200V 200A mosfet
Abstract: mosfet 400a 200V N mosfet 100v 200A "MOSFET Module" power mosfet 200A STY100NS20FD mosfet 200A time switch speed off 200 ampere MOSFET datasheet welding mosfet QJD0240002
Text: QJD0240002 Powerex, Inc., 200 Hillis St., Youngwood 15697 724 925-7272 Dual Power MOSFET Module 400 Amperes/200 Volts Description: Powerex Dual MOSFET Module is designed specially for customer applications. The module is isolated for easy mounting with other
|
Original
|
PDF
|
QJD0240002
Amperes/200
STY100NS20FD
200V 200A mosfet
mosfet 400a 200V
N mosfet 100v 200A
"MOSFET Module"
power mosfet 200A
mosfet 200A time switch speed off
200 ampere MOSFET datasheet
welding mosfet
QJD0240002
|
NTE2995
Abstract: No abstract text available
Text: NTE2995 MOSFET N−Channel, Enhancement Mode High Speed Switch Features: D RDS on = 0.65Ω Typical D Extremely High dv/dt Capability D Gate Charge Minimized D Gate−to−Source Zener Diode Protected Applications: D High Current, High Speed Switching D Ideal for Off−Line Power Supplies, Adaptor and PFC
|
Original
|
PDF
|
NTE2995
NTE2995
|
IRFB3077
Abstract: how mosfets connect parallel AN4108 APP4108 CR2025 MAX5048 MAX5054 A Simple Rise and Fall Time Waveform Control parallel connection of MOSFETs
Text: Maxim > App Notes > MEASUREMENT CIRCUITS SIGNAL GENERATION CIRCUITS PROTECTION AND ISOLATION Keywords: SPST, bipolar power switch, transient generation, test, voltage impulses, test load, switch design, power-circuit testing, power-supply test, fault testing
|
Original
|
PDF
|
com/an4108
MAX5048:
MAX5054:
AN4108,
APP4108,
Appnote4108,
IRFB3077
how mosfets connect parallel
AN4108
APP4108
CR2025
MAX5048
MAX5054
A Simple Rise and Fall Time Waveform Control
parallel connection of MOSFETs
|
ACS756
Abstract: em 235 stepper em 499 stepper motor ACS712 A3930 A3986 stepper motor em 235 A3931 ACS714 UGN3177 HALF EFFECT SENSOR
Text: Avnet Memec – The Source of Innovation www.avnet-memec.eu ALLEGRO PRODUCT SELECTOR GUIDE 2008 04/2008 www.allegromicro.com CREATE INNOVATE ACCELERATE CURRENT SENSORS ALLEGRO‘S UNI- OR BIDIRECTIONAL CURRENT SENSORS OFFER A UNIQUE SOLUTION KEY FEATURES • Very smal package size
|
Original
|
PDF
|
150Khz
D-59439
PL-41-800
TR-34742
ACS756
em 235 stepper
em 499 stepper motor
ACS712
A3930
A3986
stepper motor em 235
A3931
ACS714
UGN3177 HALF EFFECT SENSOR
|
manual Bst Tiny 20
Abstract: all n type mosfet switch ic for notebook cpu core dc to dc conversion MAX17026 MAX15018 MAX15021 offline switcher MAX5945 MAX15039 MAX8566ETJ MAX8646
Text: Power Solutions for Enterprise Management 1st Edition January 2009 Power solutions for computing, datacom, and telecom PowerMind PMBus™ pages 2, 3 PowerMind DC-DC conversion pages 4–10 Isolated DC-DC converters page 15 SYSTEM AND POWER MANAGEMENT MOSFET
|
Original
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 15N70 Preliminary Power MOSFET 15A, 700V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 15N70 is an N-Channel enhancement MOSFET, it uses UTC’s advanced technology to provide customers with a minimum on-state resistance, high switching speed and low gate charge. It
|
Original
|
PDF
|
15N70
15N70
15N70L-T3P-T
15N70G-T3P-T
QW-R502-839
|
NTE2941
Abstract: No abstract text available
Text: NTE2941 MOSFET N–Ch, Enhancement Mode High Speed Switch Features: D Low Static Drain–Source ON Resistance D Improved Inductive Ruggedness D Fast Switching Times D Low Input Capacitance D Extended Safe Operating Area D TO220 Type Isolated Package Absolute Maximum Ratings:
|
Original
|
PDF
|
NTE2941
NTE2941
|
sot-23 pinout
Abstract: 431 sot23-5 FAN21SV06 11n60f FAN7385 FAN7382 FAN7380 fan3000 5N60 datasheet 4N60 fairchild
Text: Power Seminar 2007 – New Product Update Q3/Q4 Jon Harper, Market Development Manager, Industrial & White Goods Systems, Europe September 2007 www.fairchildsemi.com Products for Power Supplies • • • • • Power33 and Power56 MOSFETs Low input voltage drivers: FAN3xxx
|
Original
|
PDF
|
Power33
Power56
FAN73xx
FAN4800
sot-23 pinout
431 sot23-5
FAN21SV06
11n60f
FAN7385
FAN7382
FAN7380
fan3000
5N60 datasheet
4N60 fairchild
|
Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD Preliminary 1N50K-TA Power MOSFET 1.3A, 500V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 1N50K-TA is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum
|
Original
|
PDF
|
1N50K-TA
1N50K-TA
QW-R205-048
|
Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 15N65K-MT Power MOSFET 15A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 15N65K-MT is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum
|
Original
|
PDF
|
15N65K-MT
15N65K-MT
15N65KL-TFat
QW-R205-055
|
Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 7N75 Preliminary Power MOSFET 7.0A, 750V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N75 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in allowing a
