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    MOS RM3 DATA Search Results

    MOS RM3 DATA Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    NFMJMPC226R0G3D Murata Manufacturing Co Ltd Data Line Filter, Visit Murata Manufacturing Co Ltd
    NFM15PC755R0G3D Murata Manufacturing Co Ltd Feed Through Capacitor, Visit Murata Manufacturing Co Ltd
    NFM15PC435R0G3D Murata Manufacturing Co Ltd Feed Through Capacitor, Visit Murata Manufacturing Co Ltd
    NFM15PC915R0G3D Murata Manufacturing Co Ltd Feed Through Capacitor, Visit Murata Manufacturing Co Ltd
    TCK424G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation

    MOS RM3 DATA Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    MOS RM3

    Abstract: mos rm3 data XO035 Silicon Image 1364 cmos transistor 0.35 um analog devices transistor tutorials "X-Fab" Core cell library 6E-08 opto mos application ESD "p-well" n-well"
    Text: 0.35 µm CMOS Process Family XO035 MIXED-SIGNAL FOUNDRY EXPERTS 0.35 Micron Modular CMOS Technology For Fast Optical Applications Description XO035 is X-FAB’s specialized process for optoelectronic and high speed RF applications. It is especially suited for applications needing


    Original     		XO035 XO035 35micron MOS RM3 mos rm3 data Silicon Image 1364 cmos transistor 0.35 um analog devices transistor tutorials "X-Fab" Core cell library 6E-08 opto mos application ESD "p-well" n-well" PDF

    rpp1k1

    Abstract: No abstract text available
    Text: 0.18 m Process Family: XT018 0.18 Micron HV SOI CMOS Technology DESCRIPTION The XT018 series is X-FAB’s 0.18 micron Modular High-voltage SOI CMOS Technology. Based on SOI wafers and the industrial standard single poly with up to six metal layers 0.18-micron drawn gate


    Original     		XT018 XT018 18-micron rpp1k1 PDF

    MOS RM3

    Abstract: No abstract text available
    Text: 0.35 µm CMOS Process Family XO035 MIXED-SIGNAL FOUNDRY EXPERTS 0.35 Micron Modular CMOS Technology For Fast Optical Applications Description XO035 is X-FAB’s specialized process for optoelectronic and high speed RF applications. It is especially suited for applications needing


    Original     		XO035 XO035 35-micron MOS RM3 PDF

    mos rm3 data

    Abstract: MOS RM3 BSIM3V3 XH035 RM4L bsim3 dw-mo MICRON POWER RESISTOR Mos Q100 analog devices transistor tutorials
    Text: 0.35 µm CMOS Process Family XA035 MIXED-SIGNAL FOUNDRY EXPERTS 0.35 Micron High Temperature Modular CMOS Technology Description The XA035 Series is X-FAB‘s 0.35 Micron High Temperature CMOS Technology. Main target applications are high temperature automotive and


    Original     		XA035 XA035 35-micron XH035 mos rm3 data MOS RM3 BSIM3V3 RM4L bsim3 dw-mo MICRON POWER RESISTOR Mos Q100 analog devices transistor tutorials PDF

    Untitled

    Abstract: No abstract text available
    Text: 0.35 m Process Family: XA035 0.35 Micron High Temperature Modular CMOS Technology DESCRIPTION The XA035 Series is X-FAB‘s 0.35 Micron High Temperature CMOS Technology. Main target applications are high temperature automotive and Industrial products with temperature range up to


    Original     		XA035 XA035 35-micron PDF

    CMOS

    Abstract: MICRON RESISTOR Mos MOS RM3 power BJT PNP spice model spice gate drive module mos rm3 data ESD "p-well" n-well" CMOS spice model ne3 MOS3ST varactor diode SPICE model
    Text: 0.18 µm CMOS Process XC018 MIXED-SIGNAL FOUNDRY EXPERTS 0.18 Micron Modular RF enabled CMOS Logic and Analog Technology 0.18-micron drawn gate length N-well process, modules are also available for metal-insulatormetal capacitors, high resistive poly, dual gate


