D03D Search Results

D03D Result Highlights (3)

Part	Manufacturer	Description
RJP65D03DWS-80#W0	Renesas Electronics Corporation	IGBT for Inverter Applications
RJP65D03DWT-80#X0	Renesas Electronics Corporation	IGBT for Inverter Applications
RJP65D03DWA-80#W0	Renesas Electronics Corporation	IGBT for Inverter Applications

D03D Price and Stock

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Susumu Co Ltd RR0816P-1053-D-03D RES SMD 105K OHM 0.5% 1/16W 0603
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	RR0816P-1053-D-03D	Cut Tape	5,000		1	1 $0.1 10 $0.046 100 $0.0328 1000 $0.02294 10000 $0.02294	Buy Now
Chip One Stop	RR0816P-1053-D-03D	Cut Tape	4,600			1 - 10 - 100 $0.0213 1000 $0.013 10000 $0.0123	Buy Now
Samtec Inc IPBD-03-D CONN RCPT HSG 6POS 4.20MM Free Sample
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IPBD-03-D	Bulk	568		1	1 $0.48 10 $0.393 100 $0.3199 1000 $0.2608 10000 $0.24045	Buy Now
Mouser Electronics	IPBD-03-D		916			1 $0.76 10 $0.604 100 $0.525 1000 $0.385 10000 $0.338	Buy Now
Newark	IPBD-03-D	Bulk	474		10	1 - 10 $0.602 100 $0.511 1000 $0.365 10000 $0.314	Buy Now
Samtec Inc FFSD-03-D-08.00-01 .050 X .050 C.L. FEMALE IDC ASSE Free Sample
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	FFSD-03-D-08.00-01	Bulk	118		1	1 $10.48 10 $8.543 100 $6.9652 1000 $6.175 10000 $6.175	Buy Now
Mouser Electronics	FFSD-03-D-08.00-01		134			1 $9.94 10 $9.01 100 $6.67 1000 $4.72 10000 $3.91	Buy Now
Delta Electronics Inc DD03D2415A DC DC CONVERTER +/-15V 3W
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	DD03D2415A	Tube	97		1	1 $14.35 10 $14.35 100 $12.1745 1000 $11.73974 10000 $11.73974	Buy Now
Neutron USA	DD03D2415A		50			1 $71.48 10 $71.48 100 $71.48 1000 $71.48 10000 $71.48	Buy Now
Samtec Inc FFSD-03-D-03.94-01 .050 X .050 C.L. FEMALE IDC ASSE Free Sample
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	FFSD-03-D-03.94-01	Bulk	91		1	1 $9.68 10 $7.893 100 $6.4346 1000 $5.6625 10000 $5.6625	Buy Now
Mouser Electronics	FFSD-03-D-03.94-01		39			1 $9.13 10 $8.27 100 $6.12 1000 $4.33 10000 $3.59	Buy Now
Avnet Abacus	FFSD-03-D-03.94-01			5 Weeks	1	1 - 10 - 100 - 1000 - 10000 -	Buy Now

