators requiring PNP capability. Features http://onsemi.com 0.5 AMPERE	Original	MMJT350T1 OT-223 MMJT350T1/D	PDF
transistor BD 736 Abstract: TRANSISTOR bd 737 Text: MMJT350T1 Bipolar Power Transistors PNP Silicon . . . designed for use in line−operated applications such as low power, line−operated series pass and switching regulators requiring PNP capability. • High Collector−Emitter Sustaining Voltage − VCEO sus =300 Vdc @ IC	Original	MMJT350T1 OT-223 transistor BD 736 TRANSISTOR bd 737	PDF
bd 743 transistor Abstract: 9410A bd 743 Text: MMJT9410 Preferred Device Bipolar Power Transistors NPN Silicon • Collector −Emitter Sustaining Voltage − VCEO sus = 30 Vdc (Min) @ IC = 10 mAdc • High DC Current Gain − http://onsemi.com hFE • • • • = 85 (Min) @ IC = 0.8 Adc = 60 (Min) @ IC = 3.0 Adc	Original	MMJT9410 OT-223 bd 743 transistor 9410A bd 743	PDF
transistor bd 370 Abstract: 30240 MMJT350T1 Text: ON Semiconductort MMJT350T1 Bipolar Power Transistors PNP Silicon 0.5 AMPERE POWER TRANSISTOR PNP SILICON 300 VOLTS 2.75 WATTS . . . designed for use in line–operated applications such as low power, line–operated series pass and switching regulators requiring	Original	MMJT350T1 r14525 MMJT350T1/D transistor bd 370 30240 MMJT350T1	PDF
MMJT9435 Abstract: No abstract text available Text: ON Semiconductort MMJT9435 Bipolar Power Transistors ON Semiconductor Preferred Device PNP Silicon POWER BJT IC = 3.0 AMPERES BVCEO = 30 VOLTS VCE sat = 0.275 VOLTS • Collector –Emitter Sustaining Voltage — VCEO(sus) = 30 Vdc (Min) @ IC = 10 mAdc • High DC Current Gain —	Original	MMJT9435 r14525 MMJT9435/D MMJT9435	PDF
MMJT9410 Abstract: MMJT9410G Text: MMJT9410 Preferred Device Bipolar Power Transistors NPN Silicon Features • Collector −Emitter Sustaining Voltage − • • • • • • http://onsemi.com VCEO sus = 30 Vdc (Min) @ IC = 10 mAdc High DC Current Gain − hFE = 85 (Min) @ IC = 0.8 Adc	Original	MMJT9410 OT-223 MMJT9410/D MMJT9410 MMJT9410G	PDF
SMMJT350T1G Abstract: marking code E3 sot223 306 marking code transistor Text: MMJT350T1G, MMJT350T1G Bipolar Power Transistors PNP Silicon Bipolar power transistors are designed for use in line−operated applications such as low power, line−operated series pass and switching regulators requiring PNP capability. Features • High Collector−Emitter Sustaining Voltage −	Original	MMJT350T1G, SMMJT350T1G AEC-Q101 MMJT350T1/D marking code E3 sot223 306 marking code transistor	PDF
T350 sot223 Abstract: AYW marking code IC t350 MMJT350T1 MMJT350T1G Text: MMJT350T1 Bipolar Power Transistors PNP Silicon Bipolar power transistors are designed for use in line−operated applications such as low power, line−operated series pass and switching regulators requiring PNP capability. Features 0.5 AMPERE POWER TRANSISTOR	Original	MMJT350T1 OT-223 MMJT350T1/D T350 sot223 AYW marking code IC t350 MMJT350T1 MMJT350T1G	PDF
Untitled Abstract: No abstract text available Text: MMJT350T1G Bipolar Power Transistors PNP Silicon Bipolar power transistors are designed for use in line−operated applications such as low power, line−operated series pass and switching regulators requiring PNP capability. Features • • • • • High Collector−Emitter Sustaining Voltage	Original	MMJT350T1G AEC-Q101 OT-223 MMJT350T1/D	PDF
Untitled Abstract: No abstract text available Text: MMJT350T1 Bipolar Power Transistors PNP Silicon . . . designed for use in line−operated applications such as low power, line−operated series pass and switching regulators requiring PNP capability. • High Collector−Emitter Sustaining Voltage − VCEO sus = 300 Vdc @ IC	Original	MMJT350T1 OT-223 MMJT350T1/D	PDF
Untitled Abstract: No abstract text available Text: MMJT9410 Bipolar Power Transistors NPN Silicon Features • SOT−223 Surface Mount Packaging • Epoxy Meets UL 94 V−0 @ 0.125 in • These Devices are Pb−Free and are RoHS Compliant http://onsemi.com POWER BJT IC = 3.0 AMPERES BVCEO = 30 VOLTS VCE sat = 0.2 VOLTS	Original	MMJT9410 OT-223 MMJT9410/D	PDF