    Original     		XC018 18-micron XC018 CMOS MICRON RESISTOR Mos MOS RM3 power BJT PNP spice model spice gate drive module mos rm3 data ESD "p-well" n-well" CMOS spice model ne3 MOS3ST varactor diode SPICE model PDF

    zener diode phc 24

    Abstract: 350v ZENER DIODE -20/zener diode phc 24
    Text: 1.0 µm BCD Process XDM10 MIXED-SIGNAL FOUNDRY EXPERTS Modular 1.0µm 350V Trench Insulated BCD Process Description Key Features XDM10 is X-Fab´s dielectric trench insulated smart power technology. Main target applications are analog switch ICs, driver ICs for capacitive, inductive and resistive loads and EL / piezo driver ICs for


    Original     		XDM10 XDM10 zener diode phc 24 350v ZENER DIODE -20/zener diode phc 24 PDF

    "X-Fab" Core cell library

    Abstract: nd65d RM3 transistors XDH10 analog devices transistor tutorials pnp transistor 650v mos rm3 data 20 PHB zener MOS RM3 nd35b
    Text: 1.0 µm BCD Process XDH10 MIXED-SIGNAL FOUNDRY EXPERTS Modular 1.0µm 650V Trench Insulated BCD Process Description XDH10 is X-Fab´s dielectric trench insulated smart power technology. Main target applications are analog switch ICs, driver ICs for capacitive, inductive and resistive loads and EL / piezo driver ICs for


    Original     		XDH10 XDH10 "X-Fab" Core cell library nd65d RM3 transistors analog devices transistor tutorials pnp transistor 650v mos rm3 data 20 PHB zener MOS RM3 nd35b PDF

    zener diode phc

    Abstract: zener phc 12 zener diode phc 10 zener PH-C zener diode phc 16 zener diode phc 24 zener PH-C 15 zener diode phc 12 nd25d zener diode phc 15
    Text: 1.0 µm BCD Process XDM10 MIXED-SIGNAL FOUNDRY EXPERTS Modular 1.0µm 350V Trench Insulated BCD Process Description XDM10 is X-Fab´s dielectric trench insulated smart power technology. Main target applications are analog switch ICs, driver ICs for capacitive, inductive and resistive loads and EL / piezo driver ICs for


    Original     		XDM10 XDM10 zener diode phc zener phc 12 zener diode phc 10 zener PH-C zener diode phc 16 zener diode phc 24 zener PH-C 15 zener diode phc 12 nd25d zener diode phc 15 PDF

    MOS RM3

    Abstract: mos rm3 data "X-Fab" Core cell library ESD "p-well" n-well" XH035 0.18 um CMOS Spiral Inductor technology bsim3v3 RM3 transistors Q100 analog devices transistor tutorials
    Text: 0.35 µm CMOS Process Family XA035 MIXED-SIGNAL FOUNDRY EXPERTS 0.35 Micron High Temperature Modular CMOS Technology Description The XA035 Series is X-FAB‘s 0.35 Micron High Temperature CMOS Technology. Main target applications are high temperature automotive and


    Original     		XA035 XA035 35-micron XH035 MOS RM3 mos rm3 data "X-Fab" Core cell library ESD "p-well" n-well" 0.18 um CMOS Spiral Inductor technology bsim3v3 RM3 transistors Q100 analog devices transistor tutorials PDF

    CMOS Process Family

    Abstract: XH018 bsim3 bsim3 0.18 micron parameters analog devices transistor tutorials TRANSISTORS BJT list IMD2 transistor XP018 process flow diagram "X-Fab" Core cell library
    Text: 0.18 µm CMOS Process Family XP018 MIXED-SIGNAL FOUNDRY EXPERTS 0.18 Micron CMOS Power Management Process Technology Description The XP018 series is X-FAB’s 0.18 micron Modular Mixed Signal CMOS Power Management Technology. Based upon the industrial standard single


    Original     		XP018 XP018 18-micron CMOS Process Family XH018 bsim3 bsim3 0.18 micron parameters analog devices transistor tutorials TRANSISTORS BJT list IMD2 transistor process flow diagram "X-Fab" Core cell library PDF

