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    MOSFET 10A 800V HIGH FREQUENCY Search Results

    MOSFET 10A 800V HIGH FREQUENCY Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1ZMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC MOSFET、Low-side: SiC SBD Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET 10A 800V HIGH FREQUENCY Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    CMF10120D

    Abstract: CMF10120 mosfet 10a 800v high power solar charge circuit max 856 mosfet 10a 800v high frequency C4D05120A
    Text: CMF10120D-Silicon Carbide Power MOSFET Z-FeTTM MOSFET VDS = 1200 V ID MAX = 24 A N-Channel Enhancement Mode RDS(on) Features • • • • • • Package High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on) Easy to Parallel and Simple to Drive


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    CMF10120D-Silicon O-247-3 CMF10120D CMF10120D CMF10120 mosfet 10a 800v high power solar charge circuit max 856 mosfet 10a 800v high frequency C4D05120A PDF

    mosfet 1200V

    Abstract: cmf20120 SiC MOSFET Cree SiC MOSFET DMOSFET CMF20120D IXDI414 DMOS SiC JEDEC24 RB160M-60
    Text: CMF20120D-Silicon Carbide Power MOSFET 1200V 80 mΩ Z-FET MOSFET Rev. CMF20120D N-Channel Enhancement Mode Subject to change without notice. www.cree.com/power 1 CMF20120D-Silicon Carbide Power MOSFET Z-FET™ MOSFET N-Channel Enhancement Mode VDS = 1200 V


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    CMF20120D-Silicon CMF20120D O-247-3 CMF20120D mosfet 1200V cmf20120 SiC MOSFET Cree SiC MOSFET DMOSFET IXDI414 DMOS SiC JEDEC24 RB160M-60 PDF

    CMF20120D

    Abstract: JEDEC24 mosfet 1200V RB160M 6N137 IXDI414 RB160M-60 DMOS SiC electronic transformer halogen 12v MOSFET 800V 10A
    Text: CMF20120D-Silicon Carbide Power MOSFET 1200V 80 mΩ Z-FeTTM MOSFET Rev. A CMF20120D N-Channel Enhancement Mode Subject to change without notice. www.cree.com/power 1 CMF20120D-Silicon Carbide Power MOSFET Z-FeTTM MOSFET VDS = 1200 V RDS on = 80 mΩ N-Channel Enhancement Mode


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    CMF20120D-Silicon CMF20120D O-247-3 CMF20120D JEDEC24 mosfet 1200V RB160M 6N137 IXDI414 RB160M-60 DMOS SiC electronic transformer halogen 12v MOSFET 800V 10A PDF

    DMOSFET

    Abstract: CMF10120 CMF10120D CREE 1200V Z-Rec electronic transformer halogen 12v SiC POWER MOSFET C2D10120D 3E27 ferroxcube tx Cree SiC MOSFET
    Text: CMF10120D-Silicon Carbide Power MOSFET Z-FeTTM MOSFET VDS = 1200 V RDS on = 160 mΩ N-Channel Enhancement Mode Qg Features • • • • • • Package D D Industry Leading RDS(on) High Speed Switching Low Capacitances Easy to Parallel Simple to Drive


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    CMF10120D-Silicon CMF10120D O-247-3 CMF10120D DMOSFET CMF10120 CREE 1200V Z-Rec electronic transformer halogen 12v SiC POWER MOSFET C2D10120D 3E27 ferroxcube tx Cree SiC MOSFET PDF

    IRU1239SC

    Abstract: iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter
    Text: SHENZHEN SHOUHE TECHNOLOGY CO., LTD. TEL: 0755-8380 8450 FAX: 0755-8380 8425 Part Information PartNo Function Line Pkg 100MT160PAPBF Discrete IRCI Module MTP 100MT160PA Discrete IRCI Module MTP 100MT160PBPBF Discrete IRCI Module MTP IRCI Module MTP IRCI Module MTK


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    100MT160PAPBF 100MT160PA 100MT160PBPBF IRU1239SC iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter PDF

