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    MOSFET 1000V Search Results

    MOSFET 1000V Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET 1000V Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: PD-90711C POWER MOSFET THRU-HOLE TO-254AA IRFMG50 1000V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFMG50 RDS(on) ID 2.0Ω 5.6A HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.


    Original     		PDF PD-90711C O-254AA) IRFMG50 O-254AA. MIL-PRF-19500

    mosfet 10a 800v

    Abstract: MOSFET 800V 10A irf 44 n N CHANNEL MOSFET 10A 1000V IRFMG50
    Text: PD-90711C POWER MOSFET THRU-HOLE TO-254AA IRFMG50 1000V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFMG50 RDS(on) ID 2.0Ω 5.6A HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.


    Original     		PDF PD-90711C O-254AA) IRFMG50 O-254AA. MIL-PRF-19500 mosfet 10a 800v MOSFET 800V 10A irf 44 n N CHANNEL MOSFET 10A 1000V IRFMG50

    Untitled

    Abstract: No abstract text available
    Text: PD - 91555A POWER MOSFET SURFACE MOUNT SMD-1 IRFNG40 1000V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFNG40 R DS(on) ID 3.5Ω 3.9A HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The


    Original     		PDF 1555A IRFNG40

    IRFMG40

    Abstract: No abstract text available
    Text: PD - 90710B POWER MOSFET THRU-HOLE TO-254AA IRFMG40 1000V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFMG40 R DS(on) ID 3.5Ω 3.9A HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The


    Original     		PDF 90710B O-254AA) IRFMG40 O-254AA. MIL-PRF-19500 IRFMG40

    IRFNG50

    Abstract: mosfet 10a 800v high power 91556A
    Text: PD - 91556A POWER MOSFET SURFACE MOUNT SMD-1 IRFNG50 1000V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFNG50 R DS(on) 2.0Ω ID 5.5A HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The


    Original     		PDF 1556A IRFNG50 IRFNG50 mosfet 10a 800v high power 91556A

    smd diode 39a

    Abstract: mosfet 10a 800v IRFNG40 mosfet 10a 800v high power smd+diode+39a
    Text: PD - 91555A POWER MOSFET SURFACE MOUNT SMD-1 IRFNG40 1000V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFNG40 R DS(on) ID 3.5Ω 3.9A HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The


    Original     		PDF 1555A IRFNG40 smd diode 39a mosfet 10a 800v IRFNG40 mosfet 10a 800v high power smd+diode+39a

    Untitled

    Abstract: No abstract text available
    Text: PD - 90710B POWER MOSFET THRU-HOLE TO-254AA IRFMG40 1000V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFMG40 R DS(on) ID 3.5Ω 3.9A HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The


    Original     		PDF 90710B O-254AA) IRFMG40 O-254AA. MIL-PRF-19500

    mosfet 10a 800v

    Abstract: IRFMG50 mosfet 10a 800v high power IR rectifier diode 100A 800V
    Text: PD - 90711B POWER MOSFET THRU-HOLE TO-254AA IRFMG50 1000V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFMG50 R DS(on) 2.0Ω ID 5.6A HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The


    Original     		PDF 90711B O-254AA) IRFMG50 IRHM57163SED IRHM57163SEU MIL-PRF-19500 mosfet 10a 800v IRFMG50 mosfet 10a 800v high power IR rectifier diode 100A 800V

    MOSFET 1000v 30a

    Abstract: 10A, 100v fast recovery diode OM9027SP1 OM9028SP1 OM9029SP1 OM9030SP1 diode 1000V 10a
    Text: OM9027SP1 OM9029SP1 OM9028SP1 OM9030SP1 UNCOMMITTED POWER MOSFET AND HIGH SPEED RECTIFIER IN 6-PIN PACKAGE 100V Thru 1000V, 4A To 30A Power MOSFET And High Speed Rectifier In One Package FEATURES • • • • • MOSFET And Common Cathode Rectifier In One Package


    Original     		PDF OM9027SP1 OM9029SP1 OM9028SP1 OM9030SP1 OM9027SP1 OM90Surge 300msec, MOSFET 1000v 30a 10A, 100v fast recovery diode OM9029SP1 OM9030SP1 diode 1000V 10a

