cmf20120
Abstract: CMF20120D mosfet 10a 800v 423F power Diode 800V 20A MOSFET 20a 800v Cree SiC MOSFET
Text: CMF20120D-Silicon Carbide Power MOSFET Z-FeTTM MOSFET VDS = 1200 V ID MAX = 42 A N-Channel Enhancement Mode RDS(on) Features • • • • • • Package High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on) Easy to Parallel and Simple to Drive
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CMF20120D-Silicon
O-247-3
CMF20120D
CMF20120D
cmf20120
mosfet 10a 800v
423F
power Diode 800V 20A
MOSFET 20a 800v
Cree SiC MOSFET
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Untitled
Abstract: No abstract text available
Text: CAS300M12BM2 VDS 1.2 kV 1.2kV, 5.0 mΩ All-Silicon Carbide Half-Bridge Module C2M MOSFET and Z-RecTM Diode Esw, Total @ 300A RDS on Features • • • • • • • Package 5.0 mΩ 62mm x 106mm x 30mm Enables Compact and Lightweight Systems High Efficiency Operation
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CAS300M12BM2
106mm
CAS300M12BM2
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Untitled
Abstract: No abstract text available
Text: CAS300M12BM2 1.2kV, 5.0 mΩ All-Silicon Carbide Half-Bridge Module Z-FET MOSFET and Z-Rec™ Diode Module Features • VDS = 1.2 kV Esw,Total@300A = 12.0 mJ RDS on = 5.0 mΩ Package 62 mm x 106 mm x 30 mm Ultra Low Loss High-Frequency Operation
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CAS300M12BM2
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Untitled
Abstract: No abstract text available
Text: VDS 1200 V ID @ 25˚C 17.7 A CPM2-1200-0160B Silicon Carbide Power MOSFET TM Z-FET MOSFET RDS on 160 mΩ N-Channel Enhancement Mode Features • • • • Package High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on) Easy to Parallel and Simple to Drive
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CPM2-1200-0160B
CPM2-1200-0160B
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PDF
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Untitled
Abstract: No abstract text available
Text: VDS 1700 V ID @ 25˚C 4.9 A C2M1000170D Silicon Carbide Power MOSFET TM Z-FET MOSFET RDS on 1.0 Ω N-Channel Enhancement Mode Features • • • • • Package High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on) Easy to Parallel and Simple to Drive
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C2M1000170D
O-247-3
C2M1000170D
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CMF20120D
Abstract: cmf20120
Text: CMF20120D-Silicon Carbide Power MOSFET Z-FeTTM MOSFET VDS 1200 V ID MAX 42 A R 80mΩ DS(on) N-Channel Enhancement Mode Features • • • • • • Package High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on) Easy to Parallel and Simple to Drive
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CMF20120D-Silicon
O-247-3
CMF20120D
CMF20120D
cmf20120
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PDF
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c2m0080120
Abstract: Cree SiC MOSFET CPM2-1200-0080B C2M0080120D
Text: VDS 1200 V ID @ 25˚C 31.6 A CPM2-1200-0080B Silicon Carbide Power MOSFET TM Z-FET MOSFET RDS on 80 mΩ N-Channel Enhancement Mode Features • • • • • • Package High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on)
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CPM2-1200-0080B
CPM2-1200-0080B
c2m0080120
Cree SiC MOSFET
C2M0080120D
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PDF
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Untitled
Abstract: No abstract text available
Text: VDS 1200 V ID @ 25˚C 90 A CPM2-1200-0025B Silicon Carbide Power MOSFET TM Z-FET MOSFET RDS on 25 mΩ N-Channel Enhancement Mode Features • • • • • Package High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on) Easy to Parallel and Simple to Drive
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CPM2-1200-0025B
CPM2-1200-0025B
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CPMF-1200-S080B
Abstract: DMOSFET bare Die mosfet CMF20120D C2D10120D S080b MOSFET 800V 10A gate drive pulse transformer Gate Drive Characteristics Requirements MOSFET 20a 800v Cree SiC diode die
Text: CPMF-1200-S080B Z-FeTTM Silicon Carbide N-Channel Enhancement Mode Bare Die MOSFET Features • • • • • • = 1200 V RDS on Qg = 80 mΩ = 90.8 nC Package D D Industry Leading RDS(on) High Speed Switching Low Capacitances Easy to Parallel Simple to Drive
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CPMF-1200-S080B
CPMF-1200-S080B
DMOSFET
bare Die mosfet
CMF20120D
C2D10120D
S080b
MOSFET 800V 10A
gate drive pulse transformer Gate Drive Characteristics Requirements
MOSFET 20a 800v
Cree SiC diode die
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PDF
