ICL7660S
Abstract: ICL7660 equivalent HI7188 ICL7660
Text: Using the HI7188 with a Single Supply Application Note May 1996 AN9620 Author: John D. Norris Introduction ICL7660S Voltage Converter The HI7188 is an easy-to-use, 16-bit, 8-channel, sigma-delta A/D subsystem ideal for low frequency physical and electrical
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HI7188
AN9620
ICL7660S
16-bit,
ICL7660 equivalent
ICL7660
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icl7660 harris
Abstract: HI7188 ICL7660 ICL7660S ICL7660 equivalent
Text: Harris Semiconductor No. AN9620 Harris Data Acquisition May 1996 Using the HI7188 with a Single Supply Author: John D. Norris Introduction ICL7660S Voltage Converter The HI7188 is an easy-to-use, 16-bit, 8-channel, sigma-delta A/D subsystem ideal for low frequency physical and electrical
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AN9620
HI7188
ICL7660S
16-bit,
1-800-4-HARRIS
icl7660 harris
ICL7660
ICL7660 equivalent
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TH58NVG2S3BTG00
Abstract: th58nvg th58nvg2s3btg TH58NVG2S3 PSL 26 DIN2111 PA15 PA16 th58nvg*t TH58NVG2S3B
Text: TH58NVG2S3BTG00 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 4 GBIT 512M x 8 BIT CMOS NAND E PROM Lead-Free DESCRIPTION The TH58NVG2S3B is a single 3.3 V 4Gbit (4,429,185,024 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 4096 blocks.
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TH58NVG2S3BTG00
TH58NVG2S3B
2112-byte
004-08-20A
TH58NVG2S3BTG00
th58nvg
th58nvg2s3btg
TH58NVG2S3
PSL 26
DIN2111
PA15
PA16
th58nvg*t
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CI 4066 vol
Abstract: 74HCT logic family specifications HCT CMOS family characteristics 74HCMOS MGK563 hcmos family CI 4016 74HCT Logic Family Specification CMOS Logic Family Specifications F TTL family characteristics
Text: INTEGRATED CIRCUITS DATA SHEET FAMILY SPECIFICATIONS HCMOS family characteristics March 1988 File under Integrated Circuits, IC06 Philips Semiconductors FAMILY SPECIFICATIONS HCMOS family characteristics A subset of the family, designated as XX74HCTXXXXX,
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XX74HCTXXXXX,
74HC/HCT/HCU
74HCU
74HCT
CI 4066 vol
74HCT logic family specifications
HCT CMOS family characteristics
74HCMOS
MGK563
hcmos family
CI 4016
74HCT Logic Family Specification
CMOS Logic Family Specifications
F TTL family characteristics
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transistor KSD1 105
Abstract: No abstract text available
Text: SPLC701B 11x12 and 6x12 Text and Graphics Liquid Crystal Display Controller/Driver JAN. 05, 2005 Version 1.3 Sunplus Technology reserves the right to change this documentation without prior notice. Information provided by Sunplus Technology is believed to be
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SPLC701B
11x12
transistor KSD1 105
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KSD1 180
Abstract: KSD1 65
Text: SPLC701B 11x12 and 6x12 Text and Graphics Liquid Crystal Display Controller/Driver MAY. 17, 2005 Version 1.5 Sunplus Technology reserves the right to change this documentation without prior notice. Information provided by Sunplus Technology is believed to be
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SPLC701B
11x12
KSD1 180
KSD1 65
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TC58DVM92A3TA00
Abstract: TC58DVM92A3
Text: TC58DVM92A3TA00 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 512-MBIT 64 M x 8 BITS CMOS NAND E PROM DESCRIPTION The device is a single 3.3 V 512-Mbit (553,648,128 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes × 32 pages × 4096 blocks. The device has a 528-byte
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TC58DVM92A3TA00
512-MBIT
528-byte
528-byte
TC58DVM92A3TA00
TC58DVM92A3
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TC58DVM92A5BAJ3
Abstract: TC58DVM92A5 TC58DVM92A
Text: TC58DVM92A5BAJ3 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 512-MBIT 64M x 8 BITS CMOS NAND E PROM DESCRIPTION The device is a single 3.3 V 512Mbit (553,648,128 bit) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes × 32 pages × 4096 blocks. The device has a 528-byte static
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TC58DVM92A5BAJ3
