IRF460
Abstract: SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065
Text: Aerospace and Defense Products Short Form Catalog 2007 Welcome to the Aerospace and Defense Products Short Form Catalog. Inside is an overview of our product line including product specific information. To learn more, visit our web site at irf.com where you will find technical documents, data sheets for all products, application notes, design tips, technical papers, application-specific information,
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30am-5
44-0-1737-2com
DB8029C
IRF460
SMD TRANSISTOR MARKING k38
smd transistor k38
we 751002 s
SMD-6C
transistor smd k45
RAD-HARD igbt
IRF3504
afl2805s manufactured by international rectifier
550-065
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Untitled
Abstract: No abstract text available
Text: Case Outline and Dimensions - MO-038AB
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MO-038AB
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Abstract: No abstract text available
Text: PD-60022C IR2130D 3-PHASE DRIVER Features n Hermetic n Floating channel designed for bootstrap operation n n n n n n Fully operational to +400V Tolerant to negative transient voltage dV/dt immune Gate drive supply range from 10 to 20V Undervoltage lockout for all channels
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PD-60022C
IR2130D
IR2130D
MO038AB
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AN ir2130
Abstract: No abstract text available
Text: PD-60022D IR2130D 3-PHASE DRIVER Features n Hermetic n Floating channel designed for bootstrap operation n n n n n n Fully operational to +400V Tolerant to negative transient voltage dV/dt immune Gate drive supply range from 10 to 20V Undervoltage lockout for all channels
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PD-60022D
IR2130D
100mA
675ns
425ns
IR2130D
MO-038AB
AN ir2130
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irf5n5210sc
Abstract: IRHNA57064SCS IRHM597260 irf5n5210 irhna597160scs irhf7110scs IRHG57110 IRHNA57264SESCS 35CLQ045SCS 12CLQ150SCS
Text: PD - 94246A IRHG567110 RADIATION HARDENED 100V, Combination 2N-2P-CHANNEL RAD-Hard HEXFET POWER MOSFET 4# TECHNOLOGY THRU-HOLE MO-036AB Product Summary Part Number IRHG567110 IRHG563110 IRHG567110 IRHG563110 Radiation Level RDS(on) 100K Rads (Si)
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4246A
IRHG567110
MO-036AB)
IRHG563110
MO-036AB
O-254AA
22JGQ045SCV
irf5n5210sc
IRHNA57064SCS
IRHM597260
irf5n5210
irhna597160scs
irhf7110scs
IRHG57110
IRHNA57264SESCS
35CLQ045SCS
12CLQ150SCS
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transistor BC 458
Abstract: transistor BC 945 ac 1084 transistor bc 577 Transistor BC 585 MS-015-AB TRANSISTOR A42 bd 743 transistor uA109 CA 358 AE
Text: Hermetic Dimensional/Thermal Data The following table identifies all of the hermetic package configurations and pin counts per package type offered by National Semiconductor. In addition, the table provides dimensional and thermal data for each of the ceramic and
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MS011795
transistor BC 458
transistor BC 945
ac 1084
transistor bc 577
Transistor BC 585
MS-015-AB
TRANSISTOR A42
bd 743 transistor
uA109
CA 358 AE
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ir2130 application
Abstract: Drive circuit for IGBT using IR2130 power supply IRF830 APPLICATION pulse amplifier measurement IR2130D 4.1 amplifier circuit diagram application IR2130 high voltage diodes irf840 power supply Mosfet driver IR2130
Text: Data Sheet No. PD-6.022A IR2130D 3-PHASE BRIDGE Features nHermetic nFloatingchanneldesignedforbootstrap operation Fully operational to +400V Tolerant to negative transient voltage dV/dt immune n Gate drive supply range from 10 to 20V n Undervoltage lockout for all channels
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IR2130D
IR2130D
MO-038AB
ir2130 application
Drive circuit for IGBT using IR2130
power supply IRF830 APPLICATION
pulse amplifier measurement
4.1 amplifier circuit diagram
application IR2130
high voltage diodes
irf840 power supply
Mosfet driver IR2130
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Abstract: No abstract text available
Text: Case Outline and Dimensions - MO-038AB CIC
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MO-038AB