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bare Die mosfet
Abstract: DMOSFET CMF20120 CPMF-1200-S080B ferroxcube 3e27 C2D10120D DMOS SiC gate drive pulse transformer Gate Drive Characteristics Requirements diode schottky 1000V 10a transformer mosfet gate drive circuit
Text: CPMF-1200-S080B Z-FeTTM Silicon Carbide N-Channel Enhancement Mode Bare Die MOSFET Features • • • • • VDS RDS on = 80 mΩ = 90.8 nC Package D D Industry Leading RDS(on) High Speed Switching Low Capacitances Easy to Parallel Simple to Drive G G
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CPMF-1200-S080B
CPMF-1200-S080B
bare Die mosfet
DMOSFET
CMF20120
ferroxcube 3e27
C2D10120D
DMOS SiC
gate drive pulse transformer Gate Drive Characteristics Requirements
diode schottky 1000V 10a
transformer mosfet gate drive circuit
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PDF
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Cree SiC MOSFET
Abstract: No abstract text available
Text: CAS300M17BM2 1.7kV, 8.0 mΩ All-Silicon Carbide Half-Bridge Module C2M MOSFET and Z-Rec Diode 1.7 kV RDS on 8.0 mΩ Esw, Total @ 300A, 150 ˚C Features • • • • • • • VDS Package 23.7 mJ 62mm x 106mm x 30mm Ultra Low Loss High-Frequency Operation
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CAS300M17BM2
106mm
CPWR-AN12,
CPWR-AN13]
CAS300M17BM2
Cree SiC MOSFET
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PDF
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DMOSFET
Abstract: CMF10120 CMF10120D CREE 1200V Z-Rec electronic transformer halogen 12v SiC POWER MOSFET C2D10120D 3E27 ferroxcube tx Cree SiC MOSFET
Text: CMF10120D-Silicon Carbide Power MOSFET Z-FeTTM MOSFET VDS = 1200 V RDS on = 160 mΩ N-Channel Enhancement Mode Qg Features • • • • • • Package D D Industry Leading RDS(on) High Speed Switching Low Capacitances Easy to Parallel Simple to Drive
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CMF10120D-Silicon
CMF10120D
O-247-3
CMF10120D
DMOSFET
CMF10120
CREE 1200V Z-Rec
electronic transformer halogen 12v
SiC POWER MOSFET
C2D10120D
3E27
ferroxcube tx
Cree SiC MOSFET
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PDF
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CPMF-1200-S160B
Abstract: DMOSFET bare Die mosfet Cree SiC diode die mosfet 10a 800v gate drive pulse transformer Gate Drive Characteristics Requirements MOSFET 800V 10A D-MOSFET diode schottky 1000V 10a C2D10120D
Text: CPMF-1200-S160B Z-FeTTM Silicon Carbide N-Channel Enhancement Mode Bare Die MOSFET Features • • • • • • = 1200 V RDS on Qg = 160 mΩ = 47 nC Package D D Industry Leading RDS(on) High Speed Switching Low Capacitances Easy to Parallel Simple to Drive
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CPMF-1200-S160B
CPMF-1200-S160B
DMOSFET
bare Die mosfet
Cree SiC diode die
mosfet 10a 800v
gate drive pulse transformer Gate Drive Characteristics Requirements
MOSFET 800V 10A
D-MOSFET
diode schottky 1000V 10a
C2D10120D
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PDF
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DMOSFET
Abstract: CMF10120 CMF10120D bare Die mosfet 3E27 C2D10120D DMOS SiC CPMF-1200-S160B Cree SiC MOSFET SiC POWER MOSFET
Text: CPMF-1200-S160B Z-FeTTM Silicon Carbide N-Channel Enhancement Mode Bare Die MOSFET Features • • • • • VDS RDS on = 160 mΩ = 47 nC Package D D Industry Leading RDS(on) High Speed Switching Low Capacitances Easy to Parallel Simple to Drive Gate
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CPMF-1200-S160B
CPMF-1200-S160B
DMOSFET
CMF10120
CMF10120D
bare Die mosfet
3E27
C2D10120D
DMOS SiC
Cree SiC MOSFET
SiC POWER MOSFET
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C2M1000170
Abstract: Diode 1S 2473
Text: VDS 1700 V ID @ 25˚C 4.9 A C2M1000170D Silicon Carbide Power MOSFET TM Z-FET MOSFET RDS on 1.0 Ω N-Channel Enhancement Mode Features • • • • • Package High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on) Easy to Parallel and Simple to Drive
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C2M1000170D
O-247-3
C2M1000170D
C2M1000170
Diode 1S 2473
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PDF
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cmf20120
Abstract: CMF20120D MOSFET 20a 800v
Text: CMF20120D-Silicon Carbide Power MOSFET Z-FeTTM MOSFET VDS = 1200 V ID MAX = 42 A N-Channel Enhancement Mode RDS(on) Features • • • • • • Package High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on) Easy to Parallel and Simple to Drive
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CMF20120D-Silicon
O-247-3
CMF20120D
CMF20120D
cmf20120
MOSFET 20a 800v
