Untitled
Abstract: No abstract text available
Text: DIODE NON-ISOLATED TYPE MDF(R)20QA M D F(R )200A is a diode with flat mounting base which is designed for use in various rectifier applications. • If(av) = 200A, VrrM= 500V • Easy Construction with Anode (F) Type and Cathode (R) Type. • High reliability by glass passivation
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200A50
B-153
B-154
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Untitled
Abstract: No abstract text available
Text: PD - 9.790 International lüHRectffier IRGBC20UD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT Features V ces = 6 0 0 V • Switching-loss rating includes all "tail" losses • HEXFRED soft ultrafast diodes
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IRGBC20UD2
application16
TQ-220AB
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Untitled
Abstract: No abstract text available
Text: PD 9.1571 International IG R Rectifier IR G 4 R C 1 0 U D PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast CoPack IGBT • UltraFast: Optimized for medium operating frequencies 8-40 kHz in hard switching, >200
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O-252AA
140ns
4AS54S2
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IRGKI200F06
Abstract: IGBT FF 300 l200a
Text: International lü Rectifier PD-9.968C IRGKI200F06 Fast Speed IGBT "CH O PPER “ IGBT INT-A-PAK V CE = 600V • Rugged Design •Simple gate-drive • Fast operation up to 10KHz hard switching, or 50KHz resonant •Switching-Loss Rating includes all “tail"
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10KHz
50KHz
IRGKI200F06
C-188
IRGKI200F06
IGBT FF 300
l200a
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transistor C946
Abstract: C948 c948 transistor C946 C947 c 948 BR c945 transistor diode c946 transistor c951 c947 transistor
Text: International tor]Rectifier P D - 9.1114 IRGPC40KD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated UltraFast CoPack IGBT Features • • • • Ie Short circuit rated -1 Ops @ 125°C, V q E = 15V Switching-loss rating includes all "tail" losses
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IRGPC40KD2
C-951
O-247AC
C-952
transistor C946
C948
c948 transistor
C946
C947
c 948
BR c945 transistor
diode c946
transistor c951
c947 transistor
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GE rcrt
Abstract: ov8d AY 5 3500
Text: L A 7 b 7 U : features & runcuuus [V IF ] * PLL type video d etecto r fo r the high p ictu re & sound q u a lity * High gain V IF amp Pre-amp unnecessary * High speed ACC * B u ilt in APC tim e constant SW [S IF ] * Audio IN/OUT a t same time * Yideo/Audio sim u ltan eojs muting, or audio-only muting possible
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734KHz
GE rcrt
ov8d
AY 5 3500
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thyristor CR6AM
Abstract: CR6AM
Text: MITSUBISHI THYRISTOR CR6AM MEDIUM POW ER, G EN ERAL USE LEAD-MOUNTED, GLASS- PASSIVATION T Y P E D E S C R IP T IO N O U T L IN E D R A W IN G D im e n sio n : m m Mitsubishi type C R 6 A M -1 ~ 1 2 are glass-passivated junction type thyristors for use in low. power and high voltage control.