BD 140 transistor Abstract: BD NPN transistors BJT IC Vce BJT npn motorola MOTOROLA TRANSISTOR MMJT9410 Text: MOTOROLA Order this document by MMJT9410/D SEMICONDUCTOR TECHNICAL DATA MMJT9410 Preliminary Data Sheet Bipolar Power Transistors Motorola Preferred Device NPN Silicon • Collector –Emitter Sustaining Voltage — VCEO sus = 30 Vdc (Min) @ IC = 10 mAdc	Original	MMJT9410/D MMJT9410 BD 140 transistor BD NPN transistors BJT IC Vce BJT npn motorola MOTOROLA TRANSISTOR MMJT9410	PDF
MMJT9410 Abstract: power bjt Text: ON Semiconductort MMJT9410 Bipolar Power Transistors ON Semiconductor Preferred Device NPN Silicon POWER BJT IC = 3.0 AMPERES BVCEO = 30 VOLTS VCE sat = 0.2 VOLTS • Collector –Emitter Sustaining Voltage — VCEO(sus) = 30 Vdc (Min) @ IC = 10 mAdc • High DC Current Gain —	Original	MMJT9410 r14525 MMJT9410/D MMJT9410 power bjt	PDF
Untitled Abstract: No abstract text available Text: MMJT9410 Preferred Device Bipolar Power Transistors NPN Silicon Features • Collector −Emitter Sustaining Voltage − VCEO sus = 30 Vdc (Min) @ IC = 10 mAdc http://onsemi.com • High DC Current Gain − • • • • • POWER BJT IC = 3.0 AMPERES BVCEO = 30 VOLTS	Original	MMJT9410 MMJT9410/D	PDF
MMJT Abstract: No abstract text available Text: MMJT350T1G, MMJT350T1G Bipolar Power Transistors PNP Silicon Bipolar power transistors are designed for use in line−operated applications such as low power, line−operated series pass and switching regulators requiring PNP capability. Features • High Collector−Emitter Sustaining Voltage −	Original	MMJT350T1G, SMMJT350T1G MMJT350T1/D MMJT	PDF
transistor bd 370 Abstract: No abstract text available Text: MOTOROLA Order this document by MMJT94I0/D SEMICONDUCTOR TECHNICAL DATA Bipolar Power Transistors MMJT9410 NPN Silicon • Collector -Emitter Sustaining Voltage — V q e o s u s = 30 Vdc (Min) @ lc = 10 mAdc • High DC Current Gain — hpE = 85 (Min) @ lc = 0.8 Adc	OCR Scan	MMJT94I0/D OT-223 MMJT9410 318E-04, MMJT9410/D transistor bd 370	PDF
BJT npn motorola Abstract: transistor bd 370 power transistor bd JT9410 motorola bjt Text: MOTOROLA Order this document by MMJT9410/D SEMICONDUCTOR TECHNICAL DATA M M Ü T9410 Preliminary Data Sheet B ipolar Pow er Transistors Motorola Preferred Device NPN Silicon • Collector -Emitter Sustaining Voltage — VcEO sus = 30 Vdc (Min) @ Iq = 10 mAdc	OCR Scan	MMJT9410/D T9410 OT-223 31SE-04, BJT npn motorola transistor bd 370 power transistor bd JT9410 motorola bjt	PDF
lb 156 Abstract: No abstract text available Text: MOTOROLA Order this document by MMJT9435/D SEMICONDUCTOR TECHNICAL DATA Bipolar Power Transistors M M JT9435 PNP Silicon • Collector -E m itte r Sustaining Voltage — V cEO isus^ = 30 Vdc Min @ Iq = 10 mAdc • High DC Current Gain — hpE = 125 (Min) @ lc = 0.8 Adc	OCR Scan	MMJT9435/D JT9435 318E-04, lb 156	PDF
3SK127 Abstract: No abstract text available Text: 3SK127 mmjtmmm o tv * * - * . UHF O TV * 3 - * . UHF $ ««♦ * JÉ a 8 8 +m tf s • r— bt \ u K M * * m * * * » c a n - c v * * • -f# : Cr j g » Q 0 3 p F • ftiir r. I» * * o 3 - 3 « rr P* > ; : NF-a2dB(«ai) 4 t~ • \|s —?. ( ?ft 2 5 'C )	OCR Scan	3SK127 l02B3 I0-100Ã tD-10Â i0-10Â 3SK127	PDF
Untitled Abstract: No abstract text available Text: 3O T 0 L E D * ï 6'J :T Â W S l'< D £ f o \ * m P P e e w - lz m t 'ü < r c t S l\ o L E D ^ - T h t tliC Ö M S r W a P P e e ^ u /tí- ) J S D -0 2 L mmws&mmjTúLjm •asgfflBa(DC9v) fB E B B fflB ft(D C 3V ) mMmw/moit FDP »1 0 « w k \| BBÜTL*	OCR Scan	SD-02L T689-1121 I15-2 TEL0857-53-3699 SD-02L W88ffi 70dB/mJiLt 100X106X65mm TEL0857-53-3699 T689-11	PDF
Untitled Abstract: No abstract text available Text: - THI¿ DRAWTNG'ITTjNPÜèÛSHEb. COPYRIGHT D PACKft6E . TV £ 3 4 2 * -Z - ' U3C DIST REVISIONS 14 G TnT DESCRIPTION (MMJtTAßy L e o S É P l& JÊ & 4 & -1 - A LL RIGHTS RESERVED. SY TYCO ELECTRONICS CORPORATION - P a ^ t MO R ÉU A ëltï FÜR PUBLICATION	OCR Scan	18MAR 18MAR04 I710S 18MAR0+ 31MAR2000	PDF

MMJT Search Results

MMJT Price and Stock

onsemi MMJT350T1G

onsemi SMMJT350T1G

onsemi MMJT350T1

onsemi MMJT9410T1

onsemi MMJT9435T3

MMJT Datasheets (28)

MMJT Datasheets Context Search

BD 140 transistor

MMJT9410

MMJT9410

Untitled

transistor BD 736

bd 743 transistor

transistor bd 370

MMJT9435

MMJT9410

SMMJT350T1G

T350 sot223

Untitled

Untitled

Untitled

BD 140 transistor

MMJT9410

Untitled

MMJT

transistor bd 370

BJT npn motorola

lb 156

3SK127

Untitled

Untitled