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    MOS FET 120V Search Results

    MOS FET 120V Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPHR7404PU Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOS-H Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    MOS FET 120V Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 2SK3218-01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET Features TO-220AB High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply DC-DC converters


    Original     		PDF 2SK3218-01 O-220AB

    Untitled

    Abstract: No abstract text available
    Text: 2SK3218-01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET Features TO-220AB High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply DC-DC converters


    Original     		PDF 2SK3218-01 O-220AB

    Diode IDF

    Abstract: L420 2SK3218-01
    Text: 2SK3218-01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET Features TO-220AB High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply DC-DC converters


    Original     		PDF 2SK3218-01 O-220AB Diode IDF L420 2SK3218-01

    Untitled

    Abstract: No abstract text available
    Text: 2SK3219-01MR FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET Features TO-220F15 High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators 2.54 UPS Uninterruptible Power Supply DC-DC converters


    Original     		PDF 2SK3219-01MR O-220F15

    Untitled

    Abstract: No abstract text available
    Text: 2SK3219-01MR FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET Features TO-220F15 High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators 2.54 UPS Uninterruptible Power Supply DC-DC converters


    Original     		PDF 2SK3219-01MR O-220F15

    2SK3218-01

    Abstract: 2SK3219-01MR
    Text: 2SK3219-01MR FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET Features TO-220F15 High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators 2.54 UPS Uninterruptible Power Supply DC-DC converters


    Original     		PDF 2SK3219-01MR O-220F15 2SK3218-01 2SK3219-01MR

    2SK3219-01MR

    Abstract: L420
    Text: 2SK3219-01MR FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET Features TO-220F15 High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators 2.54 UPS Uninterruptible Power Supply DC-DC converters


    Original     		PDF 2SK3219-01MR O-220F15 2SK3219-01MR L420

    Untitled

    Abstract: No abstract text available
    Text: Power F-MOS FETs 2SK3036 Tentative Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown ● Low-voltage drive ● High electrostatic breakdown voltage


    Original     		PDF 2SK3036

    2SK3037

    Abstract: No abstract text available
    Text: Power F-MOS FETs 2SK3037 Tentative Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown ● Low-voltage drive ● High electrostatic breakdown voltage


    Original     		PDF 2SK3037 2SK3037

    2SK3037

    Abstract: No abstract text available
    Text: Power F-MOS FETs 2SK3037 Tentative Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown ● Low-voltage drive ● High electrostatic breakdown voltage


    Original     		PDF 2SK3037 2SK3037

    2SK3037

    Abstract: No abstract text available
    Text: Power F-MOS FETs 2SK3037 Tentative Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown ● Low-voltage drive ● High electrostatic breakdown voltage


    Original     		PDF 2SK3037 2SK3037

    Untitled

    Abstract: No abstract text available
    Text: Power F-MOS FETs 2SK3036 Tentative Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown ● Low-voltage drive ● High electrostatic breakdown voltage


    Original     		PDF 2SK3036

    5A diode

    Abstract: 2SK3037
    Text: Power F-MOS FETs 2SK3037 Tentative Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown ● Low-voltage drive ● High electrostatic breakdown voltage


    Original     		PDF 2SK3037 5A diode 2SK3037

    Untitled

    Abstract: No abstract text available
    Text: Power F-MOS FETs 2SK3037 Tentative Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown ● Low-voltage drive ● High electrostatic breakdown voltage


    Original     		PDF 2SK3037

    Untitled

    Abstract: No abstract text available
    Text: Power F-MOS FETs 2SK3037 Tentative Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown ● Low-voltage drive ● High electrostatic breakdown voltage


    Original     		PDF 2SK3037

    2SK3036

    Abstract: No abstract text available
    Text: Power F-MOS FETs 2SK3036 Tentative Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown ● Low-voltage drive ● High electrostatic breakdown voltage


    Original     		PDF 2SK3036 2SK3036

    2SK3035

    Abstract: No abstract text available
    Text: Power F-MOS FETs 2SK3035 Tentative Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown ● Low-voltage drive ● High electrostatic breakdown voltage


    Original     		PDF 2SK3035 2SK3035

    2SK3035

    Abstract: 2A DIODE
    Text: Power F-MOS FETs 2SK3035 Tentative Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown ● Low-voltage drive ● High electrostatic breakdown voltage


    Original     		PDF 2SK3035 2SK3035 2A DIODE

    Untitled

    Abstract: No abstract text available
    Text: Power F-MOS FETs 2SK3035 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown ● Low-voltage drive ● High electrostatic breakdown voltage unit: mm


    Original     		PDF 2SK3035

    2SK1506

    Abstract: SC-65 A2216 2SK1506 equivalent
    Text: 2SK1506 FUJI POWER MOS-FET IJ-CHANNEL SILICON POWER MOS-FET F-III SERIES • Featu res Outline Drawings '* High current # Low no-resistance «»Low driving power liHigh forward Transconductance 111Applications «I»Motor controllers ■iGenaral purpose power amplifier


    OCR Scan     		PDF 2SK1506 SC-65 VOS-10V A2-216 2SK1506 SC-65 A2216 2SK1506 equivalent

    MP6101

    Abstract: n channel fet array
    Text: MP6101 POWER MOS FET MODULE SILICON N CHANNEL MOS TYPE 7T-MOS FET 6 IN 1 HIGH POWER SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS MOTOR DRIVE APPLICATIONS. •Pack a g e w i t h Heat Sink Isolated Lead. . H i g h D rain P o wer Dissipation. : P T =120W


    OCR Scan     		PDF MP6101 300yA Ta-25 Drain940 100/i MP6101 n channel fet array

    C 5388

    Abstract: TFK U 216 B 2SK1506 TFK 03 Diode SC-65 diode s .* tfk TFK S
    Text: 2SK1506 FUJI POWER MOS-FET U-CHANNEL SILICON POWER MOS-FET F-III SERIES • Features Outline Drawings "»High current <i*Low no-resistance «»Low driving power #High forward Transconductance III Applications •>Motor controllers ■«»Genaral purpose power amplifier


    OCR Scan     		PDF 2SK1506 SC-65 C 5388 TFK U 216 B 2SK1506 TFK 03 Diode SC-65 diode s .* tfk TFK S

    APC UPS es 500 CIRCUIT DIAGRAM

    Abstract: sk 100 gale 065 tf 2SK1058 MOSFET APPLICATION NOTES APC UPS CIRCUIT DIAGRAM es 725 General Instrument data book 2SK2264 ESI 252 impedance meter transistor bf 175 PF0144 2SK212
    Text: Hitachi Power MOS FET DATA BOOK HITACHI ADE-408 CONTENTS • Index. 5 ■ General Information.


    OCR Scan     		PDF ADE-408 50502C APC UPS es 500 CIRCUIT DIAGRAM sk 100 gale 065 tf 2SK1058 MOSFET APPLICATION NOTES APC UPS CIRCUIT DIAGRAM es 725 General Instrument data book 2SK2264 ESI 252 impedance meter transistor bf 175 PF0144 2SK212

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MP4703 TOSHIBA PO W ER MOS FET MODULE SILICON N CHANNEL MOS TYPE L2-tt-MOS]V 4 IN 1 MP4703 INDUSTRIAL APPLICATIONS Unit in mm HIGH PO W ER, HIGH SPEED SWITCHING APPLICATIONS. H AM M ER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE LOAD SWITCHING. 31.5 ±0.2


    OCR Scan     		PDF MP4703 0-20H