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    MOS P-CHANNEL SOT23 Search Results

    MOS P-CHANNEL SOT23 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    PQU650-12P Murata Manufacturing Co Ltd AC/DC 650W, 6”X4” U-CHANNEL, 12V O/P Visit Murata Manufacturing Co Ltd
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MOS P-CHANNEL SOT23 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: T em ic Semiconductors S08 DMOS FETs T0220 T052 TO237 T092 2 lead T092 (3 lead) Low-Power MOS N-Channel Enhancement-Mode (continued) DMOS FETs - Low-Power MOS P-Channel Enhancement-Mode j mm>xm Ì Q K ? Ì |g ir ( M ) 14-Pin Sidebraze (P) and Plastic (J)


    OCR Scan     		T0220 14-Pin VQ2001J VQ200IP VQ2004J T0236 TP0101T TP0202T TP06I0T VP06I0T PDF

    Transistor W35

    Abstract: No abstract text available
    Text: Product specification WPM3005 Single P-Channel, -30V, -4.1A, Power MOSFET VDS V Rds(on) (ȍ) 0.057@ VGS=̢10.0V 0.057@ VGS=̢10.0V -30 0.083@ VGS=̢4.5V 0.083@ VGS=̢4.5V SOT-23-3L Descriptions D 3 The WPM3005 is P-Channel enhancement MOS Field Effect Transistor.


    Original     		WPM3005 OT-23-3L WPM3005 Transistor W35 PDF

    Untitled

    Abstract: No abstract text available
    Text: Product specification WPM2015 Single P-Channel, -20V, -2.4A, Power MOSFET VDS V -20 Rds(on) (ȍ) 0.081@ VGS=4.5V 0.103@ VGS=2.5V Descriptions SOT-23 D The WPM2015 is P-Channel enhancement 3 MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON)


    Original     		WPM2015 OT-23 WPM2015 PDF

    W32 MARKING

    Abstract: w32 transistor
    Text: Product specification WPM3012 Single P-Channel, -30V, -3.1A, Power MOSFET VDS V -30 Rds(on) (ȍ) 0.058@ VGS=10V 0.080@ VGS=4.5V SOT-23 Descriptions D 3 The WPM3012 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON)


    Original     		WPM3012 OT-23 WPM3012 W32 MARKING w32 transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: MMFTP84 P-Channel Enhancement Mode Vertical D-MOS Transistor FEATURES • Low threshold voltage • Direct interface to C-MOS, TTL, etc. • High-speed switching 1. Gate 2. Source 3. Drain SOT-23 Plastic Package • No secondary breakdown APPLICATIONS • Line current interrupter in telephone sets


    Original     		MMFTP84 OT-23 PDF

    ssm3j331

    Abstract: SSM3J331R
    Text: SSM3J331R MOSFETs Silicon P-Channel MOS U-MOS SSM3J331R 1. Applications • Power Management Switches 2. Features (1) 1.5-V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 150 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 100 mΩ (max) (@VGS = -1.8 V)


    Original     		SSM3J331R OT-23F ssm3j331 SSM3J331R PDF

    Untitled

    Abstract: No abstract text available
    Text: SSM3J327R TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type U-MOSⅥ SSM3J327R ○ Power Management Switch Applications +0.08 1.5-V drive Low ON-resistance: RDS(ON) = 240 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 168 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 123 mΩ (max) (@VGS = -2.5 V)


    Original     		SSM3J327R PDF

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification P-channel enhancement mode MOS transistor FEATURES BSH205 SYMBOL • Very low threshold voltage • Fast switching • Logic level compatible • Subminiature surface mount package QUICK REFERENCE DATA VDS = -12 V


    Original     		BSH205 BSH205 771-BSH205215 PDF

    TA 8783 N

    Abstract: 941L Teledyne Semiconductor 8t17 P0540
    Text: TELEDYNE COMPONENTS W 2flE D flTlVbQS GGUbMaS ^ • ■ i^ J L ^ ß i^ V P 0 5 3 5 , V P 0 5 40 SEM ICONDUCTOR P-CHANNEL ENHANCEMENT-MODE D-MOS FETs ORDERING INFORMATION Sorted Chips in Waffle Pack TO-92 Plastic Package Description VP0535ND VP0535N3 -350V, 75ÌÌ


    OCR Scan     		VP0535ND VP0535N3 -350V, VP0540ND VPQ540N3 -400V, -350V OT-143) TA 8783 N 941L Teledyne Semiconductor 8t17 P0540 PDF

    JR 3610

    Abstract: RT 083 206af 44464
    Text: TELEDYNE COMPONENTS - 2ÖE D Mi ÛTiTtOE 000 ^40^ b • ■ -T-29-25 — cfTlHJlß2l0\7zi V P 0 8 0 8 , V P 1 00 8 SEMICONDUCTOR P-CHANNEL ENHANCEMENT-MODE D-MOS POWER FETs ORDERING INFORMATION Sorted CWp* tn Wsffla Pack TO-226AA (TO-82 Plastic Package