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20Qa-
10mA-
thyristor CR6AM
CR6AM
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Untitled
Abstract: No abstract text available
Text: PD-2.471 bitemational ^Rectifier HFA80NC40CSM Ultrafast, Soft Recovery Diode HEXFRED BASE COMMON CATHODE Features V r = 400V cJ • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters I , -H 1 V F = 1 .3 V Qrr * = 5 0 0 n C
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HFA80NC40CSM
Saalburgstrasse157
37066IR
Liguria49
0GEn55
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200a 300v mosfet
Abstract: No abstract text available
Text: bitemational Km Rectifier Provisional Data Sheet PD-9.1198 IRGTDN200K06 Low conduction loss IGBT "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK V CE = 600V lc = 200A • Rugged Design •Simple gate-drive •Switching-Loss Rating includes all "tail" losses •Short circuit rated
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IRGTDN200K06
C-460
GD2025D
200a 300v mosfet
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ULTRA fast rectifier diode 15A 200V anode common
Abstract: common anode 600v ULTRA fast rectifier diode 30A 200V anode common 200A1 HFA35HA60C 200V 30A TRANSISTOR
Text: International PD-2.378 Provisional Data Sheet [^Rectifier HFA35HA60C HEXFRED u l t r a f a s t, s o f t RECOVERY DIODE Major Ratings and Characteristics Features: trr per leg 60 ns — — — — — — — — Qrr (per leg) 180 nC Benefits; 6 A 1.7
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HFA35HA60C
00A/fis,
200AIfS,
TQ-204AA
ULTRA fast rectifier diode 15A 200V anode common
common anode 600v
ULTRA fast rectifier diode 30A 200V anode common
200A1
200V 30A TRANSISTOR
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Untitled
Abstract: No abstract text available
Text: NMT SERIES Triple O utput 3W DC-DC Converters w ith Shutdown features □ Triple Outputs -24V, -4 8 V & -72V TTL/CM OS Compatible O N /O FF Control Toroidal Magnetics Input/Output Isolation 1kVDC Power Sharing on Outputs n Internal SMD Construction n Industrial Temperature Range
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NMT0572SZ
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IT71
Abstract: WE VQE 24 E G-115 G-116 IRGMVC50U IRGMVC50UU G122
Text: International S Rectifier PD-9.825 IRGMVC50U Ultra Fast-Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ON-BOARD REVERSE DIODE • • • • • • Electrically Isolated Hermetically Sealed Simple Drive Requirements Latch-proof UltraFast operation > 10 kHz
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IRGMVC50U
20kHz
O-258AA
IROWC50U0
IRGMVC50UU
WI-S-19SM
O-258
IT71
WE VQE 24 E
G-115
G-116
IRGMVC50U
IRGMVC50UU
G122
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI TRANSISTOR MODULES ? QM200DY-24B { HIGH POWER SWITCHING USE I _ INSULATED TYPE f QM2000Y-24B Collector current. 200A Coltector-emitter voltage. 1200V • hFE DC current gain. 750
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QM200DY-24B
QM2000Y-24B
E80276
E80271
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Untitled
Abstract: No abstract text available
Text: PD-9.1145A kitemational kjr]Rectifier IRGPC50MD2 Short Circuit Rated Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features V c e s = 600V • Short circuit rated -10ps @125°C, VGE = 15V • Switching-loss rating includes ail "tail" losses
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IRGPC50MD2
-10ps
10kHz)
C-405
O-247AC
C-406
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Untitled
Abstract: No abstract text available
Text: INTERNATIONAL RECTIFIER ZOR 'T 73 DE'| 4Û55452 □□DLTll 1 Data Sheet No. PD-3.139 in t e r n a t io n a l r e c t if ie r S18CF & S18CFH SERIES 800-600 VOLTS RANGE STANDARD TURN-OFF TIME 12 jus 125 AMP RMS, CENTER AMPLIFYING GATE INVERTER TYPE STUD MOUNTED SCRs
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S18CF
S18CFH
S18CF
S18CFH
4ASS452
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Untitled
Abstract: No abstract text available
Text: PD-2.338 International iliRectifier HEXFRED Provisional Data Sheet HFA25PB60 Major Ratings and Characteristics Units Characteristics 600 V 'F AV 25 A trr (typ) 23 ns Qrr (typ) 112 nC 10 A di(rec)M/dt (typ) 250 AJa$ VF 1.7 V Vr vrrm IRRM 600V, 25A ULTRA FAST, SOFT RECOVERY DIODE
