IRF P CHANNEL MOSFET
Abstract: MOSFET 150 N IRF N-P Channel mosfet
Text: PD - 96106 IRF7307QPbF HEXFET Power MOSFET l l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Automotive [Q101] Qualified Lead-Free S1 N-CHANNEL MOSFET
|
Original
|
IRF7307QPbF
EIA-481
EIA-541.
IRF P CHANNEL MOSFET
MOSFET 150 N IRF
N-P Channel mosfet
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PD - 96132 IRF7380QPbF l l l l l l l l HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance N Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Automotive [Q101] Qualified Lead-Free VDSS RDS on max 73m:@VGS = 10V
|
Original
|
IRF7380QPbF
|
PDF
|
HEXFET SO-8
Abstract: PN channel MOSFET 10A
Text: PD - 96132A IRF7380QPbF l l l l l l l l HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance N Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Automotive [Q101] Qualified Lead-Free VDSS RDS on max 73m:@VGS = 10V
|
Original
|
6132A
IRF7380QPbF
HEXFET SO-8
PN channel MOSFET 10A
|
PDF
|
Transistor Mosfet N-Ch 30V
Abstract: No abstract text available
Text: PD - 96111A IRF7379QPbF HEXFET Power MOSFET l l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Automotive [Q101] Qualified Lead-Free 6 '
|
Original
|
6111A
IRF7379QPbF
EIA-481
EIA-541.
Transistor Mosfet N-Ch 30V
|
PDF
|
IRFP 640
Abstract: No abstract text available
Text: Standard Power MOSFET IRFP 260 VDSS = 200 V ID cont = 46 A RDS(on) = 55 mW N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 200 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 200 V VGS Continuous ±20 V VGSM Transient
|
Original
|
O-247
IRFP 640
|
PDF
|
IRFP 640
Abstract: IRFP P CHANNEL IRFP P CHANNEL MOSFET IRFP 460 datasheet transistor irfp irfp 460 IRFP 125OC 23/IRFP 460
Text: MegaMOSTM Power MOSFET IRFP 460 VDSS ID cont RDS(on) = 500 V = 20 A Ω = 0.27Ω N-Channel Enhancement Mode, HDMOSTM Family Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500 V VGS Continuous
|
Original
|
O-247
125OC
100ms
Figure10.
IRFP 640
IRFP P CHANNEL
IRFP P CHANNEL MOSFET
IRFP 460 datasheet
transistor irfp
irfp 460
IRFP
125OC
23/IRFP 460
|
PDF
|
IRFP 640
Abstract: IRFP264 IRFP P CHANNEL
Text: IRFP 264 Standard Power MOSFET VDSS = 250 V ID cont = 38 A RDS(on) = 0.075 Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 250 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 250 V VGS Continuous ±20 V VGSM Transient
|
Original
|
O-247
IRFP 640
IRFP264
IRFP P CHANNEL
|
PDF
|
IRFP 450 application
Abstract: GD15-0 IRFP 640 20NC50 IRFP P CHANNEL transistor irfp IRFP 450
Text: IRFP 450 Standard Power MOSFET VDSS = 500 V ID cont = 14 A RDS(on) = 0.40 Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500 V VGS Continuous ±20 V VGSM Transient
|
Original
|
|
PDF
|
IRFP 640
Abstract: IRFP254
Text: IRFP 254 Standard Power MOSFET VDSS = 250 V ID cont = 23 A RDS(on) = 0.14 Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 250 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 250 V VGS Continuous ±20 V VGSM Transient
|
Original
|
O-247
IRFP 640
IRFP254
|
PDF
|
mosfet irfp 250 A
Abstract: No abstract text available
Text: Standard Power MOSFET IRFP 254 VDSS ID cont RDS(on) = 250 V = 23 A = 0.14 Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C 250 V VDGR T J = 25°C to 150°C; RGS = 1 MΩ 250 V VGS Continuous ±20 V VGSM Transient
|
Original
|
O-247
mosfet irfp 250 A
|
PDF
|
Untitled
Abstract: No abstract text available
Text: □ IXYS Standard Power MOSFET IRFP250 VDSS = 200 V ID cont = 30 A P DS(on) = 85 mQ N-Channel Enhancement Mode Symbol Test Conditions V DSS ^ V DGR T.J = 25°C to 150°C;’ v GS Maximum Ratings = 25 °C to 150°C 200 V 200 V Continuous ±20 V v GSM Transient
|
OCR Scan
|
IRFP250
O-247
|
PDF
|
20nc50
Abstract: IRFP 450 irfp
Text: Standard Power MOSFET IRFP 450 VDSS ID cont RDS(on) = 500 V = 14 A = 0.40 Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C 500 V VDGR T J = 25°C to 150°C; RGS = 1 MΩ 500 V VGS Continuous ±20 V VGSM Transient
|
Original
|
O-247
20nc50
IRFP 450
irfp
|
PDF
|
mosfet irfp 250 N
Abstract: IRFP 260 M w46a Irfp260 transistor irfp
