mosfet 10a 800v
Abstract: MOSFET 800V 10A irf 44 n N CHANNEL MOSFET 10A 1000V IRFMG50
Text: PD-90711C POWER MOSFET THRU-HOLE TO-254AA IRFMG50 1000V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFMG50 RDS(on) ID 2.0Ω 5.6A HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.
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PD-90711C
O-254AA)
IRFMG50
O-254AA.
MIL-PRF-19500
mosfet 10a 800v
MOSFET 800V 10A
irf 44 n
N CHANNEL MOSFET 10A 1000V
IRFMG50
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Untitled
Abstract: No abstract text available
Text: PD-90711C POWER MOSFET THRU-HOLE TO-254AA IRFMG50 1000V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFMG50 RDS(on) ID 2.0Ω 5.6A HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.
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PD-90711C
O-254AA)
IRFMG50
O-254AA.
MIL-PRF-19500
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IRFNG50
Abstract: mosfet 10a 800v high power 91556A
Text: PD - 91556A POWER MOSFET SURFACE MOUNT SMD-1 IRFNG50 1000V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFNG50 R DS(on) 2.0Ω ID 5.5A HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The
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1556A
IRFNG50
IRFNG50
mosfet 10a 800v high power
91556A
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smd diode 39a
Abstract: mosfet 10a 800v IRFNG40 mosfet 10a 800v high power smd+diode+39a
Text: PD - 91555A POWER MOSFET SURFACE MOUNT SMD-1 IRFNG40 1000V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFNG40 R DS(on) ID 3.5Ω 3.9A HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The
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1555A
IRFNG40
smd diode 39a
mosfet 10a 800v
IRFNG40
mosfet 10a 800v high power
smd+diode+39a
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Untitled
Abstract: No abstract text available
Text: PD - 90710B POWER MOSFET THRU-HOLE TO-254AA IRFMG40 1000V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFMG40 R DS(on) ID 3.5Ω 3.9A HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The
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90710B
O-254AA)
IRFMG40
O-254AA.
MIL-PRF-19500
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mosfet 10a 800v
Abstract: IRFMG50 mosfet 10a 800v high power IR rectifier diode 100A 800V
Text: PD - 90711B POWER MOSFET THRU-HOLE TO-254AA IRFMG50 1000V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFMG50 R DS(on) 2.0Ω ID 5.6A HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The
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90711B
O-254AA)
IRFMG50
IRHM57163SED
IRHM57163SEU
MIL-PRF-19500
mosfet 10a 800v
IRFMG50
mosfet 10a 800v high power
IR rectifier diode 100A 800V
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Untitled
Abstract: No abstract text available
Text: PD - 91555A POWER MOSFET SURFACE MOUNT SMD-1 IRFNG40 1000V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFNG40 R DS(on) ID 3.5Ω 3.9A HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The
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1555A
IRFNG40
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IRFMG40
Abstract: No abstract text available
Text: PD - 90710B POWER MOSFET THRU-HOLE TO-254AA IRFMG40 1000V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFMG40 R DS(on) ID 3.5Ω 3.9A HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The
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90710B
O-254AA)
IRFMG40
O-254AA.
MIL-PRF-19500
IRFMG40
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MOSFET 1000v 30a
Abstract: 10A, 100v fast recovery diode OM9027SP1 OM9028SP1 OM9029SP1 OM9030SP1 diode 1000V 10a
Text: OM9027SP1 OM9029SP1 OM9028SP1 OM9030SP1 UNCOMMITTED POWER MOSFET AND HIGH SPEED RECTIFIER IN 6-PIN PACKAGE 100V Thru 1000V, 4A To 30A Power MOSFET And High Speed Rectifier In One Package FEATURES • • • • • MOSFET And Common Cathode Rectifier In One Package
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OM9027SP1
OM9029SP1
OM9028SP1
OM9030SP1
OM9027SP1
OM90Surge
300msec,
MOSFET 1000v 30a
10A, 100v fast recovery diode
OM9029SP1
OM9030SP1
diode 1000V 10a
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IRFAG30
Abstract: No abstract text available
Text: PD -90622 IRFAG30 1000V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRFAG30 BVDSS 1000V RDS(on) 5.6Ω ID 2.3Α The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.
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IRFAG30
O-204AA/AE)
IRFAG30
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Untitled
Abstract: No abstract text available
Text: PD - 90582 IRFAG50 1000V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRFAG50 BVDSS 1000V RDS(on) 2.0Ω ID 5.6Α The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.
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IRFAG50
O-204AA/AE)
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Untitled
Abstract: No abstract text available
Text: PD -90575 IRFAG40 1000V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRFAG40 BVDSS 1000V RDS(on) 3.5Ω ID 3.9Α The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.
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IRFAG40
O-204AA/AE)
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IRFAG40
Abstract: No abstract text available
Text: PD -90575 IRFAG40 1000V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRFAG40 BVDSS 1000V RDS(on) 3.5Ω ID 3.9Α The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.
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IRFAG40
O-204AA/AE)
IRFAG40
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IRFAG50
Abstract: No abstract text available
Text: PD - 90582 IRFAG50 1000V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRFAG50 BVDSS 1000V RDS(on) 2.0Ω ID 5.6Α The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.
