AXE switch ERICSSON commands
Abstract: The SDH interface in AXE axe 10 ETC5 SDXC protocol ericsson msc et bsc ericsson bts operation and maintenance Mobile switching center ericsson smux 155 Transit Switching Center ericsson SDXC
Text: The SDH interface in AXE Jan Hopfinger, Ohan Khodaverdian and Erik Saure The SDH standard was formulated to alleviate the shortcomings operators faced in PDH, and was originally introduced into transmission networks. Today, however, given a more widespread use of SDH transport networks, it makes
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byb 501
Abstract: BYB 202 AXE switch ERICSSON BYB 501 220 installation cabinet byb 202 ericsson bsc RPB 202 connect ericsson bsc to msc Ericsson Core Network BSC ERICSSON
Text: New hardware in AXE – The group switch Ulf Hansson and Terenzio Paone Within the framework of the most recent AXE hardware development programme, products that relate to the group switch subsystem GSS have been rationalised extensively. The main objectives of this work – which
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N-6820
Abstract: No abstract text available
Text: Agilent N6841A RF Sensor for Signal Monitoring Networks Data Sheet It’s a big spectrum out there, and you need serious help to sort it all out… Key Features • Environmentally rugged IP67-rated weatherproof enclosure. Sealed unit with no moving internal parts
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N6841A
IP67-rated
5990-3839EN
N-6820
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byb 501
Abstract: ericsson msc et bsc IOG11 IOG20 et155 axe 10 ETC5 AXE switch ERICSSON BLOCK DIAGRAM AXE switch ERICSSON STP ericsson IOG11 ethernet
Text: GDM-based generation of AXE core switching devices Jan Hopfinger and Björn Sundelin The generic device magazine concept was developed to fully exploit the advantages of the rationalized group switch and AXE core switching devices. The idea of a standard, equipped magazine has evolved to promote
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M2SK3295
Abstract: M2SK3354 2SK2499 2SK3296 M2SK3355 umos varistor 2754 2SK3355 PA1700A PA1707
Text: LINEUP POWER MOSFET SERIES UMOS II Kazuhiro Yamada UMOS I process Planar process G S i UMOS II process G S S G n+ n+ n+ p p p n- n- n- n+ n+ i D i D n+ D Fig. 1 Cross Sectional View of Cell Structure Ron Ω N channel VDSS: 60 V Package: TO-220 RDS(on) indicates the TYP value
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O-220
2SK2499
2SK2826
2SK3355
PA1855
0V/23m
2SK3295
2SK3296
2SK3365
2SK3367
M2SK3295
M2SK3354
2SK2499
M2SK3355
umos
varistor 2754
2SK3355
PA1700A
PA1707
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HPMX-3002
Abstract: No abstract text available
Text: Silicon Bipolar RFIC 900 MHz Driver Amplifier Technical Data HPMX-3002 Features • RFIC Medium Power Amplifier • 150-960 MHz Operating Range • +22 dBm Typ. PldB , +23 dBm Typ. Psat @ 900 MHz • 50 dB Typ. Power Control Range • 6 V, 160 mA Operation
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HPMX-3002
HPMX-3002
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HPMX3002
Abstract: HPMX-3002
Text: Silicon Bipolar RFIC 900 MHz Driver Amplifier Technical Data HPMX-3002 Features Plastic S0-8 Package • RFIC Medium Power Amplifier • 150-960 MHz Operating Range • +22 dBm Typ. PldB , +23 dBm Typ. Psat @ 900 MHz • 50 dB Typ. Power Control Range • 6 V, 160 mA Operation
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HPMX-3002
HPMX-3002
5962-8452E
5965-9661E
HPMX3002
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MHW707-2
Abstract: MHW707-1 MRF947T1 equivalent mhw704 CR2428 MHW591 MHW592 MHW593 MHW707 MRF861
Text: RF Products In Brief . . . While Motorola is considered to be the supermarket for semiconductor products, there is not a category in which the selection is more diverse, or more complete, than in products designed for RF system applications. From MOS, bipolar
