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    DNDA

    Abstract: No abstract text available
    Text: 1.0 m Process Family: XDH10 Modular 1.0μm 650V Trench Insulated BCD Process DESCRIPTION XDH10 is X-Fab´s dielectric trench insulated smart power technology. Main target applications are analog switch ICs, driver ICs for capacitive, inductive and resistive loads and EL / piezo driver ICs for


    Original     		PDF XDH10 XDH10 DNDA

    nd65d

    Abstract: nd35b nd65c PMOS XDH10
    Text: 1.0 µm BCD Process XDH10 MIXED-SIGNAL FOUNDRY EXPERTS Modular 1.0µm 650V Trench Insulated BCD Process Thick SOI material together with area efficient deep trench insulation allows the design of plenty of silicon islands separated by dielectrical insulation deep enough to construct vertical devices up to 650V.


    Original     		PDF XDH10 XDH10 nd65d nd35b nd65c PMOS

    "X-Fab" Core cell library

    Abstract: nd65d RM3 transistors XDH10 analog devices transistor tutorials pnp transistor 650v mos rm3 data 20 PHB zener MOS RM3 nd35b
    Text: 1.0 µm BCD Process XDH10 MIXED-SIGNAL FOUNDRY EXPERTS Modular 1.0µm 650V Trench Insulated BCD Process Description XDH10 is X-Fab´s dielectric trench insulated smart power technology. Main target applications are analog switch ICs, driver ICs for capacitive, inductive and resistive loads and EL / piezo driver ICs for


    Original     		PDF XDH10 XDH10 "X-Fab" Core cell library nd65d RM3 transistors analog devices transistor tutorials pnp transistor 650v mos rm3 data 20 PHB zener MOS RM3 nd35b