512-MBIT
512Mbit
528-byte
TC58DVM92A5BAJ3
TC58DVM92A5
TC58DVM92A
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MOS 4016
Abstract: T4016B T40-16B
Text: A dvanced P ow er Te c h n o l o g y A P 400 ' 4016 T B V R 27A 0 160 2 V . Í POWER MOS V Power MOS V is a new generation of high voltage N-Channei enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V
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O-247
APT4016BVR
MIL-STD-75Q
O-247AD
MOS 4016
T4016B
T40-16B
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c 64016
Abstract: AY-6-4016
Text: Gl M U A I INST RI M l M AY-5-1016 AY-6-4016 Random/Sequential Access Multiplexers FEATURES • ■ ■ ■ ■ D ire ctly interfaces w ith T T L /D T L and MOS C urre n t o r voltage m odes o f operation Random o r sequential access S ingle ended o r diffe re ntia l operation
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AY-5-1016
AY-6-4016
AY-5-1016
AY-6-4016
c 64016
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4016 ic
Abstract: No abstract text available
Text: COS/MOS INTEGRATED CIRCUIT QUAD • • • • • • • • • • • • • • • A o \ t , * > h c c îh c f « m b B IL A T E R A L S W IT C H 20V D IG IT A L OR ± 10V P E A K -T O -P E A K SW ITCHING 2 8 0 « T Y P IC A L ON RESISTANCE FOR 15V O PE R ATIO N
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10kHz,
4016B
CF4016B
4016 ic
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IC 4016 PIN DIAGRAM
Abstract: pin diagram of ic 4016 ic 4016 CI 4016 4016be for IC 4016 HA 4016 MOS 4016 4016 PIN DIAGRAM hct 4016
Text: COS/MOS , INTEGRATED CIRCUIT A a , h c c /h c f « H 6 B Q U A D B IL A T E R A L SWITCH • • • • • • • • • • • • • • • 2 0 V D IG IT A L O R ± 1 0 V P E A K -T O -P E A K S W IT C H IN G 2 8 0 n T Y P IC A L O N R E S IS T A N C E FO R 15 V O P E R A T IO N
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10I2fi
-MCF40I6B
-HCFC016B
IC 4016 PIN DIAGRAM
pin diagram of ic 4016
ic 4016
CI 4016
4016be
for IC 4016
HA 4016
MOS 4016
4016 PIN DIAGRAM
hct 4016
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Untitled
Abstract: No abstract text available
Text: R&E INTERNATIONAL, INC 441GB CMOS QUAD ANALOG SWITCH FEATURES ♦ DPDT Switch Operation W ithout External Logic ♦ Wide Range of Digital and Analog Signal Levels — Digital or Analog Signal to 18 Volts peak ♦ Low ON Resistance — 200 Q typ. over 15Vp.p Signal Input Range,
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441GB
Curren90
4416B
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vlf 12.5 kHz schematic
Abstract: 4416B 4000B 4016B MAXIMUM ANALOG SWITCH DPDT
Text: 4416B INTERNATIONAL, INC. CMOS QUAD ANALOG SWITCH FEA TU R ES ♦ DPDT Switch Operation Without External Logic ♦ Wide Range of Digital and Analog Signal Levels — Digital or Analog Signal to 18 Volts peak ♦ Low ON Resistance — 200 f í typ. over 15Vp.p Signal Input Range,
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4416B
10kf2
vlf 12.5 kHz schematic
4416B
4000B
4016B
MAXIMUM ANALOG SWITCH DPDT
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ferranti array
Abstract: No abstract text available
Text: MH SERIES FERRANTI INTERDESIGN, INC. HIGH VOLTAGE SILICON GATE CMOS ARRAYS FEATURES • Oxide Isolated Polysilicon Gate CM OS Technology. • 3V to 15V Specified Operating Voltage. • Operation up to 40MHz at 15V, 15MHz at 5V. • 8 Arrays Ranging from 70 to 1600 Two Input
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40MHz
15MHz
ferranti array
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SGS-ATES l120
Abstract: National Semiconductor 4045 transistor bf 175 TAA611
Text: PROFESSIONAL SEMICONDUCTOR INTRODUCTION This databook contains data sheets on the SGS-ATES range of linear, MOS and COS/MOS integrated circuits intended for professional applications. The information on each product has been specially presented in order that the
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TH58512FT
Abstract: No abstract text available
Text: TOSHIBA TH58512FT TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TENTATIVE 512-MBIT 64M X SILICON GATE CMOS 8 BITS CMOS NAND E2PROM DESCRIPTION The TH58512 is a single 3.3-V 512-Mbit (553,648,128) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes X 32 pages X 4096 blocks.