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714U/1
MHLW8000
MHW707-2
MHW707-1
MRF947T1 equivalent
mhw704
CR2428
MHW591
MHW592
MHW593
MHW707
MRF861
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Untitled
Abstract: No abstract text available
Text: Silicon Bipolar RFIC 900 MHz Driver Amplifier Technical Data HPMX-3002 Features • RFIC Medium Power Amplifier • 150-960 MHz Operating Range • +22 dBm Typ. PldB , +23 dBm Typ. Psat @ 900 MHz • 50 dB Typ. Power Control Range • 6 V, 160 mA Operation
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HPMX-3002
HPMX-3002
provid02
5962-8452E
5965-9661E
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Untitled
Abstract: No abstract text available
Text: FH101-G High Dynamic Range FET Applications • • • • Mobile Infrastructure CATV / DBS W-LAN / ISM Defense / Homeland Security SOT-89 Package Product Features • • • • • • • • Product Features 50 – 4000 MHz Low Noise Figure 18 dB Gain
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FH101-G
OT-89
FH101-G
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SKY77526
Abstract: SKY77512-xx sky77526-xx S1336 S1337 S-1340 SKY*NP sky77512 sky77506
Text: PRELIMINARY DATA SHEET SKY65329-NP: 900 MHz Front-End Module Applications Description • Paging Skyworks SKY65329-NP is a fully matched, high-efficiency RF Front-End Module FEM with 900 MHz transmit and receive paths. There are also routing switches to connect auxiliary
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SKY65329-NP:
SKY65329-NP
00995A
SKY77526
SKY77512-xx
sky77526-xx
S1336
S1337
S-1340
SKY*NP
sky77512
sky77506
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Untitled
Abstract: No abstract text available
Text: SiA537EDJ www.vishay.com Vishay Siliconix N-Channel 12 V D-S and P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel RDS(on) () MAX. ID (A) 0.028 at VGS = 4.5 V 4.5 a 0.033 at VGS = 2.5 V 4.5 a 0.042 at VGS = 1.8 V 4.5 a 0.054 at VGS = -4.5 V
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SiA537EDJ
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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2SK410
Abstract: No abstract text available
Text: High-Gain, High-Output RI7 Power MOS FET Series ain Uses Features • Mobile com m unication • High power, high gain, high effi base stations, broadcasting ciency stations, relay sta • Tw o-elem ent pack tions, wireless equip ages suitable for pushH ig h ga in , h i g h e f f i
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2SK2216
2SK2217
2SK2216)
2SK410
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Untitled
Abstract: No abstract text available
Text: fax id: 3522 CY2252 Mobile Pentium Processor Compatible Clock Synthesizer/Driver Features • Multiple clock outputs to meet requirements of mobile systems using Pentium™ processors — Five CPU clocks @ 66.66 MHz, 60.0 MHz, 50.0 MHz or 33.33 MHz pin selectable
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CY2252
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ior 481 mosfet
Abstract: marking XF n channel mosfet IOR MOSFET
Text: P D - 91746 P D - 91747 In te rn a tio n a l Rectifier IRF7805/IRF7807 ICR PRELIMINARY HEXFET Chip-Set for DC-DC Converters • • • • N Channel Application Specific MOSFETs Ideal for Mobile DC-DC Converters Low Conduction Losses Low Switching Losses
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IRF7805/IRF7807
IRF7805/IRF7807
IRF7807
ior 481 mosfet
marking XF n channel mosfet
IOR MOSFET
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42A9
Abstract: No abstract text available
Text: Thai H E W L E T T ' mL'HA PA C K A R D Silicon Bipolar RFIC 900 MHz Driver Amplifier Technical Data HPMX-3002 Features • EFIC Medium Power Amplifier • 150-960 MHz Operating Range • +22 dBm Typ. P mb , +23 dBm Typ. Psat @ 900 MHz • 50 dB Typ. Power Control