    XH035 library

    Abstract: depl "X-Fab" Core cell library nmos transistor 0.35 um cmos transistor 0.35 um CMOS spice model Q100 XH035 analog devices transistor tutorials MOS RM3
    Text: 0.35 µm CMOS Process Family XA035 MIXED-SIGNAL FOUNDRY EXPERTS 0.35 Micron High Temperature Modular CMOS Technology Description The XA035 Series is X-FAB‘s 0.35 Micron High Temperature CMOS Technology. Main target applications are high temperature automotive and


    Original     		XA035 XA035 35-micron XH035 XH035 library depl "X-Fab" Core cell library nmos transistor 0.35 um cmos transistor 0.35 um CMOS spice model Q100 analog devices transistor tutorials MOS RM3 PDF

    MOS RM3

    Abstract: mos rm3 data 200 watt audio amplifier AC97 SLMA002 TPA0103 TPA0103PWP TPA0103PWPLE
    Text: TPA0103 1.75-W 3-CHANNEL STEREO AUDIO POWER AMPLIFIER SLOS167A – JULY 1997 – REVISED MARCH 2000 D D D D D D Desktop Computer Amplifier Solution – 1.75-W Bridge Tied Load BTL Center Channel – 500-mW L/R Single-Ended Channels Low Distortion Output


    Original     		TPA0103 SLOS167A 500-mW 24-Pin MOS RM3 mos rm3 data 200 watt audio amplifier AC97 SLMA002 TPA0103 TPA0103PWP TPA0103PWPLE PDF

    AC97

    Abstract: SLMA002 TPA0103 TPA0103PWP TPA0103PWPLE
    Text: TPA0103 1.75-W 3-CHANNEL STEREO AUDIO POWER AMPLIFIER SLOS167A – JULY 1997 – REVISED MARCH 2000 D D D D D D Desktop Computer Amplifier Solution – 1.75-W Bridge Tied Load BTL Center Channel – 500-mW L/R Single-Ended Channels Low Distortion Output


    Original     		TPA0103 SLOS167A 500-mW 24-Pin AC97 SLMA002 TPA0103 TPA0103PWP TPA0103PWPLE PDF

    bsim3 0.18 micron parameters

    Abstract: bsim3 model for 0.18 micron technology for hspice 0.18 um CMOS parameters bsim3 model model values for 0.18 micron technology cmos XH018 CMOS Process Family model values for 0.25 micron technology cmos aadcc01_3v3 0.18-um CMOS technology length and width
    Text: 0.18 µm CMOS Process Family XH018 MIXED-SIGNAL FOUNDRY EXPERTS 0.18 Micron Modular Mixed Signal HV CMOS Technology Description The XH018 series is X-FAB’s 0.18 micron Modular Mixed Signal HV CMOS Technology. Based upon the industrial standard single poly with up to six


    Original     		XH018 XH018 18-micron bsim3 0.18 micron parameters bsim3 model for 0.18 micron technology for hspice 0.18 um CMOS parameters bsim3 model model values for 0.18 micron technology cmos CMOS Process Family model values for 0.25 micron technology cmos aadcc01_3v3 0.18-um CMOS technology length and width PDF

    XP018

    Abstract: No abstract text available
    Text: 0.18 m Process Family: XP018 0.18 Micron CMOS Analog Mixed-Signal Process Technology DESCRIPTION The XP018 series is X-FAB’s 0.18 micron Modular Mixed Signal CMOS High Performance Analog Mixed-Signal Technology. Based upon the industrial standard single


    Original     		XP018 XP018 18-micron PDF

    mos rm3 data

    Abstract: No abstract text available
    Text: TPA0103 1.75-W 3-CHANNEL STEREO AUDIO POWER AMPLIFIER SLOS167A – JULY 1997 – REVISED MARCH 2000 D D D D D D Desktop Computer Amplifier Solution – 1.75-W Bridge Tied Load BTL Center Channel – 500-mW L/R Single-Ended Channels Low Distortion Output