    CMF20120D

    Abstract: cmf20120
    Text: CMF20120D-Silicon Carbide Power MOSFET Z-FeTTM MOSFET VDS 1200 V ID MAX 42 A R 80mΩ DS(on) N-Channel Enhancement Mode Features • • • • • • Package High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on) Easy to Parallel and Simple to Drive


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    CMF20120D-Silicon O-247-3 CMF20120D CMF20120D cmf20120 PDF

    cmf20120

    Abstract: CMF20120D mosfet 10a 800v 423F power Diode 800V 20A MOSFET 20a 800v Cree SiC MOSFET
    Text: CMF20120D-Silicon Carbide Power MOSFET Z-FeTTM MOSFET VDS = 1200 V ID MAX = 42 A N-Channel Enhancement Mode RDS(on) Features • • • • • • Package High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on) Easy to Parallel and Simple to Drive


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    CMF20120D-Silicon O-247-3 CMF20120D CMF20120D cmf20120 mosfet 10a 800v 423F power Diode 800V 20A MOSFET 20a 800v Cree SiC MOSFET PDF

    cmf20120

    Abstract: CMF20120D MOSFET 20a 800v
    Text: CMF20120D-Silicon Carbide Power MOSFET Z-FeTTM MOSFET VDS = 1200 V ID MAX = 42 A N-Channel Enhancement Mode RDS(on) Features • • • • • • Package High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on) Easy to Parallel and Simple to Drive


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    CMF20120D-Silicon O-247-3 CMF20120D CMF20120D cmf20120 MOSFET 20a 800v PDF

    "VDSS 800V" 40A mosfet

    Abstract: No abstract text available
    Text: APTMC120HR11CT3G Phase Leg & Dual Common Emitter Power Module SiC MOSFET Q1, Q2 : VCES = 1200V ; RDSon = 110mΩ max @ Tj = 25°C Trench & Field Stop IGBT3 (Q3, Q4): VCES = 600V ; IC = 20A @ Tc = 80°C Application • Solar converter • Uninterruptible Power Supplies


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    APTMC120HR11CT3G "VDSS 800V" 40A mosfet PDF

    CPMF-1200-S160B

    Abstract: DMOSFET bare Die mosfet Cree SiC diode die mosfet 10a 800v gate drive pulse transformer Gate Drive Characteristics Requirements MOSFET 800V 10A D-MOSFET diode schottky 1000V 10a C2D10120D
    Text: CPMF-1200-S160B Z-FeTTM Silicon Carbide N-Channel Enhancement Mode Bare Die MOSFET Features • • • • • • = 1200 V RDS on Qg = 160 mΩ = 47 nC Package D D Industry Leading RDS(on) High Speed Switching Low Capacitances Easy to Parallel Simple to Drive


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    CPMF-1200-S160B CPMF-1200-S160B DMOSFET bare Die mosfet Cree SiC diode die mosfet 10a 800v gate drive pulse transformer Gate Drive Characteristics Requirements MOSFET 800V 10A D-MOSFET diode schottky 1000V 10a C2D10120D PDF

    DMOSFET

    Abstract: CMF10120 CMF10120D bare Die mosfet 3E27 C2D10120D DMOS SiC CPMF-1200-S160B Cree SiC MOSFET SiC POWER MOSFET
    Text: CPMF-1200-S160B Z-FeTTM Silicon Carbide N-Channel Enhancement Mode Bare Die MOSFET Features • • • • • VDS RDS on = 160 mΩ = 47 nC Package D D Industry Leading RDS(on) High Speed Switching Low Capacitances Easy to Parallel Simple to Drive Gate


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    CPMF-1200-S160B CPMF-1200-S160B DMOSFET CMF10120 CMF10120D bare Die mosfet 3E27 C2D10120D DMOS SiC Cree SiC MOSFET SiC POWER MOSFET PDF

    15A POWER TRANSISTOR FOR SMPS

    Abstract: list of n channel power mosfet FQPF*10n20c FAN7601 detailed vfd circuit diagram for motor FAN7601 application data list of P channel power mosfet 80a charger transformer dual Phototransistor mouse FQPF10N20C
    Text: New LEDs and LED Driver IC Solutions 1 • Comprehensive New Product List • New Product Highlights FAN7031, FAN7023, FAN7005 - Audio Amplifiers FIN7216-01 - Quad PHY FAN7556 - Voltage Mode PWM Controller FAN7601 - Current Mode PWM Controller FSA3357 - SP3T Analog Switch


