Untitled
Abstract: No abstract text available
Text: MN101D03D Type MN101D03D ROM x× 8-bit 64 K RAM (×× 8-bit) 2K Package LQFP080-P-1414A *Pb free Minimum Instruction Execution Time 0.10 µs (at 4.5 V to 5.5 V, 20 MHz) 0.238 µs (at 2.7 V to 5.5 V, 8.39 MHz)*1 125 µs (at 2.0 V to 5.5 V, 32 kHz)*2 1 * The lower limit for operation guarantee for flash memory built-in type is 4.5 V.
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MN101D03D
MN101D03D
LQFP080-P-1414A
MAD00031BEM
PX-ICE101C
PX-PRB101D03-LQFP080-P-1414A
MN101DP03FAL
MN101DF03D
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PDF
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Untitled
Abstract: No abstract text available
Text: MN101D03D Type MN101D03D ROM x× 8-bit 64 K RAM (×× 8-bit) 2K Package LQFP080-P-1414A *Lead-free Minimum Instruction Execution Time 0.10 µs (at 4.5 V to 5.5 V, 20 MHz) 0.238 µs (at 2.7 V to 5.5 V, 8.39 MHz)*1 125 µs (at 2.0 V to 5.5 V, 32 kHz)*2 *1 The lower limit for operation guarantee for flash memory built-in type is 4.5 V.
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Original
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MN101D03D
MN101D03D
LQFP080-P-1414A
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PDF
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Untitled
Abstract: No abstract text available
Text: MN101D03D Type MN101D03D ROM x× 8-bit 64 K RAM (×× 8-bit) 2K Package 0.10 µs (at 4.5 V to 5.5 V, 20 MHz) 0.238 µs (at 2.7 V to 5.5 V, 8.39 MHz)*1 125 µs (at 2.0 V to 5.5 V, 32 kHz)*2 *1 The lower limit for operation guarantee for flash memory built-in type is 4.5 V.
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Original
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MN101D03D
MN101D03D
LQFP080-P-1414A
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PDF
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Untitled
Abstract: No abstract text available
Text: MN101D03D Type MN101D03D ROM x× 8-bit 64 K RAM (×× 8-bit) 2K Package LQFP080-P-1414A *Pb free Minimum Instruction Execution Time 0.10 µs (at 4.5 V to 5.5 V, 20 MHz) 0.238 µs (at 2.7 V to 5.5 V, 8.39 MHz)*1 125 µs (at 2.0 V to 5.5 V, 32 kHz)*2 1 * The lower limit for operation guarantee for flash memory built-in type is 4.5 V.
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Original
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MN101D03D
MN101D03D
LQFP080-P-1414A
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PDF
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LQFP080-P-1414A
Abstract: MN101D03A MN101D03D MN101DF03D
Text: MN101D03A , MN101D03D Type MN101D03A under planning MN101D03D ROM (x× 8-bit) 32 K 64 K RAM (×× 8-bit) 1K 2K Package LQFP080-P-1414A Minimum Instruction Execution Time 0.10 µs (at 4.5 V to 5.5 V, 20 MHz) 0.238 µs (at 2.7 V to 5.5 V, 8.39 MHz)* 1 125 µs (at 2.0 V to 5.5 V, 32 kHz)*2
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Original
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MN101D03A
MN101D03D
LQFP080-P-1414A
PX-ICE101C
PX-PRB101D03
LQFP080-P-1414A
MN101D03A
MN101D03D
MN101DF03D
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PDF
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LQFP080-P-1414A
Abstract: MN101D03D MN101DF03D P8276
Text: MN101D03D Type MN101D03D ROM x× 8-bit 64 K RAM (×× 8-bit) 2K Package LQFP080-P-1414A *Lead-free 0.10 µs (at 4.5 V to 5.5 V, 20 MHz) 0.238 µs (at 2.7 V to 5.5 V, 8.39 MHz)*1 125 µs (at 2.0 V to 5.5 V, 32 kHz)*2 *1 The lower limit for operation guarantee for flash memory built-in type is 4.5 V.