    Original     		TPA0103 SLOS167A 500-mW 24-Pin mos rm3 data PDF

    AC97

    Abstract: SLMA002 TPA0103 TPA0103PWP TPA0103PWPLE TPA0103PWPR 3.5mm stereo headphone jack MOS RM3
    Text: TPA0103 1.75-W 3-CHANNEL STEREO AUDIO POWER AMPLIFIER SLOS167A – JULY 1997 – REVISED MARCH 2000 D D D D D D Desktop Computer Amplifier Solution – 1.75-W Bridge Tied Load BTL Center Channel – 500-mW L/R Single-Ended Channels Low Distortion Output


    Original     		TPA0103 SLOS167A 500-mW 24-Pin AC97 SLMA002 TPA0103 TPA0103PWP TPA0103PWPLE TPA0103PWPR 3.5mm stereo headphone jack MOS RM3 PDF

    3.5mm stereo headphone jack

    Abstract: No abstract text available
    Text: TPA0103 1.75-W 3-CHANNEL STEREO AUDIO POWER AMPLIFIER SLOS167A – JULY 1997 – REVISED MARCH 2000 D D D D D D Desktop Computer Amplifier Solution – 1.75-W Bridge Tied Load BTL Center Channel – 500-mW L/R Single-Ended Channels Low Distortion Output


    Original     		TPA0103 SLOS167A 500-mW 24-Pin TPA0103EVM 3.5mm stereo headphone jack PDF

    Untitled

    Abstract: No abstract text available
    Text: TPA0103 1.75-W 3-CHANNEL STEREO AUDIO POWER AMPLIFIER SLOS167A – JULY 1997 – REVISED MARCH 2000 D D D D D D Desktop Computer Amplifier Solution – 1.75-W Bridge Tied Load BTL Center Channel – 500-mW L/R Single-Ended Channels Low Distortion Output


    Original     		TPA0103 SLOS167A 500-mW 24-Pin PDF

    Untitled

    Abstract: No abstract text available
    Text: TPA0103 1.75-W 3-CHANNEL STEREO AUDIO POWER AMPLIFIER SLOS167A – JULY 1997 – REVISED MARCH 2000 D D D D D D Desktop Computer Amplifier Solution – 1.75-W Bridge Tied Load BTL Center Channel – 500-mW L/R Single-Ended Channels Low Distortion Output


    Original     		TPA0103 SLOS167A 500-mW 24-Pin PDF

    Untitled

    Abstract: No abstract text available
    Text: TPA0103 1.75-W 3-CHANNEL STEREO AUDIO POWER AMPLIFIER SLOS167A – JULY 1997 – REVISED MARCH 2000 D D D D D D Desktop Computer Amplifier Solution – 1.75-W Bridge Tied Load BTL Center Channel – 500-mW L/R Single-Ended Channels Low Distortion Output


    Original     		TPA0103 SLOS167A 500-mW 24-Pin PDF

    Untitled

    Abstract: No abstract text available
    Text: TPA0103 1.75-W 3-CHANNEL STEREO AUDIO POWER AMPLIFIER SLOS167A – JULY 1997 – REVISED MARCH 2000 D D D D D D Desktop Computer Amplifier Solution – 1.75-W Bridge Tied Load BTL Center Channel – 500-mW L/R Single-Ended Channels Low Distortion Output


    Original     		TPA0103 SLOS167A 500-mW 24-Pin PDF

    nmos transistor 0.35 um

    Abstract: npn pnp rf transistor bipolar cross reference l24c using a zener diode as a varicap NMOS depletion pspice model bsim3 model for 0.18 micron technology for hspice bsim3 model MOS RM3 QS 100 NPN Transistor analog devices transistor tutorials
    Text: 0.6 µm BiCMOS Process Family XHB06 MIXED-SIGNAL FOUNDRY EXPERTS 0.6 Micron Modular HV BCD Technology Description The XHB06 is X-FAB's 0.6 Micron High-Voltage Bipolar CMOS DMOS BCD Technology, optimized for applications requiring operating voltages of 5V to 30V. Main target applications are power


    Original     		XHB06 XHB06 nmos transistor 0.35 um npn pnp rf transistor bipolar cross reference l24c using a zener diode as a varicap NMOS depletion pspice model bsim3 model for 0.18 micron technology for hspice bsim3 model MOS RM3 QS 100 NPN Transistor analog devices transistor tutorials PDF