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    FAN7031, FAN7023, FAN7005 FIN7216-01 FAN7556 FAN7601 FSA3357 QVE00033 Power247TM, 15A POWER TRANSISTOR FOR SMPS list of n channel power mosfet FQPF*10n20c detailed vfd circuit diagram for motor FAN7601 application data list of P channel power mosfet 80a charger transformer dual Phototransistor mouse FQPF10N20C PDF

    TRIACS EQUIVALENT LIST

    Abstract: 440v to 12v smps power supply REG IC 48V IN 12V 10A OUT 440v ac voltage regulator 440v to 12v smps power supply 50A dimmer diagrams IGBT FKPF12N60 24v 12v 20A regulator 600V igbt dc to dc buck converter 24V 10A SMPS
    Text: FS8S0765RC The FS8S0765RC is a highly integrated off-line power switch FPS for CRT monitor fly-back power supply applications. This device integrates a fully avalanche-rated SenseFET (650V minimum breakdown rating) with a


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    FS8S0765RC new/fs8s0765rc FS8S0765RC ACE1502 FAN1655 FAN2534 FAN5098 Power247TM, TRIACS EQUIVALENT LIST 440v to 12v smps power supply REG IC 48V IN 12V 10A OUT 440v ac voltage regulator 440v to 12v smps power supply 50A dimmer diagrams IGBT FKPF12N60 24v 12v 20A regulator 600V igbt dc to dc buck converter 24V 10A SMPS PDF

    Solid State Relays

    Abstract: gunther relay. 3700 WG A8 6D 03 Z TRIAC 20A 600V WG A5 6D 25
    Text: HEATSINK DIMENSIONS WG - K3/160 Screw thread M4 x 6mm 0.16x0.24 / 10 pieces WG - K1/100 B/D Snap-on-rail 35 (1.38) 100 (3.94) B B A A B Snap-on-rail 35 (1.38) B 160 (6.3) A 20 (0.79) D C 3.0 (0.12) Snap-on-rail mounting Snap-on-rail mounting 1.5 (0.06) Counterbore for grounding


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    K3/160 K2/100 Solid State Relays gunther relay. 3700 WG A8 6D 03 Z TRIAC 20A 600V WG A5 6D 25 PDF

    inverter welder schematic

    Abstract: arc welder schematic full bridge arc welder arc welder inverter inverter welder 4 schematic inverter welder schematic 1 phase SWITCHING WELDING SCHEMATIC BY MOSFET ZVT full bridge pwm controller smps welder schematic pwm INVERTER welder
    Text: APT9803 APPLICATION NOTE By: Hubert Aigner Kenneth Dierberger Denis Grafham Improving the Full-bridge Phase-shift ZVT Converter for Failure-free Operation Under Extreme Conditions in Welding and Similar Applications Presented at IAS 98 St. Louis Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating


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    APT9803 ppIII/87-93, SEM-900, inverter welder schematic arc welder schematic full bridge arc welder arc welder inverter inverter welder 4 schematic inverter welder schematic 1 phase SWITCHING WELDING SCHEMATIC BY MOSFET ZVT full bridge pwm controller smps welder schematic pwm INVERTER welder PDF

    Untitled

    Abstract: No abstract text available
    Text: APTMC120HR11CT3G Phase Leg & Dual Common Emitter Power Module SiC MOSFET Q1, Q2 : VCES = 1200V ; RDSon = 98mΩ max @ Tj = 25°C Trench & Field Stop IGBT3 (Q3, Q4): VCES = 600V ; IC = 20A @ Tc = 80°C Application • Solar converter • Uninterruptible Power Supplies


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    APTMC120HR11CT3G PDF

    Untitled

    Abstract: No abstract text available
    Text: APTMC60TL11CT3AG Three level inverter SiC MOSFET Power Module SiC Power MOSFET : VDSS = 1200V ; RDSon = 98mΩ @ Tj = 25°C Application • Uninterruptible Power Supplies Features • SiC Power MOSFET - Low RDS on - High temperature performance • • •