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HPMX-3002
HPMX-3002
0-45J0
42A9
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X-3002
Abstract: No abstract text available
Text: Who1 H E W L E T T münÆ P A C K A R D Silicon Bipolar RFIC 900 MHz Driver Amplifier Technical Data HPMX-3002 Features • RFIC Medium Power Amplifier • 150-960 MHz Operating Range • +22dBmTyp.PldB, +23 dBm TyP psat@900 MHz • 50 dB Typ. Power Control
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HPMX-3002
22dBmTyp
HPMX-3002
X-3002
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Untitled
Abstract: No abstract text available
Text: Whß1 H E W L E T T WLUM PA C K A R D Silicon Bipolar RFIC 900 MHz Driver Amplifier Technical Data HPMX-3002 F eatures • RFIC Medium Power Amplifier • 150-960 MHz Operating Range • +22 dBm Typ. PldB , +23 dBm Typ. Psat @ 900 MHz • 50 dB Typ. Power Control
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HPMX-3002
5962-8452E
5965-9661E
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Untitled
Abstract: No abstract text available
Text: What wL'tiM HEW LETT PACKARD Silicon Bipolar RFIC 900 MHz Driver Amplifier Technical Data HPMX-3002 Features • RFIC M edium Pow er Am plifier • 150-960 MHz O perating Range • +22 dBm Typ. Phk , +23 dBm Typ. P sat @ 900 MHz • 50 dB Typ. Pow er Control
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HPMX-3002
5962-8452E
D11474
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field E ffect Transistor MRF5035 N-Channel Enhancement-Mode Designed for broadband commercial and industrial applications at frequen cies to 520 MHz. The high gain and broadband performance of this device
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MRF5035
AN215A,
MRF5035.
AN721,
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gamma
Abstract: No abstract text available
Text: S E M I C O N D U C T O R rest i W I R E L E S S U U / C O M M U N I C A T I O N S . I N C TQ9122N Block Diagram Low-Noise Amplifier Features • 100 -2500 MHz operation Product Description The TQ9122 Low-Noise Amplifier is part of TriQuint's MMIC Downconverter Building Block
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TQ9122N
TQ9122
to44-3535
TQ9122N
gamma
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MAR 544 MOSFET TRANSISTOR
Abstract: J 6920 FET MAR 740 MOSFET TRANSISTOR LA 7814 RD70HVF 7907 mitsubishi RD70HVF1 7386 mos transistor d 2689 MOSFET 2095 transistor
Text: ATTENTION OBSERVE PRECAUTIONS FOR HANDLING Revision date:4th/Mar/02 MITSUBISHI RF POWER MOS FET ELHTROSTATIC SENSITIVE DEVICES RD70HVF1 Silicon MOSFET Power Transistor,! 75MHz70W 520MHz50W DESCRIPTION OUTLINE DRAWING RD70HVF1 is a MOS FET type transistor specifically
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4th/Mar/02
RD70HVF1
75MHz70W
520MHz50W
RD70HVF1
175MHz
520MHz
MAR 544 MOSFET TRANSISTOR
J 6920 FET
MAR 740 MOSFET TRANSISTOR
LA 7814
RD70HVF
7907 mitsubishi
7386 mos
transistor d 2689
MOSFET 2095 transistor
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mrf5015
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF5015 N-Channel Enhancement-Mode Designed for broadband commercial and industrial applications at frequen cies to 520 MHz. The high gain and broadband performance of this device
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MRF5015
AN215A,
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Untitled
Abstract: No abstract text available
Text: 2 3 11 T R I Q P WIRELESS U I N T S E M I C O N D U C T O R , I N C C É M b k iï COMMUNICATIONS TQ9122N Block Diagram Low-Noise Amplifier Features Product Description • The TQ 9122 Low -N oise A m plifie r is part of TriQ uint's M M IC D ow nconverter B u ilding
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TQ9122N
TQ9122N
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