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D03D Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: TAS5086 www.ti.com SLES131 – FEBRUARY 2005 PurePath Digital AUDIO SIX-CHANNEL PWM PROCESSOR FEATURES • • • Audio Input/Output – Automatic Master Clock Rate and Data Sample Rate Detection – Four Serial Audio Inputs Eight Channels – Support for 32, 44.1, 48, 88.2, 96, 176.4, and	Original	TAS5086 SLES131 192-kHz 24-Bit	PDF
Untitled Abstract: No abstract text available Text: N AP1ER PHILIPS/PISCRETE b'lE D bb53T31 D03D675 T73 * A P X Product Specification Philips semiconductors PowerMOS transistor BUK638-500B Fast recovery diode FET_ GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a	OCR Scan	bb53T31 D03D675 BUK638-500B bb53331	PDF
BUK444-500B Abstract: transistor BUK444-500B transistor npc 231 Text: N AUER PHILIPS/DISCRETE b^E » • bbSB'iBl D03D535 b43 « A P X Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in	OCR Scan	BUK444-500B -SOT186 BUK444-500B transistor BUK444-500B transistor npc 231	PDF
P721 Abstract: LQFP080-P-1414A MN101D03A d03D Text: □ M N 1 0 1 D 0 3 A 1 Type / D 0 3 D / D F 0 3 D MN101D03A under planning / D03D / DF03D (under development) 1 ROM (x8-Bit) 32 K / 64 K / 64 K (built-in flash EEPROM) 1 RAM ( 8-Bit) 1 024 / 2 048 / 2 048 1 Minimum Instruction Execution Time 0.10 us (at 4.5 V to 5.5 V, 20 MHz)	OCR Scan	MN101D03A DF03D MN101D03A MN101DP03FAL LQFP080-P-1414A Tlv13IO LQFP080-P-1414A P721 d03D	PDF
fccj Abstract: BUK456-1000B TRANSISTOR na 44 B44 transistor Text: N AUER PHILIPS/DISCRETE bTE D • bbS3T31 D03Db^S TT1 * A P X Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in	OCR Scan	bbS3T31 D03Db BUK456-1000B -T0220AB fccj BUK456-1000B TRANSISTOR na 44 B44 transistor	PDF
Untitled Abstract: No abstract text available Text: HM101494 Series-16384-Words x 4-Bit Fully Decoded Random Access Memory • DESCRIPTION The HM101494 is ECL 100K compatible, 16384-words by 4-bits read/write random access memory developed for high speed sys tems such as scratch pads and control/buffer storage.	OCR Scan	HM101494 Series---------------16384-Words 16384-words 10/12ns 750mW	PDF
Untitled Abstract: No abstract text available Text: For Immediate Assistance, Contact Your Local Salesperson BURR - BROW N i INA115 1 Precision INSTRUMENTATION AMPLIFIER FEATURES DESCRIPTION • LOW OFFSET VOLTAGE: 50\|iV max T h e IN A 1 15 is a low cost, general purpose instru m en tation am plifier o ffering excellen t accuracy. Its versa	OCR Scan	INA115 115dB D3Dbc17	PDF
Zl11 Abstract: A12C Text: ADV MI CRO MEMORY 4ÔE » 0E5755Ö GÜ3 D4 b ö ö • AÎ1DM T—46—13-29 Advanced Micro Devices Am27C020 2 Megabit (262,144 x 8-Bit) CMOS EPROM DISTINCTIVE CHARACTERISTICS ■ 100% Flashrlte programming -typical programming time of 30 seconds Fast access time	OCR Scan	0E5755Ã T-46-13-29 Am27C020 28-pin 32-pln 27C020 DG304Ã 10205-006B Zl11 A12C	PDF
1001d Abstract: No abstract text available Text: CYPRESS PRELIMINARY C Y 7 C 95 4D X ATM HOTLink Transceiver Features technology, functionality, and integration over the field proven CY7B923/933 HOTLink. Second generation HOTLink technology UTOPIA level I and II compatible host bus interface Three-bit Multi-phy address capability built-in	OCR Scan	CY7B923/933 8B/10B 50-to-200 0G3G35Ã 709b0 1001d	PDF
Untitled Abstract: No abstract text available Text: ADV MICRO MEMORY MAE D Q257S2Û 0D304Ô4 b IA M D 4 T -4 6 -1 3 -2 9 Advanced Micro Devices Am27C2048 2 Megabit (131,072 x 16-Bit) CMOS EPROM DISTINCTIVE CHARACTERISTICS • ■ ■ ■ ■ Fast access time -v 100 ns Low power consumption - 25 mA typical CMOS standby current	OCR Scan	Q257S2Ã 0D304Ã Am27C2048 16-Bit) -40-pin 44-pin D257S2Ã D03DMn 05-006B	PDF
SGSP474 Abstract: No abstract text available Text: 30E t • 7iai237 0030021 S ■ _ / = 7 S G S - T H O M S O N 5 T ? ' ,H t " SM S G S P 4 7 4 ^ 7 # [ÜDffi Q [E[L[i(g¥^(ó)iD(gÍ SG SP 475 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V DSS ^DS(on) SGSP474 SGSP475 450 V 400 V 0.7 fi 0.55 fi	OCR Scan	7iai237 SGSP474 SGSP475 100kHz 0Q30Q33 SGSP474	PDF
28F010 Abstract: AM28F010 AMD 478 socket pinout Text: AD V MICRO MEMORY 4ÖE » G2S7S5Û Preliminary 0030715 T •AMD4 a T—46—13—27 Advanced Micro Devices Am28F010 131,072 x 8-Bit CMOS Flash Memory DISTINCTIVE CHARACTERISTICS ■ ■ ■ High performance - 90 ns maximum access time Low power consumption	OCR Scan	G030715 T-46-13-27 Am28F010 -32-Pin 32-Pin 100mA Am28F010-95C4JC Am28F010-95C3JC 28F010 AMD 478 socket pinout	PDF
Untitled Abstract: No abstract text available Text: KM 4 1 6 C 1 2 0 0 B T CMOS D R A M ELECTRONICS 1M x16B it CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh	OCR Scan	DQ0-DQ15 00303bS KM416C1200BT Tb4142 KM416C1200BT)	PDF
qml-38535 Abstract: CDFP2-F10 CQCC1-N20 GDFP1-F10 003001b Text: REVISIONS LTR DESCRIPTION DATE YR-MODA APPROVED Make change to interim electricals as specified in TABLE In accordance with N.O.R. 5962-R042-96. 96-01-17 M. A. FRYE Add case outline H and device type 02. Make changes to 1.2.2, 1.3, 1.4, TABLE I, and FIGURE 1. ro	OCR Scan	5962-R042-96. qml-38535 CDFP2-F10 CQCC1-N20 GDFP1-F10 003001b	PDF