Text: Standard Power MOSFET IRFP 260 VDSS ID cont RDS(on) = 200 V = 46 A Ω = 55 mΩ N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 200 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 200 V VGS Continuous ±20 V VGSM Transient
|
Original
|
|
PDF
|
Untitled
Abstract: No abstract text available
Text: □ 1XYS J Standard Power MOSFET IRFP450 V DSS D cont D DS(on) 500 V 14 A 0.40 Q N-Channel Enhancement Mode Symbol Test Conditions V DSS Tj = 25 °C to 150°C 500 V v DGR ^ 500 V +20 V +30 V Maximum Ratings = 25 °C to 150°C; RGS = 1 MQ V GS Continuous VGSM
|
OCR Scan
|
IRFP450
O-247
|
PDF
|
|
|
Untitled
Abstract: No abstract text available
Text: □ IXYS MegaMOS IRFP460 Power MOSFET V DSS = 500 V 20 A D cont D DS(on) N-Channel Enhancement Mode, HDM OS™ Family Maximum Ratings Symbol Test Conditions V DSS Tj = 25°C to 150°C 500 V v DGR Tj = 25°C to 150°C; RGS = 1 M£i 500 V VGS V GSM Continuous
|
OCR Scan
|
IRFP460
O-247
|
PDF
|
N-channel MOSFET to-247
Abstract: NS 106 IRFP 530
Text: Standard Power MOSFET IRFP 250 VDSS ID cont RDS(on) = 200 V = 30 A Ω = 85 mΩ N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C 200 V VDGR T J = 25°C to 150°C; RGS = 1 MΩ 200 V VGS Continuous ±20 V VGSM
|
Original
|
O-247
N-channel MOSFET to-247
NS 106
IRFP 530
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PD 9.1623 International IGR Rectifier IRF3315 PRELIMINARY HEXFET Power MOSFET • • • • • Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated VDss = 150 V ^D S c n = Description 0.082Q
|
OCR Scan
|
IRF3315
O-220
554S5
|
PDF
|
ML555
Abstract: c871 marking code 7Gs h51 diode IQR 2400 IRF1010 IRF2525 JISR9246 SS452 002B3
Text: P D 9.1641 International Iö R Rectifier IRF2525 PRELIMINARY HEXFET2*Power MOSFET • Advanced Process Technology • Dynamic dv/dt Rating • 150°C Operating Temperature • Fast Switching • Fully Avalanche Rated V dss = R o S o n = Description Id =
|
OCR Scan
|
O-220
ML555
c871
marking code 7Gs
h51 diode
IQR 2400
IRF1010
IRF2525
JISR9246
SS452
002B3
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PD – 96114A IRF7805QPbF Advanced Process Technology Ultra Low On-Resistance N Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Lead-Free l l l l l l l Description These HEXFET Power MOSFET's in package utilize the lastest processing techniques to achieve
|
Original
|
6114A
IRF7805QPbF
EIA-481
EIA-541.
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PD-91477D International IÖR Rectifier IRF3415 HEXFET Power MOSFET • • • • • Advanced Process Technology Dynam ic dv/dt Rating 1 7 5 °C O perating Tem perature Fast Switching Fully A valanche Rated V dss = 150 V R ü S o n = 0 . 0 4 2 Î 2
|
OCR Scan
|
PD-91477D
IRF3415
O-220
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PD - 9 .1302B In te rn a tio n a l I ö R Rectifier IR F R M J 4 1 0 5 HEXFET Power MOSFET • Ultra Low On-Resistance • Surface Mount IRFR4105 • Straight Lead (IRFU4105) • 150°C Operating Temperature • Fast Switching • Fully Avalanche Rated
|
OCR Scan
|
IRFR4105)
IRFU4105)
|
PDF
|
Untitled
Abstract: No abstract text available
Text: P D - 9.1253 biternational [Ml Rectifier IRFR2605 IRFU2605 HEXFET Power MOSFET • • • • • • • Ultra Low O n-R esistance ESD P rotected S urface M ount IR FR 2605 S traight Lead (IR FU 2605) 150°C O perating Tem perature R epetitive A valanche Rated
|
OCR Scan
|
IRFR2605
IRFU2605
|
PDF
|
ic 94101
Abstract: innovative dro IRF7342D2
Text: PD- 94101 IRF7342D2 TM FETKY MOSFET & Schottky Diode l l l l l Co-packaged HEXFET Power MOSFET and Schottky Diode Ideal For Buck Regulator Applications P-Channel HEXFET Low VF Schottky Rectifier SO-8 Footprint 1 8 K A 2 7 K S 3 6 D G 4 5 D A VDSS = -55V
|
Original
|
IRF7342D2
ic 94101
innovative dro
IRF7342D2
|
PDF
|
HA1190
Abstract: No abstract text available
Text: IRFP440A A d van ced Power MOSFET FEATURES BVdss = 500 V ♦ Rugged Gate Oxide Technology ^DS on = 0.85Î2 ♦ Lower Input Capacitance lD ♦ Avalanche Rugged Technology = 8.5 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area TO-3P ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 500V
|
OCR Scan
|
IRFP440A
HA1190
|
PDF
|