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    APTMC60TL11CT3AG PDF

    CPMF-1200-S080B

    Abstract: DMOSFET bare Die mosfet CMF20120D C2D10120D S080b MOSFET 800V 10A gate drive pulse transformer Gate Drive Characteristics Requirements MOSFET 20a 800v Cree SiC diode die
    Text: CPMF-1200-S080B Z-FeTTM Silicon Carbide N-Channel Enhancement Mode Bare Die MOSFET Features • • • • • • = 1200 V RDS on Qg = 80 mΩ = 90.8 nC Package D D Industry Leading RDS(on) High Speed Switching Low Capacitances Easy to Parallel Simple to Drive


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    CPMF-1200-S080B CPMF-1200-S080B DMOSFET bare Die mosfet CMF20120D C2D10120D S080b MOSFET 800V 10A gate drive pulse transformer Gate Drive Characteristics Requirements MOSFET 20a 800v Cree SiC diode die PDF

    bare Die mosfet

    Abstract: DMOSFET CMF20120 CPMF-1200-S080B ferroxcube 3e27 C2D10120D DMOS SiC gate drive pulse transformer Gate Drive Characteristics Requirements diode schottky 1000V 10a transformer mosfet gate drive circuit
    Text: CPMF-1200-S080B Z-FeTTM Silicon Carbide N-Channel Enhancement Mode Bare Die MOSFET Features • • • • • VDS RDS on = 80 mΩ = 90.8 nC Package D D Industry Leading RDS(on) High Speed Switching Low Capacitances Easy to Parallel Simple to Drive G G


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    CPMF-1200-S080B CPMF-1200-S080B bare Die mosfet DMOSFET CMF20120 ferroxcube 3e27 C2D10120D DMOS SiC gate drive pulse transformer Gate Drive Characteristics Requirements diode schottky 1000V 10a transformer mosfet gate drive circuit PDF

    Untitled

    Abstract: No abstract text available
    Text: APT13GP120BDF1 APT13GP120BDF1 1200V POWER MOS 7 IGBT A new generation of high voltage power IGBTs. Using punch-through technology and a proprietary metal gate, this IGBT has been optimized for very fast switching, making it ideal for high frequency, high voltage switch-mode


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    APT13GP120BDF1 O-247 PDF

    Untitled

    Abstract: No abstract text available
    Text: R8010ANX Nch 800V 10A Power MOSFET Datasheet lOutline VDSS 800V RDS on (Max.) 0.56W ID 10A PD 40W TO-220FM (1) (2) lFeatures (3) lInner circuit 1) Low on-resistance. 3) Gate-source voltage (VGSS) guaranteed to be 30V. (1) Gate (2) Drain (3) Source 4) Drive circuits can be simple.


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    R8010ANX O-220FM R1102A PDF

    Untitled

    Abstract: No abstract text available
    Text: APTMC120HRM40CT3G Phase Leg & Dual Common Emitter Power Module SiC MOSFET Q1, Q2 : VCES = 1200V ; RDSon = 34mΩ max @ Tj = 25°C Trench & Field Stop IGBT3 (Q3, Q4): VCES = 600V ; IC = 50A @ Tc = 80°C Application • Solar converter • Uninterruptible Power Supplies


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    APTMC120HRM40CT3G PDF

    Untitled

    Abstract: No abstract text available
    Text: APT22M100JCU3 ISOTOP Buck chopper MOSFET + SiC chopper diode Power module VDSS = 1000V RDSon = 400mΩ typ @ Tj = 25°C ID = 22A @ Tc = 25°C Application • AC and DC motor control • Switched Mode Power Supplies D Features • G S • SiC Schottky Diode


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    APT22M100JCU3 OT-227) PDF

    Untitled

    Abstract: No abstract text available
    Text: APT26M100JCU2 ISOTOP Boost chopper MOSFET + SiC chopper diode Power module VDSS = 1000V RDSon = 330mΩ typ @ Tj = 25°C ID = 26A @ Tc = 25°C Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction • Brake switch


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    APT26M100JCU2 OT-227) PDF