    OCR Scan     		----------------T-29-25 O-226AA O-237 808CHP VP08Q8L VP1008CHP VP1008L VP1008M -100\i VP1008 JR 3610 RT 083 206af 44464 PDF

    Untitled

    Abstract: No abstract text available
    Text: Doc No. TT4-EA-14584 Revision. 2 Product Standards MOS FET MTM131230BBF MTM131230BBF Silicon P-channel MOSFET Unit : mm 2.9 For switching 0.4 0.16 3 • Features 1.5 2.8  Low drain-source ON resistance : RDS on typ. = 40 m  ( VGS = -4.0 V )  Halogen-free / RoHS compliant


    Original     		TT4-EA-14584 MTM131230BBF UL-94 PDF

    J FET RF Cascode Input

    Abstract: T431 Teledyne Semiconductor teledyne fet u
    Text: TELEDYNE C O M P O N EN T S döE » MI Ö TlTbO H 000 3430 T - US'- b « -S '* SD2100 SEMICONDUCTOR_ N-CHANNEL DEPLETION-MODE D-MOS FET ORDERING INFORMATION TO-2Q6AF (TO-72 Hermetic Package SD2100DË with Shorting Ring on lead«


    OCR Scan     		SD2100 SD2100DË SD2100DE/Ft SO-16) OT-143) J FET RF Cascode Input T431 Teledyne Semiconductor teledyne fet u PDF

    VPDS06

    Abstract: TP0610T
    Text: SI LI CO NI X INC IfiE D Ö25473 5 0014051 C X S ilic o n ix TP0610 SERIES Jm W in c o r p o r a te d P-Channel Enhancement-Mode MOS Transistors T '- 3 ~ 7 - - Z 5 ' PRODUCT SUMMARY PART NUMBER BOTTOM VIEW TO-92 V BR DSS fDS(ON) (V) (« } T Id (A) PACKAGE


    OCR Scan     		TP0610 TP0610E O-206AC TP0610L TP0610T OT-23 VPDS06 OT-23 VPDS06 TP0610T PDF

    Untitled

    Abstract: No abstract text available
    Text: TE LEDYNE COMPONENTS EäE a w b a e D o üü ía4 3 â m g T-31-25 SD2204 SEMICONDUCTOR P-CHANNEL ENHANCEMENT MODE D-MOS FET ORDERING INFORMATION Sorted Chips in Conductive Waffle Pack TO-220AA TO-92 Plastic Package Description SD2204CHP SD2204BD -400V, 7000


    OCR Scan     		T-31-25 SD2204 O-220AA SD2204CHP SD2204BD -400V, -500pA SD1201 -400V OT-143) PDF

    tp0610t

    Abstract: tp0610 part marking for tp0610t
    Text: HtSæ Si, TP0610 SERIES P-Channel Enhancement-Mode MOS Transistors BOTTOM VIEW TO-92 TO-226AA PRODUCT SUMMARY "W" •d (A) PACKAGE -60 10 -0.18 TO-92 -60 10 -0.12 SOT-23 PART NUMBER V (BR)DSS TP0610L TP0610T 1 SOURCE 2 GATE 3 DRAIN TOP VIEW SOT-23 Performance Curves: VPDS06


    OCR Scan     		TP0610 O-226AA) TP0610L TP0610T OT-23 VPDS06 TP0610T part marking for tp0610t PDF

    VP0610T

    Abstract: vp0610t marking
    Text: VP0610 SERIES P-Channel Enhancement-Mode MOS Transistors J 7 IS 3 & TO-92 TO-226AA BOTTOM VIEW PRODUCT SUMMARY PART NUMBER V(BR)DSS (V) r DS(ON) ( fl) (A) PACKAGE VP0610L -6 0 10 -0.18 TO-92 VP0610T -6 0 10 -0.1 2 SOT-23 Performance Curves: •d 1 SOURCE


    OCR Scan     		VP0610 O-226AA) VP0610L VP0610T OT-23 VPDS06 Temp10 vp0610t marking PDF

    pw 2222 a

    Abstract: vn10 VN10L N0605 0610L Siliconix vn10
    Text: Tem ic VN10/0605/0610/2222 Series_ S„|C0„|X N-Channel Enhancement-Mode MOS Transistors VN10LE VN10LM VN0605T VN0610LL VN2222LL VN2222LM Product Summary P art Number V B R D SS Min (V) r D S(on) Max (Q) v G S (th ) ID Min (A) (V) VN10LE 5 @ V gs = 10V


    OCR Scan     		VN10/0605/0610/2222 VN10LE VN10LM VN0605T VN0610LL VN2222LL VN2222LM pw 2222 a vn10 VN10L N0605 0610L Siliconix vn10 PDF