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HFA25PB60
HFA25PB60
D-6300
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Untitled
Abstract: No abstract text available
Text: u im 28MHz, 12V/|is, Single Supply TECHNOLOGY LT1213/LT1214 Dual and Quad Precision Op Amps F€ R TU R € S D € S C R IP T IO n • Slew Rate 12V/nsTyp ■ Gain-Bandwidth Product 28MHzTyp ■ Fast Settling to 0.01% 2V Step to 200 xV 500ns Typ 10V Step to 1mV
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28MHz,
LT1213/LT1214
28MHzTyp
500ns
200nA
200V/mVMin
10nV/VFizTyp
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ANSI 45 rectifier
Abstract: transistor f 3009 transistor BA RW transistor k30 hexfred hf*C HFA45HI60C international rectifier 2120 IR 2120
Text: International IOR Rectifier HEXFRED PD-2.380 Provisional Data Sheet HFA45HI60C ULTRA FAST, s o f t r e c o v e r y d iod e Features: Major Ratings and Characteristics Characteristics 600V, 45A — — — — — — — Ultrafast Recovery Ultra Soft Recovery
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HFA45HI60C
HFA45HC60CD
HFA45HC60CU
O-258
HFA4SHH20CD
HFA45HI120CU
O-259
ANSI 45 rectifier
transistor f 3009
transistor BA RW
transistor k30
hexfred hf*C
international rectifier 2120
IR 2120
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transistor c964
Abstract: E 5032 TI transistor D 5032 C970
Text: PD - 5.032 bitemational [kh*1Rectifier CPV362MK IGBT SIP MODULE Features Short Circuit Rated UltraFast IGBT • Short Circuit Rated • 10ps @ 125°C, Vge = 15V Fully isolated printed circuit board mount package • Switching-loss rating includes all ’tail” losses
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CPV362MK
360Vdc,
C-969
C-970
transistor c964
E 5032 TI
transistor D 5032
C970
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Untitled
Abstract: No abstract text available
Text: 2 THIS DRAWI NG IS UNPUBLISHED. R E L E A S E D FOR P U B L I C A T I O N BY TYCO E L E C T R O N I C S C O R P O R A T I O N . A L L C O P Y R I G H T 20 20 LOC 00 GP R 1G H T S R E S E RV E D. R EV 1S I O N S DIST P - S I G N A L S E C ON D A R Y LOCK PART NUMBER I 6 0 0 9 0 2 - I
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23JUN2009
150CT2009
ECR-09-022624
28SEP2009
I0MAY05
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PDF
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LS 2027 audio amp
Abstract: ECG transistor replacement guide book free 2sb337 TRANSISTOR REPLACEMENT GUIDE 980510 S9510 2sb508 C24850772 2N339 bc149c
Text: TABLE OF CONTENTS Introduction. Page 2 How to Use This Book. Page 2 Care and Handling of T ran sisto rs. Page 3
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200a 300v mosfet
Abstract: No abstract text available
Text: Provisional Dd.tsi Sh ôt PD*9.1198 1°R Rectifier IRGTDN200K06 "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK Low conduction loss IGBT VCE = 600V lc = 200A • Rugged Design •Simple gate-drive •Switching-Loss Rating includes all "tail“ losses •Short circuit rated
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IRGTDN200K06
C-460
200a 300v mosfet
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PDF
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SG800GXH24
Abstract: No abstract text available
Text: TO SHIBA SG800GXH24 TOSHIBA GATE TURN-OFF THYRISTOR <;r;ann ;YH7A Unit in mm INVERTER APPLICATION • • • • Repetitive Peak Off-State Voltage R.M.S On-State Current Peak Turn-Off Current Critical Rate of Rise of On-State Current Critical Rate of Rise of Off-State Voltage
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SG800GXH24
500mA
SG800GXH24
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30ct0045
Abstract: SAY115 TO-247AA 247AA 120N0045 Schottky Diode 40V 1A bridge 95s0 TO-247-AA 15OCMO 249m
Text: Forward voltage drop is a function of the Schottky's reverse voltage rating. The maximum voltage rating of today’s Schottky rectifiers is about 150V. At this voltage, the Schottky’s forward voltage drop is lower than that of a fast recovery epitaxial PN junction rectifier by 150 to
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200mV.
30ct0045
SAY115
TO-247AA
247AA
120N0045
Schottky Diode 40V 1A bridge
95s0
TO-247-AA
15OCMO
249m
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