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PDF
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JEDEC24
Abstract: CPM2-1200-0025B solar charge circuit max 856 CPM2
Text: VDS 1200 V ID @ 120˚C 50 A CPM2-1200-0025B Silicon Carbide Power MOSFET TM Z-FET MOSFET RDS on 25 mΩ N-Channel Enhancement Mode Features • • • • • • Package High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on) Easy to Parallel and Simple to Drive
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CPM2-1200-0025B
CPM2-1200-0025B
JEDEC24
solar charge circuit max 856
CPM2
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PDF
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c2m0080120
Abstract: C2M0080120D 12v to 1000v inverters circuit diagrams 10v to 1000v inverters circuit diagrams
Text: VDS 1200 V ID @ 25˚C 31.6 A C2M0080120D Silicon Carbide Power MOSFET TM Z-FET MOSFET RDS on 80 mΩ N-Channel Enhancement Mode Features • • • • • • Package High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on) Easy to Parallel and Simple to Drive
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C2M0080120D
O-247-3
C2M0080120D
c2m0080120
12v to 1000v inverters circuit diagrams
10v to 1000v inverters circuit diagrams
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PDF
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Untitled
Abstract: No abstract text available
Text: VDS 1200 V ID @ 25˚C 60 A CPM2-1200-0040B Silicon Carbide Power MOSFET TM Z-FET MOSFET RDS on 40 mΩ N-Channel Enhancement Mode Features • • • • • Chip Outline High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on) Easy to Parallel and Simple to Drive
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CPM2-1200-0040B
CPM2-1200-0040B
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CCS020M12CM2
Abstract: CPWR-AN13
Text: CCS020M12CM2 1.2kV, 80 mΩ Silicon Carbide Six-Pack Three Phase Module C2M MOSFET and Z-Rec Diode 1.2 kV RDS(on) 80 mΩ Esw, Total @ 20A, 150 ˚C Features • • • • • • • VDS 0.48 mJ Package Ultra Low Loss High-Frequency Operation Zero Reverse Recovery Current from Diode
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CCS020M12CM2
CPWR-AN12,
CPWR-AN13]
CCS020M12CM2
CPWR-AN13
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C2M0160120D
Abstract: No abstract text available
Text: VDS 1200 V ID MAX @ 25˚C C2M0160120D Silicon Carbide Power MOSFET TM Z-FET MOSFET RDS(on) 17.7 A 160 mΩ N-Channel Enhancement Mode Features • • • • • Package High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on) Easy to Parallel and Simple to Drive
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C2M0160120D
O-247-3
C2M0160applications
C2M0160120D
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PDF
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Untitled
Abstract: No abstract text available
Text: VDS 1200 V ID @ 25˚C 31.6 A C2M0080120D Silicon Carbide Power MOSFET TM Z-FET MOSFET RDS on 80 mΩ N-Channel Enhancement Mode Features • • • • • • Package High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on) Easy to Parallel and Simple to Drive
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C2M0080120D
O-247-3
C2M0080120D
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PDF
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mosfet 1200V
Abstract: cmf20120 SiC MOSFET Cree SiC MOSFET DMOSFET CMF20120D IXDI414 DMOS SiC JEDEC24 RB160M-60
Text: CMF20120D-Silicon Carbide Power MOSFET 1200V 80 mΩ Z-FET MOSFET Rev. CMF20120D N-Channel Enhancement Mode Subject to change without notice. www.cree.com/power 1 CMF20120D-Silicon Carbide Power MOSFET Z-FET™ MOSFET N-Channel Enhancement Mode VDS = 1200 V
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CMF20120D-Silicon
CMF20120D
O-247-3
CMF20120D
mosfet 1200V
cmf20120
SiC MOSFET
Cree SiC MOSFET
DMOSFET
IXDI414
DMOS SiC
JEDEC24
RB160M-60
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PDF
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CMF10120D
Abstract: CMF10120 mosfet 10a 800v high power solar charge circuit max 856 mosfet 10a 800v high frequency C4D05120A
Text: CMF10120D-Silicon Carbide Power MOSFET Z-FeTTM MOSFET VDS = 1200 V ID MAX = 24 A N-Channel Enhancement Mode RDS(on) Features • • • • • • Package High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on) Easy to Parallel and Simple to Drive
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CMF10120D-Silicon
O-247-3
CMF10120D
CMF10120D
CMF10120
mosfet 10a 800v high power
solar charge circuit max 856
mosfet 10a 800v high frequency
C4D05120A
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PDF
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