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IRFAG50
O-204AA/AE)
electrical252-7105
IRFAG50
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MOSFET 800V 10A
Abstract: 93973D IRHY7G30CMSE
Text: PD - 93973D RADIATION HARDENED POWER MOSFET THRU-HOLE TO-257AA IRHY7G30CMSE 1000V, N-CHANNEL RAD Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHY7G30CMSE 100K Rads (Si) 15Ω ID 1.2A International Rectifier’s RADHardTM HEXFET® MOSFET
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93973D
O-257AA)
IRHY7G30CMSE
IRHY7G30CMSE
MIL-STD-750,
MlL-STD-750,
O-257AA
MOSFET 800V 10A
93973D
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APT0502
Abstract: microsemi mosfet 1000V linear mosfet
Text: APTML100U60R020T1AG Linear MOSFET Power Module VDSS = 1000V RDSon = 600mΩ typ @ Tj = 25°C ID = 20A @ Tc = 25°C Application • Electronic load dedicated to power supplies and battery discharge testing Features • • • • • Linear MOSFET Very low stray inductance
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APTML100U60R020T1AG
APT0502
microsemi mosfet 1000V
linear mosfet
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mosfet 10a 800v
Abstract: MOSFET 800V 10A APT0502
Text: APTML100U60R020T1AG Linear MOSFET Power Module VDSS = 1000V RDSon = 600mΩ typ @ Tj = 25°C ID = 20A @ Tc = 25°C Application • Electronic load dedicated to power supplies and battery discharge testing Features • • • • • Linear MOSFET Very low stray inductance
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APTML100U60R020T1AG
mosfet 10a 800v
MOSFET 800V 10A
APT0502
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thermistor R55
Abstract: APT0502 mosfet 10a 800v high power sensor ptc
Text: APTML1002U60R020T3AG VDSS = 1000V RDSon = 600mΩ typ @ Tj = 25°C ID = 20A @ Tc = 25°C Linear MOSFET Power Module Application • Electronic load dedicated to power supplies and battery discharge testing Features • • • • • Linear MOSFET Very low stray inductance
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APTML1002U60R020T3AG
thermistor R55
APT0502
mosfet 10a 800v high power
sensor ptc
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MOSFET 800V 10A
Abstract: IRHY7G30CMSE
Text: PD - 93973C RADIATION HARDENED POWER MOSFET THRU-HOLE TO-257AA IRHY7G30CMSE 1000V, N-CHANNEL RAD Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHY7G30CMSE 100K Rads (Si) 15Ω ID 1.2A International Rectifier’s RADHardTM HEXFET® MOSFET
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93973C
O-257AA)
IRHY7G30CMSE
IRHY7G30CMSE
MIL-STD-750,
MlL-STD-750,
O-257AA
MOSFET 800V 10A
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Untitled
Abstract: No abstract text available
Text: PD - 93973 RADIATION HARDENED POWER MOSFET THRU-HOLE TO-257AA IRHY7G30CMSE 1000V, N-CHANNEL RAD Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHY7G30CMSE 100K Rads (Si) 15Ω ID 1.2A International Rectifier’s RADHardTM HEXFET® MOSFET
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O-257AA)
IRHY7G30CMSE
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APT0502
Abstract: No abstract text available
Text: APTML1002U60R020T3AG VDSS = 1000V RDSon = 600mΩ typ @ Tj = 25°C ID = 20A @ Tc = 25°C Linear MOSFET Power Module Application • Electronic load dedicated to power supplies and battery discharge testing Features • • • • • Linear MOSFET Very low stray inductance
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APTML1002U60R020T3AG
APT0502
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Untitled
Abstract: No abstract text available
Text: PD - 93973B RADIATION HARDENED POWER MOSFET THRU-HOLE TO-257AA IRHY7G30CMSE 1000V, N-CHANNEL RAD Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHY7G30CMSE 100K Rads (Si) 15Ω ID 1.2A International Rectifier’s RADHardTM HEXFET® MOSFET
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93973B
O-257AA)
IRHY7G30CMSE
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10N100P
Abstract: IXFH10N100P IXFV10N100P N CHANNEL MOSFET 10A 1000V PLUS220SMD
Text: Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM IXFH10N100P IXFV10N100P IXFV10N100PS VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 1000V 10A Ω 1.4Ω 300ns PLUS220 (IXFV) Symbol Test Conditions
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IXFH10N100P
IXFV10N100P
IXFV10N100PS
300ns
PLUS220
10N100P
10N100P
IXFH10N100P
IXFV10N100P
N CHANNEL MOSFET 10A 1000V
PLUS220SMD
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Untitled
Abstract: No abstract text available
Text: OM9027SP1 OM9029SP1 OM9Q28SP1 OM9030SP1 UNCOMMITTED POWER MOSFET AND HIGH SPEED RECTIFIER IN 6-PIN PACKAGE 100V Thru 1000V, 4A To 30A Power MOSFET And High Speed Rectifier In One Package FEATURES • • • • • MOSFET And Common Cathode Rectifier In One Package
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OM9027SP1
OM9029SP1
OM9Q28SP1
OM9030SP1
300/jsec,
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