|
Original
|
PDF
|
O-220
QW-R502-563
|
DIODE 929
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 7N80Z Power MOSFET 7A, 800V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N80Z is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in allowing a
|
Original
|
PDF
|
7N80Z
7N80Z
7N80ZL-TF1-T
7N80ZG-TF1-T
QW-R502-929,
DIODE 929
|
14n50
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 14N50 Preliminary Power MOSFET 14A, 500V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 14N50 is an N-Channel enhancement mode power MOSFET. The device adopts planar stripe and uses DMOS technology to minimize and provide lower on-state resistance and
|
Original
|
PDF
|
14N50
14N50
O-263
|
Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 7N75 Preliminary Power MOSFET 7.0 Amps, 750 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N75 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in allowing a
|
Original
|
PDF
|
O-220
QW-R502-563
|
|
|
mosfet 400V
Abstract: 20n40
Text: UNISONIC TECHNOLOGIES CO., LTD 20N40 Preliminary Power MOSFET 400V, 23A N-CHANNEL POWER MOSFET DESCRIPTION The UTC 20N40 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state
|
Original
|
PDF
|
20N40
20N40
O-247
QW-R502-623
mosfet 400V
|
Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 20N40 Preliminary Power MOSFET 400V, 23A N-CHANNEL POWER MOSFET DESCRIPTION The UTC 20N40 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state
|
Original
|
PDF
|
20N40
20N40
20N40L-T47-T
20N40Gat
QW-R502-623
|
Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 14N40K-MT Preliminary Power MOSFET 14A, 400V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 14N40K-MT is an N-Channel enhancement mode power MOSFET. The device adopts planar stripe and uses DMOS technology to minimize and provide lower on-state resistance and
|
Original
|
PDF
|
14N40K-MT
14N40K-MT
O-220F2
QW-R502-B10
|
Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 13N50K-MT Preliminary Power MOSFET 13A, 500V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 13N50K-MT is an N-Channel enhancement mode power MOSFET. The device adopts planar stripe and uses DMOS technology to minimize and provide lower on-state resistance and
|
Original
|
PDF
|
13N50K-MT
13N50K-MT
O-220F2
QW-R502-B09
|
Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 14N50 Preliminary Power MOSFET 14A, 500V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 14N50 is an N-Channel enhancement mode power MOSFET. The device adopts planar stripe and uses DMOS technology to minimize and provide lower on-state resistance and
|
Original
|
PDF
|
14N50
14N50
O-263
QW-R502-720
|
MJ10200
Abstract: MC13528 MTE200N05 C2785 high speed Zener Diode 200v 200A fet MTE200N06 MR2525L equivalent 200a mosfet MJ-102
Text: AR133 mi lllililll g M ilM MULTICHIP POWER MOSFETS BEAT BIPOLARS AT HIGH-CURREIUT SWITCHING iMMHi By W arren Schultz Motorola Inc. Power Products Division Reprinted by Permission of ELECTRONIC DESIGN, June 14, 1 9 8 4 . 1984, Hayden Publishing Co., Inc.
|
OCR Scan
|
PDF
|
AR133
MTE200N05
MC14050B
MC14528B
C27852
MJ10200
MC13528
C2785
high speed Zener Diode 200v
200A fet
MTE200N06
MR2525L equivalent
200a mosfet
MJ-102
|
diode C209
Abstract: IGBT C206 10OnH 20QA IRGNI200F06 302CL MOSFET ior 144 lc108
Text: International 1«R]Rectifier PD-9.976B IRGNI200F06 "CHOPPER" IGBT I N T - A - P A K _Fast Speed IGBT High Side Switch VŒ = 600V .Rugged Design .Simple gate-drive .Fast operation up to 10KHz hard switching, or 50KHz resonant .Switching-Loss Rating includes all "tail"
|
OCR Scan
|
PDF
|
IRGNI200F06
10KHz
50KHz
C-206
diode C209
IGBT C206
10OnH
20QA
IRGNI200F06
302CL
MOSFET ior 144
lc108
|
IRGKI200F06
Abstract: c186 diode
Text: International [k>rîRectifier PD-9.968C IRGKI200F06 Fast Speed IGBT "CHOPPER" IGBT INT-A-PAK Low Side Switch -O J V ce=600V • Rugged Design • Simple gate-drive • Fast operation up to 10KHz hard switching, or 50KHz resonant •Switching-Loss Rating includes all “tail“
|
OCR Scan
|
PDF
|
IRGKI200F06
10KHz
50KHz
C-187
IRGKI200F06
100nH
C-188
c186 diode
|
L200A
Abstract: No abstract text available
Text: International S Rectifier PD-9.976B IRGNI200F06 Fast Speed IGBT "CHOPPER" IGBT INT-A-PAK VŒ = 600V •Rugged Design •Simple gate-drive • Fast operation up to 10KHz hard switching, or 50KHz resonant •Switching-Loss Rating includes all "tail" losses lc = 200A
|
OCR Scan
|
PDF
|
10KHz
50KHz
IRGNI200F06
100nH
C-212
L200A
|
150N06
Abstract: No abstract text available
Text: Prelim inary Data Sheet OMD150N06FL OMD6OL6OFL OMD120N10FL QMD50F60FL H-BRIDGE, MULTI-CHIP MODULES IN AN INDUSTRIAL ISOLATED PACKAGE 60 To 6 0 0 Volt, 50 To 150 A m p M o d u l e s With Int ern al G a t e Drive. H - B r i d g e C o n f i g u r a t i o n FEATURES
|
OCR Scan
|
PDF
|
OMD150N06FL
OMD120N10FL
QMD50F60FL
120N10FL
60L60FL
50F60FL
150N06
|