    9N100

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 9N100 Preliminary Power MOSFET 9A, 1000V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 9N100 is an N-channel mode power MOSFET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology. This technology allows a minimum on-state


    Original     		PDF 9N100 9N100 QW-R502-735

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 9N100 Preliminary Power MOSFET 9A, 1000V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 9N100 is an N-channel mode power MOSFET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology. This technology allows a minimum on-state


    Original     		PDF 9N100 9N100 O-247 QW-R502-735

    IXZ4DF12N100

    Abstract: DEIC515 500w mosfet power amplifier circuit diagram POWER MOSFET Rise Time 1 ns circuit diagram of smps 500w RF POWER MOSFET deic 515 rf mosfet power amplifier DEIC-515 RF Amplifier 500w 175 mhz
    Text: IXZ4DF12N100 RF Power MOSFET & DRIVER Driver / MOSFET Combination DEIC-515 Driver combined with a DE375-102N12A MOSFET Gate driver matched to MOSFET Features • Isolated Substrate − high isolation voltage >2500V − excellent thermal transfer − Increased temperature and power cycling capability


    Original     		PDF IXZ4DF12N100 DEIC-515 DE375-102N12A 1000lvin IXZ4DF12N100 DEIC515 500w mosfet power amplifier circuit diagram POWER MOSFET Rise Time 1 ns circuit diagram of smps 500w RF POWER MOSFET deic 515 rf mosfet power amplifier RF Amplifier 500w 175 mhz

    mosfet 1200V

    Abstract: cmf20120 SiC MOSFET Cree SiC MOSFET DMOSFET CMF20120D IXDI414 DMOS SiC JEDEC24 RB160M-60
    Text: CMF20120D-Silicon Carbide Power MOSFET 1200V 80 mΩ Z-FET MOSFET Rev. CMF20120D N-Channel Enhancement Mode Subject to change without notice. www.cree.com/power 1 CMF20120D-Silicon Carbide Power MOSFET Z-FET™ MOSFET N-Channel Enhancement Mode VDS = 1200 V


    Original     		PDF CMF20120D-Silicon CMF20120D O-247-3 CMF20120D mosfet 1200V cmf20120 SiC MOSFET Cree SiC MOSFET DMOSFET IXDI414 DMOS SiC JEDEC24 RB160M-60

    CMF20120D

    Abstract: JEDEC24 mosfet 1200V RB160M 6N137 IXDI414 RB160M-60 DMOS SiC electronic transformer halogen 12v MOSFET 800V 10A
    Text: CMF20120D-Silicon Carbide Power MOSFET 1200V 80 mΩ Z-FeTTM MOSFET Rev. A CMF20120D N-Channel Enhancement Mode Subject to change without notice. www.cree.com/power 1 CMF20120D-Silicon Carbide Power MOSFET Z-FeTTM MOSFET VDS = 1200 V RDS on = 80 mΩ N-Channel Enhancement Mode


    Original     		PDF CMF20120D-Silicon CMF20120D O-247-3 CMF20120D JEDEC24 mosfet 1200V RB160M 6N137 IXDI414 RB160M-60 DMOS SiC electronic transformer halogen 12v MOSFET 800V 10A

    Untitled

    Abstract: No abstract text available
    Text: APTMC60TL11CT3AG Three level inverter SiC MOSFET Power Module SiC Power MOSFET : VDSS = 1200V ; RDSon = 98mΩ @ Tj = 25°C Application • Uninterruptible Power Supplies Features • SiC Power MOSFET - Low RDS on - High temperature performance • • •


    Original     		PDF APTMC60TL11CT3AG

    Untitled

    Abstract: No abstract text available
    Text: APTMC60TLM20CT3AG Three level inverter SiC MOSFET Power Module SiC Power MOSFET : VDSS = 1200V ; RDSon = 17mΩ @ Tj = 25°C Application • Uninterruptible Power Supplies Features • SiC Power MOSFET - Low RDS on - High temperature performance • • •