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TH58512FT
512-MBIT
TH58512
528-byte
TH58512FT
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TSOP 48 Package nand memory toshiba
Abstract: 1076H CD 4016 PIN DIAGRAM TH58512FTI TH58512FT
Text: TH58512FTI TOSHIBA TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT 512-MBIT 64M SILICON GATE CMOS X 8 BITS CMOS NAND E2PROM DESCRIPTION The TH58512 is a single 3.3-V 512-Mbit (553,648,128) bit NAND Electrically E rasable and Programmable Read-Only Memory (NAND E 2PROM) organized as 528 bytes X 32 pages X 4096 blocks.
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TH58512FTI
512-MBIT
TH58512
528-byte
TSOP 48 Package nand memory toshiba
1076H
CD 4016 PIN DIAGRAM
TH58512FTI
TH58512FT
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TH58512FT
Abstract: No abstract text available
Text: TOSHIBA TH58512FT TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TENTATIVE SILICON GATE CMOS 512-MBIT 64M X 8 BITS CMOS NAND E2PROM DESCRIPTION The TH58512 is a single 3.3-V 512-Mbit (553,648,128) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes X 32 pages X 4096 blocks.
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TH58512FT
512-MBIT
TH58512
528-byte
48-P-1220-0
TH58512FT
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74LS189 equivalent
Abstract: 74LS200 AmZ8036 Z8104 74LS300 AM9511 Am2505 27s13 54S244 27LS00
Text: Advanced Micro Devices Condensed Catalog 1981 Advanced Micro Devices, Inc. Advanced Micro Devices reserves the right to make changes in its products without notice in order to improve design or performance characteristics. The company assumes no responsibility for the use of any circuits described herein.
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AMD-599
LM101
SN54LS01
132nd
74LS189 equivalent
74LS200
AmZ8036
Z8104
74LS300
AM9511
Am2505
27s13
54S244
27LS00
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PDF
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internal structure of ic 4017
Abstract: 4518 CI
Text: C2MOS Logic TC74HC/HCT Series 7. Common Electrical Characteristics 7-1 Power Dissipation The power dissipation of CMOS device is composed of two components: one static, the other dynamic.The total power dissipation is the sum of static and dynamic power dissipation.
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TC74HC/HCT
internal structure of ic 4017
4518 CI
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internal structure of ic 4017
Abstract: 4518 CI increase the output of Ic 4017 4511 e 4518 CI
Text: 7. COMMON ELECT RICAL CHARACTERISTICS 7 -1 Pow er Dissipation The power dissipation of CMOS device is com posed of two com ponents: one static, the other dynam ic. The total power dissipation is the sum of static and dynam ic power dissipation. Static power dissipation is obtained by m ultiplying quiescent supply current by the supply voltage
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HC-88
Abstract: hc81
Text: 7. COMMON E L E C T R IC A L C H A R A C T E R IS T IC S 7-1 Powtr Dissipation T h e pow er d issip a tio n of CMOS device is com posed of tw o com ponents: one s ta tic , the o th e r d y n am ic. T h e to ta l pow er d issip a tio n is the B u m of sta tic a n d d y n a m ic pow er d issip atio n .
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HC-90
HC-88
hc81
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ic 6116 from texas instruments
Abstract: ma 6116 f6 transistor tic 2250 4016 static ram tms4016
Text: MILITARY CM O S SMJ5517 2048 WORD BY 8-BIT STATIC RAM LSI DECEMBER 1 9 8 3 SMJ5517 . . . JD PACKAGE 1 TOP VIEW 2K X 8 Organization. Common I/O Single + 5 -V Supply • Fully Static Operation (No Clocks, No Refresh) A7 C 1 ^ 2 4 H vcc 23 ] A 8 22 U A 9 21 D W
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SMJ5517
24-Pin
600-M
B8416.
TC5517
54S/74S,
54LS/74LS
54ALS/74ALS
SMJ5517
ic 6116 from texas instruments
ma 6116 f6
transistor tic 2250
4016 static ram
tms4016
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