    VP0610, sot23

    Abstract: marking HSs SOT23 TO206AC VP0610T
    Text: SILICONIX INC läE D C X Silico n ix X V • Ö25473S 0014110 □ VP0610 SERIES in c o rp o r a te d P-Channel Enhancement-Mode MOS Transistors T Z I-Z S PRODUCT SUMMARY PART NUMBER V BR DSS r DS(ON) (Í1 ) (V) VP0610E -6 0 10 TO-92 ■o (A) PACKAGE -0.25


    OCR Scan     		25473S VP0610 VP0610E O-206AC VP0610L VP0610T OT-23 VPDS06 VP0610, sot23 marking HSs SOT23 TO206AC VP0610T PDF

    2410m

    Abstract: 0300L 2222LM 0808M 2406M 0201T 0300M 12l 7002
    Text: Tem ic S e m i c o n d u c t o r s ^ S08 < > ^ T052 T0220 ^ TO237 T092 2 lead T092 (3 lead) Low-Power Discretes I I % DMOS FETs - Low-Power MOS N-Channel Enhancement-Mode I , Pm Number 14-Pin Sidebraze (P) and Plastic (J) i- V Q 1001J 30 V Q 1001P • ■


    OCR Scan     		T0220 14-Pin 1001P 1001J 1004J 1004P L000J 1000P 1006P T0236 2410m 0300L 2222LM 0808M 2406M 0201T 0300M 12l 7002 PDF

    Untitled

    Abstract: No abstract text available
    Text: t e l e d y n e eòe c o m p o n e n t s m D 000^ 44? a i i T t a a 1 SD5 1 0 0 , SD5 1 0 1 SEMICONDUCTOR _ ~7Z & 7 - / / ' N-CHANNEL ENHANCEMENT-MODE QUAD D-MOS FET ANALOG SWITCH ARRAYS ORDERING INFORMATION Sorted Chips In Waffle Pack SD5100CHP


    OCR Scan     		14-Pin SD5100CHP SD5100N SD5101CHP SD5101N Drivers--SD5100 Drivers--SD5101 SD5100 SO-16) OT-143) PDF

    Untitled

    Abstract: No abstract text available
    Text: TELEDYNE C OM P ON E N T S £öe m D s ö c} i 7 f c i 0 5 m SD220, SD221 SEMICONDUCTOR N-CHANNEL ENHANCEMENT-MODE D-MOS POWER FET O R D E R IN G IN F O R M A T IO N SD220CHP Sorted Chips, in Waffle Pack . SD220HD Description 60 V, 9.0 ohm A B S O L U T E M A X IM U M R A T IN G S Tc


    OCR Scan     		SD220, SD221 -205AF SD220CHP SD220HD SD221CHP SD221HD O-205AF OT-143) tO921 PDF

    LM5112MY

    Abstract: LM5112 LM5112MYX LM5112SD LM5112SDX MTD6N15 Q100 SDE06A LM5112 equivalent IC MOSFET QG 6 PIN
    Text: LM5112 Tiny 7A MOSFET Gate Driver General Description Features The LM5112 MOSFET gate driver provides high peak gate drive current in the tiny LLP-6 package SOT23 equivalent footprint or an 8-Lead exposed-pad MSOP package, with improved power dissipation required for high frequency operation. The compound output driver stage includes MOS


    Original     		LM5112 LM5112 CSP-9-111S2) CSP-9-111S2. LM5112MY LM5112MYX LM5112SD LM5112SDX MTD6N15 Q100 SDE06A LM5112 equivalent IC MOSFET QG 6 PIN PDF

    LM5112MY

    Abstract: LM5112
    Text: LM5112 LM5112 Tiny 7A MOSFET Gate Driver Literature Number: SNVS234B LM5112 Tiny 7A MOSFET Gate Driver General Description Features The LM5112 MOSFET gate driver provides high peak gate drive current in the tiny LLP-6 package SOT23 equivalent footprint or an 8-Lead exposed-pad MSOP package, with


    Original     		LM5112 LM5112 SNVS234B LM5112MY PDF

    2sc 1203

    Abstract: 2Sc1923 equivalent 2SK241 equivalent 2sa 1300 equivalent 2SC 1902 2sc2240 equivalent 2sc1815 equivalent 2SC 1207 N1408 2SC1815 NPN SOT-23
    Text: 5. List of Lead Type and Surface Mount Type Interchangeable Products CTransistors for Low Frequency Small Signal Equipm ent> TO-92 VCEO k V (mA) N PN 50 150 2SC 1815 50 MINI PNP 2SA 1015 N PN 2SC 2458 SSM PNP 2S A 1048 2SA 1015L 2SC 2458L 2SA 1048L 100 2SC2240


    OCR Scan     		1815L 2SC2240 2SC1627 2SC752G SC-70) SC-59) 2SC2713 2SC4210 2SA1621 2SC4209 2sc 1203 2Sc1923 equivalent 2SK241 equivalent 2sa 1300 equivalent 2SC 1902 2sc2240 equivalent 2sc1815 equivalent 2SC 1207 N1408 2SC1815 NPN SOT-23 PDF