    Original     		PDF APTMC60TLM20CT3AG

    ultrasound transducer circuit driver

    Abstract: ultrasound transducer high power driver DRF12XX ap 474 DRF1203
    Text: DRF1203 PRELIMINARY 1000V, 12A, 30MHz MOSFET Driver Hybrid The DRF1203 hybrid includes a high power gate driver and the power MOSFET. The driver output can be configured as Inverting and NonInverting. It was designed to provide the system designer increased


    Original     		PDF DRF1203 30MHz DRF1203 ultrasound transducer circuit driver ultrasound transducer high power driver DRF12XX ap 474

    Untitled

    Abstract: No abstract text available
    Text: DRF1200 PRELIMINARY 1000V, 13A, 30MHz MOSFET Driver Hybrid The DRF1200 hybrid includes a high power gate driver and the power MOSFET. The driver output can be configured as Inverting and NonInverting. It was designed to provide the system designer increased


    Original     		PDF 30MHz DRF1200 DRF1200

    Untitled

    Abstract: No abstract text available
    Text: APTMC60TLM14CAG Three level inverter SiC MOSFET Power Module SiC Power MOSFET : VDSS = 1200V ; RDSon = 13mΩ @ Tj = 25°C Application • Uninterruptible Power Supplies Features • SiC Power MOSFET - Low RDS on - High temperature performance • SiC Schottky Diode


    Original     		PDF APTMC60TLM14CAG

    Untitled

    Abstract: No abstract text available
    Text: APTMC60TLM14CAG Three level inverter SiC MOSFET Power Module SiC Power MOSFET : VDSS = 1200V ; RDSon = 13mΩ @ Tj = 25°C Application • Uninterruptible Power Supplies Features • SiC Power MOSFET - Low RDS on - High temperature performance • SiC Schottky Diode


    Original     		PDF APTMC60TLM14CAG

    OM3N100ST

    Abstract: OM1N100SA OM1N100ST OM3N100SA OM5N100SA OM6N100SA
    Text: OM1N100SA OM5N100SA OM1N100ST OM3N100SA OM6N100SA OM3N100ST POWER MOSFET IN HERMETIC ISOLATED JEDEC PACKAGE 1000V, Up To 6 Amp, N-Channel MOSFET In Hermetic Metal Package FEATURES • • • • • Isolated Hermetic Metal Package Fast Switching Low RDS on


    Original     		PDF OM1N100SA OM5N100SA OM1N100ST OM3N100SA OM6N100SA OM3N100ST MIL-19500, MAXIMU45 OM3N100ST OM1N100ST

    ultrasound transducer high power driver

    Abstract: ultrasound transducer circuit driver ultrasound datasheet DRF1201 DRF12XX
    Text: DRF1201 PRELIMINARY 1000V, 26A, 30MHz MOSFET Driver Hybrid The DRF1201 hybrid includes a high power gate driver and the power MOSFET. The driver output can be configured as Inverting and NonInverting. It was designed to provide the system designer increased


    Original     		PDF DRF1201 30MHz DRF1201 ultrasound transducer high power driver ultrasound transducer circuit driver ultrasound datasheet DRF12XX

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFET ISOPLUS264TM VDSS = ID25 = RDS on ≤ IXFL34N100 1000V 30A Ω 280mΩ (Electrically Isolated Tab) Single-Die MOSFET N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr ISOPLUS264 Symbol Test Conditions VDSS VDGR


    Original     		PDF ISOPLUS264TM IXFL34N100 ISOPLUS264 IXFN36N100 338B2

    Untitled

    Abstract: No abstract text available
    Text: OM9027SP1 OM9029SP1 OM9Q28SP1 OM9030SP1 UNCOMMITTED POWER MOSFET AND HIGH SPEED RECTIFIER IN 6-PIN PACKAGE 100V Thru 1000V, 4A To 30A Power MOSFET And High Speed Rectifier In One Package FEATURES • • • • • MOSFET And Common Cathode Rectifier In One Package


    OCR Scan     		PDF OM9027SP1 OM9029SP1 OM9Q28SP1 OM9030SP1 300/jsec,