Untitled Abstract: No abstract text available Text: N ANER PHILIPS/DISCRETE fc.'lE D bbSBTBl DQBDafciD SHI * A P X Philips Semiconductors Product Specification PowerMOS transistor Fast recovery diode FET GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in ISOTOP envelope. FREDFET with fast recovery	OCR Scan	OT227B BUK617-500AE/BE BUK617 0030fib4 1E-02	PDF
BLRM Abstract: TRANSISTOR FS 10 TM Text: N AMER PHILIPS/DISCRETE bb53T31 D03041fl bfi3 * A P X bRE D Product Specification Philips Semiconductors PowerMOS transistor BUK105-50L/S Logic level TOPFET_ BUK105-50LP/SP DESCRIPTION Monolithic temperature and overload protected logic level power	OCR Scan	bb53T31 D03041fl BUK105-50L/S BUK105-50LP/SP BUK105-50US lPS/lPS25 BLRM TRANSISTOR FS 10 TM	PDF
Untitled Abstract: No abstract text available Text: N AUER PHILIPS/DISCRETE bRE D bb53R31 003040? flTfl M A R X Product Specification Philips Semiconductors BUK104-50L/S BUK104-50LP/SP PowerMOS transistor Logic level TOPFET_ DESCRIPTION Monolithic temperature and overloadprotected logic level power MOSFET in a 5 pin plastic	OCR Scan	bb53R31 BUK104-50L/S BUK104-50LP/SP	PDF
Untitled Abstract: No abstract text available Text: N AUER PHI LIP S/ DIS CR ETE bRE D • bbS3R31 0D30727 33R « A P X Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mount applications.	OCR Scan	bbS3R31 0D30727 OT223 BUK482-60A QD3D731 bb53T31 D03D732 OT223.	PDF
Untitled Abstract: No abstract text available Text: N AMER PHILIPS/DISCRETE bTE ]> bbS3^31 Q03D70S 77fl W A P X Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a lastic envelope. he device is intended for use in	OCR Scan	Q03D70S O220AB BUK457-500B	PDF
Untitled Abstract: No abstract text available Text: N AMER PHILIPS/DISCRETE bRE D • bbS3R31 0D3QSbS 3fi0 * A P X Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in	OCR Scan	bbS3R31 BUK445-400B bbS3T31 bbS3131	PDF
Untitled Abstract: No abstract text available Text: Philips S em iconductors bbSHTBl Q0301Mb ATS M APX Product specification UHF push-pull power MOS transistor — •— BLF545 N AMER PHILIPS/DISCRETE FEATURES b^E D _ PIN CONFIGURATION • High power gain • Easy power control • Good thermal stability • Gold metallization ensures	OCR Scan	Q0301Mb BLF545 OT268 bb53T31 MCA828	PDF
Untitled Abstract: No abstract text available Text: ADV MICRO M E M O R Y 4ÛE D 025752Û DD3DSÛ3 ö T—46—13-25 Am27X512 Advanced Micro Devices 65,536 x 8-Bit CMOS ExpressROM Device DISTINCTIVE CHARACTERISTICS • ■ ■ As an OTP EPROM alternative: - Factory optimized programming - Fully tested and guaranteed	OCR Scan	Am27X512 KS000010 0205-005A	PDF
mcm6830 Abstract: EXORCISER motorola M68MM01A 7642T MC68B54 transistor bf 175 motorola application note 6809 6844 MMS1117 EXORCISER motorola M68MM01A2 Text: The MS800MM0S Support Elem ents Other NMOS MPUs MC3870 ^ MICROCOMPUTER COMPONENTS CMOS MCUS/ICUS MC14S00B, MC141000/1206 Bipolar 4-Blt slice MPU Fam ilies M2900 TTL , M10800 (MECL) nm os Memories RAM, EPROM, ROM CMOS Memories RAM, ROM MEMORY PRODUCTS Bipoiar Memories	OCR Scan	MS800MM0S MC3870 MC14S00B, MC141000/1206 M2900 M10800 M6800 MC14500B, MC141000/1200 mcm6830 EXORCISER motorola M68MM01A 7642T MC68B54 transistor bf 175 motorola application note 6809 6844 MMS1117 EXORCISER motorola M68MM01A2	PDF
transistor A 564 Abstract: 100-C BUK637-400B Text: N AflER P H I L I P S / D I S C R E T E Philips Semiconductors blE D • bbS3T31 DDBOfibS OHB W A P X - Product Specification PowerMOS transistor BUK637-400B Fast recovery diode FET_ GENERAL DESCRIPTION N-channel enhancement mode	OCR Scan	bbS3T31 BUK637-400B transistor A 564 100-C	PDF

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D03D Search Results

D03D Result Highlights (3)

D03D Price and Stock

Susumu Co Ltd RR0816P-1053-D-03D

Samtec Inc IPBD-03-D

Samtec Inc FFSD-03-D-08.00-01

Delta Electronics Inc DD03D2415A

Samtec Inc FFSD-03-D-03.94-01

D03D Datasheets Context Search

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BUK444-500B

P721

fccj

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Zl11

1001d

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SGSP474

28F010

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qml-38535

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BLRM

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mcm6830

transistor A 564