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10RIA10
Abstract: HFA40HF120 irfm9034 10RIA100 10RIA120 10RIA20 10RIA40 10RIA60 JANSR2N7261 70HF
Text: Index International Rectifier Government and Space Products Level of Quality Part Number Rectifiers Voltage Current CECC Issue Issue Assessment and CECC V (A) Specs Number Date 50 000 Screen Level Options Fax-on-Demand CECC-Qualifed, Europe Mfg. in Italy
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DO-203AA
HFA40HF120
HFA40HF60
O-254AA
HFA35HB120
HFA35HB120C
HFA35HB60
HFA35HB60C
O-258AA
HFA45HC120C
10RIA10
HFA40HF120
irfm9034
10RIA100
10RIA120
10RIA20
10RIA40
10RIA60
JANSR2N7261
70HF
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IRHNA57064SCS
Abstract: IRHNJ597230SCS IRHNJ9130SCS IRHG6110SCS IRHY7434 IRHE57130SCS 8CLJQ045SCV IRHNJ57034SCS irfy9230 35CLQ045SCS
Text: PD - 94046B RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-0.5 IRHNJ597230 200V, P-CHANNEL 4# TECHNOLOGY c Product Summary Part Number Radiation Level IRHNJ597230 100K Rads (Si) IRHNJ593230 300K Rads (Si) RDS(on) 0.505Ω 0.505Ω ID -8.0A -8.0A SMD-0.5
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94046B
IRHNJ597230
IRHNJ593230
O-254AA
22JGQ045SCV
22GQ100SCV
25GQ045SCS
IRHNA57064SCS
IRHNJ597230SCS
IRHNJ9130SCS
IRHG6110SCS
IRHY7434
IRHE57130SCS
8CLJQ045SCV
IRHNJ57034SCS
irfy9230
35CLQ045SCS
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IR2130D
Abstract: 81 221
Text: IR2130D Case Outline and dimensions 28 Pin Dip Package Conforms to JEDEC Outline MO-038AB WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: 310 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: + 44 1883 732020
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IR2130D
MO-038AB
IR2130D
81 221
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mosfet IRF450
Abstract: CA50 IR2130 IR2130D IRF450 IRF820 IRF830 IRF840 MO-038
Text: PD-60022B IR2130D 3-PHASE DRIVER Features n Hermetic n Floatingchanneldesignedforbootstrap n n n n n n operation Fully operational to +400V Tolerant to negative transient voltage dV/dt immune Gate drive supply range from 10 to 20V Undervoltage lockout for all channels
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PD-60022B
IR2130D
IR2130D
ground52-7105
mosfet IRF450
CA50
IR2130
IRF450
IRF820
IRF830
IRF840
MO-038
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transistor BC 458
Abstract: transistor a42 MO-003 transistor Bc 540 ua109a CERAMIC PIN GRID ARRAY CPGA lead frame transistor bc 577 W144A UA65A CERAMIC QUAD FLATPACK CQFP
Text: Hermetic Dimensional/Thermal Data The following table identifies all of the hermetic package configurations and pin counts per package type offered by National Semiconductor. In addition, the table provides dimensional and thermal data for each of the ceramic and
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Untitled
Abstract: No abstract text available
Text: PD-60022D IR2130D 3-PHASE DRIVER Features n Hermetic n Floating channel designed for bootstrap operation n n n n n n Product Summary Fully operational to +400V Tolerant to negative transient voltage dV/dt immune Gate drive supply range from 10 to 20V Undervoltage lockout for all channels
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PD-60022D
IR2130D
IR2130D
MO-038AB
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IRGAC50
Abstract: MO036AA IRGAC50U IRGAC50F
Text: HU m saa In t e r n a t i o n a l R e c t i f i e r Government and Space Products Control Integrated Circuits Vs Offset Supply Voltage Volts PMt Number Fax-onDemand Number lOUT VBS.VCC SupplyVoltage (Volts) Slnk, Source (Amps) Case Style, (CaseOutline) (1)
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IR2110E
IR2110E6
IR2110L
IR2110L6
IR2125Z
10to20
250mA
IRGAC50
MO036AA
IRGAC50U
IRGAC50F
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ansi y14.5m
Abstract: tolerancing MO038AB MO-038AB
Text: Case Outline and Dimensions - MO-038AB CIC NOTES: 1 DIMENSIONING & TOLERANCING PE R ANSI Y 14.5M . 1 9 8 2 . 2 CONTROLLING DIMENSION : INCH. 3 DIMENSIONS ARE SHOW N IN MILLIMETERS (IN C H E S ). [ 4] DIMENSION IS TO CENTER OF LEADS WHEN FORMED PARALLEL.
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MO-038AB
MO-038AB.
ansi y14.5m
tolerancing
MO038AB
MO-038AB
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