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Original
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MN101D03D
LQFP080-P-1414A
LQFP080-P-1414A
MN101D03D
MN101DF03D
P8276
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PDF
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LQFP080-P-1414A
Abstract: MN101D03D MN101DF03D
Text: MN101D03D Type MN101D03D ROM x× 8-bit 64 K RAM (×× 8-bit) 2K Package LQFP080-P-1414A *Lead-free Minimum Instruction Execution Time 0.10 µs (at 4.5 V to 5.5 V, 20 MHz) 0.238 µs (at 2.7 V to 5.5 V, 8.39 MHz)*1 125 µs (at 2.0 V to 5.5 V, 32 kHz)*2 1
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MN101D03D
LQFP080-P-1414A
LQFP080-P-1414A
MN101D03D
MN101DF03D
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PDF
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Untitled
Abstract: No abstract text available
Text: MN101D03D Type MN101D03D ROM x× 8-bit 64 K RAM (×× 8-bit) 2K Package LQFP080-P-1414A *Lead-free Minimum Instruction Execution Time 0.10 µs (at 4.5 V to 5.5 V, 20 MHz) 0.238 µs (at 2.7 V to 5.5 V, 8.39 MHz)*1 125 µs (at 2.0 V to 5.5 V, 32 kHz)*2 1
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Original
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MN101D03D
MN101D03D
LQFP080-P-1414A
MAD00031DEM
PX-ICE101C
PX-PRB101D03-LQFP080-P-1414A
MN101DP03FAL
MN101DF03D
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PDF
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Untitled
Abstract: No abstract text available
Text: MN101D03D Type MN101D03D ROM x× 8-bit 64 K RAM (×× 8-bit) 2K Package LQFP080-P-1414A *Lead-free Minimum Instruction Execution Time 0.10 µs (at 4.5 V to 5.5 V, 20 MHz) 0.238 µs (at 2.7 V to 5.5 V, 8.39 MHz)*1 125 µs (at 2.0 V to 5.5 V, 32 kHz)*2 *1 The lower limit for operation guarantee for flash memory built-in type is 4.5 V.
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Original
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MN101D03D
MN101D03D
LQFP080-P-1414A
MAD00031EEM
PX-ICE101C
PX-PRB101D03-LQFP080-P-1414A
MN101DP03FAL
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PDF
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P8276
Abstract: No abstract text available
Text: MN101D03D Type MN101D03D ROM x× 8-bit 64 K RAM (×× 8-bit) 2K Package LQFP080-P-1414A *Lead-free 0.10 µs (at 4.5 V to 5.5 V, 20 MHz) 0.238 µs (at 2.7 V to 5.5 V, 8.39 MHz)*1 125 µs (at 2.0 V to 5.5 V, 32 kHz)*2 *1 The lower limit for operation guarantee for flash memory built-in type is 4.5 V.
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Original
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MN101D03D
LQFP080-P-1414A
P8276
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PDF
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LQFP080-P-1414A
Abstract: MN101D03A MN101D03D MN101DF03D
Text: MN101D03A , MN101D03D Type MN101D03A under planning MN101D03D ROM (x× 8-bit) 32 K 64 K RAM (×× 8-bit) 1K 2K Package LQFP080-P-1414A *Pb free Minimum Instruction Execution Time 0.10 µs (at 4.5 V to 5.5 V, 20 MHz) 0.238 µs (at 2.7 V to 5.5 V, 8.39 MHz)*1
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Original
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MN101D03A
MN101D03D
LQFP080-P-1414A
LQFP080-P-1414A
MN101D03A
MN101D03D
MN101DF03D
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PDF
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P721
Abstract: LQFP080-P-1414A MN101D03A d03D
Text: □ M N 1 0 1 D 0 3 A 1 Type / D 0 3 D / D F 0 3 D MN101D03A under planning / D03D / DF03D (under development) 1 ROM (x8-Bit) 32 K / 64 K / 64 K (built-in flash EEPROM) 1 RAM ( 8-Bit) 1 024 / 2 048 / 2 048 1 Minimum Instruction Execution Time 0.10 us (at 4.5 V to 5.5 V, 20 MHz)
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OCR Scan
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MN101D03A
DF03D
MN101D03A
MN101DP03FAL
LQFP080-P-1414A
Tlv13IO
LQFP080-P-1414A
P721
d03D
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